BD9S109NUX-C (新产品) [ROHM]
BD9S109NUX-C是一款内置低导通电阻功率MOSFET的同步整流降压型DC-DC转换器。该产品可输出最大1A的电流,其开关频率高达2.2MHz,因此允许使用小型电感器。该产品采用电流模式控制,具有高速瞬态响应性能。另外,还内置有相位补偿电路,仅用很少的外置元器件即可构建应用产品。;型号: | BD9S109NUX-C (新产品) |
厂家: | ROHM |
描述: | BD9S109NUX-C是一款内置低导通电阻功率MOSFET的同步整流降压型DC-DC转换器。该产品可输出最大1A的电流,其开关频率高达2.2MHz,因此允许使用小型电感器。该产品采用电流模式控制,具有高速瞬态响应性能。另外,还内置有相位补偿电路,仅用很少的外置元器件即可构建应用产品。 开关 DC-DC转换器 电感器 |
文件: | 总40页 (文件大小:2037K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Datasheet
2.7 V to 5.5 V Input, 1 A
Single Synchronous Buck DC/DC Converter
for Automotive
BD9S109NUX-C
General Description
Key Specifications
BD9S109NUX-C is a synchronous buck DC/DC
Converter with built-in low On Resistance power
MOSFETs. It is capable of providing current up to 1 A.
Small inductor is applicable due to high switching
frequency of 2.2 MHz. It is a current mode control
DC/DC Converter and features high-speed transient
response. It has a built-in phase compensation circuit.
Applications can be created with a few external
components.
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Input Voltage:
2.7 V to 5.5 V
0.8 V to VIN
Output Voltage Setting:
Output Current:
1 A (Max)
Switching Frequency:
High Side FET ON Resistance:
Low Side FET ON Resistance:
Shutdown Circuit Current:
Operating Temperature:
2.2 MHz (Typ)
150 mΩ (Typ)
95 mΩ (Typ)
0 μA (Typ)
-40 °C to +125 °C
Package
VSON008X2020
W (Typ) x D (Typ) x H (Max)
2.0 mm x 2.0 mm x 0.6 mm
Features
◼
◼
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◼
◼
◼
AEC-Q100 Qualified(Note 1)
Single Synchronous Buck DC/DC Converter
Adjustable Soft Start Function
Output Discharge Function
Power Good Output
Input Under Voltage Lockout Protection (UVLO)
Short Circuit Protection (SCP)
Output Over Voltage Protection (OVP)
Over Current Protection (OCP)
Thermal Shutdown Protection (TSD)
(Note 1) Grade 1
Applications
◼
◼
Automotive Equipment
Other Electronic Equipment
Typical Application Circuit
VIN
VIN
PGD
SW
CIN1
VOUT
VEN
EN
SS
L1
COUT1
R1
R2
GND
FB
〇Product structure : Silicon integrated circuit 〇This product has no designed protection against radioactive rays
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BD9S109NUX-C
Pin Configuration
(TOP VIEW)
Pin Descriptions
Pin No.
Pin Name
Function
1, 2
SW
Switch pin. These pins are connected to the drain of the High Side FET and the Low Side FET.
Pin for setting the soft start time. The rise time of the output voltage can be specified by
connecting a capacitor to this pin. See Selection of Components Externally Connected 5.
Selection of Soft Start Capacitor for how to calculate the capacitance.
3
4
SS
VOUT feedback pin. Connect output voltage divider to this pin to set the output voltage. See
Selection of Components Externally Connected 2. Selection of Output Voltage Setting on how
to compute for the resistor values.
FB
Enable pin of the device. Turning this pin Low forces the device to enter the shutdown mode.
Turning this pin High makes the device to start up.
5
6
EN
Power Good pin, an open drain output. It is need to be pulled up to the power supply with a
resistor. See Function Explanations 2. Power Good Output for setting the resistance.
PGD
Power supply pin. Connecting a 10 µF (Typ) ceramic capacitor is recommended. The detail of a
selection is described in Selection of Components Externally Connected 3. Selection of Input
Capacitor.
7
VIN
8
-
GND
Ground pin.
A backside heat dissipation pad. Connecting to the internal PCB ground plane by using via
provides excellent heat dissipation characteristics.
EXP-PAD
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BD9S109NUX-C
Block Diagram
EN
VIN
Slope
5
3
7
VREF
SS
FB
Soft
Start
Error
Amplifier
PWM
Comparator
R
S
Q
Driver
Logic
4
SW
VOUT
1
2
OCP
OSC
UVLO
SCP
VIN
RDIS
OVP
TSD
GND
Power
Good
8
6
PGD
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BD9S109NUX-C
Description of Blocks
1. VREF
The VREF block generates the internal reference voltage.
2. UVLO (Under Voltage Lockout)
The UVLO block is for under voltage lockout protection. It shuts down the device when the VIN falls to 2.45 V (Typ) or less.
The threshold voltage has a hysteresis of 100 mV (Typ).
3. SCP (Short Circuit Protection)
This is the short circuit protection circuit. After soft start is judged to be completed, if the FB pin voltage falls to 0.56 V (Typ)
or less and remain in that state for 1 ms (Typ), output MOSFETs turn OFF for 14 ms (Typ) and then restart the operation.
4. OVP (Over Voltage Protection)
This is the output over voltage protection circuit. When the FB pin voltage becomes 0.88 V (Typ) or more, it turns the output
MOSFETs OFF. After output voltage falls 0.856 V (Typ) or less, the output MOSFETs return to normal operation.
5. TSD (Thermal Shutdown)
This is the thermal shutdown circuit. It shuts down the device when the junction temperature (Tj) reaches to 175 °C (Typ)
or more. When the Tj falls below the TSD threshold, the circuits are automatically restored to normal operation with
hysteresis of 25 °C (Typ).
6. OCP (Over Current Protection)
The Over Current Protection function operates by limiting the current that flows through High Side FET at each cycle of
the switching frequency.
7. Soft Start
The Soft Start circuit slows down the rise of output voltage during startup, which allows the prevention of output voltage
overshoot. The soft start time of the output voltage can be specified by connecting a capacitor to the SS pin. See Selection
of Components Externally Connected 5. Selection of Soft Start Capacitor for how to calculate the capacitance. A built-in
soft start function is provided the soft start with Soft Start Time tSS (Electrical Characteristics) when the SS pin is open.
8. Error Amplifier
The Error Amplifier block is an error amplifier and its inputs are the reference voltage and the FB pin voltage.
9. PWM Comparator
The PWM Comparator block compares the output voltage of the Error Amplifier and the Slope signal to determine the
output switching pulse duty.
10.OSC (Oscillator)
This block generates the oscillating frequency.
11.Driver Logic
This block controls switching operation and various protection functions.
12.Power Good
When the FB pin voltage reaches 0.8 V (Typ) within ±7 %, the built-in Nch MOSFET turns OFF and the PGD output turns
high. There is a 3 % hysteresis on the threshold voltage, so the PGD output turns low when the FB pin voltage reaches
outside ±10 % of 0.8 V (Typ).
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BD9S109NUX-C
Absolute Maximum Ratings
Parameter
Symbol
Rating
Unit
Input Voltage
VIN
VEN
-0.3 to +7.0
-0.3 to VIN
-0.3 to +7.0
-0.3 to VIN
150
V
V
EN Voltage
PGD Voltage
VPGD
V
FB, SS Voltage
VFB, VSS
Tjmax
Tstg
V
°C
°C
Maximum Junction Temperature
Storage Temperature Range
-55 to +150
Caution 1: Operating the IC over the absolute maximum ratings may damage the IC. The damage can either be a short circuit between pins or an open circuit
between pins and the internal circuitry. Therefore, it is important to consider circuit protection measures, such as adding a fuse, in case the IC is
operated over the absolute maximum ratings.
Caution 2: Should by any chance the maximum junction temperature rating be exceeded the rise in temperature of the chip may result in deterioration of the
properties of the chip. In case of exceeding this absolute maximum rating, design a PCB with thermal resistance taken into consideration by
increasing board size and copper area so as not to exceed the maximum junction temperature rating.
Thermal Resistance(Note 1)
Thermal Resistance (Typ)
Parameter
Symbol
Unit
1s(Note 3)
2s2p(Note 4)
VSON008X2020
Junction to Ambient
Junction to Top Characterization Parameter(Note 2)
θJA
181.90
20.00
47.90
7.00
°C/W
°C/W
ΨJT
(Note 1) Based on JESD51-2A(Still-Air), using a BD9S109NUX-C Chip.
(Note 2) The thermal characterization parameter to report the difference between junction temperature and the temperature at the top center of the outside surface
of the component package.
(Note 3) Using a PCB board based on JESD51-3.
(Note 4) Using a PCB board based on JESD51-5, 7.
Layer Number of
Measurement Board
Material
FR-4
Board Size
Single
114.3 mm x 76.2 mm x 1.57 mmt
Top
Copper Pattern
Thickness
70 μm
Footprints and Traces
Layer Number of
Measurement Board
Thermal Via(Note 5)
Material
FR-4
Board Size
114.3 mm x 76.2 mm x 1.6 mmt
2 Internal Layers
Pitch
Diameter
4 Layers
1.20 mm
Φ0.30 mm
Top
Copper Pattern
Bottom
Thickness
70 μm
Copper Pattern
Thickness
Copper Pattern
Thickness
70 μm
Footprints and Traces
74.2 mm x 74.2 mm
35 μm
74.2 mm x 74.2 mm
(Note 5) This thermal via connect with the copper pattern of layers 1,2, and 4. The placement and dimensions obey a land pattern.
Recommended Operating Conditions
Parameter
Symbol
Min
Max
Unit
Input Voltage
VIN
Ta
2.7
5.5
+125
1
V
°C
A
-40
Operating Temperature
Output Current
IOUT
-
Output Voltage Setting
SW Minimum ON Time
VOUT
tON_MIN
0.8(Note 1)
VIN
80
V
-
ns
(Note 1) Although the output voltage is configurable at 0.8 V and higher, it may be limited by the SW min ON pulse width. For the configurable range,
refer to 2. Selection of Output Voltage Setting in Selection of Components Externally Connected.
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BD9S109NUX-C
Electrical Characteristics (Unless otherwise specified Ta = Tj = -40 °C to +125 °C, VIN = 5.0 V, VEN = 5.0 V,
the typical value is defined at Ta = Tj = +25 °C)
Parameter
Symbol
Min
Typ
Max
Unit
Conditions
VIN
Shutdown Circuit Current
Circuit Current
ISDN
ICC
-
0
10
µA
µA
VEN = 0 V, Ta = 25 °C
IOUT = 0 mA
Non-switching, Ta = 25 °C
250
400
550
UVLO Detection Voltage
UVLO Release Voltage
UVLO Hysteresis Voltage
ENABLE
VUVLO1
VUVLO2
2.30
2.40
50
2.45
2.55
100
2.60
2.70
125
V
V
VIN Falling
VIN Rising
VUVLO-HYS
mV
EN Input Voltage High
EN Input Voltage Low
EN Input Current
Reference Voltage
FB Pin Voltage
VENH
VENL
IEN
1.0
GND
2.0
-
-
VIN
0.4
8.0
V
V
5.0
µA
VEN = 5.0 V, Ta = 25 °C
(Note 1)
VFB
IFB
0.788
-
0.800
0
0.812
0.2
V
FB Input Current
µA
VFB = 0.8 V, Ta = 25 °C
Soft Start
VIN = 5.0 V,
The SS Pin OPEN
0.5
1.0
2.0
ms
Soft Start Time
tSS
ISS
fSW
VIN = 3.3 V,
The SS Pin OPEN
0.6
1.2
2.4
ms
µA
SS Charge Current
Switching Frequency
Switching Frequency
Power Good
-1.4
-1.0
-0.6
2.0
2.2
2.4
MHz
VFB
x 0.87
VFB
x 0.90
VFB
x 1.07
VFB
x 1.04
VFB
x 0.90
VFB
x 0.93
VFB
x 1.10
VFB
x 1.07
VFB
x 0.93
VFB
x 0.96
VFB
x 1.13
VFB
x 1.10
PGD Falling (Fault) Voltage
PGD Rising (Good) Voltage
PGD Rising (Fault) Voltage
PGD Falling (Good) Voltage
VPGDTH_FF
VPGDTH_RG
VPGDTH_RF
VPGDTH_FG
V
V
V
V
VFB Falling
VFB Rising
VFB Rising
VFB Falling
PGD Output Leakage Current
PGD FET ON Resistance
PGD Output Low Level Voltage
Switch MOSFET
ILEAKPGD
RPGD
-
0
2.0
120
0.12
µA
Ω
VPGD = 5.0 V, Ta = 25 °C
30
60
VPGDL
0.03
0.06
V
IPGD = 1.0 mA
80
90
55
60
150
175
95
250
280
150
160
mΩ
mΩ
mΩ
mΩ
VIN = 5.0 V
VIN = 3.3 V
VIN = 5.0 V
VIN = 3.3 V
High Side FET ON Resistance
Low Side FET ON Resistance
RONH
RONL
ILEAKSWH
ILEAKSWL
100
VIN = 5.5 V, VSW = 0 V,
Ta = 25 °C
VIN = 5.5 V, VSW = 5.5 V,
Ta = 25 °C
High Side FET Leakage Current
Low Side FET Leakage Current
-
-
0
0
5.0
5.0
μA
μA
SW Current of Over Current
Protection(Note 2)
SW Discharge Resistance
IOCP
RDIS
1.35
20
2.00
50
2.65
100
A
Ω
SCP, OVP
Short Circuit Protection Detection
Voltage
Output Over Voltage Protection
Detection Voltage
VSCP
VOVP
0.48
0.56
0.64
V
V
VFB Falling
VFB Rising
0.856
0.880
0.904
(Note 1) It is tested in a proprietary test mode that connects FB to the output of the error amplifier.
(Note 2) This is design value. Not production tested.
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Typical Performance Curves
Unless otherwise specified VIN = VEN
10
550
500
450
400
350
300
250
VEN = 0 V
9
8
7
6
5
4
3
VIN = 5.0 V
VIN = 5.0 V
VIN = 3.3 V
2
1
0
VIN = 3.3 V
-50 -25
0
25
50
75 100 125
-50 -25
0
25
50
75
100 125
Temperature[°C]
Temperature[°C]
Figure 1. Shutdown Circuit Current vs Temperature
Figure 2. Circuit Current vs Temperature
2.40
0.812
0.808
0.804
0.800
0.796
0.792
0.788
2.35
2.30
2.25
2.20
2.15
2.10
2.05
2.00
VIN = 5.0 V
VIN = 5.0 V
VIN = 3.3 V
VIN = 3.3 V
-50 -25
0
25
50
75 100 125
-50 -25
0
25
50
75 100 125
Temperature[°C]
Temperature[°C]
Figure 3. Switching Frequency vs Temperature
Figure 4. FB Pin Voltage vs Temperature
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BD9S109NUX-C
Typical Performance Curves – continued
-0.60
-0.70
-0.80
-0.90
-1.00
-1.10
-1.20
-1.30
-1.40
2.0
CSS = OPEN
1.8
1.6
VIN = 3.3 V
VIN = 3.3 V
1.4
1.2
1.0
0.8
VIN = 5.0 V
0.6
0.4
0.2
0.0
VIN = 5.0 V
-50 -25
0
25
50
75 100 125
-50 -25
0
25
50
75 100 125
Temperature[°C]
Temperature[°C]
Figure 5. Soft Start Time vs Temperature
Figure 6. SS Charge Current vs Temperature
280
260
240
220
200
180
160
140
120
100
80
160
150
140
130
120
110
100
90
VIN = 3.3 V
VIN = 3.3 V
VIN = 5.0 V
80
VIN = 5.0 V
70
60
50
-50 -25
0
25
50
75 100 125
-50 -25
0
25
50
75 100 125
Temperature[°C]
Temperature[°C]
Figure 7. High Side FET ON Resistance vs Temperature
Figure 8. Low Side FET ON Resistance vs Temperature
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BD9S109NUX-C
Typical Performance Curves – continued
5.0
5.0
4.0
3.0
2.0
1.0
0.0
VEN = 0 V
VEN = 0 V
4.0
3.0
2.0
VIN = 5.0 V
VIN = 5.0 V
VIN = 3.3 V
VIN = 3.3 V
1.0
0.0
-50 -25
0
25 50 75 100 125
Temperature [°C]
-50 -25
0
25
50
75 100 125
Temperature [°C]
Figure 9. High Side FET Leakage Current vs Temperature
Figure 10. Low Side FET Leakage Current vs Temperature
120
0.90
VIN = 5.0 V
VIN = 5.0 V
110
100
90
80
70
60
50
40
30
0.86
Rising Fault
VPGDTH_RF
Falling Good
VPGDTH_FG
0.82
0.78
0.74
0.70
Rising Good
VPGDTH_RG
Falling Fault
VPGDTH_FF
-50 -25
0
25
50
75 100 125
-50 -25
0
25
50
75 100 125
Temperature[°C]
Temperature[°C]
Figure 11. PGD Threshold Voltage vs Temperature
Figure 12. PGD FET ON Resistance vs Temperature
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BD9S109NUX-C
Typical Performance Curves – continued
1.0
0.9
0.8
0.7
0.6
0.5
0.4
2.70
2.65
VIN = 5.0 V
Release
High
2.60
2.55
2.50
2.45
Low
2.40
Detection
2.35
2.30
-50 -25
0
25
50
75 100 125
-50 -25
0
25
50
75 100 125
Temperature[°C]
Temperature[°C]
Figure 13. UVLO Voltage vs Temperature
Figure 14. EN Input Voltage vs Temperature
10
9
8
7
6
5
4
3
2
1
0
2.7
2.6
2.5
2.4
2.3
2.2
2.1
2.0
1.9
1.8
1.7
1.6
1.5
1.4
1.3
VIN = 5.0 V
VEN = 5.0 V
VEN = 3.3 V
-50
-25
0
25
50
75
100 125
-50 -25
0
25
50
75
100 125
Temperature[°C]
Temperature[°C]
Figure 15. EN Input Current vs Temperature
Figure 16. SW Current of Over Current Protection
vs Temperature
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BD9S109NUX-C
Typical Performance Curves – continued
0.64
0.9
0.89
0.88
0.87
0.86
0.85
0.84
0.83
VIN = 5.0 V
VIN = 5.0 V
Detection
0.62
Release
0.60
0.58
0.56
0.54
Detection
0.52
0.50
0.48
Release
-50 -25
0
25
50
75 100 125
-50 -25
0
25
50
75 100 125
Temperature[°C]
Temperature[°C]
Figure 17. Short Circuit Protection Detection Voltage
vs Temperature
Figure 18. Output Over Voltage Protection Detection Voltage
vs Temperature
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BD9S109NUX-C
Function Explanations
1.
Enable Control
The device shutdown can be controlled by the voltage applied to the EN pin. When VEN becomes 1.0 V or more, the
internal circuit is activated and the device starts up with soft start. When VEN becomes 0.4 V or less, the device is
shutdown.
VIN
0
t
t
t
VEN
VENH
VENL
0
VOUT
VOUT × 0.93 (Typ)
0
tSS
tWAIT
200 µs (Typ)
Figure 19. Enable ON/OFF Timing Chart
2.
Power Good Output
When the FB pin voltage reaches 0.8 V (Typ) within ±7 %, the PGD pin open drain MOSFET turns OFF and the output
turns high. There is a 3 % hysteresis on the threshold voltage, so when the FB pin voltage reaches outside ±10 % of
0.8 V (Typ), the PGD pin open drain MOSFET turns ON and the PGD pin is pulled down with impedance of 60 Ω (Typ).
It is recommended to use a pull-up resistor of 2 kΩ to 100 kΩ for the power source.
If an adjacent short with the EN pin is assumed, control by the EN signal may not be possible if the resistance value is
reduced. Check the actual application thoroughly before deciding the resistance value.
If the power good function is not used, connect the PGD pin to OPEN or GND.
+10 % (Typ)
+7 % (Typ)
VFB
-7 % (Typ)
-10 % (Typ)
PGD
Figure 20. Power Good Timing Chart
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BD9S109NUX-C
Function Explanations – continued
3.
Output Discharge Function
When even one of the following conditions is satisfied, output is discharged with 50 Ω (Typ) resistance through the SW
pin.
• VEN becomes 0.4 V or less
• VIN becomes 2.45 V (Typ) or less (UVLO)
• VFB becomes 0.56 V (Typ) or less and remains there for 1 ms (Typ) (SCP)
• VFB becomes 0.88 V (Typ) or more (OVP)
• Tj becomes 175 °C (Typ) or more (TSD)
When all of the above conditions are released, output discharge is stopped.
4.
Pre-bias Function
The device can start up without to sink large current from the output even when the output is pre-biased. For example,
if the device is turned ON/OFF by the EN pin, the output is discharged with the resistor of 50 Ω (Typ) during the EN
OFF section and the delay section tWAIT of 200 μs (Typ) after restarting, but both output MOSFETs are turned off. After
that, when the internal SS voltage reaches the high voltage 40 mV (Typ) than the internal FB voltage, the device starts
switching and the output rises to the set voltage with soft start.
tWAIT
200 µs (Typ)
EN
Soft Start
VOUT
0 V
Internal SS
40 mV (Typ)
FB
Output MOSFET OFF
SW
Discharge
OFF
ON
OFF
Figure 21. Pre-bias Timing Chart
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BD9S109NUX-C
Protection
1.
Short Circuit Protection (SCP)
The Short Circuit Protection block compares the FB pin voltage with the internal reference voltage VREF. When the FB
pin voltage has fallen to 0.56 V (Typ) or less and remained there for 1 ms (Typ), SCP stops the operation for 14 ms
(Typ) and subsequently initiates a restart. This protection circuit is effective in preventing damage due to sudden and
unexpected incidents. However, the device should not be used in applications characterized by continuous operation
of the protection circuit (e.g. when a load that significantly exceeds the output current capability of the chip is connected
at all times).
Short Circuit
Protection
Short Circuit
Protection Operation
The EN Pin
The FB Pin
≤ 0.56 V (Typ)
ON
OFF
OFF
1.0 V or more
0.4 V or less
Enabled
Disabled
≥ 0.60 V (Typ)
-
tSS
VOUT
1 ms (Typ)
1 ms (Typ)
0.8 V
VSCP : 0.56 V (Typ)
FB
SCP OFF : 0.60 V (Typ)
SW
LOW
IOCP
Inductor Current
(Output Load
Current)
Internal
HICCUP
Delay Signal
14 ms (Typ)
SCP Reset
Figure 22. Short Circuit Protection (SCP) Timing Chart
2.
Over Current Protection (OCP)
The Over Current Protection function operates by limiting the current that flows through High Side FET at each cycle
of the switching frequency. This protection circuit is effective in preventing damage due to sudden and unexpected
incidents. However, the device should not be used in applications characterized by continuous operation of the
protection circuit (e.g. when a load that significantly exceeds the output current capability of the chip is connected at
all times).
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BD9S109NUX-C
Protection – continued
3.
Under Voltage Lockout Protection (UVLO)
It shuts down the device when the VIN pin falls to 2.45 V (Typ) or less.
The threshold voltage has a hysteresis of 100 mV (Typ).
VIN ( = VEN
)
VUVLO-HYS
100 mV (Typ)
VUVLO2 : 2.55 V (Typ)
VUVLO1 : 2.45 V (Typ)
0 V
tWAIT
200 µs (Typ)
VOUT
tSS
SW
Normal operation
UVLO
Normal operation
Figure 23. UVLO Timing Chart
4.
5.
Thermal Shutdown (TSD)
This is the thermal shutdown circuit that prevents heat damage to the IC. Normal operation should always be within
the IC’s maximum junction temperature rating. However, if the rating is exceeded for a continued period and the junction
temperature (Tj) rises to 175 °C (Typ), the TSD circuit activates and the output MOSFETs turn OFF. When the Tj falls
below the TSD threshold, the circuits are automatically restored to normal operation. Note that the TSD circuit operates
in a situation that exceeds the absolute maximum ratings and therefore, under no circumstances, should the TSD
circuit be used in a set design or for any purpose other than protecting the IC from heat damage.
Over Voltage Protection (OVP)
The device incorporates an over voltage protection circuit to minimize the output voltage overshoot when recovering
from strong load transients or output fault conditions. If the FB pin voltage becomes over or equal to 0.88 V (Typ),
which is Output Over Voltage Protection Detection Voltage, the MOSFETs on the output stage are turned OFF to
prevent the increase in the output voltage. After the detection, the switching operation resumes if the output decreases,
the over voltage state is released, and FB pin voltage reaches 0.8 V (Typ). Output Over Voltage Protection Detection
Voltage and release voltage have a hysteresis of 3 %.
VOUT
VOVP : 0.88 V (Typ)
hys : 3 %
FB
SW
Internal OVP
Signal
Figure 24. OVP Timing Chart
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BD9S109NUX-C
Selection of Components Externally Connected
Contact us if not use the recommended constant in this section.
Necessary parameters in designing the power supply are as follows:
Table 1. Application Specification
Symbol
Parameter
Input Voltage
Output Voltage
Switching Frequency
Output Ripple Current
Output Capacitor
Example Value
5.0 V
1.2 V (Typ)
2.2 MHz (Typ)
0.61 A
10 μF
8.55 ms (Typ)
1.0 A
VIN
VOUT
fSW
ΔIL
COUT
tSS
Soft Start Time
Maximum Output Current
IOUTMAX
Application Example
R3
VIN
VIN
PGD
PGD
CIN1
VEN
VOUT
EN
SS
SW
FB
L1
R100
R1
COUT1
GND
CSS
R2
Figure 25. Application Circuit
1. Switching Frequency
The switching frequency fSW is fixed at 2.2 MHz (Typ) inside the IC.
2. Selection of Output Voltage Setting
The output voltage value can be set by the feedback resistance ratio.
푅 +푅
1
2 × 0.8 [V]
VOUT
푉푂푈푇
=
푅
2
R1
R2
FB
※
SW Minimum ON Time that BD9S109NUX-C can output
stably in the entire load range is 80 ns.
Use this value to calculate the input and output
conditions that satisfy the following equation.
0.8 V(Typ)
푉푂푈푇
[
]
80 ns ≤
푉
퐼푁 × 푓
푆푊
Figure 26. Feedback Resistor Circuit
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BD9S109NUX-C
Selection of Components Externally Connected – continued
3. Selection of Input Capacitor
Use ceramic type capacitor for the input capacitor CIN1. CIN1 is used to suppress the input ripple noise and this capacitor
is effective by being placed as close as possible to the VIN pin. Set the capacitor value for CIN1 so that it does not fall to
4.7 μF against the capacitor value variances, temperature characteristics, DC bias characteristics, aging characteristics,
and etc. Use components which are comparatively same with the components used in “Application Example”. Moreover,
factors like the PCB layout and the position of the capacitor may lead to IC malfunction. Refer to “PCB Layout Design”.
In addition, the capacitor with value 0.1 μF can be added to suppress the high frequency noise as an option.
4. Selection of Output LC Filter
In order to supply a continuous current to the load, the DC/DC converter requires an LC filter for smoothing the output
voltage. Use the inductor with value 0.68 μH to 1.0 μH.
VIN
IL
Inductor Saturation Current > IOUTMAX + ∆IL/2
L1
VOUT
∆IL
Driver
Maximum Output Current IOUTMAX
COUT
t
Figure 27. Waveform of Current through Inductor
Figure 28. Output LC Filter Circuit
Inductor ripple current ΔIL can be represented by the following equation.
ꢁ
(
)
×
∆ꢀ퐿 = 푉푂푈푇 × 푉 − 푉푂푈푇
= 6ꢈ0 [mA]
퐼푁
ꢂ
ꢃꢄ
×ꢅ ×퐿
ꢆꢇ
1
where:
푉
푉푂푈푇
ꢉꢁ
is the 5.0 V.
is the 1.2 V.
is the 0.68 µH.
퐼푁
푓
푆푊
is the 2.2 MHz (Switching Frequency).
The rated current of the inductor must be larger than the sum of the maximum output current and 1/2 of the inductor
ripple current ΔIL.
Use ceramic type capacitor for the output capacitor COUT. The capacitance value of COUT is recommended in the range
between 10 μF and 22 μF. COUT affects the output ripple voltage characteristics. COUT must satisfy the required ripple
voltage characteristics.
The output ripple voltage can be represented by the following equation.
ꢁ
∆푉푅푃퐿 = ∆ꢀ퐿 × ꢊꢋ퐸푆푅 ꢌ ꢍ×퐶
ꢑ [V]
ꢆꢇ
×ꢅ
ꢎꢏꢐ
where:
ꢋ퐸푆푅 is the Equivalent Series Resistance (ESR) of the output capacitor.
The output ripple voltage ΔVRPL can be represented by the following equation.
ꢁ
∆푉푅푃퐿 = 0.6ꢈ0 퐴 × ꢊꢈ0 푚훺 ꢌ ꢍ×ꢁꢒ 휇퐹×ꢓ.ꢓ 푀퐻푧ꢑ = 9.57 [mV]
where:
ꢔ푂푈푇
ꢋ퐸푆푅
is the 10 µF.
is the 10 mΩ.
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BD9S109NUX-C
4. Selection of Output LC Filter – continued
In addition, for the total value of capacitance in the output line COUT (Max), need to satisfy the value obtained by the
following equation.
(푡
ꢖꢓꢒꢒ 휇푠)×(퐼
ꢖ퐼
)
(
)
ꢎꢗꢘ(ꢕ푖푛) ꢆꢇꢆꢐꢙꢚꢐ
ꢆꢆ ꢕ푖푛
ꢔ푂푈푇(푀푎푥)
<
[F]
ꢂ
ꢎꢏꢐ
where:
ꢀ푆푊푆푇ꢛ푅푇
ꢀ푂퐶푃(푀ꢜꢝ)
ꢞ푆푆(푀ꢜꢝ)
푉푂푈푇
is the maximum output current during startup.
is the minimum OCP operation SW current 1.35 A.
is the minimum Soft Start Time tSS (Electrical Characteristics).
is the output voltage.
Startup failure may happen if the limits from the above-mentioned are exceeded. Especially if the capacitance value is
large, over current protection may be activated by the inrush current at startup and prevented to turn on the output.
Confirm this on the actual application.
Stable transient response and the loop is dependent to COUT. Actually, characteristics vary depending on PCB layout,
arrangement of wiring, kinds of parts used and use conditions (temperature, etc.). Be sure to check stability and
responsiveness with the actual application.
5. Selection of Soft Start Capacitor
Turning the EN pin signal high activates the soft start function. This causes the output voltage to rise gradually while the
current at startup is placed under control. This allows the prevention of output voltage overshoot and inrush current. The
rise time tSS_EXT depends on the value of the capacitor connected to the SS pin. The capacitance value should be set in
the range between 4700 pF and 0.1 μF.
(
퐶
×ꢒ.ꢍ
ꢆꢆ
VEN
ꢞ푆푆_퐸푋푇
ꢞ푂퐹퐹푆퐸푇
=
) ꢌ ꢞ푂퐹퐹푆퐸푇 [s]
퐼
ꢆꢆ
VENH
(
VENL
0
퐶
×ꢒ.ꢒ4
ꢆꢆ
=
) ꢌ ꢈ50 × ꢈ0ꢖꢟ [s]
t
t
퐼
ꢆꢆ
VOUT
where:
ꢞ푆푆_퐸푋푇
is the Soft Start Time.
ꢞ푂퐹퐹푆퐸푇 is the Internal Delay Time.
ꢔ푆푆
ꢀ푆푆
0
is the Capacitor connected to the SS pin.
is the SS Charge Current 1.0 µA (Typ).
tSS_EXT
tOFFSET
With CSS = 0.01 μF
Figure 29. Soft Start Timing Chart
(
ꢞ푆푆_퐸푋푇
=
) ꢌ (
ꢒ.ꢒꢁ 휇퐹×ꢒ.ꢍ
ꢁ.ꢒ 휇ꢛ
) ꢌ ꢈ50 × ꢈ0ꢖꢟ = 0.00855 = 8.55 [ms]
ꢒ.ꢒꢁ 휇퐹×ꢒ.ꢒ4
ꢁ.ꢒ 휇ꢛ
Turning the EN pin High without connecting capacitor to the SS pin and keeping the SS pin either OPEN condition or 10
kΩ to 100 kΩ pull up condition to power source, the output rises in 1 ms (Typ).
Recommended Parts Manufacturer List
Shown below is the list of the recommended parts manufacturers for reference.
Table 2. recommended parts manufacturers
Type
Ceramic capacitor
Ceramic capacitor
Inductor
Manufacturer
Murata
TDK
URL
www.murata.com
product.tdk.com
www.coilcraft.com
www.cyntec.com
www.murata.com
www.sumida.com
product.tdk.com
www.rohm.com
Coilcraft
Cyntec
Murata
Sumida
TDK
Inductor
Inductor
Inductor
Inductor
Resistor
ROHM
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BD9S109NUX-C
Application Example 1
Table 3. Specification Example 1
Symbol
Parameter
Example Value
BD9S109NUX-C
5.0 V, 3.3 V
1.0 V
Product Name
IC
VIN
Input Voltage
Output Voltage
Soft Start Time
VOUT
tSS
IOUTMAX
Ta
1.0 ms (Typ)
1.0 A
Maximum Output Current
Operation Temperature Range
-40 °C to +125 °C
R3
VIN
VIN
PGD
SW
PGD
CIN1
VEN
VOUT
EN
L1
R100
R1
SS
COUT1
C1
GND
FB
CSS
R2
Figure 30. Measurement Circuit 1
Table 4. Parts List 1
Part Name (Series)
DFE252012PD-R68M
No
L1
Package
Parameters
0.68 μH
Type
Manufacturer
2520
2012
2012
-
Inductor
Ceramic Capacitor
Ceramic Capacitor
-
Murata
Murata
Murata
-
COUT1
CIN1
R100
R1
GCM21BR71A106KE21
GCM21BR71A106KE21
-
10 μF, X7R, 10 V
10 μF, X7R, 10 V
SHORT
1005
1005
1005
-
7.5 kΩ, 1 %, 1/16 W
30 kΩ, 1 %, 1/16 W
100 kΩ, 1 %, 1/16 W
-
MCR01MZPF7501
MCR01MZPF3002
MCR01MZPF1003
-
Chip Resistor
Chip Resistor
Chip Resistor
-
ROHM
ROHM
ROHM
-
R2
R3
CSS
C1
1005
100 pF, CH, 50 V
GCM1552C1H101JA01 Ceramic Capacitor
Murata
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BD9S109NUX-C
Characteristic Data (Application Examples 1)
VIN = VEN, Ta = 25 °C
100
VIN = 3.3 V
90
80
70
60
50
VIN = 5.0 V
40
30
20
10
0
0.00
0.25
0.50
0.75
1.00
Output Current [A]
Figure 31. Efficiency vs Output Current
Figure 32. Frequency Characteristics
(IOUT = 0.5 A)
Time: 20 μs/div
Time: 400 ns/div
VOUT: 100 mV/div
IOUT: 500 mA/div
VOUT: 20 mV/div
IOUT: 500 mA/div
Figure 33. Load Transient Response
(IOUT = 0 A ↔ 1 A)
Figure 34. Output Ripple Voltage
(IOUT = 1 A)
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BD9S109NUX-C
Application Example 2
Table 5. Specification Example 2
Symbol
Parameter
Example Value
BD9S109NUX-C
5.0 V, 3.3 V
1.2 V
Product Name
IC
VIN
Input Voltage
Output Voltage
Soft Start Time
VOUT
tSS
IOUTMAX
Ta
1.0 ms (Typ)
1.0 A
Maximum Output Current
Operation Temperature Range
-40 °C to +125 °C
R3
VIN
VIN
PGD
SW
PGD
CIN1
VEN
VOUT
EN
L1
R100
R1
SS
COUT1
C1
GND
FB
CSS
R2
Figure 35. Measurement Circuit 2
Table 6. Parts List 2
Part Name (Series)
No
L1
Package
Parameters
0.68 μH
Type
Inductor
Manufacturer
2520
2012
2012
-
DFE252012PD-R68M
GCM21BR71A106KE21
Murata
Murata
Murata
-
COUT1
CIN1
R100
R1
10 μF, X7R, 10 V
10 μF, X7R, 10 V
SHORT
Ceramic Capacitor
Ceramic Capacitor
-
GCM21BR71A106KE21
-
1005
1005
1005
-
10 kΩ, 1 %, 1/16 W
20 kΩ, 1 %, 1/16 W
100 kΩ, 1 %, 1/16 W
-
MCR01MZPF1002
MCR01MZPF2002
MCR01MZPF1003
-
Chip Resistor
Chip Resistor
Chip Resistor
-
ROHM
ROHM
ROHM
-
R2
R3
CSS
C1
1005
100 pF, CH, 50 V
GCM1552C1H101JA01 Ceramic Capacitor
Murata
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BD9S109NUX-C
Characteristic Data (Application Examples 2)
VIN = VEN, Ta = 25 °C
100
90
80
70
VIN = 3.3 V
60
50
40
30
20
10
0
VIN = 5.0 V
0.00
0.25
0.50
0.75
1.00
Output Current [A]
Figure 36. Efficiency vs Output Current
Figure 37. Frequency Characteristics
(IOUT = 0.5 A)
Time: 20 μs/div
Time: 400 ns/div
VOUT: 100 mV/div
VOUT: 20 mV/div
IOUT: 500 mA/div
IOUT: 500 mA/div
Figure 38. Load Transient Response
(IOUT = 0 A ↔ 1 A)
Figure 39. Output Ripple Voltage
(IOUT = 1 A)
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BD9S109NUX-C
Application Example 3
Table 7. Specification Example 3
Symbol
Parameter
Example Value
BD9S109NUX-C
5.0 V, 3.3 V
1.5 V
Product Name
IC
VIN
Input Voltage
Output Voltage
Soft Start Time
VOUT
tSS
IOUTMAX
Ta
1.0 ms (Typ)
1.0 A
Maximum Output Current
Operation Temperature Range
-40 °C to +125 °C
R3
VIN
VIN
PGD
SW
PGD
CIN1
VEN
VOUT
EN
L1
R100
R1
SS
COUT1
C1
GND
FB
CSS
R2
Figure 40. Measurement Circuit 3
Table 8. Parts List 3
Part Name (Series)
No
L1
Package
Parameters
0.68 μH
Type
Inductor
Manufacturer
Murata
Murata
Murata
-
DFE252012PD-R68M
GCM21BR71A106KE21
2520
2012
2012
-
COUT1
CIN1
R100
R1
10 μF, X7R, 10 V
10 μF, X7R, 10 V
SHORT
Ceramic Capacitor
Ceramic Capacitor
-
GCM21BR71A106KE21
-
1005
1005
1005
-
16 kΩ, 1 %, 1/16 W
18 kΩ, 1 %, 1/16 W
100 kΩ, 1 %, 1/16 W
-
MCR01MZPF1602
MCR01MZPF1802
MCR01MZPF1003
-
Chip Resistor
Chip Resistor
Chip Resistor
-
ROHM
ROHM
ROHM
-
R2
R3
CSS
C1
1005
100 pF, CH, 50 V
GCM1552C1H101JA01 Ceramic Capacitor
Murata
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BD9S109NUX-C
Characteristic Data (Application Examples 3)
VIN = VEN, Ta = 25 °C
100
90
80
70
VIN = 3.3 V
60
VIN = 5.0 V
50
40
30
20
10
0
0.00
0.25
0.50
0.75
1.00
Output Current [A]
Figure 41. Efficiency vs Output Current
Figure 42. Frequency Characteristics
(IOUT = 0.5 A)
Time: 20 μs/div
Time: 400 ns/div
VOUT: 100 mV/div
IOUT: 500 mA/div
VOUT: 20 mV/div
IOUT: 500 mA/div
Figure 43. Load Transient Response
(IOUT = 0 A ↔ 1 A)
Figure 44. Output Ripple Voltage
(IOUT = 1 A)
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BD9S109NUX-C
Application Example 4
Table 9. Specification Example 4
Symbol
Parameter
Example Value
BD9S109NUX-C
5.0 V, 3.3 V
1.8 V
Product Name
IC
VIN
Input Voltage
Output Voltage
Soft Start Time
VOUT
tSS
IOUTMAX
Ta
1.0 ms (Typ)
1.0 A
Maximum Output Current
Operation Temperature Range
-40 °C to +125 °C
R3
VIN
VIN
PGD
PGD
CIN1
VEN
VOUT
EN
SS
SW
L1
R100
R1
COUT1
C1
GND
FB
CSS
R2
Figure 45. Measurement Circuit 4
Table 10. Parts List 4
Part Name (Series)
No
L1
Package
2520
2012
2012
-
Parameters
1.0 μH
Type
Inductor
Manufacturer
TFM252012ALMA1R0M
TDK
Murata
Murata
-
COUT1
CIN1
R100
R1
GCM21BR71A106KE21
GCM21BR71A106KE21
-
10 μF, X7R, 10 V
10 μF, X7R, 10 V
SHORT
Ceramic Capacitor
Ceramic Capacitor
-
1005
1005
1005
-
30 kΩ, 1 %, 1/16 W
24 kΩ, 1 %, 1/16 W
100 kΩ, 1 %, 1/16 W
-
MCR01MZPF3002
MCR01MZPF2402
MCR01MZPF1003
-
Chip Resistor
Chip Resistor
Chip Resistor
-
ROHM
ROHM
ROHM
-
R2
R3
CSS
C1
1005
100 pF, CH, 50 V
GCM1552C1H101JA01 Ceramic Capacitor
Murata
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BD9S109NUX-C
Characteristic Data (Application Examples 4)
VIN = VEN, Ta = 25 °C
100
90
80
70
VIN = 3.3 V
60
VIN = 5.0 V
50
40
30
20
10
0
0.00
0.25
0.50
0.75
1.00
Output Current [A]
Figure 46. Efficiency vs Output Current
Figure 47. Frequency Characteristics
(IOUT = 0.5 A)
Time: 20 μs/div
Time: 400 ns/div
VOUT: 100 mV/div
IOUT: 500 mA/div
VOUT: 20 mV/div
IOUT: 500 mA/div
Figure 48. Load Transient Response
(IOUT = 0 A ↔ 1 A)
Figure 49. Output Ripple Voltage
(IOUT = 1 A)
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BD9S109NUX-C
Application Example 5
Table 11. Specification Example 5
Symbol
Parameter
Example Value
BD9S109NUX-C
5.0 V
Product Name
IC
VIN
Input Voltage
Output Voltage
Soft Start Time
VOUT
tSS
IOUTMAX
Ta
3.3 V
1.0 ms (Typ)
1.0 A
Maximum Output Current
Operation Temperature Range
-40 °C to +125 °C
R3
VIN
VIN
PGD
SW
PGD
CIN1
VEN
VOUT
EN
L1
R100
R1
SS
COUT1
C1
GND
FB
CSS
R2
Figure 50. Measurement Circuit 5
Table 12. Parts List 5
Part Name (Series)
No
L1
Package
2520
2012
2012
-
Parameters
1.0 μH
Type
Inductor
Manufacturer
TFM252012ALMA1R0M
TDK
Murata
Murata
-
COUT1
CIN1
R100
R1
GCM21BR71A106KE21
GCM21BR71A106KE21
-
10 μF, X7R, 10 V
10 μF, X7R, 10 V
SHORT
Ceramic Capacitor
Ceramic Capacitor
-
1005
1005
1005
-
75 kΩ, 1 %, 1/16 W
24 kΩ, 1 %, 1/16 W
100 kΩ, 1 %, 1/16 W
-
MCR01MZPF7502
MCR01MZPF2402
MCR01MZPF1003
-
Chip Resistor
Chip Resistor
Chip Resistor
-
ROHM
ROHM
ROHM
-
R2
R3
CSS
C1
1005
100 pF, CH, 50 V
GCM1552C1H101JA01 Ceramic Capacitor
Murata
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BD9S109NUX-C
Characteristic Data (Application Examples 5)
VIN = VEN, Ta = 25 °C
100
90
80
70
VIN = 5.0 V
60
50
40
30
20
10
0
0.00
0.25
0.50
0.75
1.00
Output Current [A]
Figure 51. Efficiency vs Output Current
Figure 52. Frequency Characteristics
(IOUT = 0.5 A)
Time: 20 μs/div
Time: 400 ns/div
VOUT: 100 mV/div
IOUT: 500 mA/div
VOUT: 20 mV/div
IOUT: 500 mA/div
Figure 53. Load Transient Response
(IOUT = 0 A ↔ 1 A)
Figure 54. Output Ripple Voltage
(IOUT = 1 A)
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BD9S109NUX-C
PCB Layout Design
PCB layout design for DC/DC converter is very important. Appropriate layout can avoid various problems concerning power
supply circuit. Figure 55 to 57 show the current path in a buck DC/DC converter circuit. The Loop 1 in Figure 55 is a current
path when High Side Switch is ON and Low Side Switch is OFF, the Loop 2 in Figure 56 is when High Side Switch is OFF
and Low Side Switch is ON. The thick line in Figure 57 shows the difference between Loop1 and Loop2. The current in thick
line change sharply each time the switching element High Side and Low Side FET change from OFF to ON, and vice versa.
These sharp changes induce a waveform with harmonics in this loop. Therefore, the loop area of thick line that is consisted
by input capacitor and IC should be as small as possible to minimize noise. For more details, refer to application note of
switching regulator series “PCB Layout Techniques of Buck Converter”.
Loop1
VIN
VOUT
GND
VOUT
L
High Side Switch
CIN
COUT
Low Side Switch
GND
Figure 55. Current Path when High Side Switch = ON, Low Side Switch = OFF
VIN
L
High Side Switch
CIN
COUT
Loop2
Low Side Switch
GND
GND
Figure 56. Current Path when High Side Switch = OFF, Low Side Switch = ON
VIN
VOUT
L
CIN
COUT
High Side FET
Low Side FET
GND
GND
Figure 57. Difference of Current and Critical Area in Layout
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BD9S109NUX-C
PCB Layout Design – continued
When designing the PCB layout, Pay extra attention to the following points.
• Connect the input capacitor CIN as close as possible to the VIN pin on the same plane as the IC.
• Switching nodes such as SW are susceptible to noise due to AC coupling with other nodes. Route the inductor pattern
as thick and as short as possible.
• R1 and R2 shall be located as close as possible to the FB pin and the wiring between R1 and R2 to the FB pin shall be as
short as possible.
• Provide line connected to FB far from the SW nodes.
• R100 is provided for the measurement of feedback frequency characteristics (optional). By inserting a resistor into R100, it
is possible to measure the frequency characteristics of feedback (phase margin) using FRA etc. R100 is short-circuited
for normal use.
R2
R1
Css
IC
L1
CIN
COUT
Example of Evaluation Board Layout (Top View)
Example of Evaluation Board Layout (Bottom View)
Figure 58. Example of Evaluation Board Layout
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BD9S109NUX-C
Power Dissipation
For thermal design, be sure to operate the IC within the following conditions.
(Since the temperatures described hereunder are all guaranteed temperatures, take margin into account.)
1. The ambient temperature Ta is to be 125 °C or less.
2. The chip junction temperature Tj is to be 150 °C or less.
The chip junction temperature Tj can be considered in the following two patterns:
1. To obtain Tj from the package surface center temperature Tt in actual use
ꢠ푗 = ꢠꢞ ꢌ 휓퐽푇 × ꢡ [°C]
2. To obtain Tj from the ambient temperature Ta
ꢠ푗 = ꢠꢢ ꢌ 휃퐽ꢛ × ꢡ [°C]
where:
휓퐽푇 is junction to top characterization parameter (Thermal Resistance).
휃퐽ꢛ is junction to ambient (Thermal Resistance).
The heat loss W of the IC can be obtained by the formula shown below:
푉푂푈푇
푉푂푈푇
ꢓ
ꢡ = ꢋ푂푁퐻 × ꢀ푂푈푇
×
ꢌ ꢋ푂푁퐿 × ꢀ푂푈푇ꢓ ꢣꢈ −
ꢤ
푉
퐼푁
푉
퐼푁
ꢁ
(
)
ꢌ푉퐼푁 × ꢀ퐶퐶 ꢌ × ꢞ푟 ꢌ ꢞ푓 × 푉퐼푁 × ꢀ푂푈푇 × 푓
[W]
푆푊
ꢓ
where:
ꢋ푂푁퐻
ꢋ푂푁퐿
ꢀ푂푈푇
is the High Side FET ON Resistance (Electrical Characteristics) [Ω].
is the Low Side FET ON Resistance (Electrical Characteristics) [Ω].
is the Output Current [A].
푉푂푈푇
is the Output Voltage [V].
푉
퐼푁
is the Input Voltage [V].
ꢀ퐶퐶
ꢞ푟
ꢞ푓
is the Circuit Current (Electrical Characteristics) [A].
is the Switching Rise Time [s] (Typ:3 ns).
is the Switching Fall Time [s] (Typ:3 ns).
푓
푆푊
is the Switching Frequency (Electrical Characteristics) [Hz].
tr
tf
(3 ns)
(3 ns)
VIN
ꢓ
1. ꢋ푂푁퐻 × ꢀ푂푈푇
1
ꢓ
VSW
2. ꢋ푂푁퐿 × ꢀ푂푈푇
3. ꢁ × (ꢞ푟 ꢌ ꢞ푓) × 푉 × ꢀ푂푈푇 × 푓
퐼푁
푆푊
ꢓ
GND
3
2
1
fsw
Figure 59. SW Waveform
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BD9S109NUX-C
I/O Equivalence Circuits(Note 1)
1. 2. SW
3. SS
VIN
VIN
40 kΩ
SW
SS
GND
50 Ω
100 kΩ
GND
GND
GND
GND
4. FB
5. EN
20 kΩ
FB
100 kΩ
EN
10 kΩ
10 kΩ
10 kΩ
GND
150 kΩ
850 kΩ
GND
10 kΩ
GND GND
GND
6. PGD
PGD
50 Ω
GND
GND
(Note 1) Resistance value is Typical.
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BD9S109NUX-C
Operational Notes
1.
2.
3.
Reverse Connection of Power Supply
Connecting the power supply in reverse polarity can damage the IC. Take precautions against reverse polarity when
connecting the power supply, such as mounting an external diode between the power supply and the IC’s power supply
pins.
Power Supply Lines
Design the PCB layout pattern to provide low impedance supply lines. Furthermore, connect a capacitor to ground at
all power supply pins. Consider the effect of temperature and aging on the capacitance value when using electrolytic
capacitors.
Ground Voltage
Ensure that no pins are at a voltage below that of the ground pin at any time, even during transient condition. However,
pins that drive inductive loads (e.g. motor driver outputs, DC-DC converter outputs) may inevitably go below ground
due to back EMF or electromotive force. In such cases, the user should make sure that such voltages going below
ground will not cause the IC and the system to malfunction by examining carefully all relevant factors and conditions
such as motor characteristics, supply voltage, operating frequency and PCB wiring to name a few.
4.
Ground Wiring Pattern
When using both small-signal and large-current ground traces, the two ground traces should be routed separately but
connected to a single ground at the reference point of the application board to avoid fluctuations in the small-signal
ground caused by large currents. Also ensure that the ground traces of external components do not cause variations
on the ground voltage. The ground lines must be as short and thick as possible to reduce line impedance.
5.
6.
Recommended Operating Conditions
The function and operation of the IC are guaranteed within the range specified by the recommended operating
conditions. The characteristic values are guaranteed only under the conditions of each item specified by the electrical
characteristics.
Inrush Current
When power is first supplied to the IC, it is possible that the internal logic may be unstable and inrush current may flow
instantaneously due to the internal powering sequence and delays, especially if the IC has more than one power supply.
Therefore, give special consideration to power coupling capacitance, power wiring, width of ground wiring, and routing
of connections.
7.
Testing on Application Boards
When testing the IC on an application board, connecting a capacitor directly to a low-impedance output pin may subject
the IC to stress. Always discharge capacitors completely after each process or step. The IC’s power supply should
always be turned off completely before connecting or removing it from the test setup during the inspection process. To
prevent damage from static discharge, ground the IC during assembly and use similar precautions during transport and
storage.
8.
9.
Inter-pin Short and Mounting Errors
Ensure that the direction and position are correct when mounting the IC on the PCB. Incorrect mounting may result in
damaging the IC. Avoid nearby pins being shorted to each other especially to ground, power supply and output pin.
Inter-pin shorts could be due to many reasons such as metal particles, water droplets (in very humid environment) and
unintentional solder bridge deposited in between pins during assembly to name a few.
Unused Input Pins
Input pins of an IC are often connected to the gate of a MOS transistor. The gate has extremely high impedance and
extremely low capacitance. If left unconnected, the electric field from the outside can easily charge it. The small charge
acquired in this way is enough to produce a significant effect on the conduction through the transistor and cause
unexpected operation of the IC. So unless otherwise specified, unused input pins should be connected to the power
supply or ground line.
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BD9S109NUX-C
Operational Notes – continued
10. Regarding the Input Pin of the IC
This monolithic IC contains P+ isolation and P substrate layers between adjacent elements in order to keep them
isolated. P-N junctions are formed at the intersection of the P layers with the N layers of other elements, creating a
parasitic diode or transistor. For example (refer to figure below):
When GND > Pin A and GND > Pin B, the P-N junction operates as a parasitic diode.
When GND > Pin B, the P-N junction operates as a parasitic transistor.
Parasitic diodes inevitably occur in the structure of the IC. The operation of parasitic diodes can result in mutual
interference among circuits, operational faults, or physical damage. Therefore, conditions that cause these diodes to
operate, such as applying a voltage lower than the GND voltage to an input pin (and thus to the P substrate) should be
avoided.
Resistor
Transistor (NPN)
Pin A
Pin B
Pin B
B
E
C
Pin A
B
C
E
P
P+
P+
N
P+
P
P+
N
N
N
N
N
N
N
Parasitic
Elements
Parasitic
Elements
P Substrate
GND GND
P Substrate
GND
GND
Parasitic
Elements
Parasitic
Elements
N Region
close-by
Figure 60. Example of Monolithic IC Structure
11. Ceramic Capacitor
When using a ceramic capacitor, determine a capacitance value considering the change of capacitance with
temperature and the decrease in nominal capacitance due to DC bias and others.
12. Thermal Shutdown Circuit (TSD)
This IC has a built-in thermal shutdown circuit that prevents heat damage to the IC. Normal operation should always
be within the IC’s maximum junction temperature rating. If however the rating is exceeded for a continued period, the
junction temperature (Tj) will rise which will activate the TSD circuit that will turn OFF power output pins. When the Tj
falls below the TSD threshold, the circuits are automatically restored to normal operation.
Note that the TSD circuit operates in a situation that exceeds the absolute maximum ratings and therefore, under no
circumstances, should the TSD circuit be used in a set design or for any purpose other than protecting the IC from heat
damage.
13. Over Current Protection Circuit (OCP)
This IC incorporates an integrated overcurrent protection circuit that is activated when the load is shorted. This
protection circuit is effective in preventing damage due to sudden and unexpected incidents. However, the IC should
not be used in applications characterized by continuous operation or transitioning of the protection circuit.
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BD9S109NUX-C
Ordering Information
B D 9 S 1
0
9 N U X -
C E 2
Package
VSON008X2020
Product class
C: for Automotive applications
Packaging and forming specification
E2: Embossed tape and reel
Marking Diagram
VSON008X2020 (TOP VIEW)
Part Number Marking
D 9 S
1 0 9
LOT Number
Pin 1 Mark
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BD9S109NUX-C
Physical Dimension and Packing Information
Package Name
VSON008X2020
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BD9S109NUX-C
Revision History
Date
Revision
001
Changes
06.Apr.2022
New Release
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Notice
Precaution on using ROHM Products
(Note 1)
1. If you intend to use our Products in devices requiring extremely high reliability (such as medical equipment
,
aircraft/spacecraft, nuclear power controllers, etc.) and whose malfunction or failure may cause loss of human life,
bodily injury or serious damage to property (“Specific Applications”), please consult with the ROHM sales
representative in advance. Unless otherwise agreed in writing by ROHM in advance, ROHM shall not be in any way
responsible or liable for any damages, expenses or losses incurred by you or third parties arising from the use of any
ROHM’s Products for Specific Applications.
(Note1) Medical Equipment Classification of the Specific Applications
JAPAN
USA
EU
CHINA
CLASSⅢ
CLASSⅣ
CLASSⅡb
CLASSⅢ
CLASSⅢ
CLASSⅢ
2. ROHM designs and manufactures its Products subject to strict quality control system. However, semiconductor
products can fail or malfunction at a certain rate. Please be sure to implement, at your own responsibilities, adequate
safety measures including but not limited to fail-safe design against the physical injury, damage to any property, which
a failure or malfunction of our Products may cause. The following are examples of safety measures:
[a] Installation of protection circuits or other protective devices to improve system safety
[b] Installation of redundant circuits to reduce the impact of single or multiple circuit failure
3. Our Products are not designed under any special or extraordinary environments or conditions, as exemplified below.
Accordingly, ROHM shall not be in any way responsible or liable for any damages, expenses or losses arising from the
use of any ROHM’s Products under any special or extraordinary environments or conditions. If you intend to use our
Products under any special or extraordinary environments or conditions (as exemplified below), your independent
verification and confirmation of product performance, reliability, etc, prior to use, must be necessary:
[a] Use of our Products in any types of liquid, including water, oils, chemicals, and organic solvents
[b] Use of our Products outdoors or in places where the Products are exposed to direct sunlight or dust
[c] Use of our Products in places where the Products are exposed to sea wind or corrosive gases, including Cl2,
H2S, NH3, SO2, and NO2
[d] Use of our Products in places where the Products are exposed to static electricity or electromagnetic waves
[e] Use of our Products in proximity to heat-producing components, plastic cords, or other flammable items
[f] Sealing or coating our Products with resin or other coating materials
[g] Use of our Products without cleaning residue of flux (Exclude cases where no-clean type fluxes is used.
However, recommend sufficiently about the residue.); or Washing our Products by using water or water-soluble
cleaning agents for cleaning residue after soldering
[h] Use of the Products in places subject to dew condensation
4. The Products are not subject to radiation-proof design.
5. Please verify and confirm characteristics of the final or mounted products in using the Products.
6. In particular, if a transient load (a large amount of load applied in a short period of time, such as pulse, is applied,
confirmation of performance characteristics after on-board mounting is strongly recommended. Avoid applying power
exceeding normal rated power; exceeding the power rating under steady-state loading condition may negatively affect
product performance and reliability.
7. De-rate Power Dissipation depending on ambient temperature. When used in sealed area, confirm that it is the use in
the range that does not exceed the maximum junction temperature.
8. Confirm that operation temperature is within the specified range described in the product specification.
9. ROHM shall not be in any way responsible or liable for failure induced under deviant condition from what is defined in
this document.
Precaution for Mounting / Circuit board design
1. When a highly active halogenous (chlorine, bromine, etc.) flux is used, the residue of flux may negatively affect product
performance and reliability.
2. In principle, the reflow soldering method must be used on a surface-mount products, the flow soldering method must
be used on a through hole mount products. If the flow soldering method is preferred on a surface-mount products,
please consult with the ROHM representative in advance.
For details, please refer to ROHM Mounting specification
Notice-PAA-E
Rev.004
© 2015 ROHM Co., Ltd. All rights reserved.
Precautions Regarding Application Examples and External Circuits
1. If change is made to the constant of an external circuit, please allow a sufficient margin considering variations of the
characteristics of the Products and external components, including transient characteristics, as well as static
characteristics.
2. You agree that application notes, reference designs, and associated data and information contained in this document
are presented only as guidance for Products use. Therefore, in case you use such information, you are solely
responsible for it and you must exercise your own independent verification and judgment in the use of such information
contained in this document. ROHM shall not be in any way responsible or liable for any damages, expenses or losses
incurred by you or third parties arising from the use of such information.
Precaution for Electrostatic
This Product is electrostatic sensitive product, which may be damaged due to electrostatic discharge. Please take proper
caution in your manufacturing process and storage so that voltage exceeding the Products maximum rating will not be
applied to Products. Please take special care under dry condition (e.g. Grounding of human body / equipment / solder iron,
isolation from charged objects, setting of Ionizer, friction prevention and temperature / humidity control).
Precaution for Storage / Transportation
1. Product performance and soldered connections may deteriorate if the Products are stored in the places where:
[a] the Products are exposed to sea winds or corrosive gases, including Cl2, H2S, NH3, SO2, and NO2
[b] the temperature or humidity exceeds those recommended by ROHM
[c] the Products are exposed to direct sunshine or condensation
[d] the Products are exposed to high Electrostatic
2. Even under ROHM recommended storage condition, solderability of products out of recommended storage time period
may be degraded. It is strongly recommended to confirm solderability before using Products of which storage time is
exceeding the recommended storage time period.
3. Store / transport cartons in the correct direction, which is indicated on a carton with a symbol. Otherwise bent leads
may occur due to excessive stress applied when dropping of a carton.
4. Use Products within the specified time after opening a humidity barrier bag. Baking is required before using Products of
which storage time is exceeding the recommended storage time period.
Precaution for Product Label
A two-dimensional barcode printed on ROHM Products label is for ROHM’s internal use only.
Precaution for Disposition
When disposing Products please dispose them properly using an authorized industry waste company.
Precaution for Foreign Exchange and Foreign Trade act
Since concerned goods might be fallen under listed items of export control prescribed by Foreign exchange and Foreign
trade act, please consult with ROHM in case of export.
Precaution Regarding Intellectual Property Rights
1. All information and data including but not limited to application example contained in this document is for reference
only. ROHM does not warrant that foregoing information or data will not infringe any intellectual property rights or any
other rights of any third party regarding such information or data.
2. ROHM shall not have any obligations where the claims, actions or demands arising from the combination of the
Products with other articles such as components, circuits, systems or external equipment (including software).
3. No license, expressly or implied, is granted hereby under any intellectual property rights or other rights of ROHM or any
third parties with respect to the Products or the information contained in this document. Provided, however, that ROHM
will not assert its intellectual property rights or other rights against you or your customers to the extent necessary to
manufacture or sell products containing the Products, subject to the terms and conditions herein.
Other Precaution
1. This document may not be reprinted or reproduced, in whole or in part, without prior written consent of ROHM.
2. The Products may not be disassembled, converted, modified, reproduced or otherwise changed without prior written
consent of ROHM.
3. In no event shall you use in any way whatsoever the Products and the related technical information contained in the
Products or this document for any military purposes, including but not limited to, the development of mass-destruction
weapons.
4. The proper names of companies or products described in this document are trademarks or registered trademarks of
ROHM, its affiliated companies or third parties.
Notice-PAA-E
Rev.004
© 2015 ROHM Co., Ltd. All rights reserved.
Daattaasshheeeett
General Precaution
1. Before you use our Products, you are requested to carefully read this document and fully understand its contents.
ROHM shall not be in any way responsible or liable for failure, malfunction or accident arising from the use of any
ROHM’s Products against warning, caution or note contained in this document.
2. All information contained in this document is current as of the issuing date and subject to change without any prior
notice. Before purchasing or using ROHM’s Products, please confirm the latest information with a ROHM sales
representative.
3. The information contained in this document is provided on an “as is” basis and ROHM does not warrant that all
information contained in this document is accurate and/or error-free. ROHM shall not be in any way responsible or
liable for any damages, expenses or losses incurred by you or third parties resulting from inaccuracy or errors of or
concerning such information.
Notice – WE
Rev.001
© 2015 ROHM Co., Ltd. All rights reserved.
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ROHM
BD9S209NUX-C (新产品)
BD9S209NUX-C是一款内置低导通电阻功率MOSFET的同步整流降压型DC-DC转换器。该产品可输出最大2A的电流,其开关频率高达2.2MHz,因此允许使用小型电感器。该产品采用电流模式控制,具有高速瞬态响应性能。另外,还内置有相位补偿电路,仅用很少的外置元器件即可构建应用产品。
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BD9S231NUX-C
BD9S231NUX-C是一款内置低导通电阻功率MOSFET的同步整流降压型DC-DC转换器。可输出最大2A的电流。其开关频率高达2.2MHz,因此允许使用小型电感器。该产品采用电流模式控制,具有高速瞬态响应性能。另外,还内置有相位补偿电路,仅用很少的外置元器件即可构建应用产品。
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BD9S300MUF-C
BD9S300MUF-C是内置低导通电阻的功率MOSFET的同步整流降压型DC/DC转换器。最大可输出3A的电流。凭借SLLM™控制,实现轻负载状态的良好效率特性,适用于降低设备的待机功耗。具有2.2MHz高速开关频率,适用于小型电感。具有基于电流模式控制的高速瞬态响应性能,可轻松设定相位补偿。还可与外部脉冲同步。8-channel power tree Reference DesignFor automotive ADAS and Info-Display
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BD9S400MUF-C
BD9S400MUF-C是内置低导通电阻的功率MOSFET的同步整流降压型DC/DC转换器。最大可输出4A的电流。凭借SLLM™控制,实现轻负载状态的良好效率特性,适用于降低设备的待机功耗。具有2.2MHz高速开关频率,适用于小型电感。具有基于电流模式控制的高速瞬态响应性能,可轻松设定相位补偿。还可与外部脉冲同步。8-channel power tree Reference DesignFor automotive ADAS and Info-Display
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BD9S402MUF-C (新产品)
BD9S402MUF-C是一款内置低导通电阻功率MOSFET的同步整流降压型DC-DC转换器。可输出最大4A的电流。其开关频率高达2.2MHz,因此允许使用小型电感器。该产品采用电流模式控制,具有高速瞬态响应性能。另外,还内置有相位补偿电路,仅用很少的外置元器件即可构建应用产品。
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BD9SD11NUX-C
BD9SD11NUX-C是内置低导通电阻的功率MOSFET的同步整流降压型DC/DC转换器。最大可输出600mA的电流。具有2.2MHz高速开关频率,适用于小型电感。具有基于电流模式控制的高速瞬态响应性能。内置输出电压设定为1.15V的反馈电阻和相位补偿电路,可以用较少的外接零部件构建应用。
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BD9V100MUF-C
BD9V100MUF-C是一种内置高电压额定功率MOSFET的电流型同步降压转换器。通过Nano Pulse Control技术,宽范围输入16V~60V,极短的最小脉冲宽度小于20ns,可在2.1MHz的工作频率下从48V电池直接转换为3.3V。
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BD9V101MUF-LB
本产品是面向工业设备市场的产品,保证可长期稳定供货。是适合这些用途的产品。BD9V101MUF-LB 是内置高耐压POWER MOSFET的同步整流降压DC/DC转换器。16V~60V的大输入范围适用于工业设备等所有应用。通过Nano Pulse Control®,可输出20ns的最小SW ON 时间,因此即使是2.1MHz动作,也可通过1个IC实现从60V电源转换为3.3V微控制器的电压转换(60V→3.3V)。
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