SEMIX452GB126HDS_08 [SEMIKRON]
Trench IGBT Modules; 沟道IGBT模块
| 型号： | SEMIX452GB126HDS_08 |
| 厂家： | 
SEMIKRON INTERNATIONAL |
| 描述： | Trench IGBT Modules |
| 文件： | 总5页 (文件大小：359K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SEMiX452GB126HDs
Absolute Maximum Ratings
Symbol Conditions
Values
Unit
IGBT
VCES
1200
455
V
A
A
A
A
V
Tc = 25 °C
Tc = 80 °C
IC
Tj = 150 °C
319
ICnom
ICRM
VGES
300
ICRM = 2xICnom
600
-20 ... 20
SEMiX®2s
VCC = 600 V
VGE ≤ 20 V
Tj = 125 °C
tpsc
10
µs
°C
VCES ≤ 1200 V
Trench IGBT Modules
Tj
-40 ... 150
Inverse diode
SEMiX452GB126HDs
Tc = 25 °C
Tc = 80 °C
IF
394
272
A
A
Tj = 150 °C
Preliminary Data
IFnom
IFRM
IFSM
Tj
300
A
Features
• Homogeneous Si
• Trench = Trenchgate technology
• VCE(sat) with positive temperature
coefficient
• High short circuit capability
• UL recognised file no. E63532
IFRM = 2xIFnom
tp = 10 ms, sin 180°, Tj = 25 °C
600
A
1900
A
-40 ... 150
°C
Module
It(RMS)
Tstg
600
-40 ... 125
4000
A
°C
V
Typical Applications
Visol
AC sinus 50Hz, t = 1 min
• AC inverter drives
• UPS
• Electronic Welding
Characteristics
Symbol Conditions
IGBT
min.
typ.
max.
Unit
Remarks
• Case temperatur limited to TC=125°C
max.
IC = 300 A
VCE(sat)
Tj = 25 °C
1.7
2.1
V
V
V
GE = 15 V
• Not for new design
Tj = 125 °C
2.00
2.45
chiplevel
Tj = 25 °C
Tj = 125 °C
Tj = 25 °C
Tj = 125 °C
VCE0
rCE
1
1.2
1.1
3.0
4.5
6.5
0.3
V
V
0.9
2.3
3.7
5.8
0.1
mΩ
mΩ
V
VGE = 15 V
VGE(th)
ICES
VGE=VCE, IC = 12 mA
Tj = 25 °C
5
mA
mA
nF
nF
nF
nC
Ω
VGE = 0 V
CE = 1200 V
V
Tj = 125 °C
f = 1 MHz
f = 1 MHz
f = 1 MHz
Cies
Coes
Cres
QG
21.5
1.13
0.98
2400
2.50
280
65
VCE = 25 V
GE = 0 V
V
VGE = - 8 V...+ 15 V
Tj = 25 °C
RGint
td(on)
tr
ns
VCC = 600 V
IC = 300 A
Tj = 125 °C
ns
Eon
35
mJ
ns
R
R
G on = 2 Ω
G off = 2 Ω
td(off)
tf
630
130
45
ns
Eoff
mJ
K/W
K/W
Rth(j-c)
Rth(j-s)
per IGBT
per IGBT
0.083
GB
© by SEMIKRON
Rev. 16 – 02.12.2008
1
SEMiX452GB126HDs
Characteristics
Symbol Conditions
Inverse diode
min.
typ.
max.
Unit
IF = 300 A
VF = VEC
Tj = 25 °C
1.6
1.6
1.8
1.8
V
V
V
GE = 0 V
Tj = 125 °C
chiplevel
Tj = 25 °C
Tj = 125 °C
Tj = 25 °C
Tj = 125 °C
Tj = 125 °C
Tj = 125 °C
VF0
rF
0.9
0.7
1.7
2.3
1
1.1
0.9
2.3
3.0
V
V
0.8
2.0
2.7
375
75
mΩ
mΩ
A
SEMiX®2s
IF = 300 A
di/dtoff = 6200 A/µs
IRRM
Qrr
µC
V
V
GE = -15 V
CC = 600 V
Trench IGBT Modules
Tj = 125 °C
Err
33
mJ
Rth(j-c)
Rth(j-s)
per diode
per diode
0.15
K/W
K/W
SEMiX452GB126HDs
Preliminary Data
Module
LCE
18
0.7
nH
mΩ
mΩ
K/W
Nm
Nm
Nm
g
Features
• Homogeneous Si
TC = 25 °C
RCC'+EE'
res., terminal-chip
TC = 125 °C
1
• Trench = Trenchgate technology
• VCE(sat) with positive temperature
coefficient
• High short circuit capability
• UL recognised file no. E63532
Rth(c-s)
Ms
per module
0.045
to heat sink (M5)
3
5
5
to terminals (M6)
Mt
2.5
Typical Applications
w
250
• AC inverter drives
• UPS
• Electronic Welding
Temperature sensor
0,493
±5%
R100
Tc=100°C (R25=5 kΩ)
kΩ
Remarks
• Case temperatur limited to TC=125°C
max.
R(T)=R100exp[B100/125(1/T-1/T100)];
T[K];
3550
±2%
B100/125
K
• Not for new design
GB
2
Rev. 16 – 02.12.2008
© by SEMIKRON
SEMiX452GB126HDs
Fig. 1 Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2 Rated current vs. temperature IC = f (TC)
Fig. 4 Typ. turn-on /-off energy = f (RG)
Fig. 6 Typ. gate charge characteristic
Fig. 3 Typ. turn-on /-off energy = f (IC)
Fig. 5 Typ. transfer characteristic
© by SEMIKRON
Rev. 16 – 02.12.2008
3
SEMiX452GB126HDs
Fig. 7 Typ. switching times vs. IC
Fig. 8 Typ. switching times vs. gate resistor RG
Fig. 9 Typ. transient thermal impedance
Fig. 10 Typ. CAL diode forward charact., incl. RCC'+EE'
Fig. 11 Typ. CAL diode peak reverse recovery current
Fig. 12 Typ. CAL diode recovery charge
4
Rev. 16 – 02.12.2008
© by SEMIKRON
SEMiX452GB126HDs
SEMiX 2s
GB
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX
This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied
is made regarding delivery, performance or suitability.
© by SEMIKRON
Rev. 16 – 02.12.2008
5
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