STPS80H100TV [STMICROELECTRONICS]
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER; 高压功率肖特基整流器
| 型号： | STPS80H100TV |
| 厂家： | 
ST |
| 描述： | HIGH VOLTAGE POWER SCHOTTKY RECTIFIER |
| 文件： | 总4页 (文件大小：53K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STPS80H100TV
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
MAIN PRODUCT CHARACTERISTICS
IF(AV)
VRRM
2 x 40 A
100 V
K2
K1
A2
A1
Tj (max)
VF (max)
150 °C
0.65 V
FEATURES AND BENEFITS
NEGLIGIBLESWITCHING LOSSES
HIGHJUNCTION TEMPERATURE CAPABILITY
LOW LEAKAGECURRENT
GOODTRADE OFF BETWEEN LEAKAGECUR-
RENT AND FORWARD VOLTAGE DROP
AVALANCHERATED
LOW INDUCTANCE PACKAGE
INSULATEDPACKAGE:
Insulatedvoltage = 2500V(RMS)
Capacitance= 45 pF
ISOTOPTM
DESCRIPTION
High voltage dual Schottky barrier rectifier
designed for high frequency telecom and
computer Switched Mode Power Supplies
and other power converters.
Packaged in ISOTOP, this device is intended for
use in medium voltage operation, and particu-
larly, in high frequency circuitries where low
switching losses and low noise are required.
ABSOLUTE RATINGS
Symbol
(limiting values, per diode)
Parameter
Value
100
Unit
V
VRRM
Repetitivepeak reverse voltage
IF(RMS) RMS forward current
125
A
IF(AV)
Average forward current
Tc = 120°C
δ = 0.5
Per diode
Per device
40
80
A
IFSM
IRRM
IRSM
Tstg
Surge non repetitiveforward current tp = 10 ms sinusoidal
700
A
A
A
µ
Repetitivepeak reverse current
tp = 2 s square F = 1kHz
2
5
Non repetitive peak reverse current tp = 100 µs square
Storage temperaturerange
°
-55 to+150
150
C
Tj
Maximum operating junctiontemperature *
Critical rate of rise of reverse voltage
°C
dV/dt
10000
V/µs
dPtot
dTj
1
* :
<
thermal runawayconditionfor a diode on its own heatsink
Rth(j−a)
July 1999 - Ed: 3A
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STPS80H100TV
THERMAL RESISTANCES
Symbol
Parameter
Value
1
Unit
Rth (j-c) Junction to case
Per leg
Total
°C/W
0.55
0.1
Rth (c)
Coupling
When the diodes 1 and 2 are used simultaneously:
∆ Tj(diode 1) = P(diode1)x Rth(j-c)(Per diode) + P(diode 2) x Rth(c)
STATIC ELECTRICAL CHARACTERISTICS (per diode)
Symbol
Parameter
Tests Conditions
Min. Typ. Max.
Unit
µA
mA
V
IR *
Reverse leakage current Tj = 25°C
Tj = 125°C
VR = VRRM
20
7
25
°
VF **
Forward voltage drop
Tj = 25 C
IF = 40 A
IF = 40 A
IF = 80 A
IF = 80 A
0.78
Tj = 125°C
Tj = 25°C
0.61 0.65
0.89
°
Tj = 125 C
0.7
0.74
Pulse test : * tp = 5 ms, < 2%
δ
** tp = 380 µs, δ < 2%
To evaluate the maximum conduction losses use the following equation :
2
P = 0.56 x IF(AV) + 0.0022 x IF
(RMS)
Fig. 1: Averageforward power dissipation versus
averageforward current (per diode).
Fig. 2: Average forward current versus ambient
temperature ( =0.5, per diode).
δ
PF(av)(W)
IF(av)(A)
35
50
45
40
35
30
25
20
15
10
5
δ = 0.2
δ = 0.1
δ = 0.5
δ = 0.05
Rth(j-a)=Rth(j-c)
30
25
20
15
10
5
δ = 1
Rth(j-a)=5°C/W
T
T
tp
=tp/T
tp
=tp/T
δ
IF(av) (A)
δ
Tamb(°C)
0
0
0
25
50
75
100
125
150
0
5
10 15 20 25 30 35 40 45 50
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STPS80H100TV
Fig. 3:
Fig. 4:
Relative variation of thermal impedance
junction to case versus pulse duration(per diode).
Non repetitive surge peak forward current
versusoverloadduration(maximum values,perdiode).
IM(A)
Zth(j-c)/Rth(j-c)
500
1.0
400
300
0.8
δ = 0.5
0.6
Tc=50°C
200
0.4
δ = 0.2
T
Tc=75°C
δ = 0.1
IM
100
0.2
Tc=110°C
Single pulse
t
tp
=tp/T
δ
t(s)
tp(s)
1E-1
δ=0.5
0
0.0
1E-3
1E-3
1E-2
1E-1
1E+0
1E-2
1E+0
5E+0
Fig. 5: Reverse leakage current versus reverse
voltage applied (typicalvalues, per diode).
Fig. 6: Junction capacitance versus reverse
voltage applied (typical values, per diode).
C(nF)
IR(µA)
5.0
1E+4
Tj=125°C
F=1MHz
Tj=25°C
1E+3
1E+2
1E+1
1.0
1E+0
Tj=25°C
VR(V)
VR(V)
1E-1
0.1
0
10 20 30 40 50 60 70 80 90 100
1
2
5
10
20
50
100
Fig. 7: Forward voltage drop versus forward
current (maximum values, per diode).
IFM(A)
500
100
Tj=125°C
Tj=25°C
10
VFM(V)
1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
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STPS80H100TV
PACKAGE MECHANICAL DATA
ISOTOPTM
DIMENSIONS
Millimeters Inches
Min.
REF.
Min.
Max.
12.20
9.10
Max.
0.480
0.358
0.323
0.033
0.081
1.504
1.248
1.004
0.951
A
A1
B
11.80
8.90
0.465
0.350
0.307
0.030
0.077
1.488
1.240
0.990
0.939
7.8
8.20
C
0.75
0.85
C2
D
1.95
2.05
37.80
31.50
25.15
23.85
38.20
31.70
25.50
24.15
D1
E
E1
E2
G
24.80 typ.
0.976 typ.
14.90
12.60
3.50
15.10
12.80
4.30
0.587
0.496
0.138
0.161
0.181
0.157
0.157
1.185
0.594
0.504
0.169
0.169
0.197
0.69
G1
G2
F
4.10
4.30
F1
P
4.60
5.00
4.00
4.30
P1
S
4.00
4.40
0.173
1.193
30.10
30.30
Cooling method: C
Recommended torque value:1.3 N.m.
Maximum torque value: 1.5 N.m.
Ordering type
Marking
Package
Weight
27g
Base qty
Delivery mode
STPS80H100TV STPS80H100TV
Epoxy meets UL94,V0
ISOTOP
10
Tube
without screws
Informationfurnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of
use of such information nor forany infringementof patents or other rights of third parties which may result fromits use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written ap-
proval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
1999 STMicroelectronics - Printed in Italy - All rights reserved.
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