UMF21N [ROHM]
Power management (dual transistors); 电源管理（双晶体管）
| 型号： | UMF21N |
| 厂家： | 
ROHM |
| 描述： | Power management (dual transistors) |
| 文件： | 总5页 (文件大小：52K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
EMF21 / UMF21N
Transistors
Power management (dual transistors)
EMF21 / UMF21N
2SA2018 and DTC114E are housed independently in a EMT6 or UMT6 package.
zExternal dimensions (Units : mm)
zApplication
Power management circuit
EMF21
( )
3
( )
2
( )
1
( )
4
( )
5
( )
6
zFeatures
1.2
1.6
1) Power switching circuit in a single package.
2) Mounting cost and area can be cut in half.
Each lead has same dimensions
ROHM : EMT6 Abbreviated symbol : F21
UMF21N
zStructure
Silicon epitaxial planar transistor
zEquivalent circuits
1.25
2.1
(3)
(2) (1)
0.1Min.
DTr2
Tr1
R1
Each lead has same dimensions
R2
ROHM : UMT6
EIAJ : SC-88
Abbreviated symbol :F21
(4)
(5)
(6)
R
1
=10kΩ
=10kΩ
R2
zPackage, marking, and packaging specifications
Type
Package
EMF21
UMF21N
UMT6
F21
EMT6
F21
Marking
Code
TR
T2R
8000
Basic ordering unit(pieces)
3000
1/4
EMF21 / UMF21N
Transistors
zAbsolute maximum ratings (Ta=25°C)
Tr1
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Symbol
Limits
−15
−12
Unit
V
V
VCBO
VCEO
VEBO
−6
V
I
C
−500
−1.0
150(TOTAL)
150
−55~+150
mA
A
mW
°C
°C
Collector current
1
2
I
CP
Power dissipation
Junction temperature
Range of storage temperature
P
Tj
Tstg
C
1 Single pulse PW=1ms
2 120mW per element must not be exceeded.
Each terminal mounted on a recommended land.
DTr2
Parameter
Symbol
Limits
50
Unit
V
Supply voltage
V
CC
Input voltage
Collector current
V
IN
−10~+40
100
V
1
2
I
C
mA
mA
mW
°C
I
O
50
Output current
Power dissipation
P
Tj
Tstg
C
150(TOTAL)
150
−55~+150
Junction temperature
Range of storage temperature
1 Characteristics of built-in transistor.
°C
2 Each terminal mounted on a recommended land.
zElectrical characteristics (Ta=25°C)
Tr1
Parameter
Symbol
BVCEO
BVCBO
BVEBO
Min.
Typ.
−
Max.
−
Unit
V
Conditions
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
−12
−15
−6
−
I
I
I
C
=−1mA
=−10µA
−
−
V
C
−
−
V
E
=−10µA
CB=−15V
EB=−6V
I
CBO
EBO
CE(sat)
FE
−
−100
−100
−250
680
−
nA
nA
mV
−
V
V
Emitter cut-off current
I
−
−
Collector-emitter saturation voltage
DC current gain
V
−
−100
−
I
C
=−200mA, I
B
=−10mA
=−10mA
=10mA, f=100MHz
=0mA, f=1MHz
h
270
−
V
V
V
CE=−2V, I
C
Transition frequency
f
T
260
6.5
MHz
pF
CE=−2V, IE
CB=−10V, I
E
Collector output capacitance
Cob
−
−
DTr2
Parameter
Symbol Min.
Typ.
Max.
Unit
V
Conditions
V
V
I(off)
I(on)
−
3
−
−
0.5
−
V
CC=5V, I
=0.3V, I
/I =10mA/0.5mA
=5V
CC=50V, V
=5V, I =5mA
O
=100µA
Input voltage
V
O
O=10mA
Output voltage
Input current
V
O(on)
−
0.1
−
0.3
0.88
0.5
−
V
mA
µA
−
IO I
I
I
−
V
V
V
I
Output current
DC current gain
Input resistance
Resistance ratio
I
O(off)
−
−
I=0V
G
I
30
7
−
O
O
R1
10
1
13
1.2
−
kΩ
−
−
−
R
2
/R
1
0.8
−
Transition frequency
f
T
250
MHz
V
CE=10V, IE=−5mA, f=100MHz
Transition frequency of the device
2/4
EMF21 / UMF21N
Transistors
zElectrical characteristic curves
Tr1
1000
1000
1000
100
10
V
CE=2V
V
CE=2V
Ta=25°C
Pulsed
Ta=125°C
Pulsed
Pulsed
Ta=25°C
Ta=−40°C
100
10
1
100
10
IC/IB=50
C
°
C
C
°
°
I
C/I
B
=20
40
−
IC/IB
=10
Ta=125
Ta=25
Ta=
1 1
10
100
1000
11
10
100
1000
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4
BASE TO EMITTER VOLTAGE : VBE (V)
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR CURRENT : IC (mA)
Fig.1 Grounded emitter propagation
characteristics
Fig.2 DC current gain vs.
collector current
Fig.3 Collector-emitter saturation voltage
vs. collector current ( Ι )
1000
10000
1000
100
1000
I
C
/I
B
=20
VCE=2V
Ta=25°C
Pulsed
I
C B=20
/I
Pulsed
Pulsed
Ta=−40°C
Ta=25°C
Ta=125°C
100
10
100
10
Ta=25°C
Ta=125°C
Ta=−40°C
11
10
100
1000
11
10
100
1000
10 1
10
100
1000
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR CURRENT : I
C
(mA)
EMITTER CURRENT : IE (mA)
Fig.4 Collector-emitter saturation voltage
Fig.5 Base-emitter saturation voltage
vs. collector current
Fig.6 Gain bandwidth product
vs. emitter current
vs. collector current ( ΙΙ )
1000
I
f
E
=
0A
1MHz
25°C
=
Ta
=
100
Cib
10
1
Cob
0.1
1
10
100
V)
COLLECTOR TO BASE VOLTAGE : VCB
(
Fig.7 Collector output capacitance
vs. collector-base voltage
Emitter input capacitance
vs. emitter-base voltage
3/4
EMF21 / UMF21N
Transistors
DTr2
10m
5m
100
1k
V
O
=0.3V
V
CC=5V
VO=5V
50
500
Ta=100°C
25°C
−40°C
2m
1m
Ta=100°C
25°C
−40°C
20
10
200
500µ
100
50
Ta=−40°C
25°C
100°C
5
200µ
100µ
50µ
2
20
1
10
5
20µ
10µ
5µ
500m
200m
100m
2
1
2µ
1µ
0
100µ 200µ
500µ 1m
2m
5m 10m 20m 50m 100m
100µ 200µ 500µ1m 2m 5m 10m 20m 50m100m
0.5
1.0
1.5
2.0
2.5
3.0
OUTPUT CURRENT : I (A)
O
OUTPUT CURRENT : I
O
(A)
INPUT VOLTAGE : VI(off) (V)
Fig.1 Input voltage vs. output current
(ON characteristics)
Fig.2 Output current vs. input voltage
(OFF characteristics)
Fig.3 DC current gain vs. output
current
1
lO/lI=20
500m
Ta=100°C
25°C
200m
−40°C
100m
50m
20m
10m
5m
2m
1m
100µ 200µ
500µ 1m
2m
5m 10m 20m 50m 100m
OUTPUT CURRENT : I (A)
O
Fig.4 Output voltage vs. output
current
4/4
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