SMG2318N [SECOS]

N-Channel Logic Level MOSFET;


型号：	SMG2318N
厂家：	SECOS HALBLEITERTECHNOLOGIE GMBH
描述：	N-Channel Logic Level MOSFET
文件：	总4页 (文件大小：474K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

SMG2318N

1.2 A, 30 V, R_DS(ON)160 mΩ

N-Channel Logic Level MOSFET

Elektronische Bauelemente

RoHS Compliant Product

A suffix of “-C” specifies halogen and lead-free

DESCRIPTION

SC-59

These miniature surface mount MOSFETs utilize a High

Cell Density trench process to provide Low R_DS(on)and to

ensure minimal power loss and heat dissipation.

Top View

C B

FEATURES

ꢀ

Low R_DS(on)provides higher efficiency and extends

battery life.

Low thermal impedance copper leadframe SC-59

saves board Space.

ꢀ

Fast switching speed.

Low Gate Charge

Millimeter

Min. Max.

0.10 REF.

0.40 REF.

REF.

Min.

Max.

3.10

3.00

1.70

1.40

2.70

2.25

1.30

1.00

APPLICATION

0.10

0.45

0.85

0.20

0.55

1.15

DC-DC converters and power management

in portable and battery-powered products such as computers,

printer , PCMCIA cards, cellular and cordless telephones.

1.70

0.35

2.30

0.50

PACKAGE INFORMATION

Package

MPQ

Leader Size

SC-59

7 inch

ABSOLUTE MAXIMUM RATINGS (T_A=25°C unless otherwise specified)

Parameter

Symbol

V_DS

Rating

Unit

Drain-Source Voltage

Gate-Source Voltage

V_GS

±20

1.2

T_A=25°C

T_A=70°C

Continuous Drain Current ¹

Pulsed Drain Current ²

I_D

I_DM

I_S

Continuous Source Current (Diode Conduction) ¹

T_A=25°C

T_A=70°C

Operating Junction and Storage Temperature Range

1.3

Power Dissipation ¹

P_D

°C

0.8

T_J, T_STG

-55~150

Thermal Resistance Rating

t≦5 sec R_θJA

Maximum Junction to Ambient ¹

250

°C / W

Notes:

1. Surface Mounted on 1” x 1” FR4 Board.

2. Pulse width limited by maximum junction temperature.

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

10-Apr-2012 Rev. A

Page 1 of 4

SMG2318N

1.2 A, 30 V, R_DS(ON)160 mΩ

N-Channel Logic Level MOSFET

Elektronische Bauelemente

ELECTRICAL CHARACTERISTICS (T_A=25°C unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Static

Gate-Threshold Voltage

Drain-Source Breakdown Voltage

Gate-Body Leakage

V_GS(th)

V_(BR)DSS

I_GSS

0.8

1.7

2.1

V_DS=V_GS, I_D=250µA

V_GS=0, I_D=250µA

±100

V_DS=0, V_GS= ±20V

V_DS=24V, V_GS=0

Zero Gate Voltage Drain Current

On-State Drain Current ¹

I_DSS

µA

V_DS=24V, V_GS=0, T_J= 55°C

V_DS=5V, V_GS=4.5V

V_GS=10V, I_D=1.4A

I_D(on)

3.5

125

230

190

1.8

0.7

160

260

250

Drain-Source On-Resistance ¹

R_DS(ON)

mΩ V_GS=4.5V, I_D=1.2A, T_J= 55°C

V_GS=4.5V, I_D=1.2A

Forward Transconductance ¹

Diode Forward Voltage

g_fs

V_DS=5V, I_D=1.2A

I_S=1.2A, V_GS=0

V_SD

1.2

Dynamic ²

V_DS=10V,

V_GS=4.5V,

I_D=1.2A,

R_L=6Ω

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Turn-on Delay Time

Rise Time

Q_g

Q_gs

Q_gd

T_d(on)

T_r

1.9

0.5

0.9

2.7

V_DS= 10V,

V_GEN=10V,

R_L=50Ω,

I_D=1A

Turn-off Delay Time

T_d(off)

T_f

Fall Time

Notes

Pulse test：PW ≦ 300 us duty cycle ≦ 2%.

Guaranteed by design, not subject to production testing.

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

10-Apr-2012 Rev. A

Page 2 of 4

SMG2318N

1.2 A, 30 V, R_DS(ON)160 mΩ

N-Channel Logic Level MOSFET

Elektronische Bauelemente

CHARACTERISTIC CURVES

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

10-Apr-2012 Rev. A

Page 3 of 4

SMG2318N

1.2 A, 30 V, R_DS(ON)160 mΩ

N-Channel Logic Level MOSFET

Elektronische Bauelemente

CHARACTERISTIC CURVES

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

10-Apr-2012 Rev. A

Page 4 of 4

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