SGM66099C [SGMICRO]
Synchronous Boost Converter with Ultra-Low Quiescent Current;型号: | SGM66099C |
厂家: | Shengbang Microelectronics Co, Ltd |
描述: | Synchronous Boost Converter with Ultra-Low Quiescent Current |
文件: | 总16页 (文件大小:799K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
SGM66099C
Synchronous Boost Converter
with Ultra-Low Quiescent Current
GENERAL DESCRIPTION
FEATURES
The SGM66099C is an ultra-low quiescent current
synchronous Boost converter. An operating input voltage
range from 1.6V to 5.2V is suitable for Li-Mn battery,
NiMH and Li-Ion rechargeable batteries. The 1.7μA(TYP)
quiescent current maximizes the light load efficiency
and also increases the effective battery operation time.
In addition, the high-side synchronous rectifier provides
output disconnect feature which minimizes unnecessary
current drawn from the battery during shutdown mode.
● Operating Input Voltage Range: 1.6V to 5.2V
● Adjustable Output Voltage from 2.5V to 5.4V
● Ultra-Low Quiescent Current
0.05µA (TYP) Ultra-Low IQ into VIN Pin
1.7µA (TYP) Ultra-Low IQ into VOUT Pin
● 1.2MHz Fixed Frequency Operation
● Up to 93% Efficiency from 10mA to 300mA Load
● Power-Save Mode for Improved Efficiency at Low
Output Power
The SGM66099C is able to deliver 300mA output
current from 3.3V to 5V conversion, and achieves 93%
peak efficiency at 200mA load.
● Regulated Output Voltage in Down Mode
● True Disconnection during Shutdown
● Short-Circuit Protection
● Over-Voltage Protection
The device offers down mode where the desired output
voltage is regulated even when the input voltage is
higher than the output. In addition, when the input
voltage is 300mV above the output voltage set point,
the device enters pass-through mode.
● Thermal Shutdown
● Available in Green WLCSP-1.3×0.83-6B and
TDFN-2×2-6AL Packages
APPLICATIONS
The device integrates various protection features such
as over-voltage protection and thermal shutdown. In
addition, the synchronous rectifier supports short-circuit
protection which further improves the robustness of the
device.
LCD and LED Bias
Portable and Wearable Applications
Low Power Wireless Applications
Battery Powered Systems
The SGM66099C offers adjustable output voltage
version. It is available in Green WLCSP-1.3×0.83-6B
and TDFN-2×2-6AL packages.
TYPICAL APPLICATION
L
2.2μH
VIN
1.6V to 5.2V
CIN
10μF
SW
VOUT
2.5V to 5.4V
VIN
VOUT
FB
COUT1
10μF
COUT2
10μF
R1
SGM66099C
ON
EN
OFF
GND
R2
Figure 1. Typical Application Circuit
SG Micro Corp
MARCH 2023 – REV. A. 1
www.sg-micro.com
Synchronous Boost Converter
with Ultra-Low Quiescent Current
SGM66099C
PACKAGE/ORDERING INFORMATION
SPECIFIED
TEMPERATURE
RANGE
PACKAGE
DESCRIPTION
ORDERING
NUMBER
PACKAGE
MARKING
PACKING
OPTION
MODEL
0H
XX
05F
WLCSP-1.3×0.83-6B -40℃ to +85℃
SGM66099C-ADJYG/TR
Tape and Reel, 3000
Tape and Reel, 3000
SGM66099C-ADJ
TDFN-2×2-6AL
-40℃ to +85℃ SGM66099C-ADJYTDI6G/TR
XXXX
MARKING INFORMATION
NOTE: XX = Date Code. XXXX = Date Code and Trace Code.
WLCSP-1.3×0.83-6B
TDFN-2×2-6AL
Serial Number
Serial Number
YY
X X
Y Y Y
X X X X
Trace Code
Date Code - Year
Date Code - Week
Date Code - Year
Green (RoHS & HSF): SG Micro Corp defines "Green" to mean Pb-Free (RoHS compatible) and free of halogen substances. If
you have additional comments or questions, please contact your SGMICRO representative directly.
OVERSTRESS CAUTION
ABSOLUTE MAXIMUM RATINGS
Stresses beyond those listed in Absolute Maximum Ratings
may cause permanent damage to the device. Exposure to
absolute maximum rating conditions for extended periods
may affect reliability. Functional operation of the device at any
conditions beyond those indicated in the Recommended
Operating Conditions section is not implied.
VIN.................................................................... -0.3V to 5.5V
SW, VOUT, FB, EN to GND.............................. -0.3V to 6.0V
Package Thermal Resistance
WLCSP-1.3×0.83-6B, θJA ........................................ 143℃/W
TDFN-2×2-6AL, θJA.................................................. 105℃/W
Junction Temperature.................................................+150℃
Storage Temperature...................................-65℃ to +150℃
Lead Temperature (Soldering, 10s)............................+260℃
ESD Susceptibility
ESD SENSITIVITY CAUTION
This integrated circuit can be damaged if ESD protections are
not considered carefully. SGMICRO recommends that all
integrated circuits be handled with appropriate precautions.
Failure to observe proper handling and installation
procedures can cause damage. ESD damage can range from
subtle performance degradation to complete device failure.
Precision integrated circuits may be more susceptible to
damage because even small parametric changes could
cause the device not to meet the published specifications.
HBM.............................................................................1000V
CDM ............................................................................1000V
RECOMMENDED OPERATING CONDITIONS
Input Voltage Range.......................................1.6V (1) to 5.2V
Output Voltage Range ........................................2.5V to 5.4V
Operating Ambient Temperature Range........-40℃ to +85℃
Operating Junction Temperature Range......-40℃ to +125℃
NOTE: 1. Refer to the “Start-up and Enable” for detailed
description.
DISCLAIMER
SG Micro Corp reserves the right to make any change in
circuit design, or specifications without prior notice.
SG Micro Corp
www.sg-micro.com
MARCH 2023
2
Synchronous Boost Converter
with Ultra-Low Quiescent Current
SGM66099C
PIN CONFIGURATIONS
(TOP VIEW)
(TOP VIEW)
1
2
GND
VOUT
FB
1
2
3
6
5
4
VIN
SW
EN
A
B
C
VIN
GND
GND
SW
EN
VOUT
FB
WLCSP-1.3×0.83-6B
TDFN-2×2-6AL
PIN DESCRIPTION
PIN
NAME
TYPE
FUNCTION
WLCSP-
TDFN-
1.3×0.83-6B
2×2-6AL
A1
6
1
5
2
4
3
VIN
GND
SW
P
G
O
O
I
Power Supply Input.
Ground.
A2
B1
B2
C1
C2
—
Switch Node. Drain connection of low-side power MOSFET.
Boost Converter Output.
VOUT
EN
Device Enable Node. Pulling this pin logic high enables the device, and logic
low disables the device.
Voltage Feedback of Adjustable Output Voltage. Connect a resistive divider
to program the desired output voltage.
FB
I
Exposed
Pad
GND
—
Connect to GND.
NOTE: I: input, O: output, G: ground, P: power for the circuit.
SG Micro Corp
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MARCH 2023
3
Synchronous Boost Converter
with Ultra-Low Quiescent Current
SGM66099C
ELECTRICAL CHARACTERISTICS
(VIN = 1.6V to 5.2V, CIN = 10μF, COUT = 20μF. TJ = -40℃ to +85℃, typical values are at VIN = 3.7V, TJ = +25℃, unless otherwise
noted.)
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
Power Supply
Input Voltage Range
VIN
IQ
1.6
5.2
0.4
V
TJ = +25℃
Quiescent Current into VIN Pin
No load, not switching
0.05
1.7
µA
No load, not switching, Boost or down
mode
Quiescent Current into VOUT Pin
7
1
µA
µA
Shutdown Current into VIN Pin
Output
ISD
EN = GND, VIN = 3.7V
0.1
Output Voltage Range
VOUT
VREF
2.5
5.4
V
V
V
VIN < VOUT, PWM mode
VIN < VOUT, PFM mode
0.977
1.000
1.015
1.04
Feedback Reference Voltage
Output Over-Voltage Protection
Threshold
VOVP
5.55
5.80
6.00
50
V
VOUT rising, TJ = +25℃
OVP Hysteresis
50
10
mV
nA
Leakage Current into FB Pin
Switching
IFB_LKG
VFB = 1.1V
WLCSP
0.85
0.8
1.2
1.2
1.4
1.4
Switching Frequency
fSW
VIN = 3.7V
TDFN
MHz
mΩ
mΩ
Power Switch
WLCSP
VOUT = 4.7V, TJ = +25℃
TDFN
220
250
280
310
260
290
330
370
1.16
0.85
330
370
400
430
380
390
470
480
1.46
1.03
Low-side Switch On-Resistance
RDSON_LS
WLCSP
VOUT = 3.3V, TJ = +25℃
TDFN
WLCSP
VOUT = 4.7V, TJ = +25℃
TDFN
Rectifier On-Resistance
Current Limit Threshold
RDSON
WLCSP
VOUT = 3.3V, TJ = +25℃
TDFN
0.80
0.65
A
A
V
OUT > 2.5V, Boost operation, TJ = +25℃
ILIM
VOUT = 2.5V, Boost operation, TJ = +25℃
Control Logic
EN Input Low Voltage Threshold
EN Input High Voltage Threshold
Leakage Current into EN Pin
Thermal Shutdown Threshold
Thermal Shutdown Hysteresis
VIL
VIH
0.3
V
V
1.2
IEN_LKG
300
nA
℃
℃
VEN = 5.0V, TJ = +25℃
150
25
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Synchronous Boost Converter
with Ultra-Low Quiescent Current
SGM66099C
TYPICAL PERFORMANCE CHARACTERISTICS
CIN = 10μF and COUT = 20μF, unless otherwise noted.
Load Efficiency with Different Inputs
Quiescent Current into VOUT Pin vs. Temperature
100
90
80
70
60
50
40
30
20
10
0
2.50
2.25
2.00
1.75
1.50
1.25
1.00
VIN = 3.7V
No Switching
VIN = 1.5V
V
V
V
IN = 3.0V
IN = 3.6V
IN = 4.2V
VOUT = 5.0V
0.01
0.1
1
10
100
1000
-40
-20
0
20
40
60
80
100
Output Current (mA)
Temperature (℃)
Shutdown Current vs. Temperature
Reference Voltage vs. Temperature
0.07
0.06
0.05
0.04
0.03
0.02
0.01
1.010
1.008
1.006
1.004
1.002
1.000
VIN = 3.7V
Into VIN and SW
VIN = 3.7V
-40
-20
0
20
40
60
80
100
-40
-20
0
20
40
60
80
100
Temperature (℃)
Temperature (℃)
Start-up by VIN Pin
Start-up by EN Pin
VIN = 3.7V, VOUT = 5.0V
ROUT = 100Ω
VIN = 3.7V, VOUT = 5.0V
ROUT = 100Ω
VOUT
VOUT
VEN
IL
VIN
IL
Time (1ms/div)
Time (1ms/div)
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Synchronous Boost Converter
with Ultra-Low Quiescent Current
SGM66099C
TYPICAL PERFORMANCE CHARACTERISTICS (continued)
CIN = 10μF and COUT = 20μF, unless otherwise noted.
Switching Waveform at Heavy Load
Switching Waveform at Light Load
VIN = 3.7V, VOUT = 5.0V, IOUT = 300mA
VIN = 3.7V, VOUT = 5.0V, IOUT = 1mA
AC Coupled
AC Coupled
VOUT
VOUT
VSW
VSW
IL
IL
Time (500ns/div)
Time (100μs/div)
Load Regulation
Load Transient Response
VIN = 3.7V, VOUT = 5.0V, IOUT = 0A to 300mA
VIN = 3.7V, VOUT = 5.0V, IOUT = 50mA to 300mA
AC Coupled
AC Coupled
VOUT
VOUT
IOUT
IOUT
IL
IL
Time (5ms/div)
Time (100μs/div)
Line Regulation
VIN = 2.4V to 5.3V, VOUT = 5.0V, IOUT = 200mA
AC Coupled
VOUT
VIN
IL
Time (50ms/div)
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MARCH 2023
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Synchronous Boost Converter
with Ultra-Low Quiescent Current
SGM66099C
FUNCTIONAL BLOCK DIAGRAM
L
SW
2.2V
VOUT
+
VIN
VIN
VOUT
1.6V to 5.2V
2.5V to 5.4V
-
CIN
COUT
VOUT
VIN
Gate
Drive
VOUT
ON
Logic,
Thermal Shutdown,
OCP, OVP,
Current Sense
EN
Short-Circuit
Protection
OFF
R1
FB
PWM Control
VIN
Soft-Start
R2
VREF
VOUT
Down Mode and
Pass-Through Mode
GND
Figure 2. Block Diagram
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Synchronous Boost Converter
with Ultra-Low Quiescent Current
SGM66099C
DETAILED DESCRIPTION
The SGM66099C synchronous Boost converter is
designed for Li-Ion battery powered systems, where the
compact solution size and battery operation time are
key criterions. The device employs peak current mode
control with 1.16A (TYP) peak switch current limit. The
SGM66099C is capable of disconnecting the output from
input when the device is disabled to avoid unnecessary
current consumption. The integrated down mode and
pass-through mode ensure a smooth operation when
input voltage is close to or higher than the set output
voltage. The device is available in an adjustable output
voltage version.
the current limit to about 350mA (TYP) to reduce power
dissipation within the device. As the short-circuit
condition is removed, the device resumes operation
and goes through a soft-start sequence to regulate the
set output voltage.
Over-Voltage Protection (OVP)
SGM66099C integrates over-voltage protection to
protect the device in case of feedback resistor
short-to-ground or incorrect feedback resistor value
being populated. The SGM66099C stops switching
when the OVP threshold of 5.8V (TYP) is reached. The
device implements 50mV OVP hysteresis. When the
output voltage is 50mV lower than the OVP threshold,
the device resumes switching.
Start-up and Enable
Logic high on EN pin enables the SGM66099C, while a
logic low disables the device. During logic low state, the
device stops operation, and the output voltage is
completely disconnected from the input voltage. During
logic low state, the shutdown current is less than 1μA.
Power-Save Mode under Light Load
Condition
SGM66099C enters power-save mode under light load
condition.
The SGM66099C is able to start up from 1.6V input
voltage with larger than 3kΩ load. Before the output
voltage reaches 2.2V during the start-up phase, the
switch current is limited to about 350mA (TYP).
Therefore, if the load during start-up is too heavy, the
device will fail to charge the output voltage to above
2.2V after soft-start time expires, and it will not be able
to start up successfully.
Down Mode and Pass-Through Mode
SGM66099C offers down mode feature where the
device can still regulate the set output voltage even
when the input voltage is higher than output voltage. If
the input voltage continues increasing in down mode,
the device automatically enters pass-through mode.
Care should be taken in pass-through mode, where the
input voltage should not exceed the recommended
maximum input voltage.
Over-Current and Short-Circuit Protection
The SGM66099C implements cycle-by-cycle current
limit during an over-current event. When the current limit
threshold (ILIM) is reached, the low-side power MOSFET
is turned off to prevent the inductor current from further
increase. During over-current event, the output voltage
will drop until a constant power state is reached
between input and output. If the current limit causes the
output to drop below the input voltage, the
SGM66099C goes into down mode, where the peak
current is still limited by the current limit threshold
cycle-by-cycle. If the output continues to drop below
2.2V, the device automatically enters short-circuit
condition with 350mA (TYP) reduced current limit.
In down mode, the control logic pulls the gate of PMOS
to the input voltage rather than ground. This method
allows effective control of inductor current when VIN
>
VOUT. Thermal consideration should be taken in down
mode, where the voltage drop across the PMOS
increases as the delta of VIN and VOUT increases.
In pass-through mode, the complimentary switching
action stops. The gate of PMOS is pulled to ground for
always-on and the low-side switch remains off. The
output voltage equals to the input voltage minus the
voltage drop across the DC resistance of the inductor
and the on-resistance of the rectifying PMOS.
During the output short-to-ground case, as output
voltage declines below 2.2V, the SGM66099C reduces
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Synchronous Boost Converter
with Ultra-Low Quiescent Current
SGM66099C
DETAILED DESCRIPTION (continued)
The SGM66099C enters down mode when the input
voltage is equal to or higher than VOUT - 100mV. It
remains in down mode until VIN > VOUT + 0.3V and then
automatically enters pass-through mode. In the
pass-through mode, the high-side PMOS is always
turned on to pass the input voltage to the output. As VIN
drops below 1% above the target output voltage, the
device exits pass-through mode and returns to down
mode. The device exits down mode and returns to
normal Boost switching operation as VIN drops 250mV
below the target output voltage.
Thermal Shutdown
A thermal shutdown function is implemented to prevent
damage caused by excessive heat and power
dissipation. Once a junction temperature of +150℃
(TYP) is exceeded, the device is shut down. The device
is released from shutdown automatically when the
junction temperature decreases by 25℃.
Voltage (V)
Down
Mode
Down
Mode
Pass-Through Mode
300mV
1% VOUT
VOUT
VIN
100mV
250mV
t
Figure 3. Down Mode and Pass-Through Mode
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Synchronous Boost Converter
with Ultra-Low Quiescent Current
SGM66099C
APPLICATION INFORMATION
L
2.2μH
VIN
2.7V to 4.2V
CIN
10μF
SW
VOUT
5V
VIN
VOUT
COUT1
10μF
COUT2
10μF
SGM66099C
R1
R2
ON
EN
FB
OFF
GND
Figure 4. 5V Output Boost Converter
Design Requirements
Maximum Output Current
5V output at 200mA load current is used to provide
system bias power or LED bias voltage from a single
cell Li-Ion battery as an example. Please refer the
following parts to design external component values for
the SGM66099C.
The maximum output load capability of SGM66099C
depends on the minimum desired operation input
voltage and the current limit of the device. Equation 2
can be used to calculate the maximum load current,
I
V ⋅(ILIM
-
LH ) ⋅η
IN
Table 1. Design Requirements
2
(2)
IOUT(MAX)
=
VOUT
Parameters
Input Voltage
Values
2.7V ~ 4.2V
5V
where η is the conversion efficiency, using 85% for
estimation. ILH is the inductor peak-to-peak ripple
current and ILIM is the switch current limit.
Output Voltage
Output Current
200mA
±50mV
Output Voltage Ripple
For worst-case condition analysis, minimum input
voltage, maximum Boost output voltage and minimum
current limit (ILIM) should be used.
Programming the Output Voltage
External resistor dividers (R1 and R2) program the
output voltage (Equation 1). VREF is 1.0V (TYP).
Inductor Selection
Inductor selection is one of the most important
criterions for switch mode power supply, because the
inductor selection may affect the power supply’s
transient response, loop stability, efficiency and
steady-state operation. Inductor parameters of DC
resistance, inductance and saturation current are
critical for a smooth and efficient power supply
operation.
R1 + R2
(1)
VOUT = VREF
×
R2
The leakage current into the FB pin affects the
accuracy of output voltage. To achieve the minimum
leakage current effect, the current through R2 should be
100 times greater than the FB pin leakage current.
Small R2 increases the noise immunity, while large R2
reduces the leakage current flowing through feedback
resistors, which improves the no load efficiency of the
device. A 1MΩ resistor is chosen for R1 and a 249kΩ
resistor is chosen for R2 in this case. ±1% accuracy
resistors are recommended for R1 and R2 to improve
output voltage accuracy.
The internal compensation of the device is optimized
with 1.0μH and 2.2μH. When VOUT is higher than 3V,
2.2μH inductance should be selected. When VOUT is
less than 3V, 1.0μH inductance should be selected.
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Synchronous Boost Converter
with Ultra-Low Quiescent Current
SGM66099C
APPLICATION INFORMATION (continued)
Table 2. List of Inductors
Inductance
(µH)
Saturation
Current (A)
DC Resistance
Size
VOUT (V)
Part Number
Manufacturer
(mΩ)
L × W × H (mm3)
2.2
2.2
2.2
1.0
1.0
1.0
1.95
1.8
80
114
130
69
2.5 × 2.0 × 1.2
2.5 × 2.0 × 1.0
2.5 × 1.6 × 1.0
2.5 × 2.0 × 1.2
2.5 × 2.0 × 1.0
2.5 × 1.6 × 1.0
SPH252012H2R2MT
SPH252010H2R2MT
Sunlord
Sunlord
TDK
> 3.0
2.2
TFM201610ALMA2R2MTAA
SWPA252012S1R0NT
SPH252010H1R0MT
2.9
Sunlord
Sunlord
TDK
≤ 3.0
2.45
2.9
67
60
VLS201610HBX-1R0M-1
Capacitor Selection
Layout Considerations
The input capacitor of Boost converter not only
minimizes the input voltage ripple, but also reduces any
voltage spike presenting on the VIN pin. A 10μF, low
ESR and X5R or higher temperature coefficient
ceramic capacitor is recommended to place as close to
the VIN and GND pins as possible to improve transient
response and EMI behavior.
In addition to component selection, layout is a critical
step to ensure the performance of any switch mode
power supplies. Poor layout could result in system
instability, EMI failure, and device damage. Thus, place
the inductor, input and output capacitors as close to the
device as possible, and use wide and short traces for
current carrying traces to minimize PCB inductance.
Boost converter’s output capacitor plays a significant
role in ensuring good system performance. The
location of output capacitor will have an effect on the
switching spikes on the SW pin, which ultimately affects
EMI performance and potentially damages the device
due to large switching spikes. The current loop formed
by the output capacitor flowing from the VOUT pin and
back to the GND pin should be as small as possible.
Therefore, a ceramic cap is recommended to put as
close to the VOUT and GND pins of the device as
possible.
For Boost converter, the current loop of the output
capacitor from VOUT pin back to the GND pin of the
device should be as small as possible.
ADJ ONLY
GND
VOUT
COUT
GND
COUT
Boost topology presents right-half-plane-zero which is
dictated by inductance. In addition, the output capacitor
sets the corner frequency of the converter for current
mode controlled method. Therefore, when selects a
larger inductor, there should be a larger output
capacitor. The device’s internal compensation is
optimized to operate with inductance values between
1.0μH and 2.2μH, resulting in the minimum output
CIN
EN
capacitor value of 20μF (nominal value). Increasing the
output capacitor can reduce output ripple in PWM
mode.
VIN
SW
Due to the nature of ceramic capacitors’ DC bias effect,
effective capacitance at the bias voltage should be
verified. GRM188R61E106MA73D is used as the
output capacitor in this case. In the case of load
hot-plugging, the input capacitance of load device
needs to be less than 1/10 of the output capacitance of
SGM66099C.
Figure 5. SGM66099C PCB Layout
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Synchronous Boost Converter
with Ultra-Low Quiescent Current
SGM66099C
REVISION HISTORY
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
MARCH 2023 ‒ REV.A to REV.A.1
Page
Added the TDFN Package....................................................................................................................................................................... 1, 2, 3, 4
Changes from Original (OCTOBER 2022) to REV.A
Page
Changed from product preview to production data.............................................................................................................................................All
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PACKAGE INFORMATION
PACKAGE OUTLINE DIMENSIONS
WLCSP-1.3×0.83-6B
0.23
6 × Φ
D
A1 CORNER
0.21
0.40
E
0.40
RECOMMENDED LAND PATTERN (Unit: mm)
TOP VIEW
6 × Φd
2
1
A
B
C
e
C
A
A1
SEATING PLANE
e
ccc C
SIDE VIEW
BOTTOM VIEW
Dimensions In Millimeters
Symbol
MIN
MOD
0.600
MAX
0.638
0.214
0.865
1.335
0.288
A
A1
D
0.562
0.174
0.805
1.275
0.248
0.194
0.835
E
1.305
d
0.268
e
0.400 BSC
0.050
ccc
-
-
NOTE: This drawing is subject to change without notice.
SG Micro Corp
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PACKAGE INFORMATION
PACKAGE OUTLINE DIMENSIONS
TDFN-2×2-6AL
D
e
N6
L
D1
E1
E
N3
N1
b
BOTTOM VIEW
TOP VIEW
1.60
0.55
1.00
2.60
A
A1
A2
SIDE VIEW
0.30
0.65
RECOMMENDED LAND PATTERN (Unit: mm)
Dimensions
In Millimeters
Dimensions
In Inches
Symbol
MIN
MAX
0.800
0.050
MIN
MAX
0.031
0.002
A
A1
A2
D
0.700
0.000
0.028
0.000
0.203 REF
0.008 REF
1.900
1.500
1.900
0.900
0.250
2.100
1.700
2.100
1.100
0.350
0.075
0.059
0.075
0.035
0.010
0.083
0.067
0.083
0.043
0.014
D1
E
E1
b
e
0.650 BSC
0.026 BSC
L
0.174
0.326
0.007
0.013
NOTE: This drawing is subject to change without notice.
SG Micro Corp
TX00132.000
www.sg-micro.com
PACKAGE INFORMATION
TAPE AND REEL INFORMATION
REEL DIMENSIONS
TAPE DIMENSIONS
P2
P0
W
Q2
Q4
Q2
Q4
Q2
Q4
Q1
Q3
Q1
Q3
Q1
Q3
B0
Reel Diameter
P1
A0
K0
Reel Width (W1)
DIRECTION OF FEED
NOTE: The picture is only for reference. Please make the object as the standard.
KEY PARAMETER LIST OF TAPE AND REEL
Reel Width
Reel
Diameter
A0
B0
K0
P0
P1
P2
W
Pin1
Package Type
W1
(mm)
(mm) (mm) (mm) (mm) (mm) (mm) (mm) Quadrant
WLCSP-1.3×0.83-6B
TDFN-2×2-6AL
7″
9.5
9.5
0.95
2.30
1.42
2.30
0.74
1.10
4.0
4.0
4.0
4.0
2.0
2.0
8.0
8.0
Q1
Q2
7″
SG Micro Corp
TX10000.000
www.sg-micro.com
PACKAGE INFORMATION
CARTON BOX DIMENSIONS
NOTE: The picture is only for reference. Please make the object as the standard.
KEY PARAMETER LIST OF CARTON BOX
Length
(mm)
Width
(mm)
Height
(mm)
Reel Type
Pizza/Carton
7″ (Option)
7″
368
442
227
410
224
224
8
18
SG Micro Corp
www.sg-micro.com
TX20000.000
相关型号:
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