MA4AGBLP912 [TE]
AlGaAs Beam Lead PIN Diode; 铝镓砷梁式引线PIN二极管
| 型号： | MA4AGBLP912 |
| 厂家： | 
TE CONNECTIVITY |
| 描述： | AlGaAs Beam Lead PIN Diode |
| 文件： | 总5页 (文件大小：87K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AlGaAs Beam Lead
PIN Diode
V 1.00
Features
Outline ( Topview )
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Ultra Low Capacitance < 22 fF
Excellent RC Product < 0.10 pS
High Switching Cutoff Frequency > 110 GHz
5 Nanosecond Switching Speed
Driven by Standard +5 V TTL PIN Diode Driver
Silicon Nitride Passivation
Polyamide Scratch Protection
Description
M/A-COM's MA4AGBLP912 is an Aluminum-Gallium-Arsenide
Anode Enhanced, Beam Lead PIN Diode. AlGaAs anodes, which
utilize M/A-COM’s patent pending hetero-junction technology,
produce less diode “On” resistance than conventional GaAs
devices. These devices are fabricated on a OMCVD epitaxial wafer
using a process designed for high device uniformity and extremely
low parasitics. The diodes themselves exhibit low series resistance
( 4 W ), low capacitance ( 20 fF ), and extremely fast switching
speed, ( 5 nS ). They are fully passivated with silicon nitride and
have an additional layer of a polymer for scratch protection. The
protective coating prevents damage to the junction and the anode
air bridges during handling.
Absolute Maximum Ratings
@ +25 °C1
Parameter
Maximum Rating
-65 °C to +125 °C
-65 °C to +150 °C
+235 °C for 10 sec.
+ 23 dBm C. W.
40 mA
Operating Temperature
Storage Temperature
Applications
The ultra low capacitance of the MA4AGBLP912 device allows
use through W-band (110 GHz) applications. The low RC product
and low profile of the PIN diodes makes it ideal for use in
microwave and millimeter wave switch designs, where lower
insertion loss and higher isolation are required. The + 10 mA ( low
loss state ) and the 0v ( isolation state ) bias of the diodes allows
the use a simple + 5 V TTL gate driver. These AlGaAs diodes are
used as switching arrays on radar systems, high-speed ECM
circuits, optical switching networks, instrumentation, and other
wideband multi-throw switch assemblies.
Mounting Temperature
C.W. Incident RF Power
Forward D.C. Current
Reverse D.C. Voltage @ -10 mA
½-50 V ½
1. Exceeding any of these values may result in permanent
damage
AlGaAs Beam Lead PIN Diode
Electrical Specifications @ TA = 25 °C
MA4AGBLP912
V 1.00
Parameters and Test Conditions
Symbol and Unit
Units
Min.
Typ.
Max.
Total Capacitance at -5 V at 10 GHz1
Ct
fF
-
20
22
Forward Resistance at +20 mA at 10 GHz2
Forward Voltage at +10 mA
Rs
Vf
Ohms
Volts
-
-
4.0
4.9
1.36
1.50
Leakage Current at -40 V
Minority Carrier Lifetime
Ir
nA
nS
-
-
½-50½
½-300½
TL
5
10
NOTES:
1. Reverse Bias Capacitance is measured as a Single Series diode at -5 V in a 50 W test fixture at 10 GHz.
2. Forward Series Resistance is measured as a Single Series diode at 20 mA in a 50 W test fixture at 10 GHz.
2
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s)
or information contained herein without notice.
n North America: Tel. (800) 366-2266
n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
n Europe: Tel. +44 (1908) 574 200, Fax+44 (1908) 574 300
Visit www.macom.com for additional data sheets and product information.
AlGaAs Beam Lead PIN Diode
Assembly Considerations
MA4AGBLP912
V 1.00
General Handling
These devices have a polymer layer which provides scratch
protection for the junction area and the anode air bridge. Beam
lead devices must, however, be handled with extreme care
since the leads may easily be distorted or broken by the normal
pressures exerted when handled with tweezers. A vacuum
pencil with a #27 tip is recommended for picking and placing.
The following precautions should be observed to avoid
damaging these chips.
Cleanliness
These devices should be handled in a clean environment. Do
not attempt to clean die after installation.
These devices were designed to be inserted onto hard or soft
substrates. Recommended methods of attachment include ther-
mocompression bonding, parallel-gap welding, solder reflow,
and electrically conductive silver epoxy.
Static Sensitivity
Aluminum Gallium Arsenide PIN diodes are Class 1 ESD
sensitive and can be damaged by static electricity. Proper ESD
techniques should be used when handling these devices.
See Application Note M541, “Bonding and Handling Proce-
dures for Chip Diode Devices” for More Detailed Assembly
Instructions.
Diode Model
Rs
Ls = 0.5 nH
Ct
3
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s)
or information contained herein without notice.
n North America: Tel. (800) 366-2266
n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
n Europe: Tel. +44 (1908) 574 200, Fax+44 (1908) 574 300
Visit www.macom.com for additional data sheets and product information.
AlGaAs Beam Lead PIN Diode
Outline Dimensions — Topview and Sideview
MA4AGBLP912
V 1.00
C
B
G
A
D
E
F
mm
Dim
A
Mils
11.0 +/- 2.0
6.9 +/- 2.0
4.7 +/- 1.0
6.9 +/- 2.0
6.9 +/- 2.0
4.0+/- 2.0
24.8+/- 3.0
0.28 +/- 0.05
0.18 +/- 0.05
0.12 +/- 0.025
0.18 +/- 0.05
0.18 +/- 0.05
0.10 +/- 0.05
0.63 +/- 0.75
B
C
D
E
F
G
4
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s)
or information contained herein without notice.
n North America: Tel. (800) 366-2266
n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
n Europe: Tel. +44 (1908) 574 200, Fax+44 (1908) 574 300
Visit www.macom.com for additional data sheets and product information.
AlGaAs Beam Lead PIN Diode
Diode SPICE Values
MA4AGBLP912
V 1.00
MA4AGBPL912 SPICE Model
PinDiodeModel
Is=1.0E-14 A
Vi=0.0 V
wBv= 50 V
wPmax= 100 mW
Ffe= 1.0
= 8600 cm^2/V-sec
-
e
m
Wi= 3.0 um
Rr= 10 K Ohms
Cjmin= 0.020 pF
Tau= 10 nsec
Rs(I)= Rc + Rj(I) = 0.10 Ohm + Rj(I)
Cj0= 0.022 pF
Vj= 1.35 V
M= 0.5
Fc= 0.5
Imax= 0.04 A
Kf= 0.0
Af=1.0
5
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s)
or information contained herein without notice.
n North America: Tel. (800) 366-2266
n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
n Europe: Tel. +44 (1908) 574 200, Fax+44 (1908) 574 300
Visit www.macom.com for additional data sheets and product information.
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