STD7N52DK3TRL [STMICROELECTRONICS]
6.2A, 620V, 1.15ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, ROHS COMPLIANT, DPAK-3;
| 型号： | STD7N52DK3TRL |
| 厂家： | 
ST |
| 描述： | 6.2A, 620V, 1.15ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, ROHS COMPLIANT, DPAK-3 晶体 晶体管 功率场效应晶体管 开关 脉冲 |
| 文件： | 总16页 (文件大小：930K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STD7N52DK3
STF7N52DK3, STP7N52DK3
N-channel 525 V, 0.95 Ω, 6 A, DPAK, TO-220FP, TO-220
SuperFREDmesh3™ Power MOSFET
Features
RDS(on)
max.
Order codes VDSS
ID
Pw
3
1
STD7N52DK3
6 A
90 W
25 W
90 W
DPAK
STF7N52DK3 525 V < 1.15 Ω 6 A (1)
STP7N52DK3
6 A
1. Limited by package
■ 100% avalanche tested
3
3
2
■ Extremely high dv/dt capability
■ Gate charge minimized
1
2
TO-2201
TO-220FP
■ Very low intrinsic capacitance
■ Improved diode reverse recovery
characteristics
Figure 1.
Internal schematic diagram
■ Zener-protected
D(2)
Application
Switching applications
G(1)
Description
These devices are N-channel
SuperFREDmesh3™, a new Power MOSFET
technology that is obtained via improvements
applied to STMicroelectronics’ SuperMESH3™
technology. The resulting product has an
extremely low on resistance, superior dynamic
performance, high avalanche capability and a fast
body-drain recovery diode, making it especially
suitable for the most demanding applications.
S(3)
AM01476v1
Table 1.
Device summary
Order codes
Marking
Package
Packaging
STD7N52DK3
STF7N52DK3
STP7N52DK3
7N52DK3
7N52DK3
7N52DK3
DPAK
TO-220FP
TO-220
Tape and reel
Tube
Tube
October 2010
Doc ID 16387 Rev 2
1/16
www.st.com
16
Contents
STD7N52DK3, STF7N52DK3, STP7N52DK3
Contents
1
2
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3
4
5
6
Test circuits
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
2/16
Doc ID 16387 Rev 2
STD7N52DK3, STF7N52DK3, STP7N52DK3
Electrical ratings
1
Electrical ratings
Table 2.
Symbol
Absolute maximum ratings
Value
DPAK
Parameter
Unit
TO-220
TO-220FP
VDS
VGS
ID
Drain-source voltage (VGS = 0)
Gate- source voltage
525
30
V
V
Drain current (continuous) at TC = 25 °C
Drain current (continuous) at TC = 100 °C
Drain current (pulsed)
6
4
6 (1)
4 (1)
24 (1)
25
A
A
ID
(2)
IDM
24
90
A
PTOT
IAR
Total dissipation at TC = 25 °C
W
Avalanche current, repetitive or not-
repetitive (pulse width limited by Tj max)
3
A
mJ
V
Single pulse avalanche energy
EAS
100
2500
(starting Tj = 25°C, ID = IAR, VDD = 50 V)
Gate source ESD(HBM-C = 100 pF,
VESD(G-S)
R = 1.5 kΩ)
dv/dt (3) Peak diode recovery voltage slope
20
V/ns
A/µs
di/dt
Diode reverse recovery current slope
400
Insulation withstand voltage (RMS) from
all three leads to external heat sink
VISO
2500
V
(t = 1 s; TC = 25 °C)
Tstg
Tj
Storage temperature
-55 to 150
150
°C
°C
Max. operating junction temperature
1. Limited by package
2. Pulse width limited by safe operating area
3.
I
≤ 6 A, peak V < V
DS (BR)DSS.
SD
Table 3.
Symbol
Thermal data
Parameter
Value
DPAK
Unit
TO-220
1.39
TO-220FP
Rthj-case Thermal resistance junction-case max
5
°C/W
°C/W
°C/W
(1)
Rthj-pcb
Thermal resistance junction-pcb max
50
Rthj-amb Thermal resistance junction-ambient max
62.5
300
62.5
300
Maximum lead temperature for soldering
purpose
Tl
°C
1. When mounted on 1inch² FR-4 board, 2 oz Cu
Doc ID 16387 Rev 2
3/16
Electrical characteristics
STD7N52DK3, STF7N52DK3, STP7N52DK3
2
Electrical characteristics
(TC = 25 °C unless otherwise specified)
Table 4.
Symbol
On /off states
Parameter
Test conditions
ID = 1 mA, VGS = 0
DS = Max rating
Min.
Typ.
Max. Unit
Drain-source
breakdown voltage
V(BR)DSS
525
V
Zero gate voltage
V
1
µA
µA
IDSS
drain current (VGS = 0) VDS = Max rating, TC=125 °C
50
Gate-body leakage
IGSS
VGS
=
20 V
10
µA
V
current (VDS = 0)
VGS(th)
RDS(on)
Gate threshold voltage VDS = VGS, ID = 50 µA
Static drain-source on
3
3.75
0.95
4.5
VGS = 10 V, ID = 3 A
1.15
Ω
resistance
Table 5.
Symbol
Dynamic
Parameter
Test conditions
Min.
Typ.
Max. Unit
Input capacitance
Output capacitance
Ciss
Coss
Crss
870
70
pF
V
V
DS = 50 V, f = 1 MHz,
GS = 0
-
-
-
pF
pF
Reverse transfer
capacitance
13
Equivalent
capacitance time
related
(1)
Co(tr)
-
53
pF
VDS = 0 to 525 V, VGS = 0
f = 1 MHz open drain
Equivalent
capacitance energy
related
(2)
Co(er)
-
-
74
-
-
pF
Intrinsic gate
resistance
RG
3.5
Ω
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD = 420 V, ID = 6 A,
VGS = 10 V
33
5
nC
nC
nC
-
-
(see Figure 20)
19
1.
2.
C
time related is defined as a constant equivalent capacitance giving the same charging time as C
oss eq. oss
when V increases from 0 to 80% V
DS
DSS
C
C
energy related is defined as a constant equivalent capacitance giving the same stored energy as
oss eq.
oss
when V increases from 0 to 80% V
DSS
DS
4/16
Doc ID 16387 Rev 2
STD7N52DK3, STF7N52DK3, STP7N52DK3
Electrical characteristics
Min. Typ. Max Unit
Table 6.
Symbol
Switching times
Parameter
Test conditions
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
12
12
37
19
ns
ns
ns
ns
VDD = 260 V, ID = 3 A,
RG = 4.7 Ω, VGS = 10 V
-
-
Turn-off-delay time
Fall time
(see Figure 19)
Table 7.
Symbol
Source drain diode
Parameter
Test conditions
Min. Typ. Max. Unit
ISD
Source-drain current
6
A
A
-
-
(1)
ISDM
Source-drain current (pulsed)
24
(2)
VSD
Forward on voltage
ISD = 6 A, VGS = 0
1.5
V
trr
Reverse recovery time
Reverse recovery charge
Reverse recovery current
110
440
8
ns
nC
A
I
SD = 6 A, di/dt = 100 A/µs
Qrr
-
-
V
DD = 60 V (see Figure 24)
IRRM
trr
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 6 A, di/dt = 100 A/µs
DD = 60 V, Tj = 150 °C
(see Figure 24)
140
680
10
ns
nC
A
Qrr
V
IRRM
1. Pulse width limited by safe operating area
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
Table 8.
Symbol
Gate-source Zener diode
Parameter
Test conditions
Min. Typ. Max. Unit
30
Gate-source breakdown
voltage
BVGSO
Igs= 1 mA (open drain)
-
V
The built-in back-to-back Zener diodes have specifically been designed to enhance not only
the device’s ESD capability, but also to make them safely absorb possible voltage transients
that may occasionally be applied from gate to source. In this respect the Zener voltage is
appropriate to achieve an efficient and cost-effective intervention to protect the device’s
integrity. These integrated Zener diodes thus avoid the usage of external components.
Doc ID 16387 Rev 2
5/16
Electrical characteristics
STD7N52DK3, STF7N52DK3, STP7N52DK3
2.1
Electrical characteristics (curves)
Figure 2.
Safe operating area for DPAK
Figure 3.
Thermal impedance for DPAK
Thermal impedance for TO-220FP
Thermal impedance for TO-220
AM07185v1
I
D
(A)
10µs
10
100µs
1
1ms
10ms
Tj=150°C
Tc=25°C
Single pulse
0.1
10
VDS(V)
0.1
1
100
Figure 4.
Safe operating area for TO-220FP
Figure 5.
AM07186v1
I
D
(A)
10
10µs
100µs
1
1ms
10ms
0.1
Tj=150°C
Tc=25°C
Single pulse
0.01
10
VDS(V)
0.1
1
100
Figure 6.
Safe operating area for TO-220
Figure 7.
AM07187v1
I
D
(A)
10
10µs
100µs
1ms
1
10ms
Tj=150°C
Tc=25°C
Single pulse
0.1
10
VDS(V)
0.1
1
100
6/16
Doc ID 16387 Rev 2
STD7N52DK3, STF7N52DK3, STP7N52DK3
Electrical characteristics
Figure 8.
Output characteristics
Figure 9.
Transfer characteristics
AM07188v1
AM07189v1
I
D
(A)
I
D
(A)
14
12
10
V
DS=20V
14
12
10
VGS=10V
7V
8
6
4
8
6
4
6V
2
0
2
0
5V
25
5
1
20
V
DS(V)
4
5
7
8
9
VGS(V)
0
10
15
0
2
3
6
Figure 10. Gate charge vs gate-source voltage Figure 11. Static drain-source on resistance
AM07190v1
AM07191v1
V
(V)
GS
450
400
350
300
R
DS(on) (Ω)
VGS
1.06
V
GS=10V
V
DD=420V
=6A
12
ID
VDS
1.04
1.02
1.00
0.98
0.96
0.94
0.92
10
8
250
200
6
150
100
50
4
2
0
0.90
0
0.88
5
6
0
2
3
4
1
10
30
Qg
(nC)
ID(A)
0
20
Figure 12. Capacitance variations
Figure 13. Output capacitance stored energy
AM07192v1
AM07193v1
C
(pF)
Eoss
(µJ)
4.0
3.5
3.0
1000
Ciss
2.5
2.0
1.5
1.0
100
10
1
Coss
Crss
0.5
0
0
0.1
100
200
400
500
1
10
V
DS(V)
100
300
VDS(V)
Doc ID 16387 Rev 2
7/16
Electrical characteristics
STD7N52DK3, STF7N52DK3, STP7N52DK3
Figure 14. Normalized gate threshold voltage Figure 15. Normalized on resistance vs
vs temperature temperature
AM07194v1
AM07195v1
V
GS(th)
R
DS(on)
(norm)
(norm)
1.10
1.00
0.90
2.5
2.0
1.5
1.0
0.80
0.5
0.0
0.70
-75
-75
-25
25
75
T
J(°C)
-25
25
75
TJ(°C)
125
125
Figure 16. Source-drain diode forward
characteristics
Figure 17. Normalized BVDSS vs temperature
AM07198v1
AM07196v1
V
SD
BVDSS
(V)
(norm)
1.0
TJ=-50°C
1.10
0.9
1.05
1.00
0.8
TJ=25°C
0.7
0.6
TJ=150°C
0.95
0.90
0.5
0.4
0
-75
10
20
30
40
50 ISD(A)
-25
25
75
TJ(°C)
125
Figure 18. Maximum avalanche energy vs
starting Tj
AM07197v1
E
AS
(mJ)
ID=3 A
V
DD=50 V
110
100
90
80
70
60
50
40
30
20
10
0
0
120
140 T
20
40
60
80 100
J(°C)
8/16
Doc ID 16387 Rev 2
STD7N52DK3, STF7N52DK3, STP7N52DK3
Test circuits
3
Test circuits
Figure 19. Switching times test circuit for
resistive load
Figure 20. Gate charge test circuit
VDD
12V
47kΩ
1kΩ
100nF
2200
3.3
μF
RL
μF
IG=CONST
VDD
100Ω
Vi=20V=VGMAX
D.U.T.
VG
VD
RG
VGS
2200
μF
D.U.T.
2.7kΩ
47kΩ
PW
1kΩ
PW
AM01468v1
AM01469v1
Figure 21. Test circuit for inductive load
switching and diode recovery times
Figure 22. Unclamped inductive load test
circuit
L
A
A
A
B
D
FAST
DIODE
L=100μH
VD
G
2200
μF
D.U.T.
B
3.3
μF
VDD
S
3.3
μF
1000
μF
B
VDD
25
Ω
ID
D
G
RG
S
Vi
D.U.T.
Pw
AM01470v1
AM01471v1
Figure 23. Unclamped inductive waveform
Figure 24. Switching time waveform
ton
tdon
toff
tdoff
V(BR)DSS
tr
tf
VD
90%
10%
90%
IDM
10%
VDS
ID
0
0
VDD
VDD
90%
VGS
10%
AM01472v1
AM01473v1
Doc ID 16387 Rev 2
9/16
Package mechanical data
STD7N52DK3, STF7N52DK3, STP7N52DK3
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com. ECOPACK
is an ST trademark.
10/16
Doc ID 16387 Rev 2
STD7N52DK3, STF7N52DK3, STP7N52DK3
Package mechanical data
Table 9.
Dim.
TO-220FP mechanical data
mm
Min.
Typ.
Max.
A
B
4.4
2.5
4.6
2.7
D
2.5
2.75
0.7
E
0.45
0.75
1.15
1.15
4.95
2.4
F
1
F1
F2
G
1.70
1.70
5.2
G1
H
2.7
10
10.4
L2
L3
L4
L5
L6
L7
Dia
16
28.6
9.8
2.9
15.9
9
30.6
10.6
3.6
16.4
9.3
3
3.2
Figure 25. TO-220FP drawing
L7
E
A
B
D
Dia
L5
L6
F2
F1
F
G
H
G1
L4
L2
L3
7012510_Rev_K
Doc ID 16387 Rev 2
11/16
Package mechanical data
STD7N52DK3, STF7N52DK3, STP7N52DK3
TO-220 type A mechanical data
mm
Typ
Dim
Min
Max
A
b
4.40
0.61
1.14
0.48
15.25
4.60
0.88
1.70
0.70
15.75
b1
c
D
D1
E
1.27
10
10.40
2.70
5.15
1.32
6.60
2.72
14
e
2.40
4.95
1.23
6.20
2.40
13
e1
F
H1
J1
L
L1
L20
L30
∅P
Q
3.50
3.93
16.40
28.90
3.75
3.85
2.95
2.65
0015988_Rev_S
12/16
Doc ID 16387 Rev 2
STD7N52DK3, STF7N52DK3, STP7N52DK3
Package mechanical data
TO-252 (DPAK) mechanical data
mm.
typ
DIM.
min.
2.20
0.90
0.03
0.64
5.20
0.45
0.48
6.00
max.
2.40
1.10
0.23
0.90
5.40
0.60
0.60
6.20
A
A1
A2
b
b4
c
c2
D
D1
E
5.10
6.40
6.60
E1
e
4.70
2.28
e1
H
4.40
9.35
1
4.60
10.10
L
L1
L2
L4
R
2.80
0.80
0.60
0 o
1
0.20
8 o
V2
0068772_G
Doc ID 16387 Rev 2
13/16
Package mechanical data
STD7N52DK3, STF7N52DK3, STP7N52DK3
5
Package mechanical data
DPAK FOOTPRINT
All dimensions are in millimeters
TAPE AND REEL SHIPMENT
REEL MECHANICAL DATA
mm
MIN. MAX. MIN. MAX.
330 12.992
inch
DIM.
A
B
C
D
G
N
T
1.5
12.8
20.2
16.4
50
0.059
13.2 0.504 0.520
0.795
18.4 0.645 0.724
1.968
22.4
0.881
BASE QTY
BULK QTY
2500
TAPE MECHANICAL DATA
2500
mm
MIN. MAX. MIN. MAX.
6.8 0.267 0.275
10.4 10.6 0.409 0.417
12.1 0.476
inch
DIM.
A0
B0
B1
D
7
1.5
1.5
1.6 0.059 0.063
0.059
D1
E
1.65 1.85 0.065 0.073
7.4 7.6 0.291 0.299
2.55 2.75 0.100 0.108
F
K0
P0
P1
P2
R
3.9
7.9
1.9
40
4.1 0.153 0.161
8.1 0.311 0.319
2.1 0.075 0.082
1.574
W
15.7
16.3 0.618 0.641
14/16
Doc ID 16387 Rev 2
STD7N52DK3, STF7N52DK3, STP7N52DK3
Revision history
6
Revision history
Table 10. Document revision history
Date
Revision
Changes
09-Oct-2009
20-Oct-2010
1
2
First release
Document status promoted from preliminary data to datasheet
Doc ID 16387 Rev 2
15/16
STD7N52DK3, STF7N52DK3, STP7N52DK3
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16/16
Doc ID 16387 Rev 2
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STMICROELECTR
STD7NM60N
N-channel 600 V, 5 A, 0.84 ohm, DPAK, TO-220FP, TO-220, IPAK second generation MDmesh Power MOSFET
STMICROELECTR
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