STB12NM50NT4 [STMICROELECTRONICS]
11A, 500V, 0.38ohm, N-CHANNEL, Si, POWER, MOSFET, D2PAK, 3 PIN;
| 型号： | STB12NM50NT4 |
| 厂家： | 
ST |
| 描述： | 11A, 500V, 0.38ohm, N-CHANNEL, Si, POWER, MOSFET, D2PAK, 3 PIN 开关 脉冲 晶体管 |
| 文件： | 总12页 (文件大小：324K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STP12NM50N - STF12NM50N
STB12NM50N - STD12NM50N
N-CHANNEL 500V - 0.33 Ω - 11 A TO-220/FP/D2PAK/DPAK
SECOND GENERATION MDmesh™ MOSFET
TARGET SPECIFICATION
Table 1: General Features
Figure 1: Package
TYPE
V
R
I
D
DSS
DS(on)
STB12NM50N
STD12NM50N
STF12NM50N
STP12NM50N
500 V
500 V
500 V
500 V
< 0.38 Ω
< 0.38 Ω
< 0.38 Ω
< 0.38 Ω
11 A
11 A
11 A (*)
11 A
3
1
3
2
1
2
■ WORLD’S LOWEST ON RESISTANCE
■ TYPICAL R (on) = 0.33Ω
D PAK
TO-220
DS
■ 100% AVALANCHE TESTED
■ LOW INPUT CAPACITANCE AND GATE
CHARGE
■ LOW GATE INPUT RESISTANCE
3
1
3
2
1
DESCRIPTION
DPAK
TO-220FP
The STP12NM50N is realized with the second
generation of MDmesh Technology. This revolu-
tionary MOSFET associates a new vertical struc-
ture to the Company's strip layout to yield the
world's lowest on-resistance and gate charge. It is
therefore suitable for the most demanding high ef-
ficiency converters
Figure 2: Internal Schematic Diagram
APPLICATIONS
The MDmesh™ II family is very suitable for in-
creasing power density of high voltage converters
allowing system miniaturization and higher effi-
ciencies.
Table 2: Order Codes
SALES TYPE
STB12NM50NT4
STD12NM50NT4
STF12NM50N
STP12NM50N
MARKING
B12NM50N
D12NM50N
F12NM50N
P12NM50N
PACKAGE
PACKAGING
TAPE & REEL
TAPE & REEL
TUBE
2
D PAK
DPAK
TO-220FP
TO-220
TUBE
Rev. 1
May 2005
1/12
This is preliminary information on a new product foreseen to be developed. Details are subject to change without notice.
STP12NM50N - STF12NM50N - STB12NM50N - STD12NM50N
Table 3: Absolute Maximum ratings
Symbol
Parameter
Value
TO-220/D PAK/DPAK
500
Unit
2
TO-220FP
V
Drain-source Voltage (V = 0)
V
V
DS
GS
V
Drain-gate Voltage (R = 20 kΩ)
500
±30
DGR
GS
V
GS
Gate- source Voltage
V
I
Drain Current (continuous) at T = 25°C
11
6.7
44
11 (*)
6.7 (*)
44 (*)
25
A
D
C
I
D
Drain Current (continuous) at T = 100°C
A
C
I
( )
Drain Current (pulsed)
A
DM
P
Total Dissipation at T = 25°C
100
0.8
W
TOT
C
Derating Factor
0.2
W/°C
V/ns
V
dv/dt(1)
Viso
Peak Diode Recovery voltage slope
Insulation Winthstand Voltage (DC)
Storage Temperature
TBD
--
2500
T
stg
–55 to 150
°C
150
T
Max. Operating Junction Temperature
j
( ) Pulse width limited by safe operating area
(*) Limited only by maximum temperature allowed
(1) I ≤ 11 A, di/dt ≤ 400 A/µs, V ≤ V
SD
DD
(BR)DSS
Table 4: Thermal Data
TO-220/D²PAK
DPAK
TO-220FP
Rthj-case
Rthj-amb
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
1.25
5
°C/W
°C/W
62.5
100
300
62.5
T
Maximum Lead Temperature For Soldering
Purpose
l
°C
Table 5: Avalanche Characteristics
Symbol
Parameter
Max Value
Unit
I
Avalanche Current, Repetitive or Not-Repetitive
TBD
A
AR
(pulse width limited by T max)
j
E
Single Pulse Avalanche Energy
TBD
mJ
AS
(starting T = 25 °C, I = I , V = 50 V)
j
D
AR
DD
ELECTRICAL CHARACTERISTICS (T
=25°C UNLESS OTHERWISE SPECIFIED)
CASE
Table 6: On/Off
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
Drain-source
I
D
= 1mA, V = 0
500
V
(BR)DSS
GS
Breakdown Voltage
Zero Gate Voltage
I
V
V
= Max Rating
= Max Rating, T = 125 °C
1
10
µA
µA
DSS
DS
Drain Current (V = 0)
GS
DS
C
I
Gate-body Leakage
V
GS
= ± 30V
±100
µA
GSS
Current (V = 0)
DS
V
V
V
= V , I = 250 µA
Gate Threshold Voltage
2
3
4
V
GS(th)
DS
GS
D
R
Static Drain-source On
Resistance
= 10V, I = 5.5A
0.33
0.38
Ω
DS(on)
GS
D
2/12
STP12NM50N - STF12NM50N - STB12NM50N - STD12NM50N
ELECTRICAL CHARACTERISTICS (CONTINUED)
Table 7: Dynamic
Symbol
Parameter
Test Conditions
15 V I =5.5A
Min.
Typ.
Max.
Unit
g
fs
(1)
Forward Transconductance
V
DS
TBD
S
, D
C
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
= 25V, f = 1 MHz, V = 0
880
205
26
pF
pF
pF
iss
DS
GS
C
oss
C
rss
C
(*) Equivalent Output
Capacitance
V
V
= 0V, V = 0V to 400V
TBD
pF
oss eq.
GS
DS
t
t
Turn-on Delay Time
Rise Time
Off-voltageRise Time
Fall Time
=250 V, I = 5.5 A
TBD
TBD
TBD
TBD
ns
ns
ns
ns
d(on)
DD
D
t
r
R = 4.7Ω V = 10 V
G GS
(see Figure 4)
d(off)
t
f
Q
V
V
= 400V, I =11 A,
= 10V,
30
TBD
TBD
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
nC
nC
nC
g
DD
D
Q
gs
gd
GS
Q
(see Figure 7)
R
Gate Input Resistance
f=1MHz Gate DC Bias=0
Test Signal Level=20mV
Open Drain
1.6
Ω
g
(*) C
is defined as a constant equivalent capacitance giving the same charging time as C
when V increases from 0 to 80% V
oss DS DSS
oss eq.
Table 8: Source Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
11
44
A
A
Source-drain Current
Source-drain Current (pulsed)
SD
I
SDM
V
(1)
I
I
= 11 A, V = 0
Forward On Voltage
1.3
V
SD
SD
GS
t
rr
= 11 A, di/dt = 100 A/µs
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
TBD
TBD
TBD
ns
µC
A
SD
Q
V
= 100 V, T = 25°C
rr
DD
j
I
(see Figure 5)
RRM
t
Q
I
V
= 11A, di/dt = 100 A/µs
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
TBD
TBD
TBD
ns
µC
A
rr
SD
= 100 V, T = 150°C
rr
DD
j
I
(see Figure 5)
RRM
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
3/12
STP12NM50N - STF12NM50N - STB12NM50N - STD12NM50N
Figure 3: Unclamped Inductive Load Test Cir-
cuit
Figure 6: Unclamped Inductive Wafeform
Figure 4: Switching Times Test Circuit For Re-
sistive Load
Figure 7: Gate Charge Test Circuit
Figure 5: Test Circuit For Inductive Load
Switching and Diode Recovery Times
4/12
STP12NM50N - STF12NM50N - STB12NM50N - STD12NM50N
TO-220 MECHANICAL DATA
mm.
TYP
inch
TYP.
DIM.
MIN.
4.40
0.61
1.15
0.49
15.25
10
MAX.
4.60
0.88
1.70
0.70
15.75
10.40
2.70
5.15
1.32
6.60
2.72
14
MIN.
0.173
0.024
0.045
0.019
0.60
MAX.
0.181
0.034
0.066
0.027
0.620
0.409
0.106
0.202
0.052
0.256
0.107
0.551
0.154
A
b
b1
c
D
E
0.393
0.094
0.194
0.048
0.244
0.094
0.511
0.137
e
2.40
4.95
1.23
6.20
2.40
13
e1
F
H1
J1
L
L1
L20
L30
øP
Q
3.50
3.93
16.40
28.90
0.645
1.137
3.75
2.65
3.85
2.95
0.147
0.104
0.151
0.116
5/12
STP12NM50N - STF12NM50N - STB12NM50N - STD12NM50N
TO-220FP MECHANICAL DATA
mm.
inch
TYP.
DIM.
MIN.
4.4
TYP
MAX.
4.6
2.7
2.75
0.7
1
MIN.
0.173
0.098
0.098
0.017
0.030
0.045
0.045
0.195
0.094
0.393
MAX.
0.181
0.106
0.108
0.027
0.039
0.067
0.067
0.204
0.106
0.409
A
B
2.5
D
2.5
E
0.45
0.75
1.15
1.15
4.95
2.4
F
F1
F2
G
1.7
1.7
5.2
2.7
10.4
G1
H
10
L2
L3
L4
L5
L6
L7
Ø
16
0.630
28.6
9.8
2.9
15.9
9
30.6
10.6
3.6
1.126
.0385
0.114
0.626
0.354
0.118
1.204
0.417
0.141
0.645
0.366
0.126
16.4
9.3
3
3.2
L3
L6
L7
1 2
L4
3
L5
L2
6/12
STP12NM50N - STF12NM50N - STB12NM50N - STD12NM50N
TO-252 (DPAK) MECHANICAL DATA
mm
inch
TYP.
DIM.
MIN.
2.20
0.90
0.03
0.64
5.20
0.45
0.48
6.00
6.40
4.40
9.35
TYP.
MAX.
2.40
1.10
0.23
0.90
5.40
0.60
0.60
6.20
6.60
4.60
10.10
MIN.
0.087
0.035
0.001
0.025
0.204
0.018
0.019
0.236
0.252
0.173
0.368
MAX.
0.094
0.043
0.009
0.035
0.213
0.024
0.024
0.244
0.260
0.181
0.398
A
A1
A2
B
B2
C
C2
D
E
G
H
L2
L4
V2
0.8
0.031
0.60
0o
1.00
8o
0.024
0o
0.039
0o
P032P_B
7/12
STP12NM50N - STF12NM50N - STB12NM50N - STD12NM50N
D2PAK MECHANICAL DATA
mm.
inch
TYP.
DIM.
MIN.
4.4
TYP
MAX.
4.6
MIN.
0.173
0.098
0.001
0.027
0.044
0.017
0.048
0.352
MAX.
0.181
0.106
0.009
0.036
0.067
0.023
0.053
0.368
A
A1
A2
B
2.49
0.03
0.7
2.69
0.23
0.93
1.7
B2
C
1.14
0.45
1.23
8.95
0.6
C2
D
1.36
9.35
D1
E
8
0.315
0.334
10
10.4
0.393
E1
G
8.5
4.88
15
5.28
15.85
1.4
0.192
0.590
0.050
0.055
0.094
0.208
0.625
0.055
0.068
0.126
L
L2
L3
M
1.27
1.4
1.75
3.2
2.4
R
0.4
0.015
V2
0º
4º
3
8/12
STP12NM50N - STF12NM50N - STB12NM50N - STD12NM50N
DPAK FOOTPRINT
All dimensions are in millimeters
TAPE AND REEL SHIPMENT
REEL MECHANICAL DATA
mm
MIN. MAX. MIN. MAX.
330 12.992
inch
DIM.
A
B
C
D
G
N
T
1.5
12.8
20.2
16.4
50
0.059
13.2 0.504 0.520
0.795
18.4 0.645 0.724
1.968
22.4
0.881
BASE QTY
BULK QTY
2500
TAPE MECHANICAL DATA
2500
mm
MIN. MAX. MIN. MAX.
6.8 0.267 0.275
10.4 10.6 0.409 0.417
12.1 0.476
inch
DIM.
A0
B0
B1
D
7
1.5
1.5
1.6 0.059 0.063
0.059
D1
E
1.65 1.85 0.065 0.073
7.4 7.6 0.291 0.299
2.55 2.75 0.100 0.108
F
K0
P0
P1
P2
R
3.9
7.9
1.9
40
4.1 0.153 0.161
8.1 0.311 0.319
2.1 0.075 0.082
1.574
W
15.7
16.3 0.618 0.641
9/12
STP12NM50N - STF12NM50N - STB12NM50N - STD12NM50N
2
D PAK FOOTPRINT
TAPE AND REEL SHIPMENT
REEL MECHANICAL DATA
mm
MIN. MAX. MIN. MAX.
330 12.992
inch
DIM.
A
B
1.5
0.059
C
D
G
N
T
12.8
20.2
24.4
100
13.2 0.504 0.520
0795
26.4 0.960 1.039
3.937
30.4
1.197
BASE QTY
BULK QTY
1000
TAPE MECHANICAL DATA
1000
mm
inch
DIM.
MIN. MAX. MIN. MAX.
10.5 10.7 0.413 0.421
15.7 15.9 0.618 0.626
A0
B0
D
1.5
1.6 0.059 0.063
D1
E
1.59 1.61 0.062 0.063
1.65 1.85 0.065 0.073
F
11.4
4.8
3.9
11.9
1.9
50
11.6 0.449 0.456
5.0 0.189 0.197
4.1 0.153 0.161
12.1 0.468 0.476
2.1 0.075 0.082
1.574
K0
P0
P1
P2
R
T
0.25 0.35 0.0098 0.0137
23.7 24.3 0.933 0.956
W
* on sales type
10/12
STP12NM50N - STF12NM50N - STB12NM50N - STD12NM50N
Table 9: Revision History
Date
Revision
Description of Changes
24-May-2005
1
First Release.
11/12
STP12NM50N - STF12NM50N - STB12NM50N - STD12NM50N
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
All other names are the property of their respective owners
© 2005 STMicroelectronics - All Rights Reserved
STMicroelectronics group of companies
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12/12
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