BD9161FVM [ROHM]
Output 1.5A or Less High-efficiency Step-down Switching Regulator with Built-in Power MOSFET; 输出1.5A或更少的高效率降压开关稳压器具有内置功率MOSFET型号: | BD9161FVM |
厂家: | ROHM |
描述: | Output 1.5A or Less High-efficiency Step-down Switching Regulator with Built-in Power MOSFET |
文件: | 总15页 (文件大小:394K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Single-chip Type with Built-in FET Switching Regulator Series
Output 1.5A or Less High-efficiency
Step-down Switching Regulator
with Built-in Power MOSFET
BD9161FVM
No.09027EAT29
●Description
ROHM’s high efficiency step-down switching regulator BD9161FVM is a power supply designed to produce 1.2volts
(low voltage) from 3.3volts power supply line. Offers high efficiency with our original pulse skip control technology and
synchronous rectifier. Employs a current mode control system to provide faster transient response to sudden change
in load.
●Features
1) Offers fast transient response with current mode PWM control system.
2) Offers highly efficiency for all load range with synchronous rectifier (Nch/Pch FET)
3) Incorporates 100% Duty function.
4) Incorporates soft-start function.
5) Incorporates thermal protection and ULVO functions.
6) Incorporates short-current protection circuit with time delay function.
7) Incorporates shutdown function Icc=0μA (Typ.)
8) Employs small surface mount package MSOP8
●Use
Power supply for HDD, DVS and for LSI of CPU, ASIC
●Absolute Maximum Rating (Ta=25℃)
Parameter
VCC voltage
Symbol
VCC
Rating
-0.3~+7 *1
-0.3~+7 *1
-0.3~+7
-0.3~+7
387.5*2
Unit
V
PVCC voltage
PVCC
EN
V
EN Voltage
V
SW, ITH Voltage
Power Dissipation 1
Power Dissipation 2
Power Dissipation 3
Power Dissipation 4
SW,ITH
Pd1
V
mW
mW
℃
Pd2
587.4*3
Topr
-25~+85
-55~+150
+150
Tstg
℃
EN voltage
Tjmax
℃
*1 Pd should not be exceeded.
*2 Derating in done 3.1mW/℃ for temperatures above Ta=25℃.
*3 Derating in done 4.7mW/℃ for temperatures above Ta=25℃,Mounted on 70mm×70mm×1.6mm Glass Epoxy PCB.
●Operating Conditions (Ta=25℃)
Limits
Parameter
Symbol
Unit
Min.
2.5
2.5
0
Typ.
Max.
4.5
VCC voltage
VCC*4
PVCC*4
EN
3.3
V
V
V
V
A
PVCC voltage
3.3
4.5
EN voltage
-
-
-
VCC
3.3
Output Voltage Setting Range
SW,ITH
Isw*4
1.0
-
SW, ITH average output current
0.6
*4 Pd should not be exceeded.
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© 2009 ROHM Co., Ltd. All rights reserved.
2009.05 - Rev.A
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Technical Note
BD9161FVM
●Electrical Characteristics
◎(Ta=25℃, VCC=PVCC=3.3V, EN=VCC, unless otherwise specified.)
Limits
Typ.
0
Parameter
Symbol
Unit
Conditions
Min.
Max.
10
Standby current
ISTB
ICC
-
-
μA
μA
V
EN=GND
Bias current
200
GND
VCC
1
400
0.8
-
EN Low voltage
VENL
VENH
IEN
-
Standby mode
Active mode
VEN=3.3V
EN High voltage
2.0
-
V
EN input current
10
μA
MHz
Ω
Oscillation frequency
Pch FET ON resistance
Nch FET ON resistance
Output voltage
FOSC
RONP
RONN
VOUT
ITHSI
0.8
-
1
1.2
0.6
0.68
0.816
-
0.35
0.37
0.8
20
PVCC=3.3V
PVCC=3.3V
-
Ω
0.784
10
10
2.2
2.22
0.5
1
V
ITH SInk current
μA
μA
V
VOUT =H
VOUT =L
ITH Source Current
UVLO threshold voltage
UVLO hysteresis voltage
Soft start time
ITHSO
VUVLO1
VUVLO2
TSS
20
-
2.3
2.35
1
2.4
2.5
2
VCC=H→L
VCC=L→H
V
ms
ms
V
Timer latch time
TLATCH
VSCP
2
3
SCP/TSD operated
Output Short circuit Threshold Voltage
-
0.4
0.56
VOUT =H→L
●Block Diagram, Application Circuit
VCC
EN
3
VCC
2.9 0.1
8
7
VREF
+6
4
-4
Max3.25(include.BURR)
3.3V
Input
8
5
PVCC
Current
Comp.
D 9 1
Current
Sense/
Protect
6
1
R
Q
Gm Amp.
S
Lot No.
Output
SLOPE
1
4
CLK
+
6
+0.05
1PIN MARK
0.145
OSC
-0.03
0.475
VCC
SW
Driver
Logic
S
UVLO
PGND
Soft
Start
+0.05
-0.04
5
4
0.22
TSD
SCP
GND
0.08 S
0.65
1
2
ADJ
ITH
MSOP8 (Unit:mm)
Fig.1 BD9161FVM Dimension
●Pin No. & function table
Fig.2 BD9161FVM Block Diagram
PIN function
Pin No.
Pin name
ADJ
1
2
3
4
5
6
7
8
Output voltage Feedback pin (Adjustable)
GmAmp output pin/Connected phase compensation capacitor
Enable pin (Active High)
ITH
EN
GND
PGND
SW
Ground
Nch FET source pin
Pch/Nch FET drain output pin
Pch FET source pin
PVCC
VCC
VCC power supply input pin
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2009.05 - Rev.A
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Technical Note
BD9161FVM
●Characteristics data(Reference data)
3.0
2.0
1.0
0.0
3.0
2.0
1.0
0.0
3.0
【VOUT=2.5V】
【VOUT=2.5V】
【VOUT=2.5V】
Ta=25℃
Io=0A
2.0
1.0
0.0
VCC=3.3V
Ta=25℃
Io=0A
VCC=3.3V
Ta=25℃
0
1
2
3
4
0
1
2
3
4
0
1
2
3
EN VOLTAGE:VEN[V]
INPUT VOLTAGE:V [V]
CC
OUTPUT CURRENT:I
[A]
OUT
Fig.4 Ven-Vout
Fig.3 Vcc-Vout
Fig.5 Iout-Vout
1.20
1.10
1.00
0.90
0.80
0.70
0.60
0.50
0.40
0.30
0.20
0.10
0.00
100
90
80
70
60
50
40
30
20
10
0
2.55
2.54
2.53
2.52
2.51
2.50
2.49
2.48
2.47
2.46
2.45
【VOUT=2.5V】
VCC=3.3V
VCC=3.3V
Io=0A
【VOUT=2.5V】
VCC=3.3V
Ta=25℃
-25 -15 -5
5
15 25 35 45 55 65 75 85
-25 -15 -5
5
15 25 35 45 55 65 75 85
1
10
100
1000
TEMPERATURE:Ta[
]
℃
TEMPERATURE:Ta[
]
OUTPUT CURRENT:IOUT[mA]
℃
Fig.8 Ta - Fosc
Fig. 6 Ta-VOUT
Fig.7 Efficiency
0.40
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0.00
1.2
1.1
1
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
VCC=3.3V
PMOS
NMOS
0.9
VCC=3.3V
0.8
-25 -15 -5
5
15 25 35 45 55 65 75 85
-25 -15 -5
5
15 25 35 45 55 65 75 85
2.5
3
3.5
4
4.5
TEMPERATURE:Ta[
]
℃
TEMPERATURE:Ta[
]
℃
INPUT VOLTAGE:VCC[V]
Fig.9 Ta-VEN
Fig.10 Ta-ICC
Fig.11 Vcc-Fosc
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2009.05 - Rev.A
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Technical Note
BD9161FVM
●Characteristics data(Reference data) – Continued
【SLLMTM control
VOUT=2.5V】
【VOUT=2.5V】
【PWM control
VOUT=2.5V】
VCC=PVCC
=EN
SW
SW
VOUT
VOUT
VOUT
VCC=3.3V
Ta=25℃
Io=0A
VCC=3.3V
Ta=25℃
VCC=3.3V
Ta=25℃
Fig.14 SW waveform Io=500mA
Fig.12 Soft start waveform
Fig.13 SW waveform Io=10mA
【100% Duty
VOUT=2.5V】
【VOUT=2.5V】
【VOUT=2.5V】
VOUT
VOUT
SW
VOUT
IOUT
IOUT
VCC=2.7V
Ta=25℃
VCC=3.3V
Ta=25℃
VCC=3.3V
Ta=25℃
Fig. 16 Transient response
Io=250→500mA(10μs)
Fig.17 Transient response
Io=500→250mA(10μs)
Fig. 15 SW waveform Io=600mA
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2009.05 - Rev.A
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Technical Note
BD9161FVM
●Information on advantages
Advantage 1:Offers fast transient response with current mode control system.
Conventional product (VOUT of which is 2.5 volts)
BD9161FVM (Load response IO=250mA→500mA)
VOUT
VOUT
40mV
98mV
IOUT
IOUT
Voltage drop due to sudden change in load was reduced by about 50%.
Fig.18 Comparison of transient response
Advantage 2: Offers high efficiency for all load range.
・For lighter load:
Utilizes the current mode control mode called SLLMTM for lighter load, which reduces various dissipation such as
switching dissipation (PSW), gate charge/discharge dissipation, ESR dissipation of output capacitor (PESR) and
on-resistance dissipation (PRON) that may otherwise cause degradation in efficiency for lighter load.
Achieves efficiency improvement for lighter load.
100
SLLMTM
・For heavier load:
②
Utilizes the synchronous rectifying mode and the low on-resistance
MOS FETs incorporated as power transistor.
50
①
①inprovement by SLLMTM system
PWM
②improvement by synchronous rectifier
0
ON resistance of P-channel MOS FET: 0.35 Ω (Typ.)
ON resistance of N-channel MOS FET: 0.37 Ω (Typ.)
0.001
0.01
0.1
1
Output current Io[A]
Fig.19 Efficiency
Achieves efficiency improvement for heavier load.
Offers high efficiency for all load range with the improvements mentioned above.
Advantage 3: ・Supplied in smaller package due to small-sized power MOS FET incorporated.
・Allows reduction in size of application products
・Output capacitor Co required for current mode control: 10 μF ceramic capacitor
・Inductance L required for the operating frequency of 1 MHz: 4.7 μH inductor
Reduces a mounting area required.
VCC
15mm
CIN
Cin
RITH
L
DC/DC
Convertor
Controller
L
VOUT
10mm
CITH
RITH
CITH
Co
CO
Fig.20 Example application
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2009.05 - Rev.A
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© 2009 ROHM Co., Ltd. All rights reserved.
Technical Note
BD9161FVM
●Operation
BD9161FVM is a synchronous rectifying step-down switching regulator that achieves faster transient response by
employing current mode PWM control system. It utilizes switching operation in PWM (Pulse Width Modulation) mode for
heavier load, while it utilizes SLLMTM (Simple Light Load Mode) operation for lighter load to improve efficiency.
○Current mode PWM control
Synthesizes a PWM control signal with a inductor current feedback loop added to the voltage feedback.
・PWM (Pulse Width Modulation) control
The oscillation frequency for PWM is 1 MHz. SET signal form OSC turns ON a P-channel MOS FET (while a
N-channel MOS FET is turned OFF), and an inductor current IL increases. The current comparator (Current Comp)
receives two signals, a current feedback control signal (SENSE: Voltage converted from IL) and a voltage feedback
control signal (FB), and issues a RESET signal if both input signals are identical to each other, and turns OFF the
P-channel MOS FET (while a N-channel MOS FET is turned ON) for the rest of the fixed period. The PWM control
repeats this operation.
・SLLMTM (Simple Light Load Mode) control
When the control mode is shifted from PWM for heavier load to the one for lighter load or vise versa, the switching
pulse is designed to turn OFF with the device held operated in normal PWM control loop, which allows linear operation
without voltage drop or deterioration in transient response during the mode switching from light load to heavy load or
vise versa.
Although the PWM control loop continues to operate with a SET signal from OSC and a RESET signal from Current
Comp, it is so designed that the RESET signal is held issued if shifted to the light load mode, with which the switching
is tuned OFF and the switching pulses are thinned out under control. Activating the switching intermittently reduces
the switching dissipation and improves the efficiency.
・100% Duty control
Max duty is 100%. (@ Pch MOS FET always ON) In usual PWM control, in case output voltage cannot keep (ex, drop
of input voltage), oscillation frequency becomes lower and finally it becomes 100% duty. The output voltage is a value
that depends only by on a voltage hang from the input voltage to Pch MOS FET, and can keep the output voltage even
with the low input voltage.
SENSE
Current
Comp
VOUT
RESET
FB
R
S
Q
IL
Level
Shift
SET
Driver
Logic
VOUT
Gm Amp.
SW
Load
OSC
ITH
Fig.21 Diagram of current mode PWM control
PVCC
SENSE
PVCC
Current
Comp
Current
SENSE
Comp
FB
FB
SET
SET
GND
GND
GND
GND
RESET
SW
RESET
GND
SW
GND
IL
IL(AVE)
IL
0A
VOUT
VOUT
VOUT(AVE)
VOUT(AVE)
Not switching
Fig.23 SLLMTM switching timing chart
Fig.22 PWM switching timing chart
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Technical Note
BD9161FVM
●Description of operations
・Soft-start function
EN terminal shifted to “High” activates a soft-starter to gradually establish the output voltage with the current limited
during startup, by which it is possible to prevent an overshoot of output voltage and an inrush current.
・Shutdown function
With EN terminal shifted to “Low”, the device turns to Standby Mode, and all the function blocks including reference
voltage circuit, internal oscillator and drivers are turned to OFF. Circuit current during standby is 0μF (Typ.).
・UVLO function
Detects whether the input voltage sufficient to secure the output voltage of this IC is supplied. And the hysteresis width
of 50 mV (Typ.) is provided to prevent output chattering.
Hysteresis 50mV
VCC
EN
VOUT
Tss
Tss
Tss
Soft start
Standby
mode
Standby
mode
Standby mode
Operating mode
Operating mode
Operating mode
Standby mode
UVLO
EN
UVLO
UVLO
Fig.24 Soft start, Shutdown, UVLO timing chart
・Short-current protection circuit with time delay function
Turns OFF the output to protect the IC from breakdown when the incorporated current limiter is activated continuously for
the fixed time (TLATCH) or more. The output thus held tuned OFF may be recovered by restarting EN or by re-unlocking
UVLO.
EN
Output OFF
latch
VOUT
Limit
IL
1msec
Standby
mode
Standby
mode
Operating mode
Operating mode
EN
Timer latch
EN
Fig.25 Short-current protection circuit with time delay timing chart
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Technical Note
BD9161FVM
●Switching regulator efficiency
Efficiency ŋ may be expressed by the equation shown below:
VOUT×IOUT
POUT
POUT
η=
×100[%]=
×100[%]=
×100[%]
Vin×Iin
Pin
POUT+PDα
Efficiency may be improved by reducing the switching regulator power dissipation factors PDα as follows:
Dissipation factors:
1) ON resistance dissipation of inductor and FET:PD(I2R)
2) Gate charge/discharge dissipation:PD(Gate)
3) Switching dissipation:PD(SW)
4) ESR dissipation of capacitor:PD(ESR)
5) Operating current dissipation of IC:PD(IC)
2
1)PD(I2R)=IOUT ×(RCOIL+RON) (RCOIL[ꢀ]:DC resistance of inductor, RON[ꢀ]:ON resistance of FET
IOUT[A]:Output current.)
2)PD(Gate)=Cgs×f×V (Cgs[F]:Gate capacitance of FET, f[H]:Switching frequency, V[V]:Gate driving voltage of FET)
Vin2×CRSS×IOUT×f
3)PD(SW)=
(CRSS[F]:Reverse transfer capacitance of FET, IDRIVE[A]:Peak current of gate.)
IDRIVE
2
4)PD(ESR)=IRMS ×ESR (IRMS[A]:Ripple current of capacitor, ESR[ꢀ]:Equivalent series resistance.)
5)PD(IC)=Vin×ICC (ICC[A]:Circuit current.)
●Consideration on permissible dissipation and heat generation
As this IC functions with high efficiency without significant heat generation in most applications, no special consideration is
needed on permissible dissipation or heat generation. In case of extreme conditions, however, including lower input
voltage, higher output voltage, heavier load, and/or higher temperature, the permissible dissipation and/or heat generation
must be carefully considered.
For dissipation, only conduction losses due to DC resistance of inductor and ON resistance of FET are considered.
Because the conduction losses are considered to play the leading role among other dissipation mentioned above including
gate charge/discharge dissipation and switching dissipation.
1000
800
2
①Using an IC alone
θj-a=322.6℃/W
②mounted on glass epoxy PCB
θj-a=212.8℃/W
P=IOUT ×(RON)
RON=D×RONP+(1-D)×RONN
D:ON duty (=VOUT/VCC)
RONP:ON resistance of P-channel MOS FET
RONN:ON resistance of N-channel MOS FET
IOUT:Output current
②587.4mW
①387.5mW
600
400
200
0
0
25
50
75 85 100
125
150
Ambient temperature:Ta [℃]
Fig.26 Thermal derating curve
(MSOP8)
If VCC=3.3V, VOUT=2.5V RONP=0.35ꢀ, RONN=0.37ꢀ
IOUT=0.6A, for example,
D=VOUT/VCC=2.5/3.3=0.758
RON=0.758×0.35+(1-0.758)×0.37
=0.2653+0.08954
=0.35484[ꢀ]
P=0.62×0.35484
≒127.7[mV]
As RONP is greater than RONN in this IC, the dissipation increases as the ON duty becomes greater. With the consideration
on the dissipation as above, thermal design must be carried out with sufficient margin allowed.
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Technical Note
BD9161FVM
●Selection of components externally connected
1. Selection of inductor (L)
IL
The inductance significantly depends on output ripple current.
As seen in the equation (1), the ripple current decreases as the
inductor and/or switching frequency increases.
ΔIL
VCC
(VCC-VOUT)×VOUT
[A]・・・(1)
ΔIL=
L×VCC×f
IL
Appropriate ripple current at output should be 20~30% more or less
of the maximum output current.
VOUT
ΔIL=0.25×IOUTmax. [A]・・・(2)
L
Co
(VCC-VOUT)×VOUT
L=
[H]・・・(3)
ΔIL×VCC×f
(ΔIL: Output ripple current, and f: Switching frequency)
Fig.27 Output ripple current
* Current exceeding the current rating of the inductor results in magnetic saturation of the inductor, which decreases
efficiency. The inductor must be selected allowing sufficient margin with which the peak current may not exceed its
current rating.
If VCC=3.3V, VOUT=2.5V, f=1MHz, ΔIL=0.25×0.6A=0.15A
(3.3-2.5)×2.5
0.15×3.3×1M
L≧
≧4.04μ
* Select the inductor of low resistance component (such as DCR and ACR) to minimize dissipation in the inductor for
better efficiency.
2. Selection of output capacitor (CO)
VCC
Output capacitor should be selected with the consideration on the stability region
and the equivalent series resistance required to smooth ripple voltage.
Output ripple voltage is determined by the equation (4):
VOUT
L
ΔVOUT=ΔIL×ESR [V]・・・(4)
ESR
Co
(ΔIL: Output ripple current, ESR: Equivalent series resistance of output capacitor)
*Rating of the capacitor should be determined allowing sufficient margin against
output voltage. Less ESR allows reduction in output ripple voltage.
Fig.28 Output capacitor
Inappropriate capacitance may cause problem in startup. A 10μF to 100μF ceramic capacitor is recommended.
3. Selection of input capacitor (Cin)
Input capacitor to select must be a low ESR capacitor of the capacitance
sufficient to cope with high ripple current to prevent high transient voltage. The
ripple current IRMS is given by the equation (5):
VCC
Cin
√
VOUT
VOUT(VCC-VOUT)
IRMS=IOUT×
[A]・・・(5)
L
VCC
Co
< Worst case > IRMS(max.)
IOUT
2
When VCC is twice the Vout, IRMS=
Fig.29 Input capacitor
If VCC=3.3V, VOUT=2.5V, and IOUTmax.=0.6A
√
2.5(3.3-2.5)
IRMS=0.6×
=0.284[ARMS]
5
A low ESR 10μF/10V ceramic capacitor is recommended to reduce ESR dissipation of input capacitor for better
efficiency.
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Technical Note
BD9161FVM
4. Determination of RITH, CITH that works as a phase compensator
As the Current Mode Control is designed to limit a inductor current, a pole (phase lag) appears in the low frequency area
due to a CR filter consisting of a output capacitor and a load resistance, while a zero (phase lead) appears in the high
frequency area due to the output capacitor and its ESR. So, the phases are easily compensated by adding a zero to the
power amplifier output with C and R as described below to cancel a pole at the power amplifier.
fp(Min.)
1
2π×RO×CO
1
A
0
fp=
fp(Max.)
Gain
[dB]
fz(ESR)=
fz(ESR)
2π×ESR×CO
IOUTMin.
IOUTMax.
Pole at power amplifier
When the output current decreases, the load resistance Ro
increases and the pole frequency lowers.
0
Phase
[deg]
-90
1
fp(Min.)=
fp(Max.)=
[Hz]←with lighter load
[Hz]←with heavier load
2π×ROMax.×CO
Fig.30 Open loop gain characteristics
1
2π×ROMin.×CO
A
fz(Amp.)
Zero at power amplifier
Gain
[dB]
Increasing capacitance of the output capacitor lowers the pole
frequency while the zero frequency does not change. (This
is because when the capacitance is doubled, the capacitor
ESR reduces to half.)
0
0
Phase
[deg]
1
fz(Amp.)=
-90
2π×RITH.×CITH
Fig.31 Error amp phase compensation characteristics
Cin
L
VCC
VCC,PVCC
EN
SW
VOUT
RO
VOUT
VOUT
ITH
ESR
CO
GND,PGND
RITH
CITH
Fig.32 Typical application
Stable feedback loop may be achieved by canceling the pole fp (Min.) produced by the output capacitor and the load
resistance with CR zero correction by the error amplifier.
fz(Amp.)= fp(Min.)
1
1
=
2π×RITH×CITH
2π×ROMax.×CO
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Technical Note
BD9161FVM
5. Determination of output voltage
The output voltage VOUT is determined by the equation (6):
VOUT=(R2/R1+1)×VADJ・・・(6) VADJ: Voltage at ADJ terminal (0.8V Typ.)
With R1 and R2 adjusted, the output voltage may be determined as required.
(Adjustable output voltage range: 1.0V~3.3V )
L
6
1
Output
SW
Co
R2
R1
ADJ
Use 1 kꢀ~100 kꢀ resistor for R1. If a resistor of the resistance higher than
100 kꢀ is used, check the assembled set carefully for ripple voltage etc.
Fig.33 Determination of output voltage
●BD9161FVM Cautions on PC Board layout
ADJ
ITH
EN
VCC
PVCC
SW
1
2
3
4
8
7
6
5
RIN
VCC
RITH
CIN
①
L
EN
VOUT
CITH
CO
GND
PGND
GND
②
③
Fig.34 Board layout
①
②
For the sections drawn with heavy line, use thick conductor pattern as short as possible.
Lay out the input ceramic capacitor CIN closer to the pins PVCC and PGND, and the output capacitor Co closer to the
pin PGND.
③
Lay out CITH and RITH between the pins ITH and GND as neat as possible with least necessary wiring.
●Recommended component lists with above applications
Symbol
Part
Value
Manufacturer
TDK
Series
VLF5014AT-4R7M1R1
CMD6D11B
L
Coil
4.7μH
Sumida
ROHM
Kyocera
Kyocera
murata
murata
murata
murata
murata
ROHM
ROHM
ROHM
ROHM
ROHM
RIN
CIN
CO
Resistance
10ꢀ
10μF
10μF
MCR03 Series
CM316X5R106K10A
CM316X5R106K10A
GRM18 Series
GRM18 Series
GRM18 Series
GRM18 Series
GRM18 Series
MCR03 Series
MCR03 Series
MCR03 Series
MCR03 Series
MCR03 Series
Ceramic capacitor
Ceramic capacitor
Ceramic capacitor
VOUT=1.0V
820pF
560pF
470pF
470pF
330pF
6.8kꢀ
8.2kꢀ
12kꢀ
VOUT=1.2V
VOUT=1.5V
VOUT=1.8V
VOUT=2.5V
VOUT=1.0V
VOUT=1.2V
VOUT=1.5V
VOUT=1.8V
VOUT=2.5V
CITH
RITH
Resistance
12kꢀ
15kꢀ
* The parts list presented above is an example of recommended parts. Although the parts are sound, actual circuit characteristics should be checked on your
application carefully before use. Be sure to allow sufficient margins to accommodate variations between external devices and this IC when employing the
depicted circuit with other circuit constants modified. Both static and transient characteristics should be considered in establishing these margins. When
switching noise is substantial and may impact the system, a low pass filter should be inserted between the VCC and PVCC pins, and a schottky barrier
diode established between the SW and PGND pins.
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© 2009 ROHM Co., Ltd. All rights reserved.
2009.05 - Rev.A
10/13
Technical Note
BD9161FVM
●I/O equivalence circuit
PVCC
PVCC
PVCC
・SW pin
・EN pin
10kΩ
EN
SW
・ITH pin
・ADJ pin
VCC
10kΩ
ADJ
ITH
Fig.36 I/O equivalence circuit
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2009.05 - Rev.A
11/13
© 2009 ROHM Co., Ltd. All rights reserved.
Technical Note
BD9161FVM
●Cautions on use
1. Absolute Maximum Ratings
While utmost care is taken to quality control of this product, any application that may exceed some of the absolute
maximum ratings including the voltage applied and the operating temperature range may result in breakage. If broken,
short-mode or open-mode may not be identified. So if it is expected to encounter with special mode that may exceed the
absolute maximum ratings, it is requested to take necessary safety measures physically including insertion of fuses.
2. Electrical potential at GND
GND must be designed to have the lowest electrical potential In any operating conditions.
3. Short-circuiting between terminals, and mismounting
When mounting to pc board, care must be taken to avoid mistake in its orientation and alignment. Failure to do so may
result in IC breakdown. Short-circuiting due to foreign matters entered between output terminals, or between output
and power supply or GND may also cause breakdown.
4.Operation in Strong electromagnetic field
Be noted that using the IC in the strong electromagnetic radiation can cause operation failures.
5. Thermal shutdown protection circuit
Thermal shutdown protection circuit is the circuit designed to isolate the IC from thermal runaway, and not intended to
protect and guarantee the IC. So, the IC the thermal shutdown protection circuit of which is once activated should not
be used thereafter for any operation originally intended.
6. Inspection with the IC set to a pc board
If a capacitor must be connected to the pin of lower impedance during inspection with the IC set to a pc board, the
capacitor must be discharged after each process to avoid stress to the IC. For electrostatic protection, provide proper
grounding to assembling processes with special care taken in handling and storage. When connecting to jigs in the
inspection process, be sure to turn OFF the power supply before it is connected and removed.
7. Input to IC terminals
This is a monolithic IC with P+ isolation between P-substrate and each element as illustrated below. This P-layer and
the N-layer of each element form a P-N junction, and various parasitic element are formed.
If a resistor is joined to a transistor terminal as shown in Fig 37:
○P-N junction works as a parasitic diode if the following relationship is satisfied; GND>Terminal A (at resistor side), or
GND>Terminal B (at transistor side); and
○if GND>Terminal B (at NPN transistor side),
a parasitic NPN transistor is activated by N-layer of other element adjacent to the above-mentioned parasitic diode.
The structure of the IC inevitably forms parasitic elements, the activation of which may cause interference among circuits,
and/or malfunctions contributing to breakdown. It is therefore requested to take care not to use the device in such
manner that the voltage lower than GND (at P-substrate) may be applied to the input terminal, which may result in
activation of parasitic elements.
Resistor
Transistor (NPN)
B
Pin A
Pin B
Pin B
C
E
Pin A
B
C
E
N
N
N
P+
P+
P+
P+
N
P
P
Parasitic
element
N
N
Parasitic
element
P substrate
P substrate
GND
GND
GND
GND
Parasitic element
Parasitic element
Other adjacent elements
Fig.37 Simplified structure of monorisic IC
8. Ground wiring pattern
If small-signal GND and large-current GND are provided, It will be recommended to separate the large-current GND
pattern from the small-signal GND pattern and establish a single ground at the reference point of the set PCB so that
resistance to the wiring pattern and voltage fluctuations due to a large current will cause no fluctuations in voltages of the
small-signal GND. Pay attention not to cause fluctuations in the GND wiring pattern of external parts as well.
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© 2009 ROHM Co., Ltd. All rights reserved.
2009.05 - Rev.A
12/13
Technical Note
BD9161FVM
●Ordering part number
B D
9
1
6
1
F
V
M - T
R
Part No.
Package
Packaging and forming specification
TR: Embossed tape and reel
(MSOP8)
Part No.
FVM:MSOP8
MSOP8
<Tape and Reel information>
2.9 0.1
(MAX 3.25 include BURR)
Tape
Embossed carrier tape
3000pcs
+
6°
4°
Quantity
−4°
8
7
6
5
TR
Direction
of feed
The direction is the 1pin of product is at the upper right when you hold
reel on the left hand and you pull out the tape on the right hand
(
)
1
2
3
4
1PIN MARK
1pin
+0.05
0.145
–0.03
0.475
S
+0.05
0.22
–0.04
0.08
S
Direction of feed
Order quantity needs to be multiple of the minimum quantity.
0.65
Reel
(Unit : mm)
∗
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© 2009 ROHM Co., Ltd. All rights reserved.
2009.05 - Rev.A
13/13
Notice
N o t e s
No copying or reproduction of this document, in part or in whole, is permitted without the
consent of ROHM Co.,Ltd.
The content specified herein is subject to change for improvement without notice.
The content specified herein is for the purpose of introducing ROHM's products (hereinafter
"Products"). If you wish to use any such Product, please be sure to refer to the specifications,
which can be obtained from ROHM upon request.
Examples of application circuits, circuit constants and any other information contained herein
illustrate the standard usage and operations of the Products. The peripheral conditions must
be taken into account when designing circuits for mass production.
Great care was taken in ensuring the accuracy of the information specified in this document.
However, should you incur any damage arising from any inaccuracy or misprint of such
information, ROHM shall bear no responsibility for such damage.
The technical information specified herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or
implicitly, any license to use or exercise intellectual property or other rights held by ROHM and
other parties. ROHM shall bear no responsibility whatsoever for any dispute arising from the
use of such technical information.
The Products specified in this document are intended to be used with general-use electronic
equipment or devices (such as audio visual equipment, office-automation equipment, commu-
nication devices, electronic appliances and amusement devices).
The Products specified in this document are not designed to be radiation tolerant.
While ROHM always makes efforts to enhance the quality and reliability of its Products, a
Product may fail or malfunction for a variety of reasons.
Please be sure to implement in your equipment using the Products safety measures to guard
against the possibility of physical injury, fire or any other damage caused in the event of the
failure of any Product, such as derating, redundancy, fire control and fail-safe designs. ROHM
shall bear no responsibility whatsoever for your use of any Product outside of the prescribed
scope or not in accordance with the instruction manual.
The Products are not designed or manufactured to be used with any equipment, device or
system which requires an extremely high level of reliability the failure or malfunction of which
may result in a direct threat to human life or create a risk of human injury (such as a medical
instrument, transportation equipment, aerospace machinery, nuclear-reactor controller,
fuel-controller or other safety device). ROHM shall bear no responsibility in any way for use of
any of the Products for the above special purposes. If a Product is intended to be used for any
such special purpose, please contact a ROHM sales representative before purchasing.
If you intend to export or ship overseas any Product or technology specified herein that may
be controlled under the Foreign Exchange and the Foreign Trade Law, you will be required to
obtain a license or permit under the Law.
Thank you for your accessing to ROHM product informations.
More detail product informations and catalogs are available, please contact us.
ROHM Customer Support System
http://www.rohm.com/contact/
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R0039
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