NPT1007 [TE]
Gallium Nitride 28V, 200W RF Power Transistor;
| 型号： | NPT1007 |
| 厂家： | 
TE CONNECTIVITY |
| 描述： | Gallium Nitride 28V, 200W RF Power Transistor |
| 文件： | 总7页 (文件大小：1018K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NPT1007
Gallium Nitride 28V, 200W RF Power Transistor
®
Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology
FEATURES
• Optimized for narrowband and broadband
applications from from DC – 1200MHz
• 200W P3dB CW power at 900MHz in quadrature
combined or push-pull configuration
• 90W CW power from 500-1000MHz in application
design AD-014
• High efficiency from 14V to 28V
• 1.0 °C/W R with maximum TJ rating of 200°C
TH
• Robust up to 10:1 VSWR mismatch at all angles
with no device degradation
DC – 1200 MHz
14 – 28 Volt
GaN HEMT
• Subject to EAR99 export control
RF Specifications (CW): VDS = 28V, IDQ = 1400mA1, Frequency = 900MHz, TA = 25°C, Measured in Nitronex Quadrature
Combined Test Fixture2.
Symbol
Parameter
Min
Typ
Max
Units
P3dB
GSS
h
Average Output Power at 3dB Gain Compression
Small Signal Gain
52.0
17.3
57
53.0
18.3
63
-
-
-
dBm
dB
Drain Efficiency at 3dB Gain Compression21
10:1 VSWR at all phase angles
%
VSWR
No change in device performance
Note 1: 700mA per transistor. Each gate should be biased independently to set desired IDQ
Note 2: Includes ~ 0.2 dB quadrature combiner loss.
.
Typical 2-Tone Performance: VDS = 28V, IDQ = 1400mA1, Frequency = 900MHz, Tone spacing = 1MHz, TA = 25°C
Measured in Nitronex Quadrature Combined Test Fixture2 .
Symbol
Parameter
Typ
Units
P3dB,PEP
P1dB,PEP
PIMD3
Peak Envelope Power at 3dB Gain Compression
Peak Envelope Power at 1dB Gain Compression
Peak Envelope Power at -35dBc IMD3
53.4
52.6
50.8
dBm
dBm
dBm
Note 1: 700mA per transistor. Each gate should be biased independently to set desired IDQ
Note 2: Includes ~ 0.2 dB quadrature combiner loss.
.
NPT1007
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NDS-012 Rev. 3, April 2013
NPT1007
DC Specifications: Per Transistor, TA = 25°C
Symbol
Parameter
Min
Typ
Max
Units
Off Characteristics
Drain-Source Breakdown Voltage
(VGS = -8V, ID = 36mA)
VBDS
IDLK
100
-
-
V
Drain-Source Leakage Current
(VGS = -8V, VDS = 60V)
-
9
18
mA
On Characteristics
Gate Threshold Voltage
(VDS = 28V, ID = 36mA)
VT
-2.3
-2.0
-
-1.8
-1.5
0.13
-1.3
-1.0
0.14
V
V
W
Gate Quiescent Voltage
(VDS = 28V, ID = 700mA)
VGSQ
RON
On Resistance
(VGS = 2V, ID = 270mA)
Drain Current
ID,MAX
(VDS = 7V pulsed, 300ms pulse width,
0.2% duty cycle)
19.0
20.5
-
A
Absolute Maximum Ratings: Not Simultaneous, Per Transistor, TA = 25°C Unless Otherwise Noted
Symbol
Parameter
Max
Units
VDS
VGS
IG
Drain-Source Voltage
100
-10 to 3
180
V
V
Gate-Source Voltage
Gate Current
mA
W
PT
Total Device Power Dissipation (Derated above 25°C), both transistors on
175
Thermal Resistance (Junction-to-Case),
composite for both transistors on, TJ = 180°C
1.0
1.8
qJC
°C/W
Thermal Resistance (Junction-to-Case),
one transistor on, one off, TJ = 180°C
TSTG
TJ
Storage Temperature Range
-65 to 150
200
°C
°C
Operating Junction Temperature
HBM
MM
Human Body Model ESD Rating (per JESD22-A114)
Machine Model ESD Rating (per JESD22-A115)
Charge Device Model ESD Rating (per JESD22-C101)
1C (>1000V)
A (>100V)
CDM
IV (>4000V)
NPT1007
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NDS-012 Rev. 3, April 2013
NPT1007
Load-Pull Data, Reference Plane at Device Leads
VDS=28V, I =700mA, One Single-Ended Transistor, TA=25°C Unless Otherwise Noted
DQ
Table 1: Optimum Source and Load Impedances for CW Gain, Drain Efficiency, and Output Power Performance
Frequency
(MHz)
P
SAT
(dBm)
Drain Efficiency
@ P (%)
Z (W)
S
Z (W)
L
G
(dB)
SS
SAT
500
900
1.4 + j0.1
1.6 - j1.5
1.8 - j2.7
2.0 + j0.5
2.3 - j1.5
3.5 - j2.8
50.0
24.0
70%
74%
62%
50.0
18.5
16.5
1200
49.5
73%
49.5dBm
Figure 2 - Load-Pull Contours, 500MHz,
= 25dBm, Z = 1.4 + j0.1 W
Figure 1 - Optimum Impedances for
P
IN
CW Performance
S
67%
48.5dBm
61%
49.5dBm
Figure 3 - Load-Pull Contours, 900MHz,
= 30dBm, Z = 1.6 - j1.5 W
Figure 4 - Load-Pull Contours, 1200MHz,
= 32dBm, Z = 1.8 - j2.7 W
P
IN
P
IN
S
S
NPT1007
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NDS-012 Rev. 3, April 2013
NPT1007
Load-Pull Data per Device Lead, Reference Plane at Device Leads
VDS=28V, I =700mA, One Single-Ended Transistor, TA=25°C unless otherwise noted.
DQ
Figure 5 - Typical CW Performance,
over Frequency
Figure 6 - Typical CW Performance
over Frequency
Figure 7 - Typical Pulsed Performance,
Figure 8 - Typical CW Performance at V = 20V
DS
Frequency = 900MHz, Duty Cycle = 10%
Frequency = 900MHz
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NDS-012 Rev. 3, April 2013
NPT1007
Nitronex Quadrature Combined Test Fixture
VDS=28V, I =1400mA, TA=25°C unless otherwise noted.
DQ
Figure 9 - Typical IMD3 Performance,
Frequency = 900MHz, Tone spacing = 1MHz
Figure 10 - Typical CW Performance
over Temperature, Frequency = 900MHz
Typical Device Characteristics
VDS=28V, I =700mA, One Single-Ended Transistor, TA=25°C unless otherwise noted.
DQ
Figure 11 - Quiescient Gate Voltage (VGSQ
Required to Reach IDQ over Temperature
)
Figure 12 - MTTF of NRF1 devices as a
function of junction temperature
NPT1007
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NDS-012 Rev. 3, April 2013
NPT1007
Ordering Information
1
Part Number
Description
NPT1007B
NPT1007 in AC780B-4 Metal-Ceramic Bolt-Down Package
1: To find a Nitronex contact in your area, visit our website at http://www.nitronex.com
Figure 13 - AC780B-4 Metal-Ceramic Package Dimensions and Pinout (all dimensions are in inches [mm])
NPT1007
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NDS-012 Rev. 3, April 2013
NPT1007
Nitronex, LLC
2305 Presidential Drive
Durham, NC 27703 USA
+1.919.807.9100 (telephone)
+1.919.807.9200 (fax)
info@nitronex.com
www.nitronex.com
Additional Information
This part is lead-free and is compliant with the RoHS directive
(Restrictions on the Use of Certain Hazardous Substances in Electrical and Electronic Equipment).
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NPT1007
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NDS-012 Rev. 3, April 2013
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