MA4AGSW5 [TE]
AlGaAs SP5T Reflective PIN Diode Switch; 铝镓砷SP5T反光PIN二极管开关
| 型号： | MA4AGSW5 |
| 厂家： | 
TE CONNECTIVITY |
| 描述： | AlGaAs SP5T Reflective PIN Diode Switch |
| 文件： | 总7页 (文件大小：166K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AlGaAs SP5T Reflective
PIN Diode Switch
V 1.00
Features
MA4AGSW5 Layout
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Ultra Broad Bandwidth: 50 MHz to 50 GHz
1.7 dB Insertion Loss, 30 dB Isolation at 50 GHz
Low Current comsumption.
-10 mA for low loss state
+10 mA for Isolation state
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M/A-COM’s unique patent pending AlGaAs
hetero-junction anode technology.
Silicon Nitride Passivation
Polyamide Scratch protection
Description
M/A-COM’s MA4AGSW5 is an Aluminum-Gallium- Arsenide
anode enhanced, SP5T PIN diode switch. AlGaAs anodes, which
utilize M/A-COM’s patent pending hetero-junction technology,
produce less loss than conventional GaAs processes, by as much as
0.3 dB reduction in insertion loss at 50 GHz. These devices are
fabricated on a OMCVD epitaxial wafer using a process designed
for high device uniformity and extremely low parasitics. The
diodes themselves exhibit low series resistance, low capacitance,
and fast switching speed. They are fully passivated with silicon
nitride and have an additional layer of a polymer for scratch
protection. The protective coating prevents damage to the junction
and the anode air bridges during handling. Off-chip bias circuitry
is required and allows maximum design flexibility.
Absolute Maximum Ratings1
@ T= Room Temp.
(Unless otherwise specified)
Applications
The low capacitance of the PIN diodes makes this device ideal for
use in microwave multi-throw switch designs. The low series
resistance of the diodes reduces the insertion loss of the devices at
microwave/millimeter-wave frequencies. These AlGaAs PIN
switches are used as switching arrays on radar systems, optical
switching networks, instrumentation, and other wideband
multi-throw switch assemblies.
Parameter
Operating Temperature
Storage Temperature
RF C.W. Incident Power
Breakdown Voltage
Bias Current
Maximum Rating
-55 °C to +125 °C
-65 °C to +150 °C
+ 23 dBm C. W.
25 V
+/- 30 mA per Diode
1. Exceeding any of these values may result in permanent
damage
AlGaAs SP5T Reflective PIN Diode Switch
MA4AGSW5
V 1.00
Electrical Specifications @ 25 °C (On-Wafer Measurements)
RF Parameter
Frequency
Band
Port
Bias
Min
Max
Units
Insertion Loss
0.05 - 18 GHz
18 - 50 GHz
0.05 - 18 GHz
18 - 50 GHz
0.05 - 18 GHz
18 - 50 GHz
0.05 - 18 GHz
18 - 50 GHz
0.05 - 18 GHz
18 - 50 GHz
0.05 - 18 GHz
18 - 50 GHz
0.05 - 18 GHz
18 - 50 GHz
0.05 - 18 GHz
18 - 50 GHz
0.05 - 18 GHz
18 - 50 GHz
0.05 - 18 GHz
18 - 50 GHz
0.05 - 18 GHz
18 - 50 GHz
J2 to J1 -10 mA @ J2, +10 mA @ J3, J4, J5, J6
J2 to J1
-
-
1.4
1.9
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
J3 to J1 -10 mA @ J3, +10 mA @ J2, J4, J5, J6
J3 to J1
-
-
1.4
1.9
J4 to J1 -10 mA @ J4, +10 mA @ J2, J3, J5, J6
J4 to J1
-
-
1.4
1.9
J5 to J1 -10 mA @ J5, +10 mA @ J2, J3, J4, J6
J5 to J1
-
-
1.4
1.9
J6 to J1 -10 mA @ J6, +10 mA @ J2, J3, J4, J5
J6 to J1
-
-
1.4
1.9
Isolation
J2 to J1 -10 mA @ J6, +10 mA @ J3, J4, J5, J2
J2 to J1
35.0
30.0
35.0
30.0
35.0
30.0
35.0
30.0
35.0
30.0
12.0
12.0
-
-
-
-
-
-
-
-
-
-
-
-
J3 to J1 -10 mA @ J6, +10 mA @ J2, J4, J5, J2
J3 to J1
J4 to J1 -10 mA @ J6, +10 mA @ J2, J3, J5, J2
J4 to J1
J5 to J1 -10 mA @ J6, +10 mA @ J2, J3, J4, J2
J5 to J1
J6 to J1 -10 mA @ J2, +10 mA @ J2, J3, J4, J6
J6 to J1
In/Out Return
Loss
J2 to J1 -10 mA @ J2, +10 mA @ J3, J4, J5, J6
J2 to J1
0.05 - 18 GHz
18 - 50 GHz
J3 to J1 -10 mA @ J3, +10 mA @ J2, J4, J5, J6
J3 to J1
12.0
12.0
-
-
dB
dB
0.05 - 18 GHz
18 - 50 GHz
J4 to J1 -10 mA @ J4, +10 mA @ J2, J3, J5, J6
J4 to J1
12.0
12.0
-
-
dB
dB
0.05 - 18 GHz
18 - 50 GHz
J5 to J1 -10 mA @ J5, +10 mA @ J2, J3, J4, J6
J5 to J1
12.0
12.0
-
-
dB
dB
0.05 - 18 GHz
18 - 50 GHz
J6 to J1 -10 mA @ J6, +10 mA @ J2, J3, J4, J5
J6 to J1
12.0
12.0
-
-
dB
dB
Parameter
Switching Speed
F (GHz)
RF Ports
Test Conditions
Typ Value
Units
10.0
J1 to
J2, J3, J4, J5, J6
+/-5 V TTL Compatible PIN
Diode Driver
15
nS
(10-90%) RF Voltage)
NOTES:
1. Isolation is measured through (3) Diodes from Common Port ( Input ) to Selected Output Port with (1) Opposite Series
Junction Diode in Low Loss. Isolation for (2) Diodes from Common Port ( Input ) to Selected Output with the Same Series
Junction Diode Port in Low Loss = 22 dB Typical.
2. Typical switching speed is measured from 10% to 90% of the detected RF voltage driven by a +/- 5V TTL compatible driver.
Driver output parallel RC network uses a capacitor between 390 pF - 560 pF and a resistor between 150 - 220 Ohms to
achieve 15 ns rise and fall times.
2
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s)
or information contained herein without notice.
n North America: Tel. (800) 366-2266
n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
n Europe: Tel. +44 (1908) 574 200, Fax+44 (1908) 574 300
Visit www.macom.com for additional data sheets and product information.
AlGaAs SP5T Reflective PIN Diode Switch
Microwave Performance
MA4AGSW5
V 1.00
Typical Insertion Loss @ 25 °C (On Wafer Measurements)
0.0
-0.5
-1.0
-1.5
-2.0
Loss
( dB )
-2.5
-3.0
-3.5
-4.0
-4.5
-5.0
0
5
10
15
20
25
30
35
40
45
50
Freq ( GHz )
Typical Input Return Loss @ 25 °C (On Wafer Measurements)
0
-5
-10
R.L.
-15
( dB )
-20
-25
-30
0
5
10
15
20
25
30
35
40
45
50
Freq ( GHz )
3
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s)
or information contained herein without notice.
n North America: Tel. (800) 366-2266
n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
n Europe: Tel. +44 (1908) 574 200, Fax+44 (1908) 574 300
Visit www.macom.com for additional data sheets and product information.
AlGaAs SP5T Reflective PIN Diode Switch
Microwave Performance
MA4AGSW5
V 1.00
Typical Output Return Loss @ 25 °C (On Wafer Measurements)
0
-5
-1 0
R.L.
-1 5
( dB )
-2 0
-2 5
-3 0
0
5
10 15 20 25 3 0 3 5 4 0 45 50
F ( GHz )
Typical Isolation @ 25 °C (On Wafer Measurements)
0
-10
-20
-30
Isolation ( dB )
-40
-50
-60
-70
0
5
10 15 20 25 30 35 40 45 50
F ( GHz )
4
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s)
or information contained herein without notice.
n North America: Tel. (800) 366-2266
n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
n Europe: Tel. +44 (1908) 574 200, Fax+44 (1908) 574 300
Visit www.macom.com for additional data sheets and product information.
AlGaAs SP5T Reflective PIN Diode Switch
Chip Dimensions (mm and mils)
MA4AGSW5
V 1.00
mils
mm
Dim
Min.
Max.
1.56
Min.
60.0
Max.
61.2
A
1.53
1.61
0.76
0.39
0.82
0.16
B
1.64
0.79
0.41
0.84
0.18
63.2
29.7
15.2
32.2
6.5
64.4
30.9
16.0
33.0
7.2
C
D
E
F
G
0.65
0.09
0.67
0.11
25.7
3.7
26.5
4.3
Thickness
5
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s)
or information contained herein without notice.
n North America: Tel. (800) 366-2266
n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
n Europe: Tel. +44 (1908) 574 200, Fax+44 (1908) 574 300
Visit www.macom.com for additional data sheets and product information.
AlGaAs SP5T Reflective PIN Diode Switch
Handling Procedures
MA4AGSW5
V 1.00
Solder Die Attachment
The following precautions should be observed to avoid
damaging these chips.
All die attach and bonding methods should be compatible with
gold metal. Solder which does not scavange gold, such as
80Au/20Sn or Indalloy #2 is recommended. Do not
expose die to a temperature greater than 300 °C for more than
10 seconds.
Cleanliness
These chips should be handled in a clean environment. Do not
attempt to clean die after installation.
Electrical Conductive Epoxy
Die Attachment
Assembly can be preheated to approximately 125 °C. Use a
controlled thickness of approximately 2 mils for best electrical
and thermal conductivity. Cure epoxy as per manufacturer’s
schedule. For extended cure times, temperatures should be
kept below 150 °C.
Static Sensitivity
Proper ESD techniques should be used when handling these
devices.
General Handling
The protective polymer coating on the active areas of these die
provides scratch and impact protection, particularly for the
metal air bridge which contacts the diode’s anode. Die should
primarily be handled with vacuum pickups, or alternatively
with plastic tweezers.
Ribbon/Wire Bonding
Wedge thermo compression bonding or ball bonding may be
used to attach ribbons to the bonding pads. Gold ribbons
should be 1/4 x 3 mil sq. for all RF ports (J1-J6) for lowest
inductance and best microwave performance.
Mounting Techniques
These AlGaAs devices are designed to be mounted with
electrically conductive silver epoxy or with
temperature solder perform.
a lower
Operation of the MA4AGSW5 Switch
The Simultaneous Application of Negative D.C. Current to the Low Loss Port and Positive DC current to the Remaining Isolated
Switching Ports provides operation of the MA4AGSW Series of AlGaAs PIN Switches. The Backside Area of the Die is the RF and
DC Return Ground Plane. The DC Return is achieved on Common Port J1. Constant Current Sources should supply the DC Control
Currents. The individual Diode Voltages in the circuit are typically < | 1.5 V | up to + 30 mA . In the Low Loss State, the Series
Diodes must be Forward Biased and the Shunt Diode Reverse Biased. For All the Isolated Ports, the Shunt Diode is Forward Biased
and the Series Diode is Reverse Biased. RF to D.C. bias networks are required, such as the MA4BN1840-1. The Bias Network
Design should yield > 30 dB RF to DC Isolation in the operating frequency band.
Best Insertion Loss, P1dB, IP3, and Switching Speed is Achieved by using a Voltage Pull-up Resistor in the DC Return Path, ( J1 ).
A Minimum Value of | -3.5V | is recommended at this Return Node, which is achievable with a Standard , +/-5 V TTL Controlled
PIN Diode Driver.
6
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s)
or information contained herein without notice.
n North America: Tel. (800) 366-2266
n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
n Europe: Tel. +44 (1908) 574 200, Fax+44 (1908) 574 300
Visit www.macom.com for additional data sheets and product information.
AlGaAs SP5T Reflective PIN Diode Switch
MA4AGSW5 Schematic
MA4AGSW5
V 1.00
J3
J4
J5
J1
J2
J6
( Common )
7
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s)
or information contained herein without notice.
n North America: Tel. (800) 366-2266
n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
n Europe: Tel. +44 (1908) 574 200, Fax+44 (1908) 574 300
Visit www.macom.com for additional data sheets and product information.
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