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IS9-1845ASRH/PROTO [RENESAS]

1A SWITCHING CONTROLLER, 500kHz SWITCHING FREQ-MAX, CDFP18, CERAMIC, DFP-18;
IS9-1845ASRH/PROTO
型号： IS9-1845ASRH/PROTO
厂家： RENESAS TECHNOLOGY CORP    RENESAS TECHNOLOGY CORP
描述：

1A SWITCHING CONTROLLER, 500kHz SWITCHING FREQ-MAX, CDFP18, CERAMIC, DFP-18

CD 信息通信管理 开关
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Single Event Radiation Hardened High Speed, Current  
Mode PWM  
IS-1845ASRH, IS-1845ASEH  
Features  
• Electrically Screened to DSCC SMD # 5962-01509  
The IS-1845ASRH, IS-1845ASEH are  
designed to be used in switching  
power supplies operating in current-  
mode. The rising edge of the on-chip  
• QML Qualified per MIL-PRF-38535 Requirements  
TM  
• Radiation Environment  
- High Dose Rate. . . . . . . . . . . . . . . . . . . . .300 krad(SI) (Max)  
- Low Dose Rate . . . . . . . . . . . . . . . . . . . . . .50 krad(SI) (Max)  
- SEL Immune . . . . . . . . . . . . . . . . . . . . Dielectrically Isolated  
oscillator turns on the output. Turn-off  
is controlled by the current sense comparator and occurs when  
the sensed current reaches a peak controlled by the error  
amplifier.  
2
- SEU Immune. . . . . . . . . . . . . . . . . . . . . . . . 35MeV/mg/cm  
2
-6  
2
Constructed with Intersil’s Rad Hard Silicon Gate (RSG)  
dielectrically isolated BiCMOS process, these devices are  
immune to single event latch-up and have been specifically  
designed to provide a high level of immunity to single event  
transients. All specified parameters are guaranteed and tested  
for 300krad(Si) total dose performance at a high dose rate and  
50krad(Si) total dose at a low dose rate.  
- SEU Cross-Section at 89MeV/mg/cm . . . . . . 5 x 10 cm  
• Low Start-up Current . . . . . . . . . . . . . . . . . . . . . . . 100µA (Typ)  
• Fast Propagation Delay . . . . . . . . . . . . . . . . . . . . . . . 80ns (Typ)  
• Supply Voltage Range . . . . . . . . . . . . . . . . . . . . . . . 12V to 20V  
• High Output Drive. . . . . . . . . . . . . . . . . . . . . . . . 1A (Peak, Typ)  
• Undervoltage Lockout . . . . . 8.8V Start (Typ), 8.2V Stop (Typ)  
Detailed Electrical Specifications for these devices are  
contained in the SMD 5962-01509. A “hot-link” is also  
provided on our website for downloading the SMD.  
Applications  
• Current-Mode Switching Power Supplies  
• Control of High Current FET Drivers  
• Motor Speed and Direction Control  
Pin Configurations  
IS7-1845ASRH, IS7-1845ASEH  
(8 LD CDIP2-T8 SBDIP)  
TOP VIEW  
IS9-1845ASRH, IS9-1845ASEH  
(18 LD FLATPACK)  
TOP VIEW  
NC  
COMP  
VFB  
1
2
3
4
5
6
7
8
9
NC  
18  
17  
COMP  
VFB  
1
2
3
4
8
7
6
5
VREF  
VCC  
OUT  
GND  
VREF  
VCC  
VC  
16  
15  
14  
13  
12  
11  
10  
ISENSE  
RTCT  
NC  
NC  
OUT  
NC  
NC  
ISENSE  
RTCT  
NC  
GND  
OSCGND  
NC  
NOTES:  
1. Grounding the COMP pin does not inhibit the output. The output may be inhibited by applying >1.2V to the ISENSE pin.  
2. This part should be operated with C = 3.3nF and R = 10k timing components only.  
t
t
July 13, 2012  
FN9001.5  
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.  
1-888-INTERSIL or 1-888-468-3774 |Copyright Intersil Americas Inc. 2003, 2008, 2012. All Rights Reserved  
Intersil (and design) is a trademark owned by Intersil Corporation or one of its subsidiaries.  
All other trademarks mentioned are the property of their respective owners.  
1
IS-1845ASRH, IS-1845ASEH  
Ordering Information  
INTERNAL  
MKT. NUMBER  
TEMP. RANGE  
(°C)  
PKG.  
DWG. #  
ORDERING NUMBER  
PACKAGE  
5962F0150901V9A  
5962F0150902V9A  
IS0-1845ASRH/Sample  
5962F0150901VPC  
5962F0150902VPC  
5962F0150901VPC  
5962F0150901QPC  
5962F0150901QPC  
5962F0150901VXC  
5962F0150902VXC  
5962F0150901VXC  
5962F0150901QXC  
IS7-1845ASRH/Proto  
IS9-1845ASRH/Proto  
IS0-1845ASRH-Q  
IS0-1845ASEH-Q  
-50 to +125  
-50 to +125  
-50 to +125  
-50 to +125  
-50 to +125  
-50 to +125  
-50 to +125  
-50 to +125  
-50 to +125  
-50 to +125  
-50 to +125  
-50 to +125  
-50 to +125  
-50 to +125  
IS0-1845ASRH/Sample  
IS7-1845ASRH-Q  
8 Ld SBDIP  
D8.3  
IS7-1845ASEH-Q  
8 Ld SBDIP  
D8.3  
IS7-1845ASRH-QS9000  
IS7-1845ASRH-8  
8 Ld SBDIP  
D8.3  
8 Ld SBDIP  
D8.3  
IS7-1845ASRH-8S9000  
IS9-1845ASRH-Q  
8 Ld SBDIP  
D8.3  
18 Ld Flatpack  
18 Ld Flatpack  
18 Ld Flatpack  
18 Ld Flatpack  
8 Ld SBDIP  
K18.B  
K18.B  
K18.B  
K18.B  
D8.3  
IS9-1845ASEH-Q  
IS9-1845ASRH-QS9000  
IS9-1845ASRH-8  
IS7-1845ASRH/Proto  
IS9-1845ASRH/Proto  
18 Ld Flatpack  
K18.3  
Typical Performance Curves  
10k  
100  
80  
60  
40  
20  
D
MAX  
C470pF  
C1000pF  
1k  
C2200pF  
C4700pF  
100  
10  
1
0
0.1  
1
10  
100  
1
10  
100  
R TIMING RESISTANCE (kΩ)  
R TIMING RESISTANCE (kΩ)  
t
t
FIGURE 1. OSCILLATOR FREQUENCY vs R and C  
t
FIGURE 2. MAXIMUM DUTY CYCLE vs R  
t
t
FN9001.5  
July 13, 2012  
2
IS-1845ASRH, IS-1845ASEH  
Substrate  
Die Characteristics  
DIE DIMENSIONS  
Radiation Hardened Silicon Gate,  
Dielectric Isolation  
3090µm x 4080µm (121.6 mils x 159.0 mils)  
Thickness: 483µm ± 25.4µm (19 mils ± 1 mil)  
Backside Finish  
Silicon  
INTERFACE MATERIALS  
Glassivation  
ASSEMBLY RELATED INFORMATION  
Substrate Potential  
Type: Phosphorus Silicon Glass (PSG)  
Thickness: 8.0kA ± 1.0kA  
Unbiased (DI)  
Top Metallization  
ADDITIONAL INFORMATION  
Worst Case Current Density  
Type: AlSiCu  
Thickness: 16.0kA ± 2kA  
5
2
<2.0 x 10 A/cm  
Transistor Count  
582  
Metallization Mask Layout  
IS-1845ASRH  
ISENSE  
VFB  
COMP  
RTCT  
OSCGND  
VREF  
GND  
GND  
OUT  
VC  
VCC  
NOTES:  
3. Both the GND pads must be bonded to ground.  
4. The OUT double-sized bond pad must be double bonded for current sharing purposes.  
5. The OSCGND double-sized bond pad must be double bonded to ground for current sharing purposes.  
For additional products, see www.intersil.com/product_tree  
Intersil products are manufactured, assembled and tested utilizing ISO9000 quality systems as noted  
in the quality certifications found at www.intersil.com/design/quality  
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time  
without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be  
accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third  
parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.  
For information regarding Intersil Corporation and its products, see www.intersil.com  
FN9001.5  
July 13, 2012  
3

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