ES6U41 [ROHM]
2.5V Drive Nch+SBD MOSFET; 2.5V驱动N沟道+ SBD MOSFET
| 型号： | ES6U41 |
| 厂家： | 
ROHM |
| 描述： | 2.5V Drive Nch+SBD MOSFET |
| 文件： | 总6页 (文件大小：177K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ES6U41
Transistors
2.5V Drive Nch+SBD MOSFET
ES6U41
zStructure
zDimensions (Unit : mm)
Silicon N-channel MOSFET /
Schottky barrier diode
WEMT6
(6) (5) (4)
zFeatures
1) Nch MOSFET and schottky barrier diode
are put in WEMT6 package.
(1) (2) (3)
2) High-speed switching, Low On-resistance.
3) Low voltage drive (2.5V drive).
4) Built-in Low VF schottky barrier diode.
Abbreviated symbol : U41
zApplications
Switching
zPackage specifications
zInner circuit
(6)
(4)
(5)
Package
Taping
T2R
Type
Code
Basic ordering unit (pieces)
8000
ES6U41
∗2
(1)Gate
(2)Source
(3)Anode
(4)Cathode
(5)Drain
∗1
(1)
(2)
(3)
∗1 ESD protection diode
∗2 Body diode
(6)Drain
zAbsolute maximum ratings (Ta=25°C)
<MOSFET>
Parameter
Drain-source voltage
Symbol
VDSS
VGSS
ID
Limits
30
Unit
V
12
Gate-source voltage
V
Continuous
Pulsed
1.5
A
Drain current
∗1
IDP
IS
6.0
A
Source current
(Body diode)
Continuous
Pulsed
0.75
6.0
A
∗1
∗2
ISP
Tch
PD
A
°C
Channel temperature
Power dissipation
150
0.7
W / ELEMENT
∗1 Pw≤10µs, Duty cycle≤1%
∗2 Mounted on a ceramic board
<Di>
Parameter
Symbol
VRM
VR
Limits
25
Unit
Repetitive peak reverse voltage
Reverse voltage
V
20
V
0.5
2.0
IF
Forward current
A
∗1
IFSM
Forward current surge peak
Junction temperature
Power dissipation
A
°C
Tj
PD
150
0.5
∗2
W / ELEMENT
∗1 60Hz 1cycle
∗2 Mounted on ceramic board
1/5
ES6U41
Transistors
<MOSFET and Di>
Parameter
Symbol
Limits
0.8
Unit
W / TOTAL
°C
∗
Power dissipation
PD
Range of storage temperature
Mounted on a ceramic board
Tstg
−55 to +150
∗
zElectrical characteristics (Ta=25°C)
<MOSFET>
Parameter
Symbol Min. Typ. Max.
Conditions
Unit
Gate-source leakage
IGSS
−
−
−
−
10
−
1
µA VGS= 12V, VDS=0V
Drain-source breakdown voltage V(BR) DSS 30
V
µA
V
ID= 1mA, VGS=0V
Zero gate voltage drain current
Gate threshold voltage
IDSS
−
0.5
−
−
−
V
DS= 30V, VGS=0V
DS= 10V, ID= 1mA
VGS (th)
−
1.5
240
250
340
−
−
−
−
−
−
−
−
2.2
V
170
180
240
−
80
14
12
7
mΩ ID= 1.5A, VGS= 4.5V
mΩ ID= 1.5A, VGS= 4V
mΩ ID= 1.5A, VGS= 2.5V
Static drain-source on-state
resistance
∗
RDS (on)
∗
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Yfs
Ciss
1.5
S
V
V
V
DS= 10V, ID= 1.5A
−
−
−
−
−
−
−
−
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
DS= 10V
Coss
Crss
td (on)
GS=0V
f=1MHz
∗
∗
∗
V
DD 15V
= 0.75A
GS= 4.5V
I
D
t
r
9
V
R
R
Turn-off delay time
Fall time
td (off)
15
6
L
20Ω
= 10Ω
∗
∗
tf
G
Total gate charge
Gate-source charge
Qg
1.6
0.5
0.3
VDD 15V, VGS= 4.5V
ID= 1.5A, RL 10Ω
RG= 10Ω
∗
∗
Qgs
Qgd
−
−
−
−
Gate-drain charge
∗Pulsed
<Body diode characteristics (Source-drain)>
Parameter Symbol Min. Typ. Max.
Forward voltage 1.2
Unit
V
Conditions
V
SD
−
−
IS= 0.75A, VGS=0V
<Di>
Parameter
Symbol Min. Typ. Max.
Conditions
IF= 0.1A
Unit
V
−
−
−
−
−
−
0.36
0.52
100
Forward voltage
Reverse current
VF
V
IF= 0.5A
I
R
µA
V = 20V
R
2/5
ES6U41
Transistors
zElectrical characteristics curves
<MOSFET>
2
2
1.5
1
10
1
VGS= 10V
Ta=25°C
Pulsed
VDS= 10V
Pulsed
VGS= 10V
VGS= 2.5V
VGS= 2.2V
VGS= 4.5V
V
GS= 4.0V
VGS= 2.5V
GS= 2.2V
1.5
1
VGS= 1.8V
Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= - 25°C
V
VGS= 1.8V
VGS= 1.7V
VGS= 1.6V
0.1
VGS= 1.7V
VGS= 1.6V
0.5
0
0.5
0
0.01
0.001
Ta=25°C
Pulsed
VGS= 1.5V
8
0
0.2
0.4
0.6
0.8
1
0
2
4
6
10
0.5
1.0
1.5
2.0
DRAIN-SOURCE VOLTAGE : VDS[V]
DRAIN-SOURCE VOLTAGE : VDS[V]
GATE-SOURCE VOLTAGE : VGS[V]
Fig.3 Typical Transfer Characteristics
Fig.1 Typical Output Characteristics(
)
Fig.2 Typical Output Characteristics( )
Ⅱ
Ⅰ
1000
100
10
1000
100
10
1000
100
10
Ta=25°C
Pulsed
VGS= 4.0V
Pulsed
VGS= 4.5V
Pulsed
VGS= 2.5V
VGS= 4.0V
VGS= 4.5V
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
0.01
0.1
1
10
0.01
0.1
1
10
0.01
0.1
1
10
DRAIN-CURRENT : ID[A]
DRAIN-CURRENT : ID[A]
DRAIN-CURRENT : ID[A]
Fig.6 Static Drain-Source On-State
Resistance vs. Drain Current(
Fig.4 Static Drain-Source On-State
Resistance vs. Drain Current(
Fig.5 Static Drain-Source On-State
)
Ⅲ
)
Ⅰ
Resistance vs. Drain Current( )
Ⅱ
1000
100
10
10
1
10
VDS= 10V
Pulsed
VGS= 2.5V
Pulsed
VGS=0V
Pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
1
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
0.1
Ta= -25°C
Ta=25°C
Ta=75°C
Ta=125°C
0.1
0.01
0.01
0.1
1
10
0.01
0.1
1
10
0.2
0.4
0.6
0.8
1.0
1.2
DRAIN-CURRENT : ID[A]
DRAIN-CURRENT : ID[A]
SOURCE-DRAIN VOLTAGE : VSD [V]
Fig.7 Static Drain-Source On-State
Resistance vs. Drain Current(
Fig.8 Forward Transfer Admittance
vs. Drain Current
Fig.9 Reverse Drain Current
vs. Sourse-Drain Voltage
)
Ⅳ
3/5
ES6U41
Transistors
1000
800
600
400
200
0
1000
100
10
5
4
3
2
1
0
Ta=25°C
Pulsed
Ta=25°C
DD= 15V
V
VGS= 4.5V
RG=10Ω
Pulsed
td(off)
ID= 1.50A
ID= 0.75A
tf
Ta=25°C
V
DD= 15V
ID= 1.5A
RG=10Ω
Pulsed
tr
td(on)
1
0
2
4
6
8
10
0.01
0.1
1
10
0
0.5
1
1.5
2
GATE-SOURCE VOLTAGE : VGS[V]
Fig.10 Static Drain-Source On-State
TOTAL GATE CHARGE : Qg [nC]
Fig.12 Dynamic Input Characteristics
DRAIN-CURRENT : ID[A]
Fig.11 Switching Characteristics
Resistance vs. Gate Source Voltage
1000
100
10
Ciss
Crss
Coss
Ta=25°C
f=1MHz
V
GS=0V
1
0.01
0.1
1
10
100
DRAIN-SOURCE VOLTAGE : VDS[V]
Fig.13 Typical Capacitance
vs. Drain-Source Voltage
<Di>
100000
1
pulsed
pulsed
10000
1000
100
10
Ta = 75
Ta = 25
℃
℃
0.1
0.01
Ta = 75
Ta = 25
℃
℃
Ta= - 25
℃
Ta= - 25
℃
1
0.1
0.01
0.001
0
5
10
15
20
25
0
0.1 0.2 0.3 0.4 0.5 0.6
FORWARD VOLTAGE : V [V]
Fig.2 Forward Current vs. Forward Voltage
REVERSE VOLTAGE : V
R[V]
F
Fig.1 Reverse Current vs. Reverse Voltage
4/5
ES6U41
Transistors
zMeasurement circuit
Pulse Width
90%
I
D
V
DS
50%
10%
V
GS
50%
V
GS
RL
V
DS
D.U.T.
10%
90%
10%
90%
V
DD
RG
t
d(on)
td(off)
t
r
tf
t
on
toff
Fig.1-2 Switching Waveforms
Fig.1-1 Switching Time Measurement Circuit
V
G
I
D
VDS
Q
g
V
GS
RL
V
GS
D.U.T.
I
G(Const.)
Q
gs
Qgd
V
DD
RG
Charge
Fig.2-1 Gate Charge Measurement Circuit
FIg.2-2 Gate Charge Waveform
zNotice
1. SBD has a large reverse leak current compared to other type of diode. Therefore; it would raise a junction temperature,
and increase a reverse power loss. Further rise of inside temperature would cause a thermal runaway.
This built-in SBD has low VF characteristics and therefore, higher leak current. Please consider enough the
surrounding temperature, generating heat of MOSFET and the reverse current.
2. This product might cause chip aging and breakdown under the large electrified environment. Please consider to design
ESD protection circuit.
5/5
Appendix
Notes
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upon request.
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standard usage and operations of the Products. The peripheral conditions must be taken into account when
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Great care was taken in ensuring the accuracy of the information specified in this document. However, should
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Appendix1-Rev3.0
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