ENA0963 [SANYO]

P-Channel Silicon MOSFET General-Purpose Switching Device Applications; P沟道MOSFET硅通用开关设备的应用
ENA0963
型号: ENA0963
厂家: SANYO SEMICON DEVICE    SANYO SEMICON DEVICE
描述:

P-Channel Silicon MOSFET General-Purpose Switching Device Applications
P沟道MOSFET硅通用开关设备的应用

开关 通用开关
文件: 总4页 (文件大小:56K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Ordering number : ENA0963  
SANYO Sem iconductors  
DATA S HEET  
P-Channel Silicon MOSFET  
General-Purpose Switching Device  
Applications  
MCH6321  
Features  
1.8V drive  
Specifications  
Absolute Maximum Ratings at Ta=25°C  
Parameter  
Drain-to-Source Voltage  
Symbol  
Conditions  
Ratings  
Unit  
V
V
--20  
±10  
-- 4  
DSS  
GSS  
Gate-to-Source Voltage  
Drain Current (DC)  
V
V
I
D
A
Drain Current (Pulse)  
Allowable Power Dissipation  
Channel Temperature  
Storage Temperature  
I
PW10µs, duty cycle1%  
Mounted on a ceramic board (1200mm20.8mm)  
--16  
1.5  
150  
A
DP  
P
W
°C  
°C  
D
Tch  
Tstg  
--55 to +150  
Electrical Characteristics at Ta=25°C  
Ratings  
typ  
Parameter  
Symbol  
Conditions  
Unit  
min  
--20  
max  
Drain-to-Source Breakdown Voltage  
Zero-Gate Voltage Drain Current  
Gate-to-Source Leakage Current  
Cutoff Voltage  
V
I
=--1mA, V =0V  
D GS  
V
µA  
µA  
V
(BR)DSS  
I
V
V
V
V
=--20V, V =0V  
GS  
--1  
±10  
--1.3  
DSS  
GSS  
DS  
GS  
DS  
DS  
I
=±8V, V =0V  
DS  
V
(off)  
GS  
=--10V, I =--1mA  
--0.4  
2.5  
D
Forward Transfer Admittance  
yfs  
=--10V, I =--2A  
4.3  
63  
S
D
R
(on)1  
I
I
I
=--2A, V =--4.5V  
GS  
83  
125  
200  
mΩ  
mΩ  
mΩ  
DS  
DS  
DS  
D
D
D
Static Drain-to-Source On-State Resistance  
R
R
(on)2  
(on)3  
=--1A, V =--2.5V  
GS  
88  
=--0.2A, V =--1.8V  
GS  
130  
Marking : JV  
Continued on next page.  
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to  
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,  
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be  
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace  
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety  
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case  
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee  
thereof. If you should intend to use our products for applications outside the standard applications of our  
customer who is considering such use and/or outside the scope of our intended standard applications, please  
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our  
customer shall be solely responsible for the use.  
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate  
the performance, characteristics, and functions of the described products in the independent state, and are not  
guarantees of the performance, characteristics, and functions of the described products as mounted in the  
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent  
device, the customer should always evaluate and test devices mounted in the customer  
equipment.  
's products or  
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN  
N1407PE TI IM TC-00001027 No. A0963-1/4  
MCH6321  
Continued from preceding page.  
Ratings  
typ  
Parameter  
Symbol  
Conditions  
Unit  
min  
max  
Input Capacitance  
Ciss  
Coss  
Crss  
V
V
V
=-- 10V, f=1MHz  
=-- 10V, f=1MHz  
=-- 10V, f=1MHz  
375  
pF  
pF  
pF  
ns  
ns  
ns  
ns  
nC  
nC  
nC  
V
DS  
DS  
DS  
Output Capacitance  
Reverse Transfer Capacitance  
Turn-ON Delay Time  
Rise Time  
77  
58  
t (on)  
d
See specified Test Circuit.  
See specified Test Circuit.  
See specified Test Circuit.  
See specified Test Circuit.  
8.1  
31  
t
r
Turn-OFF Delay Time  
Fall Time  
t (off)  
d
40  
t
f
39  
Total Gate Charge  
Qg  
V
DS  
V
DS  
V
DS  
=-- 10V, V =-- 4.5V, I =-- 4A  
GS  
=-- 10V, V =-- 4.5V, I =-- 4A  
GS  
=-- 10V, V =-- 4.5V, I =-- 4A  
GS  
4.6  
0.8  
1.3  
-- 0.86  
D
Gate-to-Source Charge  
Gate-to-Drain “Miller” Charge  
Diode Forward Voltage  
Qgs  
Qgd  
D
D
V
I =-- 4A, V =0V  
S
-- 1.2  
SD  
GS  
Package Dimensions  
unit : mm (typ)  
Switching Time Test Circuit  
7022A-009  
V = --10V  
DD  
V
IN  
2.0  
0.15  
0V  
--4V  
6
5
4
3
I
= --2A  
D
V
IN  
R =5  
L
0 to 0.02  
D
V
OUT  
PW=10µs  
D.C.1%  
1
2
G
0.65  
0.3  
MCH6321  
P.G  
50Ω  
S
1 : Drain  
2 : Drain  
3 : Gate  
4 : Source  
5 : Drain  
6 : Drain  
1
2
3
4
6
5
SANYO : MCPH6  
I
-- V  
I
-- V  
GS  
D
DS  
D
--3.0  
--2.5  
--2.0  
--1.5  
--1.0  
--5  
--4  
--3  
--2  
V = --10V  
DS  
--1  
0
--0.5  
0
V
= --1.0V  
GS  
0
--0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0  
0
--0.5  
--1.0  
--1.5  
--2.0  
--2.5  
IT13009  
Drain-to-Source Voltage, V  
DS  
-- V  
IT13008  
Gate-to-Source Voltage, V -- V  
GS  
No. A0963-2/4  
MCH6321  
R
(on) -- V  
R
DS  
(on) -- Ta  
DS  
GS  
300  
250  
200  
150  
100  
250  
200  
150  
100  
Ta=25°C  
I = --0.2A  
D
--1.0A  
--2.0A  
50  
0
50  
0
0
--1  
--2  
--3  
--4  
--5  
--6  
--7  
--8  
--60 --40 --20  
0
20  
40  
60  
80 100 120 140 160  
Gate-to-Source Voltage, V  
-- V  
IT13026  
Ambient Temperature, Ta -- °C  
IT13027  
GS  
y  
fs-- I  
I
-- V  
D
S
SD  
--10  
10  
7
7
V = --10V  
DS  
V =0V  
GS  
5
3
2
5
--1.0  
3
2
7
5
3
2
--0.1  
7
5
1.0  
7
3
2
5
--0.01  
3
2
7
5
3
2
0.1  
--0.01  
--0.001  
2
3
5
7
2
3
5
7
2
3
5
7
--10  
0
--0.2  
--0.4  
--0.6  
--0.8  
--1.0  
--1.2  
IT13013  
--0.1  
--1.0  
Drain Current, I -- A  
D
IT13012  
Diode Forward Voltage, V -- V  
SD  
Ciss, Coss, Crss -- V  
SW Time -- I  
DS  
D
2
1000  
V
V
= --10V  
= --4V  
f=1MHz  
DD  
GS  
7
5
100  
Ciss  
7
5
3
2
3
2
100  
7
5
10  
t (on)  
d
3
2
7
5
--0.1  
2
3
5
7
2
3
5
7
0
--2  
--4  
--6  
--8  
--10 --12 --14 --16 --18 --20  
--1.0  
--10  
IT13014  
Drain Current, I -- A  
Drain-to-Source Voltage, V  
-- V  
IT13015  
D
DS  
V
-- Qg  
A S O  
GS  
--4.5  
--4.0  
--3.5  
--3.0  
--2.5  
--2.0  
--1.5  
--1.0  
3
2
V
= --10V  
I
= --16A  
PW10µs  
DS  
DP  
I = --4A  
D
--10  
7
5
I
=
--4  
A
D
3
2
--1.0  
7
5
3
2
Operation in this area  
is limited by R (on).  
DS  
--0.1  
7
5
Ta=25°C  
3
2
--0.5  
0
Single pulse  
Mounted on a ceramic board (1200mm20.8mm)  
--0.01  
--0.01  
0
1
2
3
4
5
2
3
5
7
2
3
5
7
2
3
5
7
2 3  
--0.1  
--1.0  
--10  
IT13029  
Total Gate Charge, Qg -- nC  
IT13028  
Drain-to-Source Voltage, V  
-- V  
DS  
No. A0963-3/4  
MCH6321  
P
-- Ta  
D
1.6  
1.5  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0
0
20  
40  
60  
80  
100  
120  
140  
160  
Ambient Temperature, Ta -- °C  
IT13030  
Note on usage : Since the MCH6321 is a MOSFET product, please avoid using this device in the vicinity  
of highly charged objects.  
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using  
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition  
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.  
products described or contained herein.  
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all  
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or  
malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise  
to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt  
safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not  
limited to protective circuits and error prevention circuits for safe design, redundant design, and structural  
design.  
In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are  
controlled under any of applicable local export control laws and regulations, such products may require the  
export license from the authorities concerned in accordance with the above law.  
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or  
mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise,  
without the prior written consent of SANYO Semiconductor Co.,Ltd.  
Any and all information described or contained herein are subject to change without notice due to  
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the  
SANYO Semiconductor Co.,Ltd. product that you intend to use.  
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed  
for volume production.  
Upon using the technical information or products described herein, neither warranty nor license shall be granted  
with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third  
party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's  
intellectual property rights which has resulted from the use of the technical information and products mentioned  
above.  
This catalog provides information as of November, 2007. Specifications and information herein are subject  
to change without notice.  
PS No. A0963-4/4  

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