STB12NM50FDT4 [STMICROELECTRONICS]
N-CHANNEL500V-0.32ohm-12ATO-220/FP/D2PAK/I2PAK/TO-247 FDmesh⑩ Power MOSFET with FAST DIODE; N-二CHANNEL500V - 0.32ohm - 12ATO -220 / FP / D2PAK / I2PAK / TO- 247 FDmesh⑩功率MOSFET，快速二极管
| 型号： | STB12NM50FDT4 |
| 厂家： | 
ST |
| 描述： | N-CHANNEL500V-0.32ohm-12ATO-220/FP/D2PAK/I2PAK/TO-247 FDmesh⑩ Power MOSFET with FAST DIODE |
| 文件： | 总14页 (文件大小：651K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STP12NM50FD-STP12NM50FDFP-STW14NM50FD
STB12NM50FD - STB12NM50FD-1
N-CHANNEL500V-0.32Ω-12ATO-220/FP/D2PAK/I2PAK/TO-247
FDmesh™ Power MOSFET (with FAST DIODE)
TYPE
V
R
I
D
Pw
DSS
DS(on)
STP12NM50FD
STP12NM50FDFP 500 V
STB12NM50FD
STB12NM50FD-1
STW14NM50FD
500 V
< 0.4 Ω
< 0.4 Ω
< 0.4 Ω
< 0.4 Ω
< 0.4 Ω
12 A
12 A
12 A
12 A
14 A
160 W
35 W
160 W
160 W
175 W
500 V
500 V
500 V
3
2
1
3
2
■
■
■
■
TYPICAL R (on) = 0.32 Ω
DS
HIGH dv/dt AND AVALANCHE CAPABILITIES
100% AVALANCHE TESTED
LOW INPUT CAPACITANCE AND GATE
CHARGE
1
TO-220
TO-220FP
TO-247
3
1
■
■
LOW GATE INPUT RESISTANCE
TIGHT PROCESS CONTROL AND HIGH
MANUFACTURING YIELDS
3
2
1
2
2
I PAK
D PAK
DESCRIPTION
INTERNAL SCHEMATIC DIAGRAM
The FDmesh™ associates all advantages of re-
duced on-resistance and fast switching with an in-
trinsic fast-recovery body diode. It is therefore
strongly recommended for bridge topologies, in par-
ticular ZVS phase-shift converters.
APPLICATIONS
■
ZVS PHASE-SHIFT FULL BRIDGE
CONVERTERS FOR SMPS AND WELDING
EQUIPMENT
ORDERING INFORMATION
SALES TYPE
MARKING
P12NM50FD
P12NM50FDFP
B12NM50FD
PACKAGE
TO-220
PACKAGING
TUBE
STP12NM50FD
STP12NM50FDFP
STB12NM50FD
TO-220FP
TUBE
2
TUBE
D PAK
2
STB12NM50FDT4
STB12NM50FD-1
STW14NM50FD
B12NM50FD
B12NM50FD
W14NM50FD
TAPE & REEL
TUBE
D PAK
2
I PAK
TO-247
TUBE
June 2002
1/14
STP12NM50FD / STP12NM50FDFP / STB12NM50FD / STB12NM50FD-1 / STW14NM50FD
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
TO-220 /
2
TO-220FP
TO-247
2
D PAK / I PAK
V
Drain-source Voltage (V = 0)
500
500
V
V
DS
GS
V
Drain-gate Voltage (R = 20 kΩ)
DGR
GS
V
Gate- source Voltage
± 30
12 (*)
7.5 (*)
48 (*)
35
V
GS
I
Drain Current (continuous) at T = 25°C
12
7.5
48
14
8.8
56
A
D
C
I
Drain Current (continuous) at T = 100°C
A
D
C
I
( )
Drain Current (pulsed)
A
DM
P
TOT
Total Dissipation at T = 25°C
160
1.28
175
1.4
W
C
Derating Factor
0.28
20
W/°C
V/ns
V
dv/dt (1)
Peak Diode Recovery voltage slope
Insulation Withstand Voltage (DC)
V
-
2500
ISO
T
T
stg
Operating Junction Temperature
Storage Temperature
°C
°C
j
- 65 to 150
- 65 to 150
( ) Pulse width limited by safe operating area
, T ≤ T
JMAX.
(1) I ≤12A, di/dt ≤ 400 µA, V ≤ V
SD
DD
(BR)DSS
j
(*) Limited only by maximum temperature allowed
THERMAL DATA
TO-220
2
TO-220FP TO-247
D PAK
2
I PAK
0.78
Rthj-case
Rthj-pcb
Thermal Resistance Junction-case Max
3.57
0.715 °C/W
°C/W
Thermal Resistance Junction-pcb Max
(When mounted on minimum Footprint)
30
Rthj-amb
Thermal Resistance Junction-ambient Max
62.5
30
°C/W
°C
T
l
300
Maximum Lead Temperature For Soldering Purpose
AVALANCHE CHARACTERISTICS
Symbol
Parameter
Max Value
Unit
I
AR
Avalanche Current, Repetitive or Not-Repetitive
6
A
(pulse width limited by T max)
j
E
Single Pulse Avalanche Energy
400
mJ
AS
(starting T = 25 °C, I = I , V = 50 V)
j
D
AR
DD
2/14
STP12NM50FD / STP12NM50FDFP / STB12NM50FD / STB12NM50FD-1 / STW14NM50FD
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
ON/OFF
Symbol
Parameter
Drain-source
Test Conditions
Min.
Typ.
Max.
Unit
V
I
D
= 1 mA, V = 0
500
V
(BR)DSS
GS
Breakdown Voltage
I
Zero Gate Voltage
V
V
= Max Rating
= Max Rating, T = 125 °C
1
10
µA
µA
DSS
DS
Drain Current (V = 0)
GS
DS
C
I
Gate-body Leakage
V
GS
= ± 30V
±100
nA
GSS
Current (V = 0)
DS
V
V
V
= V , I = 250µA
Gate Threshold Voltage
3
4
5
V
GS(th)
DS
GS
D
R
Static Drain-source On
Resistance
= 10V, I = 6A
0.32
0.4
Ω
DS(on)
GS
D
DYNAMIC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
fs
(1)
Forward Transconductance
V
DS
= 15 V I = 6 A
9.8
S
, D
C
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
DS
= 25V, f = 1 MHz, V = 0
1027
205
24
pF
pF
pF
iss
GS
C
oss
C
rss
R
G
Gate Input Resistance
f=1 MHz Gate DC Bias = 0
Test Signal Level = 20mV
Open Drain
3.7
Ω
SWITCHING ON
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
Turn-on Delay Time
Rise Time
V
= 250 V, I = 6 A
19
10
ns
ns
d(on)
DD
D
t
r
R = 4.7Ω V = 10 V
G GS
(Resistive Load see, Figure 3)
Q
Q
Q
V
V
= 400V, I = 12 A,
= 10V
38.5
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
27.5
8
12
nC
nC
nC
g
DD
D
gs
gd
GS
SWITCHING OFF
Symbol
Parameter
Test Conditions
Min.
Min.
Typ.
Max.
Unit
t
V
R
= 400 V, I = 12 A,
Off-voltage Rise Time
Fall Time
Cross-over Time
39
18
29
ns
ns
ns
r(Voff)
DD
D
t
f
= 4.7Ω, V = 10V
GS
(Inductive Load see, Figure 5)
G
t
c
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
Typ.
Max.
Unit
I
12
48
A
A
Source-drain Current
Source-drain Current (pulsed)
SD
(2)
I
SDM
V
(1)
I
I
= 12 A, V = 0
Forward On Voltage
1.5
V
SD
SD
GS
t
= 12 A, di/dt = 100A/µs
= 30V, T = 150°C
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
224
1.3
12
ns
µC
A
rr
SD
Q
V
DD
rr
RRM
j
I
(see test circuit, Figure 5)
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
3/14
STP12NM50FD / STP12NM50FDFP / STB12NM50FD / STB12NM50FD-1 / STW14NM50FD
Safe Operating Area For TO-220/D2PAK/I2PAK
Thermal Impedance For TO-220/D2PAK/I2PAK
Safe Operating Area For TO-220FP
Thermal Impedance For TO-220FP
Safe Operating Area For TO-247
Thermal Impedance For TO-247
4/14
STP12NM50FD / STP12NM50FDFP / STB12NM50FD / STB12NM50FD-1 / STW14NM50FD
Output Characteristics
Transfer Characteristics
Transconductance
Static Drain-source On Resistance
Gate Charge vs Gate-source Voltage
Capacitance Variations
5/14
STP12NM50FD / STP12NM50FDFP / STB12NM50FD / STB12NM50FD-1 / STW14NM50FD
Normalized Gate Threshold Voltage vs Temp.
Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
Normalized BVDSS vs Temperature
6/14
STP12NM50FD / STP12NM50FDFP / STB12NM50FD / STB12NM50FD-1 / STW14NM50FD
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuit For
Fig. 4: Gate Charge test Circuit
Resistive Load
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
7/14
STP12NM50FD / STP12NM50FDFP / STB12NM50FD / STB12NM50FD-1 / STW14NM50FD
TO-220 MECHANICAL DATA
mm
inch
TYP.
DIM.
MIN.
4.40
1.23
2.40
TYP.
MAX.
4.60
1.32
2.72
MIN.
0.173
0.048
0.094
MAX.
0.181
0.051
0.107
A
C
D
D1
E
1.27
0.050
0.49
0.61
1.14
1.14
4.95
2.4
0.70
0.88
1.70
1.70
5.15
2.7
0.019
0.024
0.044
0.044
0.194
0.094
0.393
0.027
0.034
0.067
0.067
0.203
0.106
0.409
F
F1
F2
G
G1
H2
L2
L4
L5
L6
L7
L9
DIA.
10.0
10.40
16.4
0.645
13.0
2.65
15.25
6.2
14.0
2.95
15.75
6.6
0.511
0.104
0.600
0.244
0.137
0.147
0.551
0.116
0.620
0.260
0.154
0.151
3.5
3.93
3.85
3.75
L2
Dia.
L5
L9
L7
L6
L4
P011C
8/14
STP12NM50FD / STP12NM50FDFP / STB12NM50FD / STB12NM50FD-1 / STW14NM50FD
TO-220FP MECHANICAL DATA
mm.
TYP
inch
TYP.
DIM.
MIN.
4.4
MAX.
4.6
2.7
2.75
0.7
1
MIN.
0.173
0.098
0.098
0.017
0.030
0.045
0.045
0.195
0.094
0.393
MAX.
0.181
0.106
0.108
0.027
0.039
0.067
0.067
0.204
0.106
0.409
A
B
2.5
D
2.5
E
0.45
0.75
1.15
1.15
4.95
2.4
F
F1
F2
G
1.7
1.7
5.2
2.7
10.4
G1
H
10
L2
L3
L4
L5
L6
L7
Ø
16
0.630
28.6
9.8
2.9
15.9
9
30.6
10.6
3.6
1.126
.0385
0.114
0.626
0.354
0.118
1.204
0.417
0.141
0.645
0.366
0.126
16.4
9.3
3
3.2
L3
L6
L7
1 2 3
L4
L5
L2
9/14
STP12NM50FD / STP12NM50FDFP / STB12NM50FD / STB12NM50FD-1 / STW14NM50FD
D2PAK MECHANICAL DATA
mm.
TYP
inch
TYP.
DIM.
MIN.
4.4
MAX.
4.6
MIN.
0.173
0.098
0.001
0.027
0.044
0.017
0.048
0.352
MAX.
0.181
0.106
0.009
0.036
0.067
0.023
0.053
0.368
A
A1
A2
B
2.49
0.03
0.7
2.69
0.23
0.93
1.7
B2
C
1.14
0.45
1.23
8.95
0.6
C2
D
1.36
9.35
D1
E
8
0.315
0.334
10
10.4
0.393
E1
G
8.5
4.88
15
5.28
15.85
1.4
0.192
0.590
0.050
0.055
0.094
0.208
0.625
0.055
0.068
0.126
L
L2
L3
M
1.27
1.4
1.75
3.2
2.4
R
0.4
0.015
V2
0º
8º
3
10/14
1
STP12NM50FD / STP12NM50FDFP / STB12NM50FD / STB12NM50FD-1 / STW14NM50FD
TO-262 (I2PAK) MECHANICAL DATA
mm
inch
TYP.
DIM.
MIN.
4.4
TYP.
MAX.
4.6
MIN.
0.173
0.098
0.027
0.044
0.017
0.048
0.352
0.094
0.393
0.515
0.137
0.050
MAX.
0.181
0.106
0.036
0.067
0.023
0.053
0.368
0.106
0.409
0.531
0.149
0.055
A
A1
B
2.49
0.7
2.69
0.93
1.7
B2
C
1.14
0.45
1.23
8.95
2.4
0.6
C2
D
1.36
9.35
2.7
e
E
10
10.4
13.6
3.78
1.4
L
13.1
3.48
1.27
L1
L2
L1
L2
D
L
P011P5/E
11/14
STP12NM50FD / STP12NM50FDFP / STB12NM50FD / STB12NM50FD-1 / STW14NM50FD
TO-247 MECHANICAL DATA
mm
inch
TYP.
DIM.
MIN.
4.7
2.2
0.4
1
TYP.
MAX.
5.3
MIN.
0.185
0.087
0.016
0.039
0.079
0.118
MAX.
0.209
0.102
0.031
0.055
0.094
0.134
A
D
2.6
E
0.8
F
1.4
F3
F4
G
2
2.4
3
3.4
10.9
0.429
H
15.3
19.7
14.2
15.9
20.3
14.8
0.602
0.776
0.559
0.626
0.779
0.582
L
L3
L4
L5
M
34.6
5.5
1.362
0.217
2
3
0.079
0.118
P025P
12/14
STP12NM50FD / STP12NM50FDFP / STB12NM50FD / STB12NM50FD-1 / STW14NM50FD
D2PAK FOOTPRINT
TUBE SHIPMENT (no suffix)*
TAPE AND REEL SHIPMENT (suffix ”T4”)*
REEL MECHANICAL DATA
mm
MIN. MAX. MIN. MAX.
330 12.992
inch
DIM.
A
B
C
D
G
N
T
1.5
0.059
12.8
20.2
24.4
100
13.2 0.504 0.520
0795
26.4 0.960 1.039
3.937
30.4
1.197
BASE QTY
BULK QTY
1000
TAPE MECHANICAL DATA
1000
mm
inch
DIM.
MIN. MAX. MIN. MAX.
10.5 10.7 0.413 0.421
15.7 15.9 0.618 0.626
A0
B0
D
1.5
1.6 0.059 0.063
D1
E
1.59 1.61 0.062 0.063
1.65 1.85 0.065 0.073
F
11.4
4.8
3.9
11.9
1.9
50
11.6 0.449 0.456
5.0 0.189 0.197
4.1 0.153 0.161
12.1 0.468 0.476
2.1 0.075 0.082
1.574
K0
P0
P1
P2
R
T
0.25 0.35 0.0098 0.0137
23.7 24.3 0.933 0.956
W
* on sales type
13/14
STP12NM50FD / STP12NM50FDFP / STB12NM50FD / STB12NM50FD-1 / STW14NM50FD
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from
its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or
systems without express written approval of STMicroelectronics.
© The ST logo is a registered trademark of STMicroelectronics
© 2002 STMicroelectronics - Printed in Italy - All Rights Reserved
STMicroelectronics GROUP OF COMPANIES
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Singapore - Spain - Sweden - Switzerland - United Kingdom - United States.
© http://www.st.com
14/14
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