STP19N20 [STMICROELECTRONICS]

15A, 200V, 0.16ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN;
STP19N20
型号: STP19N20
厂家: ST    ST
描述:

15A, 200V, 0.16ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN

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STB19N20  
STP19N20  
N-channel 200V - 0.15- 15A - TO-220 - D2PAK  
MESH OVERLAY™ Power MOSFET  
General features  
Type  
VDSS  
RDS(on)  
ID  
STB19N20  
STP19N20  
200V  
200V  
<0.16Ω  
<0.16Ω  
15A  
15A  
Extremely high dv/dt capability  
Gate charge minimized  
3
3
2
1
1
TO-220  
Very low intrinsic capacitances  
D²PAK  
Description  
This Power MOSFET is designed using the  
company’s consolidated strip layout-based MESH  
OVERLAY™ process. This technology matches  
and improves the performances compared with  
standard parts from various sources.  
Internal schematic diagram  
Applications  
Switching application  
Order codes  
Part number  
Marking  
Package  
Packaging  
STB19N20  
STP19N20  
B19N20  
P19N20  
PAK  
Tape & reel  
Tube  
TO-220  
October 2006  
Rev 1  
1/14  
www.st.com  
14  
Contents  
STB19N20 - STP19N20  
Contents  
1
2
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3  
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4  
2.1  
Electrical characteristics (curves)  
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5  
3
4
5
6
Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8  
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9  
Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12  
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13  
2/14  
Rev 1  
STB19N20 - STP19N20  
Electrical ratings  
1
Electrical ratings  
Table 1.  
Absolute maximum ratings  
Symbol  
Parameter  
Value  
Unit  
VDS  
VGS  
ID  
Drain-source voltage (VGS = 0)  
Gate-source voltage  
200  
20  
V
V
Drain current (continuous) at TC = 25°C  
Drain current (continuous) at TC=100°C  
Drain current (pulsed)  
15  
A
ID  
10  
A
(1)  
IDM  
60  
A
PTOT  
Total dissipation at TC = 25°C  
Derating factor  
90  
W
0.72  
15  
W/°C  
V/ns  
dv/dt(2)  
Peak diode recovery voltage slope  
TJ  
Operating junction temperature  
Storage temperature  
-55 to 150  
°C  
Tstg  
1. Pulse width limited by safe operating area  
2. ISD 15A, di/dt 300A/µs, VDD =80%V(BR)DSS  
Table 2.  
Thermal data  
Symbol  
Parameter  
Value  
Unit  
Rthj-case  
Rthj-a  
Tl  
Thermal resistance junction-case max  
1.38  
62.5  
300  
°C/W  
°C/W  
°C  
Thermal resistance junction-ambient max  
Maximum lead temperature for soldering purpose  
Table 3.  
Avalanche data  
Symbol  
Parameter  
Value  
Unit  
Avalanche curent, repetitive or not-repetitive  
(pulse width limited by Tj Max)  
IAR  
15  
A
Single pulse avalanche energy  
EAS  
110  
mJ  
(starting Tj=25°C, Id=Iar, Vdd=50V)  
Rev 1  
3/14  
Electrical characteristics  
STB19N20 - STP19N20  
2
Electrical characteristics  
(T  
=25°C unless otherwise specified)  
CASE  
Table 4.  
On/off states  
Parameter  
Symbol  
Test conditions  
Min.  
200  
Typ. Max. Unit  
Drain-source breakdown  
voltage  
V(BR)DSS  
ID = 1mA, VGS= 0  
V
V
DS = Max rating,  
1
µA  
µA  
Zero gate voltage drain  
current (VGS = 0)  
IDSS  
VDS = Max rating @125°C  
10  
Gate body leakage current  
(VDS = 0)  
IGSS  
VGS = 20V  
±100  
nA  
VGS(th)  
RDS(on)  
VDS= VGS, ID = 250µA  
VGS= 10V, ID= 7.5A  
Gate threshold voltage  
2
3
4
V
Static drain-source on  
resistance  
0.15  
0.16  
Table 5.  
Dynamic  
Symbol  
Parameter  
Test conditions  
Min. Typ. Max. Unit  
(1)  
VDS =8V, ID = 7.5A  
Forward transconductance  
12  
S
gfs  
Ciss  
Coss  
Crss  
Input capacitance  
800  
165  
26  
pF  
pF  
pF  
VDS =25V, f=1 MHz,  
VGS=0  
Output capacitance  
Reverse transfer  
capacitance  
Qg  
Qgs  
Qgd  
VDD=160V, ID = 15A  
VGS =10V  
Total gate charge  
Gate-source charge  
Gate-drain charge  
24  
4.4  
nC  
nC  
nC  
11.6  
(see Figure 14)  
1. Pulsed: pulse duration=300µs, duty cycle 1.5%  
4/14  
Rev 1  
STB19N20 - STP19N20  
Electrical characteristics  
Min. Typ. Max. Unit  
Table 6.  
Symbol  
Switching times  
Parameter  
Test conditions  
VDD=100 V, ID= 7.5A,  
RG=4.7, VGS=10V  
(see Figure 13)  
td(on)  
tr  
Turn-on delay time  
Rise time  
11.5  
22  
ns  
ns  
V
DD = 100 V, ID = 7.5A,  
td(off)  
tf  
Turn-off delay time  
Fall time  
19  
11  
ns  
ns  
RG = 4.7, VGS = 10V  
(see Figure 13)  
Table 7.  
Symbol  
Source drain diode  
Parameter  
Test conditions  
Min Typ. Max Unit  
ISD  
Source-drain current  
15  
60  
A
A
V
(1)  
Source-drain current (pulsed)  
Forward on voltage  
ISDM  
(2)  
ISD=15A, VGS=0  
1.6  
VSD  
trr  
ISD=15A, VDD=50V  
Reverse recovery time  
Reverse recovery charge  
Reverse recovery current  
125  
0.55  
8.8  
ns  
µC  
A
Qrr  
di/dt = 100A/µs,  
IRRM  
(see Figure 18)  
trr  
ISD=15A, VDD=50V  
Reverse recovery time  
Reverse recovery charge  
Reverse recovery current  
148  
0.73  
9.9  
ns  
µC  
A
Qrr  
di/dt = 100A/µs,  
IRRM  
Tj=150°C (see Figure 18)  
1. Pulse width limited by safe operating area  
2. Pulsed: pulse duration = 300µs, duty cycle 1.5%  
Rev 1  
5/14  
Electrical characteristics  
STB19N20 - STP19N20  
2.1  
Electrical characteristics (curves)  
Figure 1. Safe operating area  
Figure 2. Thermal impedance  
Figure 3. Output characteristics  
Figure 5. Static drain-source on resistance  
6/14  
Figure 4. Transfer characteristics  
Figure 6. Normalized BV  
vs temperature  
DSS  
Rev 1  
STB19N20 - STP19N20  
Electrical characteristics  
Figure 7. Gate charge vs gate-source voltage Figure 8. Capacitance variations  
Figure 9. Normalized gate threshold voltage Figure 10. Normalized on resistance vs  
vs temperature  
temperature  
Figure 11. Source-drain forward  
characteristics  
Figure 12. Maximum avalanche energy vs  
temperature  
Rev 1  
7/14  
Test circuit  
STB19N20 - STP19N20  
3
Test circuit  
Figure 13. Switching times test circuit for  
resistive load  
Figure 14. Gate charge test circuit  
Figure 15. Test circuit for inductive load  
switching and diode recovery times  
Figure 16. Unclamped Inductive load test  
circuit  
Figure 17. Unclamped inductive waveform  
Figure 18. Switching time waveform  
8/14  
Rev 1  
STB19N20 - STP19N20  
Package mechanical data  
4
Package mechanical data  
In order to meet environmental requirements, ST offers these devices in ECOPACK®  
packages. These packages have a Lead-free second level interconnect . The category of  
second level interconnect is marked on the package and on the inner box label, in  
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering  
conditions are also marked on the inner box label. ECOPACK is an ST trademark.  
ECOPACK specifications are available at: www.st.com  
Rev 1  
9/14  
Package mechanical data  
STB19N20 - STP19N20  
TO-220 MECHANICAL DATA  
mm.  
inch  
DIM.  
MIN.  
4.40  
0.61  
1.15  
0.49  
15.25  
10  
TYP  
MAX.  
4.60  
0.88  
1.70  
0.70  
15.75  
10.40  
2.70  
5.15  
1.32  
6.60  
2.72  
14  
MIN.  
0.173  
0.024  
0.045  
0.019  
0.60  
TYP.  
MAX.  
0.181  
0.034  
0.066  
0.027  
0.620  
0.409  
0.106  
0.202  
0.052  
0.256  
0.107  
0.551  
0.154  
A
b
b1  
c
D
E
0.393  
0.094  
0.194  
0.048  
0.244  
0.094  
0.511  
0.137  
e
2.40  
4.95  
1.23  
6.20  
2.40  
13  
e1  
F
H1  
J1  
L
L1  
L20  
L30  
øP  
Q
3.50  
3.93  
16.40  
28.90  
0.645  
1.137  
3.75  
2.65  
3.85  
2.95  
0.147  
0.104  
0.151  
0.116  
10/14  
Rev 1  
STB19N20 - STP19N20  
Package mechanical data  
D2PAK MECHANICAL DATA  
mm.  
inch  
DIM.  
MIN.  
4.4  
TYP  
MAX.  
4.6  
MIN.  
0.173  
0.098  
0.001  
0.027  
0.044  
0.017  
0.048  
0.352  
TYP.  
MAX.  
0.181  
0.106  
0.009  
0.036  
0.067  
0.023  
0.053  
0.368  
A
A1  
A2  
B
2.49  
0.03  
0.7  
2.69  
0.23  
0.93  
1.7  
B2  
C
1.14  
0.45  
1.23  
8.95  
0.6  
C2  
D
1.36  
9.35  
D1  
E
8
0.315  
0.334  
10  
10.4  
0.393  
E1  
G
8.5  
4.88  
15  
5.28  
15.85  
1.4  
0.192  
0.590  
0.050  
0.055  
0.094  
0.208  
0.625  
0.055  
0.068  
0.126  
L
L2  
L3  
M
1.27  
1.4  
1.75  
3.2  
2.4  
R
0.4  
0.015  
V2  
0º  
4º  
1
Rev 1  
11/14  
Packaging mechanical data  
STB19N20 - STP19N20  
5
Packaging mechanical data  
2
D PAK FOOTPRINT  
TAPE AND REEL SHIPMENT  
REEL MECHANICAL DATA  
mm  
MIN. MAX. MIN. MAX.  
330 12.992  
inch  
DIM.  
A
B
C
D
G
N
T
1.5  
12.8  
20.2  
24.4  
100  
0.059  
13.2 0.504 0.520  
0795  
26.4 0.960 1.039  
3.937  
30.4  
1.197  
BASE QTY  
BULK QTY  
1000  
TAPE MECHANICAL DATA  
1000  
mm  
inch  
DIM.  
MIN. MAX. MIN. MAX.  
10.5 10.7 0.413 0.421  
15.7 15.9 0.618 0.626  
A0  
B0  
D
1.5  
1.6 0.059 0.063  
D1  
E
1.59 1.61 0.062 0.063  
1.65 1.85 0.065 0.073  
F
11.4  
4.8  
3.9  
11.9  
1.9  
50  
11.6 0.449 0.456  
5.0 0.189 0.197  
4.1 0.153 0.161  
12.1 0.468 0.476  
2.1 0.075 0.082  
1.574  
K0  
P0  
P1  
P2  
R
T
0.25 0.35 0.0098 0.0137  
23.7 24.3 0.933 0.956  
W
* on sales type  
12/14  
Rev 1  
STB19N20 - STP19N20  
Revision history  
6
Revision history  
Table 8.  
Date  
06-Oct-2006  
Revision history  
Revision  
Changes  
1
First Release  
Rev 1  
13/14  
STB19N20 - STP19N20  
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14/14  
Rev 1  

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