BTA16B [STMICROELECTRONICS]
STANDARD TRIACS; 标准双向可控硅
| 型号： | BTA16B |
| 厂家： | 
ST |
| 描述： | STANDARD TRIACS |
| 文件： | 总5页 (文件大小：70K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BTA16 B
BTB16 B
STANDARD TRIACS
FEATURES
.
HIGH SURGE CURRENT CAPABILITY
COMMUTATION : (dV/dt)c > 10V/µs
BTA Family :
.
.
INSULATINGVOLTAGE = 2500V
(UL RECOGNIZED : E81734)
(RMS)
DESCRIPTION
A1
A2
The BTA/BTB16 B triac family are high perform-
ance glass passivated PNPN devices.
G
These parts are suitables for general purpose ap-
plications where high surge current capability is re-
quired. Application such as phase control and
static switching on inductive or resistive load.
TO220AB
(Plastic)
ABSOLUTE RATINGS (limiting values)
Symbol
Parameter
Value
Unit
I
RMS on-state current
(360° conduction angle)
BTA
BTB
Tc = 80 °C
Tc = 90 °C
tp = 8.3 ms
tp = 10 ms
tp = 10 ms
16
A
T(RMS)
I
Non repetitive surge peak on-state current
( Tj initial = 25°C )
170
160
128
10
A
TSM
2
I t
2
2
A s
I t value
dI/dt
Critical rate of rise of on-state current
Repetitive
F = 50 Hz
A/µs
Gate supply : I = 500mA di /dt = 1A/µs
G
G
Non
50
Repetitive
Tstg
Tj
Storage and operating junction temperature range
- 40 to + 150
- 40 to + 125
°C
°C
Tl
Maximum lead temperature for soldering during 10 s at 4.5 mm
from case
260
°C
Symbol
Parameter
BTA / BTB16-... B
Unit
400
600
700
800
V
V
Repetitive peak off-state voltage
Tj = 125 °C
400
600
700
800
V
DRM
RRM
1/5
March 1995
BTA16 B / BTB16 B
THERMAL RESISTANCES
Symbol
Parameter
Value
60
Unit
°C/W
°C/W
Rth (j-a)
Junction to ambient
Rth (j-c) DC Junction to case for DC
BTA
BTB
BTA
BTB
2.9
2.3
Rth (j-c) AC Junction to case for 360° conduction angle
2.2
°C/W
( F= 50 Hz)
1.75
GATE CHARACTERISTICS (maximum values)
P
= 1W
P
GM
= 10W (tp = 20 µs)
I
= 4A (tp = 20 µs)
V = 16V (tp = 20 µs).
GM
G (AV)
GM
ELECTRICAL CHARACTERISTICS
Symbol
Test Conditions
Quadrant
Suffix
B
Unit
I
V =12V (DC) R =33Ω
Tj=25°C
I-II-III
IV
MAX
MAX
MAX
MIN
50
mA
GT
D
L
100
1.5
0.2
2
V
V =12V (DC) R =33Ω
Tj=25°C
Tj=125°C
Tj=25°C
I-II-III-IV
I-II-III-IV
I-II-III-IV
V
V
GT
D
L
V
V =V
R =3.3kΩ
L
GD
D
DRM
DRM
tgt
V =V
I
G
= 500mA
TYP
µs
D
dI /dt = 3A/µs
G
I
I
=1.2 I
G GT
Tj=25°C
I-III-IV
II
TYP
40
70
mA
L
I
*
I = 500mA gate open
Tj=25°C
Tj=25°C
Tj=25°C
Tj=125°C
Tj=125°C
MAX
MAX
MAX
MAX
MIN
50
mA
V
H
T
V
*
I
= 22.5A tp= 380µs
TM
1.6
0.01
2
TM
I
I
V
V
Rated
Rated
mA
DRM
RRM
DRM
RRM
dV/dt *
Linear slope up to V =67%V
D
gate open
250
V/µs
V/µs
DRM
(dV/dt)c * (dI/dt)c = 7A/ms
Tj=125°C
MIN
10
* For either polarity of electrode A voltage with reference to electrode A .
2
1
2/5
BTA16 B / BTB16 B
Fig.1 : Maximum RMS power dissipation versus RMS
on-state current (F=50Hz).
(Curves are cut off by (dI/dt)c limitation)
Fig.2
:
Correlation between maximum RMS power
dissipation and maximum allowable temperatures (T
and T
contact (BTA).
amb
) for different thermal resistances heatsink +
case
Fig.3
:
Correlation between maximum RMS power
amb
) for different thermal resistances heatsink +
Fig.4 : RMS on-state current versus case temperature.
dissipation and maximum allowable temperatures (T
and T
case
contact (BTB).
Fig.5 : Relative variation of thermal impedance versus
Fig.6 : Relative variation of gate trigger current and
pulse duration.
holding current versus junction temperature.
Zth/Rth
1
Zth(j-c)
0.1
Zth(j-a)
tp(s)
1E+2 5E+2
0.01
1E-3
1E-2
1E-1
1E+0
1E+1
3/5
BTA16 B / BTB16 B
Fig.7 : Non Repetitive surge peak on-state current
versus number of cycles.
Fig.8 : Non repetitive surge peak on-state current for a
sinusoidal pulse with width 10ms, and
corresponding value of I t.
:
t
≤
2
Fig.9 : On-state characteristics (maximum values).
4/5
BTA16 B / BTB16 B
PACKAGE MECHANICAL DATA
TO220AB Plastic
REF.
DIMENSIONS
Millimeters
Inches
Min.
Min.
10.20
14.23
12.70
5.85
Max.
10.50
15.87
14.70
6.85
4.50
3.00
4.82
4.00
1.39
0.65
2.70
5.58
1.20
0.96
Max.
0.413
0.625
0.579
0.270
0.178
0.119
0.190
0.158
0.055
0.026
0.107
0.22
H
A
J
G
A
B
C
D
F
0.401
0.560
0.500
0.230
I
D
B
C
G
H
I
2.54
4.48
3.55
1.15
0.35
2.10
4.58
0.80
0.64
0.100
0.176
0.140
0.045
0.013
0.082
0.18
F
O
L
J
P
L
M
N
O
P
M
N
=
=
0.031
0.025
0.048
0.038
Cooling method : C
Marking : type number
Weight : 2.3 g
Recommended torque value : 0.8 m.N.
Maximum torque value : 1 m.N.
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability
for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may
result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics.
Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all
information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems
without express written approval of SGS-THOMSON Microelectronics.
1995 SGS-THOMSON Microelectronics - Printed in Italy - All rights reserved.
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Nether-
lands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A.
5/5
相关型号：
©2020 ICPDF网 联系我们和版权申明