MA4AGSW1_V5 [TE]
SPST Reflective AlGaAs PIN Diode Switch; SPST反光铝镓砷PIN二极管开关
| 型号： | MA4AGSW1_V5 |
| 厂家： | 
TE CONNECTIVITY |
| 描述： | SPST Reflective AlGaAs PIN Diode Switch |
| 文件： | 总7页 (文件大小：111K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MA4AGSW1
SPST Reflective AlGaAs PIN Diode Switch
Rev. V5
FEATURES
Ultra Broad Bandwidth : 50 MHz to 50 GHz
Functional Bandwidth : 50 MHz to 70 GHz
0.3 dB Insertion Loss
46 dB Isolation at 50 GHz
Low Current consumption
-5V for low loss state
+10mA for Isolation state
M/A-COM Tech’s unique AlGaAs
hetero-junction anode technology
Silicon Nitride Passivation
Polymer Scratch protection
RoHS Compliant* and 260°C Reflow Compatible
Yellow areas indicate bond pads
J2
J1
DESCRIPTION
The MA4AGSW1 is an Aluminum-Gallium-Arsenide,
single pole, single throw (SPST), PIN diode switch.
The switch features enhanced AlGaAs anodes which
are formed using M/A-COM Tech’s patented hetero-
junction technology. This technology produces a
switch with less loss than conventional GaAs proc-
esses. As much as a 0.3 dB reduction in insertion
loss can be realized at 50GHz. These devices are
fabricated on an OMCVD epitaxial wafer using a
process designed for high device uniformity and
extremely low parasitics. The diodes themselves
exhibit low series resistance, low capacitance, and
fast switching speed. They are fully passivated with
silicon nitride and have an additional polymer layer
for scratch protection. The protective coating
prevents damage to the diode junction and anode
air-bridges during handling and assembly. Off chip
bias circuitry is required.
Absolute Maximum Ratings @ TAMB = +25°C
Parameter
Maximum Rating
-55°C to +125°C
-55°C to +150°C
Operating Temperature
Storage Temperature
Incident C.W. RF Power
Breakdown Voltage
Bias Current
+23dBm C.W.
25V
APPLICATIONS
± 25mA
+150°C
The high electron mobility of AlGaAs and the low
capacitance of the PIN diodes makes this switch
ideal for fast switching, high frequency, multi-throw
switch designs. These AlGaAs PIN switches are use
in switching arrays for radar systems, radiometers,
test equipment and other multi-assembly compo-
nents.
Junction Temperature
Maximum combined operating conditions for RF Power, D.C.
bias, and temperature: +23 dBm C.W. @ 10 mA (per diode) @
+85°C.
* Restrictions on Hazardous Substances, European Union Directive 2002/95/EC.
1
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.
• North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400
• India Tel: +91.80.43537383 • China Tel: +86.21.2407.1588
Visit www.macomtech.com for additional data sheets and product information.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.
MA4AGSW1
SPST Reflective AlGaAs PIN Diode Switch
Rev. V5
Electrical Specifications @ TAMB = 25°C
(On-wafer measurements)
PARAMETER
FREQUENCY BAND
MIN
TYP
MAX
UNITS
0.05 - 18GHz
18 - 50GHz
---
---
0.2
0.3
0.3
0.6
dB
dB
INSERTION LOSS @ -5V
0.05 - 18GHz
18 - 50GHz
20
40
22
46
---
---
dB
dB
ISOLATION @ +10mA
INPUT RETURN LOSS @ -5V
OUTPUT RETURN LOSS @ -5V
0.05 - 18GHz
18 - 50GHz
---
---
30
16
---
---
dB
dB
0.05 - 18GHz
18 - 50GHz
---
---
30
16
---
---
dB
dB
SWITCHING SPEED*
( 10 % - 90 % RF VOLTAGE )
10GHZ
---
10
---
nS
*Note:
Typical switching speed is measured from 10% to 90% of the detected RF voltage driven by a TTL
compatible driver. Driver output parallel RC network uses a capacitor between 390 pF - 560 pF and
a resistor between 150 - 220 Ohms to achieve 10 ns rise and fall times.
2
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.
• North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400
• India Tel: +91.80.43537383 • China Tel: +86.21.2407.1588
Visit www.macomtech.com for additional data sheets and product information.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.
MA4AGSW1
SPST Reflective AlGaAs PIN Diode Switch
Rev. V5
Typical RF Performance (Probed on Wafer)
INSERTION LOSS @ -5 V
0
-0.1
-0.2
-0.3
-0.4
-0.5
0.00
10.00
20.00
30.00
40.00
50.00
FREQUENCY ( GHz )
ISOLATION @ +10 mA
0
-10
-20
-30
-40
-50
-60
0.00
10.00
20.00
30.00
40.00
50.00
FREQUENCY ( GHz )
J2
3
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.
• North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400
• India Tel: +91.80.43537383 • China Tel: +86.21.2407.1588
Visit www.macomtech.com for additional data sheets and product information.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.
MA4AGSW1
SPST Reflective AlGaAs PIN Diode Switch
Rev. V5
Typical RF Performance (Probed on wafer)
INPUT RETURN LOSS @ -5 V
0
-10
-20
-30
-40
-50
0.00
10.00
20.00
30.00
40.00
50.00
FREQUENCY ( GHz )
OUTPUT RETURN LOSS @ -5 V
0
-10
-20
-30
-40
-50
0.00
10.00
20.00
30.00
40.00
50.00
FREQUENCY ( GHz )
4
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.
• North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400
• India Tel: +91.80.43537383 • China Tel: +86.21.2407.1588
Visit www.macomtech.com for additional data sheets and product information.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.
MA4AGSW1
SPST Reflective AlGaAs PIN Diode Switch
Rev. V5
Operation of the MA4AGSW1 Switch
The application of 0V or a negative DC voltage to either J1 or J2 provides insertion loss for the MA4AGSW1
SPST reflective switch. Isolation is achieved with +10 mA total D.C. current. The forward bias voltage at the diode
bias node is typically 1.4 volts for supply currents up to +30 mA and will not exceed 1.6 volts. The backside area
of the die is the RF and DC return ground plane. The bias network design should yield >30 dB RF to DC isolation.
Available for use in conjunction with M/A-COM Tech’s line of AlGaAs switches are two, fully integrated, broad-
band, monolithic, bias networks which may be used as an alternative to the suggested individual component bias
network shown below. Refer to datasheets for the MA4BN1840-1 and MA4BN1840-2 for additional information.
The lowest insertion loss, P1dB, IP3, and switching speed is achieved by applying a minimum value of | -2V | at
D.C. Bias node, which is achievable with a standard, ± 5V TTL Controlled PIN Diode Driver.
MA4AGSW1 Schematic with 2-18 GHz Bias Network
Note: The bias network can be connected to either J1 or J2
TYPICAL DRIVER CONNECTIONS
CONTROL LEVEL (DC CURRENT)
RF OUTPUT STATE
J1-J2
J1 or J2
-5V
Low Loss
+10mA
Isolation
5
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.
• North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400
• India Tel: +91.80.43537383
• China Tel: +86.21.2407.1588
Visit www.macomtech.com for additional data sheets and product information.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.
MA4AGSW1
SPST Reflective AlGaAs PIN Diode Switch
Rev. V5
Chip Dimensions and Bonding Pad Locations (In Yellow)
Mils
Millimeters
Min.
DIM
Min.
23.5
14.25
28.50
20.50
3.50
Max.
25.5
15.25
30.50
21.00
4.50
Max.
.648
.387
.775
.533
.114
.114
A
B
C
D
E
.597
.362
.724
.521
.089
.089
Pads X-Y
3.50
4.50
6
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.
• North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400
• India Tel: +91.80.43537383 • China Tel: +86.21.2407.1588
Visit www.macomtech.com for additional data sheets and product information.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.
MA4AGSW1
SPST Reflective AlGaAs PIN Diode Switch
Rev. V5
ASSEMBLY INSTRUCTIONS
CLEANLINESS
These chips should be handled in a clean environment.
STATIC SENSITIVITY
These Devices are considered ESD Class 0 HBM. Proper ESD techniques should be used when handling
these devices.
GENERAL HANDLING
The protective polymer coating on the active areas of the die provides scratch and impact protection,
particularly for the metal air bridge, which contacts the diode’s anode. Die should primarily be handled with
vacuum pickups, or alternatively with plastic tweezers.
ASSEMBLY TECHNIQUES
The MA4AGSW1, AlGaAs switch is designed to be mounted with electrically conductive silver epoxy or with a
lower temperature solder perform, which does not have a rich tin content.
SOLDER DIE ATTACH
All die attach and bonding methods should be compatible with gold metal. Solder which does not scavenge
gold, such as 80/20, Au/Sn or Indalloy #2 is recommended. Do not expose die to temperatures greater than
300°C for more than 10 seconds.
ELECTRICAL CONDUCTIVE EPOXY DIE ATTACH
Use a controlled thickness of approximately 2 mils for best electrical conductivity and lowest thermal
resistance. Cure epoxy per manufacturer’s schedule. Typically 150°C for 1 hour.
RIBBON/WIRE BONDING
Thermo-compression wedge or ball bonding may be used to attach ribbons or wire to the gold bonding pads.
A 1/4 x 3 mil gold ribbon is recommended on all RF ports and should be kept as short as possible for the
lowest inductance and best microwave performance. For more detailed handling and assembly instructions,
see Application Note M541, “Bonding and Handling Procedures for Chip Diode Devices” at
www.macomtech.com.
Ordering Information
Part Number
MA4AGSW1
Package
Waffle Pack
7
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.
• North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400
• India Tel: +91.80.43537383
• China Tel: +86.21.2407.1588
Visit www.macomtech.com for additional data sheets and product information.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.
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