SMG2334NE_12 [SECOS]
3.5A , 30V , RDS(ON) 58 m N-Channel Enhancement MOSFET; 3.5A ， 30V ， RDS （ ON ）58 M N沟道增强型MOSFET
| 型号： | SMG2334NE_12 |
| 厂家： | 
SECOS HALBLEITERTECHNOLOGIE GMBH |
| 描述： | 3.5A , 30V , RDS(ON) 58 m N-Channel Enhancement MOSFET |
| 文件： | 总4页 (文件大小：297K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SMG2334NE
3.5A , 30V , RDS(ON) 58 m
N-Channel Enhancement MOSFET
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
SC-59
DESCRIPTION
These miniature surface mount MOSFETs utilize a high
cell density trench process to provide low RDS(on) and to
ensure minimal power loss and heat dissipation.
A
L
3
3
Top View
C B
1
1
2
FEATURES
2
K
F
E
Low RDS(on) provides higher efficiency and extends battery life.
Low thermal impedance copper leadframe SC-59 saves board
space.
D
H
J
G
Fast switching speed.
High performance trench technology.
Millimeter
Min. Max.
Millimeter
REF.
REF.
Min.
0.10 REF.
0.40 REF.
Max.
A
B
C
D
2.70
2.25
1.30
1.00
3.10
3.00
1.70
1.40
G
H
J
APPLICATION
0.10
0.45
0.85
0.20
0.55
1.15
DC-DC converters and power management in
portable and battery-powered products such as computers, printers,
PCMCIA cards, cellular and cordless telephones.
K
E
F
1.70
0.35
2.30
0.50
L
PACKAGE INFORMATION
Package
MPQ
Leader Size
SC-59
3K
7 inch
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
VDS
Rating
30
Unit
V
Drain-Source Voltage
Gate-Source Voltage
VGS
±12
3.5
V
TA=25°C
TA=70°C
Continuous Drain Current 1
ID
A
2.8
Pulsed Drain Current 2
IDM
IS
20
A
A
Continuous Source Current (Diode Conduction) 1
TA=25°C
TA=70°C
Operating Junction and Storage Temperature Range
1.9
1.3
Power Dissipation 1
PD
W
0.8
TJ, TSTG
-55 ~ 150
°C
Thermal Resistance Rating
t≦10 sec
RθJA
Steady-State
100
166
Maximum Junction to Ambient 1
°C / W
Notes
1. Surface Mounted on 1” x 1” FR4 Board.
2. Pulse width limited by maximum junction temperature.
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
10-Jan-2011 Rev. B
Page 1 of 4
SMG2334NE
3.5A , 30V , RDS(ON) 58 m
N-Channel Enhancement MOSFET
Elektronische Bauelemente
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)
Parameter
Symbol
Min. Typ. Max. Unit
Static
Teat Conditions
Gate-Threshold Voltage
Gate-Body Leakage
VGS(th)
IGSS
1
-
-
-
±10
1
V
VDS = VGS, ID = 250μA
VDS =0, VGS= ±12V
VDS =16V, VGS=0
-
nA
-
-
Zero Gate Voltage Drain Current
On-State Drain Current 1
IDSS
ID(ON)
μA
A
-
-
25
-
VDS =16V, VGS=0, TJ=55°C
VDS =5V, VGS=4.5V
VGS=4.5V, ID =2.8A
VGS=2.5V, ID =2.4A
VDS=10V,,ID =2.8A
IS=1A, VGS=0
7
-
-
-
58
82
-
Drain-Source On-Resistance 1
RDS(ON)
mΩ
-
-
Forward Transconductance 1
Diode Forward Voltage
gFS
-
10
S
V
VSD
-
0.69
-
Dynamic 2
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Ciss
Coss
Crss
Qg
413
VDS=15 V,
VGS=0,
f=1 MHz
pF
nC
76
67
6
-
-
-
-
-
-
-
-
-
-
-
-
-
-
ID=2.8A
V
V
DS=10V
GS=4.5V
Qgs
0.9
1.9
8
Qgd
Td(ON)
Tr
ID=2.8A,
VDS=10V
21
49
26
nS
VGEN=4.5V
Turn-Off Delay Time
Fall Time
Td(OFF)
Tf
RL=3.6Ω,
GEN=6Ω
R
Notes
1. Pulse test：PW≦300 us duty cycle≦2%.
2. Guaranteed by design, not subject to production testing.
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
10-Jan-2011 Rev. B
Page 2 of 4
SMG2334NE
3.5A , 30V , RDS(ON) 58 m
N-Channel Enhancement MOSFET
Elektronische Bauelemente
CHARACTERISTIC CURVE
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
10-Jan-2011 Rev. B
Page 3 of 4
SMG2334NE
3.5A , 30V , RDS(ON) 58 m
N-Channel Enhancement MOSFET
Elektronische Bauelemente
CHARACTERISTIC CURVE
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
10-Jan-2011 Rev. B
Page 4 of 4
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