RTQ2510-QA [RICHTEK]
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| 型号： | RTQ2510-QA |
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RICHTEK TECHNOLOGY CORPORATION |
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®
RTQ2510-QA
1A, Low Noise, Ultra High PSRR, Low-Dropout Linear Regulator
General Description
Features
AEC-Q100 Grade 1 Qualified
The RTQ2510 is a high performance positive low dropout
(LDO) regulator designed for applications requiring very
low dropout voltage and ultra high Power Supply Ripple
Rejection (PSRR) at up to 1A. The input voltage range is
from 2.2V to 6V and the output voltage is programmable
as low as 0.8V. A P-MOSFET switch provides excellent
transient response with just a 4.7μF ceramic output
capacitor. The external enable control effectively reduces
power dissipation while shutdown and further output noise
immunity is achieved through bypass capacitor onNR pin.
Additionally, the RTQ2510 features a precise 3% output
regulation over line, load, and temperature variations. The
device is available in the VDFN-8L 3x3 package and is
specified from −40°C to 125°C.
Very Low Dropout : 170mV Typical at 1A
Ultra High PSRR : 63dB @ 1kHz, 38dB @ 1MHz
Input Voltage Range : 2.2V to 6V
Adjustable Output Voltage : 0.8V to 5.5V
−40°C to 125°C Operating Junction Temperature
Range
Excellent Noise Immunity
Fast Response Over Load and Line Transient
Stable with a 4.7μF Output Ceramic Capacitor
Accurate Output Voltage 3% Over Load, Line,
Process, and Temperature Variations
Enable Control
Over-Current Protection
Over-Temperature Protection
Ordering Information
Applications
-QA
RTQ2510
Telecom/Networking Cards
Motherboards/Peripheral Cards
IndustrialApplications
Wireless Infrastructures
Set-Top Boxes
Pin 1 Orientation***
(2) : Quadrant 2, Follow EIA-481-D
Grade
QA : AEC-Q100 Qualified and
Screened by High Temperature
Medical Equipments
Package Type
Notebook Computers
Battery Powered Systems
QV : VDFN-8L 3x3 (V-Type)
Lead Plating System
G : Green (Halogen Free and Pb Free)
Note :
Pin Configuration
***Empty means Pin1 orientation is Quadrant 1
Richtek products are :
(TOP VIEW)
RoHS compliant and compatible with the current require-
ments of IPC/JEDEC J-STD-020.
1
2
3
4
8
7
6
5
VOUT
VOUT
FB
VIN
VIN
NR
EN
Suitable for use in SnPb or Pb-free soldering processes.
9
GND
VDFN-8L 3x3
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RTQ2510-QA
Marking Information
MP= : Product Code
YMDNN : Date Code
MP=YM
DNN
Functional Pin Description
Pin No.
Pin Name
Pin Function
1, 2
VOUT
Output of the regulator. Decouple this pin to GND with at least 4.7F for stability.
Feedback voltage input. This pin is used to set the desired output voltage via an
external resistive divider. The feedback reference voltage is 0.8V typically.
3
FB
System ground. The exposed pad must be soldered to a large PCB and
connected to GND for maximum power dissipation.
4, 9 (Exposed Pad) GND
Enable control input. Connecting this pin to logic high enables the regulator or
driving this pin low puts it into shutdown mode. EN can be connected to IN if not
used. (EN pin is not allowed to be left floating.)
5
EN
Noise reduction input. Decouple this pin to GND with an external capacitor can
not only reduce output noise to very low levels but also slow down the VOUT rise
like a soft-start behavior.
6
NR
Supply input. A minimum of 1F ceramic capacitor should be placed as close as
possible to this pin for better noise rejection.
7, 8
VIN
Functional Block Diagram
VOUT
VIN
Thermal
Protection
UVLO
Current
Limit
Control Logic
EN
-
FB
Quick Start-Up
Bandgap
NR
35k
189k
GND
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Operation
The RTQ2510 is a low noise, high PSRR LDO which
supports very low dropout operation. The operating input
range from 2.2V to 6V and the output voltage is
programmable as low to 0.8V and the output current can
be up to 1A. The internal compensation network is well
designed to achieve fast transient response with good
stability.
very long if the CNR is not fully charged during 2ms and
opens the quick-start switch, the CNR will be charged
through higher resistance 224kΩ and takes much longer
time to finish the start up process.
Enable and Shutdown Operation
The RTQ2510 goes into sleep mode when the EN pin is in
a logic low condition. In this condition, the pass transistor,
error amplifier, and bandgap are all turned off, reducing the
supply current to only 2μA (max.). If the shutdown mode
is not required, the EN pin can be directly tied to VIN pin
to keep the LDO on.
In steady-state operation, the feedback voltage is
regulated to the reference voltage by the internal regulator.
When the feedback voltage signal is less than the
reference, the output current passes through the power
MOSFET will be increased. The extra amount of the
current is sent to the output until the voltage level of FB
pin returns to the reference.
Current Limit
The RTQ2510 continuously monitors the output current
to protect the pass transistor against abnormal operations.
When an overload or short circuit is encountered, the
current limit circuitry controls the pass transistor's gate
voltage to limit the output within the predefined range. By
reason of the build-in body diode, the pass transistor
conducts current when the output voltage exceeds input
voltage. Since the current is not limited, external current
protection should be added if device may work at reverse
voltage state.
On the other hand, if the feedback voltage is higher than
the reference, the power MOSFET current is decreased.
The excess charge at the output can be released by the
loading current.
Start-Up
The RTQ2510 has a quick-start circuit to charge the noise
reduction capacitor (CNR). The switch of the quick-start
circuit is closed at start up.
To reduce the noise from bandgap, there is a low-pass
(RC) filter consist of the CNR and the resistance which is
connected with bandgap, as Functional Block Diagrams
present.
Over-Temperature Protection (OTP)
The RTQ2510 has an over-temperature protection. When
the device triggers the OTP, the device shuts down until
the temperature back to normal state.
At the start-up, the quick-start switch is closed, with only
35kΩ resistance between bandgap andNR pin. The quick-
start switch opens approximate 2ms after the device is
enabled, the resistance betweenNR and bandgap is about
224kΩ to form a very good low pass filter and with great
noise reduction performance.
Under Voltage Lock-Out (UVLO)
The RTQ2510 utilizes an undervoltage lock-out circuit to
keep the output shut off until the internal circuitry is
operating properly. The UVLO circuit has a de-glitch feature
so that it typically ignores undershoot transients on the
input if they are less than 30μs duration.
The 35kΩ resistance is used to slow down the reference
voltage ramp to avoid inrush current at chip start-up, and
the start-up time can be calculated as :
tSS (sec) = 160000 x CNR (F)
(1)
It is recommend the CNR value larger than 0.01μF to reduce
noise, and low leakage ceramic capacitors are suitable.
However, with too large CNR will extend the start-up time
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RTQ2510-QA
Absolute Maximum Ratings (Note 1)
All Pins ---------------------------------------------------------------------------------------------------------------------- −0.3V to 7V
Power Dissipation, PD @ TA = 25°C
VDFN-8L 3x3 --------------------------------------------------------------------------------------------------------------- 3.22W
Package Thermal Resistance (Note 2)
VDFN-8L 3x3, θJA ---------------------------------------------------------------------------------------------------------- 31°C/W
VDFN-8L 3x3, θJC --------------------------------------------------------------------------------------------------------- 8°C/W
Lead Temperature (Soldering, 10 sec.)------------------------------------------------------------------------------- 260°C
Junction Temperature ----------------------------------------------------------------------------------------------------- 150°C
Storage Temperature Range -------------------------------------------------------------------------------------------- −65°C to 150°C
ESD Susceptibility (Note 3)
HBM (Human Body Model)---------------------------------------------------------------------------------------------- 2kV
Recommended Operating Conditions (Note 4)
Supply Voltage, VIN ------------------------------------------------------------------------------------------------------ 2.2V to 6V
Junction Temperature Range-------------------------------------------------------------------------------------------- −40°C to 125°C
Electrical Characteristics
(VIN = VOUT + 0.5V or 2.2V, VOUT = 0.8V and 5.5V, IOUT = 1mA, VEN = 2.2V, CNR = 10nF, COUT = 4.7μF, TJ = −40°C to 125°C,
unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Supply Voltage
Input Operating Voltage VIN
Under-Voltage Lockout
Threshold
2.2
--
2
6
V
VUVLO
ROUT = 1k
1.86
2.1
Under-Voltage Lockout
Threshold Hysteresis
VUVLO
ROUT = 1k
--
--
200
0.2
--
2
mV
VEN 0.4V, VIN 2.2V, ROUT = 1k,
0°C TJ 85°C
Shutdown Current
ISHDN
A
VEN 0.4V, VIN 2.2V, ROUT = 1k,
40°C TJ 125°C
--
--
0.2
5
Quiescent Current
Output Voltage
IQ
190
350
A
Output Supply Voltage
0.8
--
--
5.5
+2
V
VOUT + 0.5V VIN 6V, VIN 2.5V,
100mA IOUT 500mA,
0°C TJ 85°C
2
VOUT
Output Supply Voltage
%
Accuracy
(Note 5)
VOUT + 0.5V VIN 6V, VIN 2.2V,
100mA IOUT 1A
3
±0.3
+3
VOUT + 0.5V VIN 6V, VIN 2.2V,
IOUT = 100mA
Line Regulation
Load Regulation
VOUT/VIN
--
--
0.2
0.3
--
--
%
%
VOUT/IOUT 100mA IOUT 1A
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Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Enable Voltage
2.2V VIN 6V,
OUT = 1k
VIH
VEN rising
1.2
--
--
Enable Threshold
Voltage
R
V
VIL
IIH
VEN falling, ROUT = 1k
VIN = 6V, VEN = 6V
--
--
--
--
0.4
1
Enable Input Current
0.02
0.02
A
A
Feedback Input Current IFB
VIN = 5.5V, VFB = 0.8V
1
Current Limit
Output Current Limit
ILIM
VIN = 3.3V, VOUT = 0.85 x VOUT
1.1
1.4
2
A
Power-Up Time
VOUT = 3.3V,
C
NR = 1nF
--
--
0.16
1.6
--
--
Power-Up Time
ROUT = 3.3k,
OUT = 4.7F
ms
CNR = 10nF
C
Dropout Voltage
VIN 2.2V,
--
--
--
--
--
--
160
210
370
I
OUT = 500mA
VOUT + 0.5V VIN 6V, VIN 2.5V,
FB = 0V OUT = 750mA
VIN 2.5V,
OUT = 1A
Dropout Voltage
VDROP
mV
V
I
I
Power Supply Ripple Rejection and Noise
f = 100Hz
f = 1kHz
f = 10kHz
f = 1MHz
--
--
--
--
48
63
63
38
--
--
--
--
VIN = 4.3V, VOUT = 3.3V,
OUT = 750mA
(Note 6)
Power Supply Ripple
Rejection
PSRR
I
dB
15.6 x
VOUT
C
NR = 1nF
--
--
--
--
--
--
BW = 100Hz to 100kHz,
VIN = 4.3V, VOUT = 3.3V,
15.6 x
VOUT
Output Noise Voltage
CNR = 10nF
VRMS
I
OUT = 100mA
(Note 6)
15.1 x
VOUT
CNR = 0.1F
Over-Temperature Protection
Thermal Shutdown
TSD
(Note 6)
(Note 6)
--
--
160
140
--
--
°C
Thermal Shutdown
Recovery
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RTQ2510-QA
Note 1. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.
These are stress ratings only, and functional operation of the device at these or any other conditions beyond those
indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating
conditions may affect device reliability.
Note 2. θJA is measured under natural convection (still air) at TA = 25°C with the component mounted on a high effective-
thermal-conductivity four-layer test board on a JEDEC 51-7 thermal measurement standard. θJC is measured at the
exposed pad of the package.
Note 3. Devices are ESD sensitive. Handling precaution is recommended.
Note 4. The device is not guaranteed to function outside its operating conditions.
Note 5. The spec. doesn't cover the tolerances from external resistors, and which is not tested at condition of VOUT = 0.8V, 4.5V
≤ VIN ≤ 6V, and 750mA ≤ IOUT ≤ 1A since the power dissipation of the device is totally higher than the maximum rating
of the package to lead a thermal shutdown issue.
Note 6. Guarantee by design.
Typical Application Circuit
RTQ2510
7, 8
V
1, 2
3
IN
VIN
VOUT
V
OUT
2.2V to 6V
C
IN
C
4.7µF
OUT
R1
R2
1µF
5
6
FB
Enable
EN
NR
C
NR
GND
4
10nF
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Typical Operating Characteristics
UVLO vs. Temperature
Reference Voltage vs. Temperature
2.2
2.1
2.0
1.9
1.8
1.7
1.6
1.5
0.810
Logic-High
Logic-Low
0.805
VIN = 2.2V
0.800
VIN = 3.3V
VIN = 4.3V
VIN = 5.5V
VIN = 6V
0.795
0.790
VOUT = 0.8V, VEN = 2.2V
IOUT = 1mA
75 100 125
-50
-25
0
25
50
75
100
125
-50
-25
0
25
50
Temperature (°C)
Temperature (°C)
Shutdown Current vs. Temperature
Dropout Voltage vs. Input Voltage
2.5
2.0
1.5
1.0
0.5
0.0
200
150
100
50
VEN = 0.4V
0°C
25°C
−40°C
85°C
125°C
VIN = 2.2V
VIN = 3.3V
V
V
IN = 4.3V
IN = 5V
VIN = 5.5V
IN = 6V
V
IOUT = 1000mA
5 6
0
-50
-25
0
25
50
75
100
125
2
3
4
Temperature (°C)
Input Voltage (V)
Dropout Voltage vs. Output Current
PSRR vs. Frequency
200
150
100
50
90
80
70
60
50
40
30
20
10
0
0°C
−40°C
25°C
85°C
125°C
IOUT = 10mA
IOUT = 100mA
IOUT = 750mA
IOUT = 1000mA
No CIN, VIN = 4.3V,
COUT = 4.7μF, VOUT = 3.3V
VIN = 2.5V
800 1000
0
0
200
400
600
10
100
1k
10k 100k 1M 10M
Output Current (mA)
Frequency (Hz)
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RTQ2510-QA
Output Spectral Noise Density
Load Transient Response
100.00
10.00
1.00
RMS Noise (100Hz to 100kHz)
69.72μVRMS (IOUT = 10mA),
59.01μVRMS (IOUT = 100mA),
56.11μVRMS (IOUT = 750mA)
VIN = 4.3V, VOUT = 3.3V,
OUT = 0.1A to 1A (1A/μs, only shows the
transient component)
I
VOUT = 3.3V, VIN = 3.8V,
VOUT
(50mV/Div)
COUT = 4.7μF, CNR = 0.01μF
IOUT = 10mA
I
I
OUT = 100mA
OUT = 750mA
0.10
IOUT
(500mA/Div)
0.01
10
100
1000
10000
100000
Time (50μs/Div)
Frequency (Hz)
Line Transient Response
Power On from EN
VEN
(2V/Div)
VOUT
(5mV/Div)
VOUT
(1V/Div)
IOUT
(500mA/Div)
VIN
(1V/Div)
VIN = 3.8V to 4.8V, VOUT = 3.3V,
= 0.1A
VIN = 4.3V, VOUT = 3.3V
IOUT
Time (50μs/Div)
Time (500μs/Div)
Start-Up Time vs. Noise Reduction Capacitance
1000
Power Off from EN
VEN
100
10
1
(2V/Div)
VOUT
(1V/Div)
IOUT
(500mA/Div)
RLOAD = 1kΩ
VIN = 4.3V, VOUT = 3.3V
0.1
1
10
100
1000
Time (50μs/Div)
CNR (nF)
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Application Information
The RTQ2510 is a low voltage, low dropout linear regulator
with input voltage from 2.2V to 6V and a fixed output voltage
from 0.8V to 5.5V.
current limit circuitry controls the pass transistor's gate
voltage to limit the output within the predefined range. By
reason of the build-in body diode, the pass transistor
conducts current when the output voltage exceeds input
voltage. Since the current is not limited, external current
protection should be added if device may work at reverse
voltage state.
Dropout Voltage
The dropout voltage refers to the voltage difference between
the VINand VOUT pins while operating at specific output
current. The dropout voltage VDO also can be expressed
as the voltage drop on the pass-FET at specific output
current(IRATED) while the pass-FET is fully operating at
ohmic region and the pass-FET can be characterized as
an resistance RDS(ON). Thus the dropout voltage can be
defined as (VDO = VVIN − VVOUT = RDS(ON) x IRATED).
CIN and COUT Selection
Like any low dropout regulator, the external capacitors of
the RTQ2510 must be carefully selected for regulator
stability and performance. Using a capacitor of at least
4.7μF is suitable. The input capacitor must be located at
a distance of no more than 0.5 inch from the input pin of
the chip. Any good quality ceramic capacitor can be used.
However, a capacitor with larger value and lower ESR
(Equivalent Series Resistance) is recommended since it
will provide better PSRR and line transient response.
For normal operation, the suggested LDO operating range
is (VVIN > VVOUT + VDO) for good transient response and
PSRR ability. Vice versa, while operating at the ohmic
region will degrade these performance severely.
Output Voltage Setting
The RTQ2510 is designed specifically to work with low
ESR ceramic output capacitor for space saving and
performance consideration. Using a ceramic capacitor with
capacitance of at least 4.7μF on the RTQ2510 output
ensures stability.
For the RTQ2510, the voltage on the FB pin sets the output
voltage and is determined by the values of R1 and R2.
The values of R1 and R2 can be calculated for any voltage
using the formula given in Equation :
R1 + R2
0.8
VOUT
=
Output Noise
R2
Generally speaking, the dominant noise source is from
the internal bandgap for most LDOs. With the noise
reduction capacitor connecting to the NR pin of the
RTQ2510, the noise component contributed from bandgap
will not be significantly. Instead, the most noise source
comes from the the output resistor divider and the error
amplifier input. For general application to minimize noise,
using a 0.01μF noise-reduction capacitor (CNR) is
recommended.
Using lower values for R1 and R2 is recommended to
reduces the noise injected from the FB pin. Note that R1
is connected from VOUT pin to FB pin, and R2 is
connected from FB to GND.
Chip Enable Operation
The EN pin is the chip enable input. Pull the EN pin low
(<0.4V) will shutdown the device.During shutdown mode,
the RTQ2510 quiescent current drops to lower than 2μA.
Drive the EN pin to high (>1.2V, <6V) will turn on the
device again. For external timing control (e.g.RC),the EN
pin can also be externally pulled to High by adding a 100kΩ
or greater resistor from the VIN pin.
Thermal Considerations
Thermal protection limits power dissipation in the
RTQ2510. When the operation junction temperature
exceeds 160°C, the OTP circuit starts the thermal
shutdown function and turns the pass element off. The
pass element turns on again after the junction temperature
cools down by 20°C.
Current Limit
The RTQ2510 continuously monitors the output current
to protect the pass transistor against abnormal operations.
When an overload or short circuit is encountered, the
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RTQ2510-QA
The RTQ2510 output voltage will be closed to zero when
output short circuit occurs as shown in Figure 1. It can
reduce the chip temperature and provides maximum safety
to end users when output short circuit occurs.
resistance, θJA. The derating curves in Figure 2 allows
the designer to see the effect of rising ambient temperature
on the maximum power dissipation.
3.6
Four-Layer PCB
V
Short to GND
3.2
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0.0
OUT
V
I
OUT
ILIM’
OUT
IC Temperature
0
25
50
75
100
125
Ambient Temperature (°C)
Figure 1. Short-Circuit Protection when Output Short-
Circuit Occurs
Figure 2.Derating Curve of Maximum PowerDissipation
The junction temperature should never exceed the
absolute maximum junction temperature TJ(MAX), listed
under Absolute Maximum Ratings, to avoid permanent
damage to the device. The maximum allowable power
dissipation depends on the thermal resistance of the IC
package, the PCB layout, the rate of surrounding airflow,
and the difference between the junction and ambient
temperatures. The maximum power dissipation can be
calculated using the following formula :
PD(MAX) = (TJ(MAX) − TA) / θJA
where TJ(MAX) is the maximum junction temperature, TA is
the ambient temperature, and θJA is the junction-to-ambient
thermal resistance.
For continuous operation, the maximum operating junction
temperature indicated under Recommended Operating
Conditions is 125°C. The junction-to-ambient thermal
resistance, θJA, is highly package dependent. For a
VDFN-8L 3x3 package, the thermal resistance, θJA, is
31°C/W on a standard JEDEC 51-7 high effective-thermal-
conductivity four-layer test board. The maximum power
dissipation at TA = 25°C can be calculated as below :
PD(MAX) = (125°C − 25°C) / (31°C/W) = 3.22W for a
VDFN-8L 3x3 package.
The maximum power dissipation depends on the operating
ambient temperature for the fixed TJ(MAX) and the thermal
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Layout Consideration
GND
GND
R2
GND
FB
VOUT
VOUT
5
6
7
8
9
4
3
2
1
EN
NR
VIN
VIN
R1
Enable
signal input
CNR
COUT CBYPASS
CIN
GND layout trace should be
wider for thermal consideration.
Input capacitor must be
placed as close to the IC
as possible.
GND
Figure 3. PCB Layout Guide
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RTQ2510-QA
Outline Dimension
D2
D
L
E
E2
SEE DETAIL A
1
e
b
2
1
2
1
A
A3
DETAILA
Pin #1 ID and Tie Bar Mark Options
A1
Note : The configuration of the Pin #1 identifier is optional,
but must be located within the zone indicated.
Dimensions In Millimeters
Dimensions In Inches
Symbol
Min
Max
Min
Max
A
A1
A3
b
0.800
0.000
0.175
0.200
2.950
2.100
2.950
1.350
1.000
0.050
0.250
0.300
3.050
2.350
3.050
1.600
0.031
0.000
0.007
0.008
0.116
0.083
0.116
0.053
0.039
0.002
0.010
0.012
0.120
0.093
0.120
0.063
D
D2
E
E2
e
0.650
0.026
L
0.425
0.525
0.017
0.021
V-Type 8L DFN 3x3 Package
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Footprint Information
Footprint Dimension (mm)
Number of
Package
Pin
Tolerance
P
A
B
C
D
Sx
Sy
M
V/W/U/XDFN3*3-8
8
0.65
3.80
1.94
0.93
0.35
2.30
1.50
2.30
±0.05
Richtek Technology Corporation
14F, No. 8, Tai Yuen 1st Street, Chupei City
Hsinchu, Taiwan, R.O.C.
Tel: (8863)5526789
Richtek products are sold by description only. Customers should obtain the latest relevant information and data sheets before placing orders and should verify
that such information is current and complete. Richtek cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in a Richtek
product. Information furnished by Richtek is believed to be accurate and reliable. However, no responsibility is assumed by Richtek or its subsidiaries for its use;
nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent
or patent rights of Richtek or its subsidiaries.
DSQ2510-QA-00 November 2018
www.richtek.com
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