SSD30N10-70D [SECOS]
N-Ch Enhancement Mode Power MOSFET; N沟道增强型功率MOSFET
| 型号： | SSD30N10-70D |
| 厂家： | 
SECOS HALBLEITERTECHNOLOGIE GMBH |
| 描述： | N-Ch Enhancement Mode Power MOSFET |
| 文件： | 总4页 (文件大小：398K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SSD30N10-70D
N-Ch Enhancement Mode Power MOSFET
21A, 100V, RDS(ON) 78 mΩ
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen free
TO-252(D-Pack)
KEY FEATURES
Low RDS(on) trench technology
Low thermal impedance
Fast switching speed
Typical Applications
PoE Power Sourcing Equipment
PoE Powered Devices
Telecom DC/DC converters
While LED boost converters
A
B
C
D
PRODUCT SUMMARY
G E
PRODUCT SUMMARY
VDS(V)
100
RDS(on) m(
78 @VGS= 10V
92 @VGS= 4.5V
ID(A)
K
J
H F
N
O
P
21
19
M
Drain
Millimeter
Millimeter
REF.
REF.
Min.
Max.
Min.
Max.
Gate
A
B
C
D
E
F
6.4
5.20
2.20
0.45
6.8
2.40
5.40
0.8
6.8
5.50
2.40
0.58
7.3
3.0
6.2
1.20
J
K
M
N
O
P
2.30 REF.
0.70
0.50
0.9
0.90
1.1
1.6
0
0.43
0.15
0.58
Source
G
H
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
PARAMETER
Drain-Source Voltage
SYMBOL
VDS
RATINGS
UNIT
V
100
±20
Gate-Source Voltage
VGS
V
Continuous Drain Current
Pulsed Drain Current b
ID @TC=25℃
IDM
21
A
100
A
Continuous Source Current (Diode Conduction)
Power Dissipation
IS
30
A
PD @TC=25℃
TJ, TSTG
50
W
°C
Operating Junction and Storage Temperature Range
-55 ~ 175
THERMAL RESISTANCE RATINGS
Maximum Thermal Resistance Junction-Ambienta
RθJA
RθJC
50
°C / W
°C / W
Maximum Thermal Resistance Junction-Case
3.0
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature.
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
11-Aug-2010 Rev. A
Page 1 of 4
SSD30N10-70D
N-Ch Enhancement Mode Power MOSFET
21A, 100V, RDS(ON) 78 mΩ
Elektronische Bauelemente
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
PARAMETER
SYMBOL
MIN. TYP. MAX. UNIT TEST CONDITIONS
Static
Gate-Source Threshold Voltage
Gate-Body Leakage
VGS(th)
IGSS
1.0
-
-
-
-
±10
1
V
VDS = VGS, ID = 250μA
-
-
μA VDS= 0V, VGS= 20V
VDS= 80V, VGS= 0V
Zero Gate Voltage Drain Current
IDSS
μA
VDS= 80V, VGS= 0V,
TJ= 55°C
-
-
25
On-State Drain Current
ID(ON)
34
-
-
-
-
78
92
-
A
VDS= 5V, VGS= 10V
VGS= 10V, ID= 9.2A
VGS= 4.5V, ID= 6.1A
VDS= 40V, ID= 5.5A
IS= 9A, VGS = 0V
Drain-Source On-Resistance
RDS(ON)
mΩ
-
-
Forward Transconductance
Diode Forward Voltage
gfs
-
20
0.8
S
V
VSD
-
-
Dynamic
Total Gate Charge
Qg
-
21
-
ID= 9 A
nC VDS= 50 V
VGS= 4.5 V
Gate-Source Charge
Gate-Drain Change
Turn-on Delay Time2
Rise Time
Qgs
Qgd
Td(on)
Tr
-
-
-
-
-
-
3.8
14.2
7.5
13.6
41
-
-
-
-
-
-
VDD= 50 V
ID= 9.6 A
nS RL= 5.2
Turn-off Delay Time
Fall Time
Td(off)
Tf
VGEN= 10 V
RGEN= 6
35
Notes
a. Pulse test： PW ≦ 300 us duty cycle ≦ 2％.
b. Guaranteed by design, not subject to production testing.
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
11-Aug-2010 Rev. A
Page 2 of 4
SSD30N10-70D
N-Ch Enhancement Mode Power MOSFET
21A, 100V, RDS(ON) 78 mΩ
Elektronische Bauelemente
CHARACTERISTICS CURVES
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
11-Aug-2010 Rev. A
Page 3 of 4
SSD30N10-70D
N-Ch Enhancement Mode Power MOSFET
21A, 100V, RDS(ON) 78 mΩ
Elektronische Bauelemente
CHARACTERISTICS CURVES
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
11-Aug-2010 Rev. A
Page 4 of 4
相关型号：
©2020 ICPDF网 联系我们和版权申明