MAAPGM0021 [TE]
5.0-8.5GHz 2W Power Amplifier; 5.0-8.5GHz 2W功率放大器
| 型号： | MAAPGM0021 |
| 厂家： | 
TE CONNECTIVITY |
| 描述： | 5.0-8.5GHz 2W Power Amplifier |
| 文件： | 总5页 (文件大小：234K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
5.0-8 .5 G H z 2 W Po w e r A m p lifie r
M A A PG M 002 1
R O -P-D S -3 06 7 D
Features
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á
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2 Watt Saturated Output Power Level
Variable Drain Voltage (4-10V) Operation
MSAG™ Process
High Performance Ceramic Bolt Down Package
APGM0021
YW W XXX
Primary Applications
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Multiple Band Point-to-Point Radio
SatCom
ISM Band
Description
Pin Number
RF Designator
No Connection
The MAAPGM0021 is a 2-stage 2 W power amplifier with on-chip
bias networks in a bolt down ceramic package, allowing easy as-
sembly. This product is fully matched to 50 ohms on both the in-
put and output. It can be used as a power amplifier stage or as a
driver stage in high power applications.
1
2
VGG
RF IN
3
4
VGG
5
No Connection
No Connection
VDD
Each device is 100% RF tested to ensure performance
compliance. The part is fabricated using M/A-COM‘s GaAs
Multifunction Self-Aligned Gate MESFET Process.
M/A-COM‘s MSAG™ process features robust silicon-like manu-
facturing processes, planar processing of ion implanted transis-
tors and multiple implant capability enabling power, low-noise,
switch and digital FETs on a single chip. The use of refractory
metals and the absence of platinum in the gate metal formulation
prevents hydrogen poisoning when employed in hermetic packag-
ing.
6
7
8
RF OUT
VDD
9
10
No Connection
Maximum Operating Conditions 1
Parameter
Absolute Maximum
Units
Symbol
Input Power
23.0
+12.0
-3.0
dBm
V
PIN
VDD
VGG
Drain Supply Voltage
Gate Supply Voltage
V
Quiescent Drain Current (No RF)
790
mA
IDQ
PDISS
TJ
Quiescent DC Power Dissipated (No RF)
Junction Temperature
6.3
180
W
°C
°C
Storage Temperature
TSTG
-55 to +150
1. Operation outside of these ranges may reduce product reliability.
1
M/A-COM Inc. and its affiliates reserve the right to make changes to the
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
Visit www.macom.com for additional data sheets and product information.
5.0-8 .5 G H z 2 W Po w e r A m p lifie r
M A A PG M 002 1
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Recommended Operating Conditions
Characteristic
Symbol
Min
4.0
Typ
Max
Unit
Drain Supply Voltage
VDD
8.0
10.0
V
Gate Supply Voltage
Input Power
VGG
PIN
-2.4
-1.7
18
-1.3
V
21.0
dBm
Junction Temperature
Thermal Resistance
TJ
KJC
TB
150
°C
°C/W
°C
14.9
MMIC Base Temperature
Note 2
2. Maximum MMIC Base Temperature = 150°C – ꢀJC* VDD * IDQ
Electrical Characteristics: TB = 40°C2, Z0 = 50 W, VDD = 8V, IDQ = 600 mA, Pin = 18 dBm, RG = 121ꢀ
Parameter
Symbol
Minimum
Typical*
5.0-8.5
33
Maximum
Units
Bandwidth
f
–
–
–
GHz
Output Power
POUT
31.5
dBm
Output Power @ 7 GHz
Power Added Efficiency
1-dB Compression Point
Small Signal Gain
POUT
PAE
32
–
33
30
34*
–
dBm
%
P1dB
G
–
32
–
dBm
dB
dB
–
14
17
–
Small Signal Gain @ 7 GHz
Input VSWR
G
17.5
–
20
22*
2.6
1.8
–
VSWR
VSWR
VSWR
1.6
1.4
2:1
Input VSWR @ 7 GHz
Output VSWR
1.2*
–
–
–
Gate Supply Current
IGG
IGG
IDD
IDD
-10
-10
0
0
10
10
mA
mA
Gate Supply Current @ 7 GHz
Drain Supply Current
Drain Supply Current @ 7 GHz
Noise Figure
–
0.6*
–
0.9
0.8
9.5
-20
-45
40
1.2
1.0
–
A
A
NF
2f
dB
2nd Harmonic
3rd Harmonic
–
–
dBc
dBc
dBm
3f
–
–
Output Third Order Intercept
OTOI
–
–
3rd Order Intermodulation Distortion,
Single Carrier Level = 23 dBm
IM3
IM5
–
–
-10
-25
–
–
dBm
dBm
5th Order Intermodulation Distortion,
Single Carrier Level = 23 dBm
3. Adjust VGG between œ2.4 to-1.3 to achieve indicated IDQ
.
4. *Not screened–shown to indicate range of expected values.
Operating Instructions
This device is static sensitive. Please handle with care. To operate the device,
follow these steps.
1. Apply VGG = -1.7 V, VDD= 0 V.
2. Ramp VDD to desired voltage, typically 8 V.
3. Adjust VGG to set IDQ, (approxmately @ œ1.7V).
4. Set RF input.
2
M/A-COM Inc. and its affiliates reserve the right to make changes to the
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
Visit www.macom.com for additional data sheets and product information.
5.0-8 .5 G H z 2 W Po w e r A m p lifie r
M A A PG M 002 1
R O -P-D S -3 06 7 D
50
50
40
30
20
10
0
40
35
30
25
20
15
10
5
POUT
PAE
40
30
20
10
0
VDD = 4
VDD = 8
VDD = 6
VDD = 10
4.5
5.0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
9.0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
9.0
Frequency (GHz)
Frequency (GHz)
Figure 1. Output Power and Power Added Efficiency vs. Frequency
at VDD = 8V and Pin = 18 dBm
Figure 2. 1dB Compression Point vs. Drain Voltage
40
35
30
25
20
15
10
5
1.2
1.0
0.8
0.6
0.4
0.2
0.0
5.0 GHz
5.0 GHz
7.0 GHz
8.5 GHz
7.0 GHz
8.5 GHz
0
-4
-2
0
2
4
6
8
10
12
14
16
18
20
-4
-2
0
2
4
6
8
10
12
14
16
18
20
Frequency (GHz)
PIN (dBm)
Figure 3. Output Power vs. Input Power
at VDD = 8V
Figure 4. Drain Current vs. Input Power
at VDD = 8V
30
6
50
40
30
20
10
0
50
40
30
20
10
0
Gain
Input VSW R
POUT
PAE
Output VSW R
25
20
15
10
5
5
4
3
2
1
4
5
6
7
8
9
10
4.5
5.0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
9.0
Drain Voltage (volts)
Frequency (GHz)
Figure 6. Small Signal Gain and VSW R vs. Frequency at VDD = 8V.
Figure 5. Saturated Output Power and Power Added Efficiency vs. Drain Voltage
at fo = 7 GHz
3
M/A-COM Inc. and its affiliates reserve the right to make changes to the
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
Visit www.macom.com for additional data sheets and product information.
5.0-8 .5 G H z 2 W Po w e r A m p lifie r
M A A PG M 002 1
R O -P-D S -3 06 7 D
APGM0021
Y W W X X X
Figure 6. CR-15 Package Dimensions
The CR-15 is a high frequency, low thermal resistance package. The package consists of a
cofired ceramic construction with a copper-tungsten base and iron-nickel-cobalt leads. The finish
consists of electrolytic gold over nickel plate.
4
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
products for any particular purpose, nor does M/A-COM assume any liability
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
whatsoever arising out of the use or application of any product(s) or
information.
Visit www.macom.com for additional data sheets and product information.
5.0-8 .5 G H z 2 W Po w e r A m p lifie r
M A A PG M 002 1
R O -P-D S -3 06 7 D
Figure 7. Recommended Bias Configuration
VGG
VDD
0.1 mF
0.1 mF
100 pF
100 pF
RFIN
RFOUT
100 pF
100 pF
Pin Number
RF Designator
No Connection
VGG
1
2
3
RF IN
4
VGG
5
No Connection
No Connection
VDD
6
7
8
RF OUT
9
VDD
10
No Connection
Assembly Instructions:
This flange mount style package provides a robust interface between a highly integrated GaAs MMIC device and a circuit board
which may be assembled using conventional surface mount techniques. A thin shim made of a thermally and electrically
conductive, ductile material should be used prior to installation of the CR-15 to improve the thermal and electrical performance of
the package to housing interface. Refer to M/A-COM Application Note #M567* for more information .
For applications where surface mount components are to be installed after the CR-15 installation, this package will not be
damaged when subjected to typical convection or IR oven reflow profiles. Refer to M/A-COM Application Note #M538* for
maximum allowable reflow time and temperature. Alternatively, the package leads may be individually soldered. Whether an iron
or hot gas soldering equipment is used, care should be taken to insure that the temperature is well controlled and electric static
discharge (ESD) safe.
* Application Notes can be found by going to the Site Search Page on M/A-COM‘s web page
(http://www.macom.com/search/search.jsp) and searching for the required Application Note.
Biasing Notes:
á
The 100pF bypass capacitors must be placed as close to the VGG and VDD pins as possible
(recommended < 100 mils).
á
A negative bias must be applied to VGG before applying a positive bias to VDD to prevent damage to the amplifier.
5
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
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