AM83135-001 [STMICROELECTRONICS]
RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS; 射频与微波晶体管S波段雷达应用
| 型号： | AM83135-001 |
| 厂家： | 
ST |
| 描述： | RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS |
| 文件： | 总5页 (文件大小：81K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AM83135-001
RF & MICROWAVE TRANSISTORS
S-BAND RADAR APPLICATIONS
.
.
.
.
.
.
.
.
REFRACTORY/GOLD METALLIZATION
EMITTER SITE BALLASTED
10:1 VSWR CAPABILITY
LOW THERMAL RESISTANCE
INPUT/OUTPUT MATCHING
OVERLAY GEOMETRY
METAL/CERAMIC HERMETIC PACKAGE
POUT = 1.0 W MIN. WITH 5.2 dB GAIN
.400 x .400 2NLFL (S042)
hermetically sealed
ORDER CODE
AM83135-001
BRANDING
83135-1
DESCRIPTION
PIN CONNECTION
The AM83135-001 device is a medium power sili-
con bipolar NPN transistor specifically designed
for S-Band radar pulsed driver applications.
This device is capable of operation over a wide
range of pulse widths, duty cycles and tempera-
tures and can withstand a 10:1 output VSWR.
Low RF thermal resistance, refractory/gold metal-
lization, and automatic wire bonding techniques
ensure high reliability and product consistency.
The AM83135-001 is supplied int the AMPAC
Hermetic/Ceramic package with internal In-
put/Output impedance matching circuitry, and is
intended for military and other high reliability ap-
1. Collector
2. Base
3. Emitter
4. Base
°
= 25 C)
ABSOLUTE MAXIMUM RATINGS (T
case
Symbol
PDISS
IC
Parameter
Value
Unit
W
11.5
0.45
Power Dissipation*
Device Current*
(TC ≤100°C)
A
VCC
TJ
Collector-Supply Voltage*
34
V
°
C
Junction Temperature (Pulsed RF Operation)
Storage Temperature
250
°
C
TSTG
−
65 to +200
THERMAL DATA
RTH(j-c)
Junction-Case Thermal Resistance*
13.0
°C/W
*Applies only to rated RF amplifier operation
1/5
February 3, 1997
AM83135-001
°
= 25 C)
ELECTRICAL SPECIFICATIONS (T
case
STATIC
Value
Typ.
Symbol
Test Conditions
Unit
Min.
45
Max.
—
—
—
1
BVCBO
BVEBO
BVCER
ICES
—
—
—
—
—
V
V
IC = 1mA
IE = 1mA
IC = 1mA
IE = 0mA
IC = 0mA
3.5
45
V
RBE = 10Ω
—
mA
—
V
BE = 0V
VCE = 30V
hFE
10
—
VCE = 5V
IC = 100mA
DYNAMIC
Symbol
POUT
Value
Typ.
Test Conditions
Unit
Min.
Max.
1.0
1.4
35
—
W
%
f = 3.1 — 3.5GHz
f = 3.1 — 3.5GHz
f = 3.1 — 3.5GHz
PIN = 0.3W
PIN = 0.3W
PIN = 0.3W
VCC = 30V
VCC = 30V
VCC = 30V
η
27
—
—
c
GP
5.2
6.7
dB
Note:
Pulse Width = 100 µS
Duty Cycle = 10%
2/5
AM83135-001
IMPEDANCE DATA
TYPICAL INPUT
IMPEDANCE
ZIN
ZIN
H
L
PIN = 0.3 W
VCC = 30 V
ZO = 50 ohms
FREQ.
ZIN (Ω)
ZCL (Ω)
46.0 + j 14.5
43.0 + j 10.0
38.0 + j 10.0
L = 3.1 GHz
M = 3.3 GHz
H = 3.5 GHz
12.0 − j 0.0
11.0 − j 6.5
9.0 − j 15.0
TYPICAL COLLECTOR
LOAD IMPEDANCE
L
ZCL
ZCL
PIN = 0.3 W
VCC = 30 V
ZO = 50 ohms
H
3/5
AM83135-001
TEST CIRCUIT
All dimensions are in inches.
Substrate material: .025 thick AI O
2
3
C1
C2
C3
L1
L2
:
:
:
:
:
1500 pF RF Feedthrough
100 MF Electrolytic
100 pF Chip
No. 26 Wire, 4 Turn .062 I.D.
Printed RF Choke
4/5
AM83135-001
PACKAGE MECHANICAL DATA
Ref.: Dwg. No. 12-0213 rev. A
UDCS No. 1011416
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use.
No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously
supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems
without express written approval of SGS-THOMSON Microelectronics.
1997 SGS-THOMSON Microelectronics - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
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5/5
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