MA4AGSW1A_V5 [TE]
SPST Non-Reflective AlGaAs PIN Diode Switch; SPST无反光铝镓砷PIN二极管开关
| 型号： | MA4AGSW1A_V5 |
| 厂家： | 
TE CONNECTIVITY |
| 描述： | SPST Non-Reflective AlGaAs PIN Diode Switch |
| 文件： | 总7页 (文件大小：133K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MA4AGSW1A
SPST Non-Reflective AlGaAs PIN Diode Switch
V5
FEATURES
♦ Ultra Broad Bandwidth: 50 MHz to 50 GHz
♦ Functional Bandwidth : 50 MHz to 70 GHz
♦ 0.5 dB Insertion Loss at 50GHz
♦ 46 dB Isolation at 50 GHz
♦ Low Current consumption.
• -10mA /1.35V for low loss state
•+10mA /1.35V for Isolation state
♦ Silicon Nitride Passivation
♦ Polymer Scratch protection
♦ RoHS Compliant
DESCRIPTION
Yellow areas indicate bond pads
M/A-COM’s, MA4AGSW1A is an Aluminum-Gallium-
Arsenide, single pole, single throw (SPST), absorptive
PIN diode switch. The switch features enhanced AlGaAs
anodes which are formed using M/A-COM’s patented
hetero-junction technology. AlGaAs technology produces
a switch with less loss than a device fabricated using
conventional GaAs processes. As much as a 0.3dB
reduction in insertion loss can be realized at 50GHz. This
device is fabricated on an OMCVD epitaxial wafer using
a process designed for high device uniformity and
extremely low parasitics. The PIN diodes within the chip
exhibit low series resistance, low capacitance, and fast
switching speed. They are fully passivated with silicon
nitride and have an additional polymer layer for scratch
protection. The protective coating prevents damage
during handling and assembly to the diode junction as
well as the anode air-bridges . Off chip bias circuitry will
be required.
APPLICATIONS
Absolute Maximum Ratings @ TAMB = +25°C
The output port of this device, J2, is terminated into 50Ω
during isolation mode, which allows this signal to be
absorbed rather than reflected back. This functionality
makes it ideal for instrumentation and radar applications.
An absorptive switch can be added to other AlGaAs
reflective switches to improve isolation VSWR and
increase isolation magnitude. The ultra low capacitance
of the PIN diodes makes it ideal for usage in low loss and
high isolation microwave and millimeter wave switch
designs through 70 GHz. The lower series resistance of
the AlGaAs diodes reduces the total insertion loss and
distortion of the device. AlGaAs PIN switches are used in
applications such as switching arrays for radar systems,
radiometers, and other multi-function components.
Parameter
Maximum Rating
-55°C to +125°C
-55°C to +150°C
+23dBm C.W.
25V
Operating Temperature
Storage Temperature
Incident C.W. RF Power
Breakdown Voltage
Bias Current
± 25mA
Assembly Temperature
Junction Temperature
+300°C < 10 sec
+175°C
Maximum combined operating conditions for RF Power, D.C. bias,
and temperature: +23 dBm C.W. @ 10 mA (per diode) @ +85°C.
1
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.
• North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400
• India Tel: +91.80.43537383
• China Tel: +86.21.2407.1588
Visit www.macomtech.com for additional data sheets and product information.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.
MA4AGSW1A
SPST Non-Reflective AlGaAs PIN Diode Switch
V5
Electrical Specifications @ TAMB = 25°C
(On-wafer measurements)
Parameter
Ports
Bias Conditions
Frequency Typical
Bias J1 — -1.35V/10mA
Bias B — -1.35V/0mA
Port J1 — +1.35V/10mA
Bias B — +1.35V/10mA
Port J1 — -1.35V/10mA
Bias B — -1.35V/0mA
Port J1 — -1.35V/10mA
Bias B — -1.35V/0mA
Port J1 — +1.35V/10mA
Bias B — +1.35V/10mA
±5V PIN TTL Driver
Insertion Loss
J1 - J2
50Ghz
50Ghz
50Ghz
50Ghz
50Ghz
10GHz
1.2dB
Isolation
J1 - J2
J1- J2 (Terminated by 50Ω)
J2- J1 (Terminated by 50Ω)
J2
30dB
15dB
18dB
18dB
10nS
Input return Loss
Output Return Loss
(Insertion loss))
Output Return Loss
(Isolation)
Switching Speed
(10% - 90% RF Voltage)
J1 - J2
1MHz Repetition Frequency.
Notes:
1. Typical switching speed is measured from 10% to 90% of the detected RF voltage driven by a TTL
compatible driver. Driver output parallel RC network uses a capacitor between 390 pF - 560 pF and
a resistor between 150 - 220 Ohms to achieve 10 ns rise and fall times.
2. Bias nodes, J1 and B may be connected together
2
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.
• North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400
• India Tel: +91.80.43537383 • China Tel: +86.21.2407.1588
Visit www.macomtech.com for additional data sheets and product information.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.
MA4AGSW1A
SPST Non-Reflective AlGaAs PIN Diode Switch
V5
Typical RF Performance (Probed on Wafer)
Isolation
Isol (dB)
Freq. (GHz)
Input Return Loss
Loss (dB)
Freq. (GHz)
3
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.
• North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400
• India Tel: +91.80.43537383 • China Tel: +86.21.2407.1588
Visit www.macomtech.com for additional data sheets and product information.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.
MA4AGSW1A
SPST Non-Reflective AlGaAs PIN Diode Switch
V5
Typical RF Performance (Probed on wafer)
Output Return Loss (Insertion Loss State)
Loss (dB)
Freq. (GHz)
Output Return Loss (Isolation Loss State)
Loss (dB)
Freq. (GHz)
4
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.
• North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400
• India Tel: +91.80.43537383 • China Tel: +86.21.2407.1588
Visit www.macomtech.com for additional data sheets and product information.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.
MA4AGSW1A
SPST Non-Reflective AlGaAs PIN Diode Switch
V5
Operation of the MA4AGSW1A Switch
An external bias network and D.C return is required for successful operation of the MA4AGSW1A absorptive
SPST AlGaAs PIN diode switch. The backside area of the die is the RF and D.C. ground return plane. In the
low loss state, the series diode is forward biased with negative current at D.C. Bias 1 and the match diode is
biased at 0V at D.C. Bias B. In the isolated state, the shunt diode and the match diode are both forward biased
at D.C. Bias B1 and D.C. Bias B (series diode becomes reverse biased ). This isolation state bias results in a
good 50Ω match into Port J2. Typical driver connections are shown in Table I below. The bias network design
shown in the schematic should yield > 30dB RF to DC isolation.
MA4AGSW1A Schematic with Bias Network for 10-30Ghz
B1
DC Bias
MA4AGSW1A Chip
10 pF
4.7 nH
DC and RF ground return
on backside of chip
10 pF
10 pF
Matching
diode bias
MA4AGSW1A Chip
Notes:
1. D.C. Bias 1 and D.C. Bias B nodes can be connected together.
2. Diode junction forward bias voltage, Δ Vf @ 10 mA ~ 1.35 V @ + 25° C.
TYPICAL DRIVER CONNECTIONS
J1-J2 Low Loss : Good VSWR at J1 & J2 J1-J2 Isolation : Good VSWR at J2
D.C. Bias 1 = -10mA
D.C. Bias B = 0V
D.C. Bias 1 = +10mA
D.C. Bias B = +10mA
5
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.
• North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400
• India Tel: +91.80.43537383
• China Tel: +86.21.2407.1588
Visit www.macomtech.com for additional data sheets and product information.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.
MA4AGSW1A
SPST Non-Reflective AlGaAs PIN Diode Switch
V5
Chip Dimensions and Bonding Pad Locations (In Yellow)
mils
mm
Dimension
Min
44.9
Max
46.9
Min
1.14
0.94
0.26
0.58
0.44
0.52
0.96
0.09
0.09
Max
1.19
A
B
36.9
38.9
0.99
C
10.4
11.4
0.29
D
22.8
23.4
0.59
E
17.3
17.9
0.45
F
20.3
20.9
0.53
G
H
37.9
38.5
0.98
3.4
4.4
0.11
Thickness
Bond Pads J1 & J2
Bond Pad B
3.5
4.5
0.11
3.9 X 3.9
3.9 X 4.2
4.1 X 4.1
4.1 X 4.4
.099 X .099
.099 X .107
.104 X .104
.104 X .112
6
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.
• North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400
• India Tel: +91.80.43537383 • China Tel: +86.21.2407.1588
Visit www.macomtech.com for additional data sheets and product information.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.
MA4AGSW1A
SPST Non-Reflective AlGaAs PIN Diode Switch
V5
ASSEMBLY INSTRUCTIONS
CLEANLINESS
These chips should be handled in a clean environment.
STATIC SENSITIVITY
These Devices are considered ESD Class 1A, HBM. Proper ESD techniques should be used when handling
these devices.
GENERAL HANDLING
The protective polymer coating on the active areas of the die provides scratch and impact protection,
particularly for the metal air bridge, which contacts the diode’s anode. Die should primarily be handled with
vacuum pickup tools, or alternatively with plastic tweezers.
ASSEMBLY TECHNIQUES
The MA4AGSW1A, AlGaAs device is designed to be mounted with electrically conductive silver epoxy or with
a low temperature solder perform, which does not have a rich tin content.
SOLDER DIE ATTACH
Only solders which do not scavenge gold, such as 80Au/Sn20, or Indalloy #2 is recommended. Do not expose
die to temperatures greater than 300°C for more than 10 seconds.
ELECTRICAL CONDUCTIVE EPOXY DIE ATTACH
Use a controlled thickness of approximately 2 mils for best electrical conductivity and lowest thermal
resistance. Cure epoxy per manufacturer’s schedule. Typically 150°C for 1 hour.
RIBBON/WIRE BONDING
Thermo-compression wedge or ball bonding may be used to attach ribbons or wire to the gold bonding
pads. A 1/4 x 3 mil gold ribbon is recommended on all RF ports and should be kept as short as possible
for the lowest inductance and best microwave performance. For more detailed handling and assembly
instructions, see Application Note M541, “Bonding and Handling Procedures for Chip Diode
Devices” at www.macomtech.com.
Ordering Information
Part Number
MA4AGSW1A
Package
Waffle Pack
7
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.
• North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400
• India Tel: +91.80.43537383
• China Tel: +86.21.2407.1588
Visit www.macomtech.com for additional data sheets and product information.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.
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