SEMIX303GB12E4P [SEMIKRON]
Insulated Gate Bipolar Transistor;
| 型号： | SEMIX303GB12E4P |
| 厂家： | 
SEMIKRON INTERNATIONAL |
| 描述： | Insulated Gate Bipolar Transistor 栅 |
| 文件： | 总3页 (文件大小：190K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SEMiX303GB12E4p
Absolute Maximum Ratings
Symbol Conditions
IGBT
Values
Unit
Tj = 25 °C
VCES
IC
1200
466
359
300
900
V
A
A
A
A
V
Tc = 25 °C
Tc = 80 °C
Tj = 175 °C
ICnom
ICRM
VGES
ICRM = 3xICnom
VCC = 800 V
-20 ... 20
SEMiX® 3p
V
V
GE ≤ 20 V
CES ≤ 1200 V
Tj = 150 °C
tpsc
10
µs
°C
Tj
-40 ... 175
Trench IGBT Modules
Inverse diode
Tc = 25 °C
Tc = 80 °C
IF
378
284
A
A
Tj = 175 °C
SEMiX303GB12E4p
IFnom
IFRM
IFSM
Tj
300
900
1485
-40 ... 175
A
A
A
°C
Target Data
IFRM = 3xIFnom
tp = 10 ms, sin 180°, Tj = 25 °C
Features
• Homogeneous Si
• Trench = Trenchgate technology
• VCE(sat) with positive temperature
coefficient
• High short circuit capability
• Press-fit pins as auxiliary contacts
• UL recognized, file no. E63532
Module
It(RMS)
Tstg
Tterminal = 80 °C
600
-40 ... 125
4000
A
°C
V
Visol
AC sinus 50Hz, t = 1 min
Typical Applications*
Characteristics
Symbol Conditions
IGBT
• AC inverter drives
• UPS
min.
typ.
max.
Unit
• Renewable energy systems
IC = 300 A
Tj = 25 °C
VCE(sat)
1.8
2.2
2.05
2.4
V
V
Remarks
• Product reliability results are valid for
Tj=150°C
V
GE = 15 V
Tj = 150 °C
chiplevel
Tj = 25 °C
Tj = 150 °C
Tj = 25 °C
Tj = 150 °C
VCE0
rCE
0.8
0.7
3.3
5.0
5.8
0.9
0.8
3.8
5.3
6.5
4.0
V
V
mΩ
mΩ
V
mA
mA
nF
nF
nF
nC
Ω
ns
ns
mJ
ns
ns
chiplevel
VGE = 15 V
chiplevel
VGE(th)
ICES
VGE=VCE, IC = 11.4 mA
Tj = 25 °C
5
VGE = 0 V
CE = 1200 V
V
Tj = 150 °C
f = 1 MHz
f = 1 MHz
f = 1 MHz
Cies
Coes
Cres
QG
RGint
td(on)
tr
Eon
td(off)
tf
18.5
1.22
1.04
1695
2.50
190
50
19
600
120
VCE = 25 V
GE = 0 V
V
VGE = - 8 V...+ 15 V
Tj = 25 °C
VCC = 600 V
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
I
C = 300 A
V
GE = ±15 V
R
R
G on = 1.3 Ω
G off = 1.3 Ω
di/dton = 6000 A/µs
di/dtoff = 6000 A/µs
du/dtoff = 3100 V/
µs
Tj = 150 °C
Eoff
40
mJ
Rth(j-c)
per IGBT
0.095
K/W
GB
© by SEMIKRON
Rev. 1 – 21.11.2013
1
SEMiX303GB12E4p
Characteristics
Symbol Conditions
Inverse diode
min.
typ.
max.
Unit
IF = 300 A
Tj = 25 °C
VF = VEC
2.2
2.2
2.52
2.5
V
V
V
GE = 0 V
Tj = 150 °C
chiplevel
Tj = 25 °C
Tj = 150 °C
Tj = 25 °C
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
VF0
rF
1.1
0.7
2.7
3.5
1.3
0.9
3.0
4.2
300
45
1.5
1.1
3.4
4.6
V
V
mΩ
mΩ
A
chiplevel
chiplevel
SEMiX® 3p
IF = 300 A
IRRM
Qrr
di/dtoff = 6000 A/µs
µC
V
V
GE = -15 V
CC = 600 V
Tj = 150 °C
Err
20
mJ
Trench IGBT Modules
Rth(j-c)
per diode
0.15
K/W
Module
LCE
RCC'+EE'
SEMiX303GB12E4p
20
1.2
1.65
0.04
nH
mΩ
mΩ
K/W
Nm
Nm
Nm
g
Target Data
TC = 25 °C
res., terminal-chip
T
C = 125 °C
Features
• Homogeneous Si
• Trench = Trenchgate technology
• VCE(sat) with positive temperature
coefficient
• High short circuit capability
• Press-fit pins as auxiliary contacts
• UL recognized, file no. E63532
Rth(c-s)
Ms
Mt
per module
to heat sink (M5)
3
3
6
6
to terminals (M6)
w
340
Temperature Sensor
R100
Tc=100°C (R25=5 kΩ)
493 ± 5%
3550
±2%
Ω
Typical Applications*
B100/125
R(T)=R100exp[B100/125(1/T-1/T100)]; T[K];
K
• AC inverter drives
• UPS
• Renewable energy systems
Remarks
• Product reliability results are valid for
Tj=150°C
GB
2
Rev. 1 – 21.11.2013
© by SEMIKRON
SEMiX303GB12E4p
SEMiX 3p
pinout
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX
* The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested
for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is
subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff.
© by SEMIKRON
Rev. 1 – 21.11.2013
3
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