FF60UP30DN [THINKISEMI]
60.0 Ampere,300 Volt Common Cathode Fast Recovery Epitaxial Diode;
| 型号： | FF60UP30DN |
| 厂家： | 
Thinki Semiconductor Co., Ltd. |
| 描述： | 60.0 Ampere,300 Volt Common Cathode Fast Recovery Epitaxial Diode |
| 文件： | 总3页 (文件大小：636K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
FF60UP30DN
FF60UP30DN
Pb Free Plating Product
60.0 Ampere,300 Volt Common Cathode Fast Recovery Epitaxial Diode
TO-3PB/TO-3PN
APPLICATION
Cathode(Bottom Side Metal Heatsink)
· Freewheeling, Snubber, Clamp
· Inversion Welder
· PFC
· Plating Power Supply
· Ultrasonic Cleaner and Welder
· Converter & Chopper
· UPS
Anode
PRODUCT FEATURE
Cathode
· Ultrafast Recovery Time
Internal Configuration
Anode
· Soft Recovery Characteristics
· Low Recovery Loss
Base Backside
· Low Forward Voltage
—
· High Surge Current Capability
· Low Leakage Current
GENERAL DESCRIPTION
FF60UP30DN using the lastest FRED FAB process(planar passivation chip) with ultrafast and soft recovery characteristic.
ABSOLUTE MAXIMUM RATINGS
TC=25°C unless otherwise specified
Symbol
Parameter
Test Conditions
Values
300
300
30
Unit
V
VR
Maximum D.C. Reverse Voltage
Maximum Repetitive Reverse Voltage
VRRM
V
TC=110°C, Per Diode
A
IF(AV)
Average Forward Current
TC=110°C, Per Package
60
A
IF(RMS)
IFSM
RMS Forward Current
Non-Repetitive Surge Forward Current
Power Dissipation
TC=110°C, Per Diode
42
A
A
480
TJ=45°C, t=10ms, 50Hz, Sine
PD
156
-55to +150
-55 to +150
1.1
W
°C
TJ
Junction Temperature
Storage Temperature Range
Module-to-Sink
TSTG
Torque
Rth(J-C)
Weight
°C
Recommended（M3）
N·m
°C /W
g
Thermal Resistance
Junction-to-Case, Per Diode
0.8
6
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise specified
Symbol
Parameter
Test Conditions
Min. Typ. Max.
Unit
10
10
µA
VR=300V
--
--
--
--
--
--
--
--
--
--
--
IRM
Reverse Leakage Current
mA
VR=300V, TJ=125°C
IF=30A
1.25
1.12
22
1.8
--
V
V
VF
Forward Voltage
IF=30A, TJ=125°C
trr
Reverse Recovery Time
IF=1A, VR=30V, diF/dt=-200A/μs
VR=150V, IF=30A
--
ns
ns
A
trr
Reverse Recovery Time
35
--
diF/dt=-200A/μs, TJ=25°C
IRRM
trr
Max. Reverse Recovery Current
Reverse Recovery Time
2.5
70
--
VR=150V, IF=30A
--
ns
A
diF/dt=-200A/μs, TJ=125°C
IRRM
Max. Reverse Recovery Current
6.8
--
Rev.05
© 2006 Thinki Semiconductor Co.,Ltd.
Page 1/3
http://www.thinkisemi.com/
FF60UP30DN
60
50
40
30
20
10
100
80
60
40
20
0
VR=150V
TJ =125°C
IF=60A
TJ =125°C
IF=30A
IF=15A
TJ =25°C
0
0
0.6
0.9
1.2
1.8
1.5
0
200
400
600
800
1000
0.3
diF/dt（A/μs）
VF（V）
Fig1. Forward Voltage Drop vs Forward Current
Fig2. Reverse Recovery Time vs diF/dt
24
600
500
400
VR=150V
TJ =125°C
VR=150V
TJ =125°C
20
16
IF=60A
IF=60A
IF=30A
12
300
200
100
0
IF=30A
IF=15A
IF=15A
8
4
0
0
400
600
1000
800
0
200
400
600
800
1000
200
diF/dt（A/μs）
diF/dt（A/μs）
Fig3. Reverse Recovery Current vs diF/dt
Fig4. Reverse Recovery Charge vs diF/dt
1.2
1
10
1
0.8
0.6
0.4
0.2
Duty
0.5
0.2
0.1
0.05
Single Pulse
10-1
10-2
10-3
trr
IRRM
Qrr
0
0
25
50
100
150
10-4
10-3
10-2
10-1
1
125
75
Rectangular Pulse Duration (seconds)
Fig6. Transient Thermal Impedance
TJ (°C)
Fig5. Dynamic Parameters vs Junction Temperature
Rev.05
© 2006 Thinki Semiconductor Co.,Ltd.
Page 2/3
http://www.thinkisemi.com/
FF60UP30DN
IF
trr
0.25 IRRM
Qrr
IRRM
0.9 IRRM
dIF/dt
Fig7. Diode Reverse Recovery Test Circuit and Waveform
Dimensions in Millimeters
Fig8. Package Outline
Rev.05
© 2006 Thinki Semiconductor Co.,Ltd.
Page 3/3
http://www.thinkisemi.com/
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