XN05601G [PANASONIC]
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon, ROHS COMPLIANT, MINI6-G3, 6 PIN;
| 型号： | XN05601G |
| 厂家： | 
PANASONIC |
| 描述： | Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon, ROHS COMPLIANT, MINI6-G3, 6 PIN 放大器 光电二极管 晶体管 |
| 文件： | 总7页 (文件大小：268K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
This product complies with the RoHS Directive (EU 2002/95/EC).
Composite Transistors
XN05601G
Silicon PNP epitaxial planar type (Tr1)
Silicon NPN epitaxial planar type (Tr2)
For general amplification
■ Package
■ Features
Code
Mini6-3
Pin
• Two elements incorporated into one package
• Reduction of the mounting area and assembly cost by onhalf
•
: ColTr1) 4: Base (Tr2)
■ Basic Part Number
• 2SB0709A + 2SD0601A
Emitter (Tr2)
3: Colector (Tr2) 6: Emitter (Tr1)
5: Base (Tr1)
Marking Symbol: 4N
■ Internal Connection
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Ratng
Unit
Tr1
Collector-base volta
(Emitter open)
VCBO
−60
V
(B2)
4
(B1)
5
(E1)
6
Collector-emitter vltage
(Base opn)
VCEO
VO
−50
−7
V
V
Emitter-bse voltag
(Colleor opn)
Tr2
Tr1
Coltor crrent
ICP
−100
−200
60
mA
mA
V
Pllector curren
Tr
Coctor-base voltage
Emittr open
VCBO
3
2
1
(C2)
(E2)
(C1)
Collector-mitter voltag
en)
VCEO
VEBO
50
7
V
V
voltge
en)
Colurrent
IC
ICP
PT
100
200
mA
mA
mW
°C
Peak collector current
Overall Total power dissipation
Junction temperature
300
Tj
150
Storage temperature
Tstg
−55 to +150
°C
Publication date: March 2009
SJJ00498AED
1
This product complies with the RoHS Directive (EU 2002/95/EC).
XN05601G
■ Electrical Characteristics Ta = 25°C 3°C
• Tr1
Parameter
Symbol
VCBO
VCEO
VEBO
ICBO
Conditions
IC = −10 µA, IE = 0
Min
−60
−50
−7
Typ
Max
Unit
V
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Forward current transfer ratio
IC = −2 mA, IB = 0
V
IE = −10 µA, IC = 0
VCB = −20 V, IE = 0
VCE = −10 V, IB = 0
VCE = −10 V, IC = −A
V
− 0.1
−100
460
µA
µA
ICEO
hFE
160
Collector-emitter saturation voltage
Transition frequency
VCE(sat) IC = −100 m, IB = −10 mA
− 0.3 − 0.5
V
fT
VCB = −10 VIE = 1 mA, f = 200 M
VCB = −10 , IE = 0, f = 1 MHz
80
MHz
pF
Collector output capacitance
Cob
2.7
(Common base, input open circuited)
Note) Measuring methods are based on JAPANESE INDSTRIAL STANDARD C 703measuring methods for transistors.
• Tr2
Parameter
Symbol
VBO
VCEO
VEBO
ICBO
Coditions
IC = 10 µAE = 0
Min
60
50
7
Typ
Max
Unit
V
Collector-base voltage (Emitter
Collector-emitter voltag(Base )
Emitter-base voltage (Collecor open)
Collector-base cutoff urrent Emittepen)
Collector-emitter cutofcurrent (Bse open)
Forward current trnsfer ratio
IC = 2 m, IB = 0
V
IE = 1µA, IC = 0
VCB = 20 V, IE = 0
VCE = 10 V, IB = 0
VE = 10 V, IC = 2 mA
V
0.1
100
460
.3
µA
µA
ICEO
160
Collectr-emisatuation voltage
rasition cy
IC = 100 mA, IB = 10 mA
0.1
150
3.5
V
fT
VCB = 10 V, IE = −2 mA, f = 200 MHz
VCB = 10 V, IE = 0, f = 1 MHz
MHz
pF
Colectr output capacitance
Cob
(Common base, iput on circied)
Note) Measurimethos are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Common charcteristics chart
PT Ta
500
400
300
200
100
0
0
40
80
120
160
(
)
Ambient temperature Ta °C
SJJ00498AED
3
This product complies with the RoHS Directive (EU 2002/95/EC).
XN05601G
Characteristics charts of Tr1
IC VCE
IC IB
IB VBE
−400
−350
−300
−250
−200
−150
−60
−50
−40
−30
−20
−10
0
−60
−50
−40
−30
−20
−10
0
VCE = –5 V
Ta = 25°C
Ta = 25°C
VCE = −5 V
Ta = 25°C
IB = −300 µA
−250 µA
−200 µA
−150 µA
−100 µA
−50 µA
0
0
−0.4
−0.8
−1.2
−1.6
0
−100
−200
−300
−40
0
−4
−8
−12
−16
( )
Base-emitter voltage VBE V
(
)
(
V
)
ase current IB µA
Collector-emitter voltage VCE
IC VBE
VCE(at) IC
hFE IC
600
500
400
300
200
10
0
−10
−1
−240
−200
−160
−120
−80
−0
0
IC IB = 10
VCE = −10 V
VCE
25°C
−25°
Ta = 75°C
Ta = 75°C
25°C
Ta = 75°C
25°C
−25°C
1
−10−2
−10−
−25°C
−102
−103
−1
−10
−102
−103
−
−10
0
8
−2
−2.0
(
)
)
Collector current IC mA
(
V
)
Collector current IC mA
tage BE
IE
Cob VCB
NF IE
8
160
140
120
100
80
6
VCB = −10 V
Ta = 25°C
f = MHz
IE = 0
VCB = −5 V
f = 1 kHz
Rg = 2 kΩ
Ta = 25°C
7
6
5
4
3
2
1
0
Ta = 25°C
5
4
3
2
1
60
40
20
0
0
−1
−10
−102
10−1
1
10
Emitter current IE (mA)
102
10−2
10−1
Emitter current IE (mA)
1
10
(
V
)
Collector-base voltage VCB
SJJ00498AED
3
This product complies with the RoHS Directive (EU 2002/95/EC).
XN05601G
NF IE
h parameter IE
h parameter VCE
20
VCB = −5 V
VCE = −5 V
f = 270 Hz
IE = 2 mA
Rg = 50 kΩ
18
f = 270 Hz
Ta = 25°C
Ta = 25°C
Ta = 25°C
hfe
hfe
16
14
12
102
10
1
102
10
hoe (µS)
f = 100 Hz
10
8
hoe (µS)
1 kHz
10 kHz
6
hie (kΩ)
hre (× 10−4
)
4
hie (kΩ)
2
hre × 10−
0
10−1
1
−1
−10
10−1
1
Emitter current IE (mA)
10
Emter current IE (mA)
( )
V
Collector-emitter voltage VCE
Characteristics charts of Tr2
IC VCE
I IB
IB VBE
60
1200
1000
800
600
400
200
240
200
16
80
Ta
B = 16A
VCE = 10 V
Ta = 25°C
VC10 V
Ta = °C
50
40
30
1
0
1µ
120 µA
100 µA
80 µA
6µA
40 µ
40
20 µ
0
0
6
8
10
0
0.2
0.4
0.6
0.8
1.0
0
200
400
600
800
)
1000
(
V
)
Cltage VCE
(
(
V
)
Base current IB µA
Base-emitter voltage VBE
IC VBE
VCE(sat) IC
hFE IC
102
10
600
500
400
300
200
100
0
240
200
160
120
80
IC / IB = 10
VCE = 10 V
VCE = 10 V
Ta = 75°C
25°C
25°C
1
−25°C
Ta = 75°C
−25°C
25°C
10−1
Ta = 75°C
−25°C
40
10−2
10−1
0
10−1
1
10
102
1
10
102
0
0.4
0.8
1.2
1.6
2.0
(
)
Collector current IC mA
(
)
(
V
)
Collector current IC mA
Base-emitter voltage VBE
SJJ00498AED
5
This product complies with the RoHS Directive (EU 2002/95/EC).
XN05601G
fT IE
NV IC
240
300
240
180
120
60
VCB = 10 V
Ta = 25°C
VCE = 10 V
GV = 80 dB
Function = FLAT
Ta = 25°C
200
160
120
80
Rg = 100 kΩ
Ω
4Ω
40
0
10
0
−10−1
−1
−10
−102
1
10
(
)
Collctor current IC µA
Emitter current IE (mA)
SJJ00498AED
5
This product complies with the RoHS Directive (EU 2002/95/EC).
XN05601G
Mini6-G3
Unit: mm
2.90 +0.20
−0.05
13 +0.05
−0.02
1.9 0.1
(0.95)
(0.95)
6
4
5
3
2
0.30 +0.10
0.50 +10
−0.05
−
05
8
SJJ00498AED
6
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
regulations of the exporting country, especially, those with regard to security export control, must be observed.
(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples
of the products. No license is granted in and to any intellectual property right or other right owned by Panasonic Corporation or any
other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any
other company which may arise as a result of the use of technical information described in this book.
(3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office
equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
– Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support
systems and safety devices) in which exceptional quality and reliability requied, or if the failure or malfunction of the prod-
ucts may directly jeopardize life or harm the human body.
– Any applications other than the standard applications intended.
(4) The products and product specifications described in this book are subjet to change wit notice for modification and/or im-
provement. At the final stage of your design, purchasingr use of the roducts, therfor the most up-to-date Product
Standards in advance to make sure that the latest specifictions stisfy your requirements.
(5) When designing your equipment, comply with he ange f absolute maximing nd the guaranteed operating conditions
(operating power supply voltage and operating nvirent etc.). Especiall, plee be ceful not to exceed the range of absolute
maximum rating on the transient state, such as powpower-off and modeswitching. Otherwise, we will not be liable for any
defect which may arise later in your equpmen
Even when the products are used withthe guaanteed values, kinto he cosideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the sytems such as redundant design, arresting the spread of fire
or preventing glitch are recommin ordto prevent physicinjury, fre, social damaes, for example, by using the products.
(6) Comply with the instructios for se in rder to prevent breakdwn and characteristics change due to external factors (ESD, EOS,
thermal stress and mechanicastress) at the time of andlig, mounting or at customer's process. When using products for which
damp-proof packinis reqired, stisfy the condtions, sch as shelf life and the elapsed time since first opening the packages.
(7) This book may e not eprinted or reprodhethr wholly or partially, without the prior written permission of our company.
2008080
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