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STB12NM50ND_09 [STMICROELECTRONICS]

N-channel 500V, 0.29 OHM, 11A, FDmesh II Power MOSFET (with fast diode) in D2PAK, DPAK, TO-220FP; N沟道500V ， 0.29欧姆， 11A ， FDmesh II功率MOSFET （具有快速二极管）的D2PAK ， DPAK ， TO- 220FP
STB12NM50ND_09
型号： STB12NM50ND_09
厂家： ST    ST
描述：

N-channel 500V, 0.29 OHM, 11A, FDmesh II Power MOSFET (with fast diode) in D2PAK, DPAK, TO-220FP
N沟道500V ， 0.29欧姆， 11A ， FDmesh II功率MOSFET （具有快速二极管）的D2PAK ， DPAK ， TO- 220FP

二极管
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中文：  中文翻译
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STB12NM50ND  
STD12NM50ND, STF12NM50ND  
N-channel 500 V, 0.29 Ω, 11 A, FDmesh™ II Power MOSFET  
(with fast diode) in D2PAK, DPAK, TO-220FP  
Features  
Type  
VDSS (@Tjmax) RDS(on) max ID  
STB12NM50ND  
STD12NM50ND  
STF12NM50ND  
550 V  
550 V  
550 V  
0.38 Ω  
0.38 Ω  
0.38 Ω  
11 A  
11 A  
11 A  
3
3
3
2
1
1
1
■ 100% avalanche tested  
D2PAK  
DPAK  
TO-220FP  
■ Low input capacitance and gate charge  
■ Low gate input resistance  
Application  
■ Switching applications  
Figure 1.  
Internal schematic diagram  
Description  
FDmesh™ technology combines the MDmesh™  
features with an intrinsic fast-recovery body  
diode. The resulting product has reduced on-  
resistance and fast switching commutations,  
making it especially suitable for bridge topologies  
$ꢅꢆꢇ  
where low t is required.  
rr  
'ꢅꢁꢇ  
3ꢅꢈꢇ  
!-ꢀꢁꢂꢃꢄVꢁ  
Table 1.  
Device summary  
Order codes  
Marking  
Package  
Packaging  
STB12NM50ND  
STD12NM50ND  
STF12NM50ND  
12NM50ND  
12NM50ND  
12NM50ND  
D2PAK  
DPAK  
Tape and reel  
Tape and reel  
Tube  
TO-220FP  
June 2009  
Doc ID 14936 Rev 2  
1/16  
www.st.com  
16  
Contents  
STB12NM50ND, STD12NM50ND, STF12NM50ND  
Contents  
1
2
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3  
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4  
2.1  
Electrical characteristics (curves)  
. . . . . . . . . . . . . . . . . . . . . . . . . . . . 6  
3
4
5
6
Test circuits  
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9  
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10  
Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13  
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15  
2/16  
Doc ID 14936 Rev 2  
STB12NM50ND, STD12NM50ND, STF12NM50ND  
Electrical ratings  
1
Electrical ratings  
Table 2.  
Symbol  
Absolute maximum ratings  
Value  
DPAK  
Parameter  
Unit  
D²PAK  
TO-220FP  
VDS  
VGS  
ID  
Drain-source voltage (VGS=0)  
Gate-source voltage  
500  
25  
V
V
Drain current (continuous) at TC = 25 °C  
Drain current (continuous) at TC = 100 °C  
Drain current (pulsed)  
11  
6.9  
44  
11 (1)  
6.9 (1)  
44 (1)  
25  
A
A
ID  
(2)  
IDM  
A
PTOT  
VISO  
Total dissipation at TC = 25 °C  
100  
W
Insulation withstand voltage (RMS) from  
all three leads to external heat sink  
(t=1 s;TC=25 °C)  
2500  
V
dv/dt (3) Peak diode recovery voltage slope  
40  
V/ns  
°C  
Tstg  
Tj  
Storage temperature  
-55 to 150  
150  
Operating junction temperature  
°C  
1. Limited only by maximum temperature allowed  
2. Pulse width limited by safe operating area  
3. ISD ≤ 11 A, di/dt ≤ 600 A/µs, VDD = 80% V(BR)DSS  
Table 3.  
Symbol  
Thermal data  
Parameter  
Value  
DPAK  
Unit  
D²PAK  
TO-220FP  
Rthj-case Thermal resistance junction-case max  
Rthj-pcb Thermal resistance junction-pcb max  
Rthj-amb Thermal resistance junction-amb max  
1.25  
5
°C/W  
°C/W  
°C/W  
30  
50  
62.5  
Maximum lead temperature for soldering  
purposes  
Tl  
300  
°C  
Table 4.  
Symbol  
Avalanche characteristics  
Parameter  
Max value  
Unit  
Avalanche current, repetitive or not-repetitive  
(pulse width limited by Tj max)  
IAS  
5
A
Single pulse avalanche energy  
EAS  
350  
mJ  
(starting Tj = 25 °C, ID = IAS, VDD = 50 V)  
Doc ID 14936 Rev 2  
3/16  
Electrical characteristics  
STB12NM50ND, STD12NM50ND, STF12NM50ND  
2
Electrical characteristics  
(T  
= 25 °C unless otherwise specified)  
CASE  
Table 5.  
Symbol  
On/off states  
Parameter  
Test conditions  
Min. Typ. Max. Unit  
Drain-source breakdown  
voltage  
V(BR)DSS  
ID = 1 mA, VGS= 0  
500  
V
V
DD = 400 V,ID = 11 A,  
dv/dt(1) Drain-source voltage slope  
44  
V/ns  
VGS = 10 V  
VDS = Max rating,  
1
µA  
µA  
Zero gate voltage drain  
IDSS  
current (VGS = 0)  
VDS = Max rating,@125 °C  
100  
Gate body leakage current  
IGSS  
VGS = 20 V  
100  
5
nA  
V
(VDS = 0)  
VGS(th) Gate threshold voltage  
VDS= VGS, ID = 250 µA  
3
4
Static drain-source on  
resistance  
RDS(on)  
VGS= 10 V, ID= 5.5 A  
0.29  
0.38  
Ω
1. Value measured at turn off under inductive load  
Table 6.  
Symbol  
Dynamic  
Parameter  
Test conditions  
Min. Typ. Max. Unit  
(1)  
gfs  
Forward transconductance VDS =15 V, ID= 5.5 A  
Input capacitance  
-
8
-
S
Ciss  
Coss  
Crss  
850  
48  
5
pF  
pF  
pF  
VDS = 50 V, f =1 MHz,  
VGS = 0  
Output capacitance  
-
-
Reverse transfer  
capacitance  
Equivalent output  
capacitance  
(2)  
Coss eq.  
VGS = 0, VDS = 0 to 400 V  
-
-
100  
4.5  
-
-
pF  
f=1 MHz Gate DC Bias=0  
Test signal level=20 mV  
open drain  
Rg  
Gate input resistance  
Ω
Qg  
Qgs  
Qgd  
Total gate charge  
Gate-source charge  
Gate-drain charge  
VDD = 400 V, ID = 11 A  
VGS = 10 V  
30  
6
nC  
nC  
nC  
-
-
Figure 19  
17  
1. Pulsed: pulse duration = 300 µs, duty cycle 1.5%  
2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS  
increases from 0 to 80% VDSS  
4/16  
Doc ID 14936 Rev 2  
STB12NM50ND, STD12NM50ND, STF12NM50ND  
Electrical characteristics  
Min. Typ. Max. Unit  
Table 7.  
Symbol  
Switching times  
Parameter  
Test conditions  
td(on)  
tr  
td(off)  
tf  
Turn-on delay time  
Rise time  
12  
15  
40  
17  
ns  
ns  
ns  
ns  
VDD = 250 V, ID = 5.5 A,  
RG = 4.7 Ω, VGS = 10 V  
Figure 18  
-
-
Turn-off delay time  
Fall time  
Table 8.  
Symbol  
Source drain diode  
Parameter  
Test conditions  
Min. Typ. Max. Unit  
ISD  
Source-drain current  
11  
44  
A
A
-
-
(1)  
ISDM  
Source-drain current (pulsed)  
(2)  
VSD  
Forward on voltage  
ISD = 11 A, VGS=0  
1.6  
V
trr  
Reverse recovery time  
Reverse recovery charge  
Reverse recovery current  
122  
650  
11  
ns  
nC  
A
ISD = 11 A, di/dt =100 A/µs,  
VDD = 100 V  
Qrr  
-
-
Figure 20  
IRRM  
trr  
Reverse recovery time  
Reverse recovery charge  
Reverse recovery current  
160  
940  
12  
ns  
nC  
A
VDD = 100 V  
Qrr  
di/dt =100 A/µs, ISD = 11 A  
Tj = 150 °C, Figure 20  
IRRM  
1. Pulse width limited by safe operating area  
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%  
Doc ID 14936 Rev 2  
5/16  
Electrical characteristics  
STB12NM50ND, STD12NM50ND, STF12NM50ND  
2.1  
Electrical characteristics (curves)  
Figure 2.  
Safe operating area for D²PAK  
Figure 3.  
Figure 5.  
Figure 7.  
Thermal impedance for D²PAK  
Thermal impedance for TO-220FP  
Thermal impedance for DPAK  
AM03984v1  
I
D
(A)  
100  
10µs  
100µs  
10  
1ms  
Tj=150°C  
Tc=25°C  
1
10ms  
Sinlge  
pulse  
0.1  
10  
VDS(V)  
0.1  
1
100  
Figure 4.  
Safe operating area for TO-220FP  
AM03986v1  
I
D
(A)  
10  
10µs  
100µs  
1ms  
1
10ms  
Tj=150°C  
Tc=25°C  
0.1  
Sinlge  
pulse  
0.01  
10  
VDS(V)  
0.1  
1
100  
Figure 6.  
Safe operating area for DPAK  
AM03985v1  
I
D
(A)  
100  
10µs  
100µs  
10  
1ms  
Tj=150°C  
Tc=25°C  
1
10ms  
Sinlge  
pulse  
0.1  
10  
VDS(V)  
0.1  
1
100  
6/16  
Doc ID 14936 Rev 2  
STB12NM50ND, STD12NM50ND, STF12NM50ND  
Electrical characteristics  
Figure 8.  
Output characteristics  
Figure 9.  
Transfer characteristics  
AM03987v1  
AM03988v1  
I
D
(A)  
I
D
(A)  
V
GS=10V  
20  
15  
10  
20  
15  
10  
V
DS=20V  
7V  
6V  
5
0
5
0
5V  
5
2
25  
20  
25  
V
DS(V)  
8
10 VGS(V)  
0
10  
15  
0
4
6
Figure 10. Transconductance  
Figure 11. Static drain-source on resistance  
AM03989v1  
AM03990v1  
G
(S)  
FS  
R
DS(on)  
(Ω)  
TJ=-50°C  
0.35  
8.5  
TJ=25°C  
0.33  
0.31  
6.5  
4.5  
TJ=150°C  
0.29  
2.5  
0.5  
0.27  
0.25  
ID(A)  
4
8
6
10  
2
10  
20  
ID(A)  
0
15  
25  
0
5
Figure 12. Gate charge vs gate-source voltage Figure 13. Capacitance variations  
AM03991v1  
AM03992v1  
V
GS  
C
(V)  
(pF)  
V
GS  
V
DS  
400  
V
DD=400V  
10  
I
D=11A  
350  
300  
250  
200  
1000  
100  
Ciss  
8
6
4
Coss  
Crss  
150  
100  
50  
10  
1
2
0
0
(nC)  
10  
20  
0.1  
100  
25  
30  
Q
g
VDS(V)  
0
5
15  
1
10  
Doc ID 14936 Rev 2  
7/16  
Electrical characteristics  
STB12NM50ND, STD12NM50ND, STF12NM50ND  
Figure 14. Normalized gate threshold voltage Figure 15. Normalized on resistance vs  
vs temperature temperature  
AM03993v1  
AM03394v1  
V
GS(th)  
RDS(on)  
(norm)  
1.10  
(norm)  
2.0  
1.9  
1.7  
1.5  
1.3  
1.1  
1.00  
0.90  
0.9  
0.7  
0.5  
0.80  
0.70  
-50  
-50  
-25  
-25  
0
25 50 75  
T
J(°C)  
0
25 50 75  
TJ(°C)  
100  
100  
Figure 16. Source-drain diode forward  
characteristics  
Figure 17. Normalized B  
vs temperature  
VDSS  
AM03996v1  
AM03995v1  
VSD  
BVDSS  
(V)  
(norm)  
1.07  
TJ=-50°C  
1.2  
1.05  
1.0  
1.03  
0.8  
TJ=150°C  
1.01  
0.99  
0.97  
0.6  
0.4  
T
J
=25°C  
0.2  
0
0.95  
0.93  
0
-50  
-25  
10  
20  
30  
40  
50 ISD(A)  
0
25 50 75  
TJ(°C)  
100  
8/16  
Doc ID 14936 Rev 2  
STB12NM50ND, STD12NM50ND, STF12NM50ND  
Test circuits  
3
Test circuits  
Figure 18. Switching times test circuit for  
resistive load  
Figure 19. Gate charge test circuit  
VDD  
12V  
47kΩ  
1kΩ  
100nF  
2200  
3.3  
µF  
RL  
µF  
IG=CONST  
VDD  
100Ω  
Vi=20V=VGMAX  
D.U.T.  
VG  
VD  
RG  
VGS  
2200  
µF  
D.U.T.  
2.7kΩ  
47kΩ  
PW  
1kΩ  
PW  
AM01468v1  
AM01469v1  
Figure 20. Test circuit for inductive load  
switching and diode recovery times  
Figure 21. Unclamped inductive load test  
circuit  
L
A
A
A
B
D
FAST  
DIODE  
L=100µH  
VD  
G
2200  
µF  
D.U.T.  
B
3.3  
µF  
VDD  
S
3.3  
µF  
1000  
µF  
B
VDD  
25  
Ω
ID  
D
G
RG  
S
Vi  
D.U.T.  
Pw  
AM01470v1  
AM01471v1  
Figure 22. Unclamped inductive waveform  
Figure 23. Switching time waveform  
ton  
toff  
tdoff  
V(BR)DSS  
tr  
tf  
tdon  
VD  
90%  
10%  
90%  
IDM  
10%  
VDS  
ID  
0
0
VDD  
VDD  
90%  
VGS  
10%  
AM01472v1  
AM01473v1  
Doc ID 14936 Rev 2  
9/16  
Package mechanical data  
STB12NM50ND, STD12NM50ND, STF12NM50ND  
4
Package mechanical data  
In order to meet environmental requirements, ST offers these devices in different grades of  
®
®
ECOPACK packages, depending on their level of environmental compliance. ECOPACK  
specifications, grade definitions and product status are available at: www.st.com. ECOPACK  
is an ST trademark.  
10/16  
Doc ID 14936 Rev 2  
STB12NM50ND, STD12NM50ND, STF12NM50ND  
Package mechanical data  
TO-252 (DPAK) mechanical data  
mm.  
typ  
DIM.  
min.  
2.20  
0.90  
0.03  
0.64  
5.20  
0.45  
0.48  
6.00  
max.  
2.40  
1.10  
0.23  
0.90  
5.40  
0.60  
0.60  
6.20  
A
A1  
A2  
b
b4  
c
c2  
D
D1  
E
5.10  
6.40  
6.60  
E1  
e
4.70  
2.28  
e1  
H
4.40  
9.35  
1
4.60  
10.10  
L
L1  
L2  
L4  
R
2.80  
0.80  
0.60  
0 o  
1
0.20  
8 o  
V2  
0068772_G  
Doc ID 14936 Rev 2  
11/16  
Package mechanical data  
STB12NM50ND, STD12NM50ND, STF12NM50ND  
DꢀPAK (TO-263) mechanical data  
mm  
Typ  
inch  
Typ  
Dim  
Min  
Max  
Min  
Max  
0.181  
A
A1  
b
4.40  
0.03  
0.70  
1.14  
0.45  
1.23  
8.95  
7.50  
10  
4.60  
0.23  
0.93  
1.70  
0.60  
1.36  
9.35  
0.173  
0.001  
0.027  
0.045  
0.017  
0.048  
0.352  
0.295  
0.394  
0.334  
0.009  
0.037  
0.067  
0.024  
0.053  
0.368  
b2  
c
c2  
D
D1  
E
10.40  
0.409  
E1  
e
8.50  
2.54  
0.1  
e1  
H
4.88  
15  
5.28  
15.85  
2.69  
2.79  
1.40  
1.75  
0.192  
0.590  
0.099  
0.090  
0.05  
0.208  
0.624  
0.106  
0.110  
0.055  
0.069  
J1  
L
2.49  
2.29  
1.27  
1.30  
L1  
L2  
R
0.051  
0.4  
0.016  
V2  
0°  
8°  
0°  
8°  
0079457_M  
12/16  
Doc ID 14936 Rev 2  
STB12NM50ND, STD12NM50ND, STF12NM50ND  
Packaging mechanical data  
5
Packaging mechanical data  
2
D PAK FOOTPRINT  
TAPE AND REEL SHIPMENT  
REEL MECHANICAL DATA  
mm  
MIN. MAX. MIN. MAX.  
330 12.992  
inch  
DIM.  
A
B
C
D
G
N
T
1.5  
12.8  
20.2  
24.4  
100  
0.059  
13.2 0.504 0.520  
0795  
26.4 0.960 1.039  
3.937  
30.4  
1.197  
BASE QTY  
BULK QTY  
1000  
TAPE MECHANICAL DATA  
1000  
mm  
inch  
DIM.  
MIN. MAX. MIN. MAX.  
10.5 10.7 0.413 0.421  
15.7 15.9 0.618 0.626  
A0  
B0  
D
1.5  
1.6 0.059 0.063  
D1  
E
1.59 1.61 0.062 0.063  
1.65 1.85 0.065 0.073  
F
11.4  
4.8  
3.9  
11.9  
1.9  
50  
11.6 0.449 0.456  
5.0 0.189 0.197  
4.1 0.153 0.161  
12.1 0.468 0.476  
2.1 0.075 0.082  
1.574  
K0  
P0  
P1  
P2  
R
T
0.25 0.35 0.0098 0.0137  
23.7 24.3 0.933 0.956  
W
* on sales type  
Doc ID 14936 Rev 2  
13/16  
Packaging mechanical data  
STB12NM50ND, STD12NM50ND, STF12NM50ND  
DPAK FOOTPRINT  
All dimensions are in millimeters  
TAPE AND REEL SHIPMENT  
REEL MECHANICAL DATA  
mm  
MIN. MAX. MIN. MAX.  
330 12.992  
inch  
DIM.  
A
B
C
D
G
N
T
1.5  
12.8  
20.2  
16.4  
50  
0.059  
13.2 0.504 0.520  
0.795  
18.4 0.645 0.724  
1.968  
22.4  
0.881  
BASE QTY  
BULK QTY  
2500  
TAPE MECHANICAL DATA  
2500  
mm  
MIN. MAX. MIN. MAX.  
6.8 0.267 0.275  
10.4 10.6 0.409 0.417  
12.1 0.476  
inch  
DIM.  
A0  
B0  
B1  
D
7
1.5  
1.5  
1.6 0.059 0.063  
0.059  
D1  
E
1.65 1.85 0.065 0.073  
7.4 7.6 0.291 0.299  
2.55 2.75 0.100 0.108  
F
K0  
P0  
P1  
P2  
R
3.9  
7.9  
1.9  
40  
4.1 0.153 0.161  
8.1 0.311 0.319  
2.1 0.075 0.082  
1.574  
W
15.7  
16.3 0.618 0.641  
14/16  
Doc ID 14936 Rev 2  
STB12NM50ND, STD12NM50ND, STF12NM50ND  
Revision history  
6
Revision history  
Table 9.  
Date  
Document revision history  
Revision  
Changes  
23-Sep-2008  
10-Jun-2009  
1
2
First release  
Added new package, mechanical data: TO-220FP  
Doc ID 14936 Rev 2  
15/16  
STB12NM50ND, STD12NM50ND, STF12NM50ND  
Please Read Carefully:  
Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the  
right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any  
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