ST2N5087 [SEMTECH]

PNP Silicon Epitaxial Planar Transistor; PNP硅外延平面晶体管
ST2N5087
型号: ST2N5087
厂家: SEMTECH CORPORATION    SEMTECH CORPORATION
描述:

PNP Silicon Epitaxial Planar Transistor
PNP硅外延平面晶体管

晶体 晶体管
文件: 总5页 (文件大小:359K)
中文:  中文翻译
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ST 2N5086 / 2N5087  
PNP Silicon Epitaxial Planar Transistor  
for switching and AF amplifier applications.  
The transistor is subdivided into one group  
according to it DC current gain. As complementary  
type the NPN transistor ST 2N5088 and ST  
2N5089 are recommended.  
On special request, these transistors can be  
manufactured in different pin configurations.  
TO-92 Plastic Package  
Weight approx. 0.19g  
O
Absolute Maximum Ratings (Ta = 25 C)  
Parameter  
Collector Base Voltage  
Collector Emitter Voltage  
Emitter Base Voltage  
Symbol  
-VCBO  
-VCEO  
-VEBO  
-IC  
Value  
Unit  
50  
V
V
50  
3
50  
V
Collector Current  
mA  
mW  
Power Dissipation  
Ptot  
500  
O
Junction Temperature  
Storage Temperature Range  
Tj  
150  
C
O
C
TS  
-55 to +150  
SEMTECH ELECTRONICS LTD.  
(Subsidiary of Sino-Tech International Holdings Limited, a company  
listed on the Hong Kong Stock Exchange, Stock Code: 724)  
®
Dated : 02/12/2005  
ST 2N5086 / 2N5087  
O
Characteristics at Tamb = 25 C  
Parameter  
Symbol  
Min.  
Typ.  
Max.  
Unit  
DC Current Gain  
at -VCE=5V, -IC=0.1mA  
ST 2N5086  
ST 2N5087  
ST 2N5086  
ST 2N5087  
ST 2N5086  
ST 2N5087  
hFE  
hFE  
hFE  
hFE  
hFE  
hFE  
150  
200  
150  
200  
150  
200  
-
-
-
-
-
-
500  
800  
-
-
-
-
-
-
-
-
-
-
at -VCE=5V, -IC= 1mA  
at -VCE=5V, -IC= 10mA  
Collector Base Breakdown Voltage  
at -IC=100µA  
Collector Emitter Breakdown Voltage  
at -IC=1mA  
Emitter Base Breakdown Voltage  
at -IE=10µA  
Collector Cutoff Current  
at -VCB=35V  
Emitter Cutoff Current  
at -VEB=3V  
Collector Saturation Voltage  
at -IC=10mA, -IB=1mA  
Base Emitter Voltage  
at -VCE=5V, -IC=1mA  
Gain Bandwidth Product  
at -VCE=5V, -IC=0.5mA  
Output Capacitance  
50  
50  
3
-
-
-
V
V
-V(BR)CBO  
-V(BR)CEO  
-V(BR)EBO  
-ICBO  
-
-
-
-
V
-
0.05  
0.05  
0.3  
0.85  
-
µA  
µA  
V
-
-
-
-IEBO  
-
-VCE(sat)  
-VBE(on)  
fT  
-
-
V
40  
-
180  
2.8  
-
MHz  
pF  
dB  
-
COB  
at -VCB=10V, f=1MHz  
Noise Figure  
at -VCE=6V, -IC=0.3mA, f=100Hz, RS=10K  
-
3
NF  
SEMTECH ELECTRONICS LTD.  
(Subsidiary of Sino-Tech International Holdings Limited, a company  
listed on the Hong Kong Stock Exchange, Stock Code: 724)  
®
Dated : 02/12/2005  
ST 2N5086 / 2N5087  
SEMTECH ELECTRONICS LTD.  
(Subsidiary of Sino-Tech International Holdings Limited, a company  
listed on the Hong Kong Stock Exchange, Stock Code: 724)  
®
Dated : 02/12/2005  
ST 2N5086 / 2N5087  
SEMTECH ELECTRONICS LTD.  
(Subsidiary of Sino-Tech International Holdings Limited, a company  
listed on the Hong Kong Stock Exchange, Stock Code: 724)  
®
Dated : 02/12/2005  
ST 2N5086 / 2N5087  
SEMTECH ELECTRONICS LTD.  
(Subsidiary of Sino-Tech International Holdings Limited, a company  
listed on the Hong Kong Stock Exchange, Stock Code: 724)  
®
Dated : 02/12/2005  

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