SEMIX302KH16S [SEMIKRON]
Rectifier Thyr./Diode Module; 整流器Thyr /二极管模块
| 型号： | SEMIX302KH16S |
| 厂家： | 
SEMIKRON INTERNATIONAL |
| 描述： | Rectifier Thyr./Diode Module |
| 文件： | 总4页 (文件大小：313K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SEMiX302KH16s
Absolute Maximum Ratings
Symbol Conditions
Chip
Values
Unit
Tc = 85 °C
Tc = 100 °C
Tj = 25 °C
Tj = 130 °C
Tj = 25 °C
Tj = 130 °C
IT(AV)
300
230
A
A
sinus 180°
ITSM
9300
A
10 ms
8000
A
i2t
432000
320000
1700
A2s
A2s
V
10 ms
SEMiX® 2s
VRSM
VRRM
VDRM
1600
V
1600
V
Tj = 130 °C
Tj = 130 °C
(di/dt)cr
(dv/dt)cr
Tj
130
A/µs
V/µs
°C
1000
Rectifier Thyr./Diode Module
SEMiX302KH16s
-40 ... 130
Module
Tstg
-40 ... 125
4000
°C
V
1 min
1 s
Visol
Features
AC sinus 50Hz
4800
V
• Terminal height 17 mm
• Chips soldered directly to isolated
substrate
Characteristics
Typical Applications*
• Input Bridge Rectifier for AC/DC motor
control
• Power supply
Symbol Conditions
Chip
min.
typ.
max.
Unit
Tj = 25 °C, IT = 900 A
VT
1.7
0.85
1.1
V
Tj = 130 °C
Tj = 130 °C
VT(TO)
rT
IDD;IRD
tgd
V
mΩ
mA
µs
Tj = 130 °C, VDD = VDRM; VRD = VRRM
Tj = 25 °C, IG = 1 A, diG/dt = 1 A/µs
VD = 0.67 * VDRM
Tj = 130 °C
75
1
tgr
2
µs
tq
150
150
300
µs
Tj = 25 °C
IH
500
mA
mA
V
Tj = 25 °C, RG = 33 Ω
Tj = 25 °C, d.c.
IL
1000
VGT
IGT
3
Tj = 25 °C, d.c.
200
mA
V
Tj = 130 °C, d.c.
VGD
IGD
Rth(j-c)
0.25
10
Tj = 130 °C, d.c.
mA
K/W
K/W
K/W
K/W
K/W
K/W
per thyristor
per module
per thyristor
sin. 180°
Rth(j-c)
Rth(j-c)
0.091
0.091
per module
per thyristor
per module
Module
Rth(c-s)
per chip
K/W
K/W
Nm
per module
0.045
250
Ms
Mt
a
to heat sink (M5)
to terminals (M6)
3
5
5
2.5
Nm
5 * 9,81 m/s2
w
g
KH
© by SEMIKRON
Rev. 34 – 25.03.2010
1
SEMiX302KH16s
Fig. 1L: Power dissipation per thyristor/diode vs.
on-state current
Fig. 1R: Power dissipation per thyristor/diode vs.
ambient temperature
Fig. 2R: Power dissipation of one module vs. case
temperature
Fig. 2L: Power dissipation of one module vs. rms current
Fig. 3L: Power dissipation of two modules vs. direct
current
Fig. 3R: Power dissipation of two modules vs. case
temperature
2
Rev. 34 – 25.03.2010
© by SEMIKRON
SEMiX302KH16s
Fig. 4L: Power dissipation of three modules vs. direct
current
Fig. 4R: Power dissipation of three modules vs. case
temperature
Fig. 5: Recovered charge vs. current decrease
Fig. 6: Transient thermal impedance vs. time
Fig. 7: On-state characteristics
Fig. 8: Surge overload current vs. time
© by SEMIKRON
Rev. 34 – 25.03.2010
3
SEMiX302KH16s
Fig. 9: Gate trigger characteristics
spring configuration
SEMiX 2s
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX
* The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested
for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is
subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our personal.
4
Rev. 34 – 25.03.2010
© by SEMIKRON
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