SSM6E03TU(TE85L,F) [TOSHIBA]
TRANSISTOR,MOSFET,PAIR,COMPLEMENTARY,20V V(BR)DSS,1.8A I(D),SOT-363VAR;
| 型号： | SSM6E03TU(TE85L,F) |
| 厂家： | 
TOSHIBA |
| 描述： | TRANSISTOR,MOSFET,PAIR,COMPLEMENTARY,20V V(BR)DSS,1.8A I(D),SOT-363VAR |
| 文件： | 总8页 (文件大小：227K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SSM6E03TU
TOSHIBA Multi-Chip Device Silicon P-Channel MOS Type + N-Channel MOS Type
SSM6E03TU
○Power Management Switch Applications
Unit: mm
•
•
•
P-channel MOSFET and 1.8 V drive
N-channel MOSFET and 1.5 V drive
2.1±0.1
1.7±0.1
P-channel MOSFET and N-channel MOSFET incorporated into one
package.
•
Low power dissipation due to P-channel MOSFET that features low
1
2
6
5
R
and low-voltage operation
DS (ON)
Q1 Absolute Maximum Ratings (Ta = 25°C)
4
3
Characteristics
Drain-Source voltage
Symbol
Rating
Unit
−20
± 8
V
V
V
DS
Gate-Source voltage
V
GSS
DC
I
-1.8
-3.6
D
Drain current
A
Pulse
I
(Note 1)
DP
1.Nch source
2.Pch drain
3.Pch drain
4.Pch source
Q2 Absolute Maximum Ratings (Ta = 25°C)
5.Nch gate
6.Pch gate
Nch drain
Characteristics
Drain-Source voltage
Symbol
Rating
Unit
UF6
V
20
± 10
0.1
V
V
DS
JEDEC
―
―
Gate-Source voltage
V
GSS
DC
I
JEITA
D
Drain current
A
Pulse
I
(Note 1)
0.2
DP
TOSHIBA
2-2T1D
Weight: 7.0 mg (typ.)
Absolute Maximum Ratings (Q1, Q2 common)
(Ta = 25°C)
Characteristics
Symbol
(Note 2)
Rating
Unit
Drain power dissipation
Channel temperature
P
0.5
150
W
°C
°C
D
T
ch
Storage temperature range
T
stg
−55 to 150
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Pulse width limited by maximum channel temperature.
Note 2: Mounted on an FR4 board (25.4 mm × 25.4 mm × 1.6 mm, Cu pad: 645 mm2)
Marking
Equivalent Circuit (top view)
6
5
4
6
5
4
Q1
KTC
Q2
1
2
3
1
2
3
1
2009-10-07
SSM6E03TU
Q1 Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
V
V
V
I
I
= -1 mA, V
= -1 mA, V
= 0
-20
-12
⎯
⎯
⎯
⎯
⎯
(BR) DSS
(BR) DSX
D
D
GS
GS
Drain–source breakdown voltage
= +8 V
Drain cutoff current
I
V
V
V
V
= -20 V, V
= 0
⎯
-10
±1
μA
μA
V
DSS
GSS
DS
GS
DS
DS
GS
Gate leakage current
Gate threshold voltage
Forward transfer admittance
I
= ±8 V, V
= 0
⎯
⎯
DS
V
= -3 V, I = -1 mA
-0.3
1.8
⎯
⎯
-1.0
⎯
th
D
⏐Y ⏐
= -3 V, I = -1 A
(Note 3)
(Note 3)
(Note 3)
(Note 3)
3.7
105
138
190
335
70
S
fs
D
I
I
I
= -1.0 A, V
= -0.5 A, V
= -0.2 A, V
= -4 V
144
180
335
⎯
D
D
D
GS
GS
GS
Drain–source ON-resistance
R
mΩ
= -2.5 V
= -1.8 V
⎯
DS (ON)
⎯
Input capacitance
C
C
⎯
iss
V
= -10 V, V
= 0, f = 1 MHz
GS
pF
Output capacitance
⎯
⎯
DS
oss
Reverse transfer capacitance
C
⎯
56
⎯
rss
on
Turn-on time
Switching time
t
t
V
V
= -10 V, I = -1.0 A,
⎯
20
⎯
DD
GS
D
ns
V
= 0 to -2.5 V, R = 4.7 Ω
Turn-off time
⎯
20
⎯
G
off
Drain–source forward voltage
Note 3: Pulse test
V
I
= 1.8 A, V = 0
GS
(Note 3)
⎯
0.85
1.2
DSF
D
Q2 Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Drain-Source breakdown voltage
Drain cut-off current
V
I
= 0.1 mA, V
= 0
= 0
20
⎯
⎯
0.6
40
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
1
V
μA
μA
V
(BR) DSS
D
GS
I
V
V
V
V
= 20 V, V
DSS
DS
GS
DS
DS
GS
Gate leakage current
I
= ±10 V, V = 0
DS
⎯
±1
1.1
⎯
3.0
4.0
15
⎯
⎯
⎯
⎯
⎯
GSS
Gate threshold voltage
Forward transfer admittance
V
= 3 V, I = 0.1 mA
⎯
th
D
|Y |
fs
= 3 V, I = 10 m A
(Note 3)
⎯
mS
D
I
I
I
= 10 mA, V
= 4 V
(Note 3)
(Note 3)
(Note 3)
1.5
2.2
5.2
9.3
9.8
4.5
70
D
D
D
GS
GS
Drain-Source on-resistance
R
Ω
= 10 mA, V
= 1 mA, V
= 2.5 V
DS (ON)
= 1.5 V
GS
Input capacitance
C
iss
V
= 3 V, V
GS
= 0
DS
pF
ns
Output capacitance
C
oss
f = 1 MHz
Reverse transfer capacitance
C
rss
on
Turn-on time
t
t
V
V
= 3 V, I = 10 mA,
D
DD
GS
Switching time
= 0 to 2.5 V, R = 50 Ω
G
Turn-off time
125
off
Note 3: Pulse test
2
2009-10-07
SSM6E03TU
Switching Time Test Circuit (Q1)
(a) Test circuit
(b) V
(c) V
IN
0 V
10%
OUT
0
IN
90%
−2.5 V
−2.5V
R
L
V
DS (ON)
90%
10%
OUT
10 μs
V
DD
V
= − 10 V
DD
V
DD
R
G
= 4.7 Ω
t
t
r
f
Duty ≤ 1%
: t , t < 5 ns
Common Source
V
IN
r f
t
t
off
on
Ta = 25°C
Switching Time Test Circuit (Q2)
(a) Test circuit
(b) V
(c) V
IN
2.5 V
0 V
90%
OUT
2.5 V
0
IN
10%
R
L
V
10 μs
OUT
DD
V
DD
10%
90%
V
= 3 V
DD
Duty ≤ 1%
: t , t < 5 ns
V
DS (ON)
V
IN
(Z
r f
= 50 Ω)
t
t
f
r
out
Common Source
t
t
off
on
Ta = 25°C
Precaution(Pch)
V
th
can be expressed as the voltage between the gate and source when the low operating current value is I = -1mA
D
for this product. For normal switching operation, V
requires a higher voltage than V and V
requires a
GS (on)
th
GS (off)
lower voltage than V . (The relationship can be established as follows: V
th
< V < V
)
GS (off)
th
GS (on).
Be sure to take this into consideration when using the device.
Precaution(Nch)
V
th
can be expressed as the voltage between the gate and source when the low operating current value is I = 0.1mA
D
for this product. For normal switching operation, V
requires a higher voltage than V and V
requires a
GS (on)
th
GS (off)
lower voltage than V . (The relationship can be established as follows: V
th
< V < V
)
GS (off)
th
GS (on).
Be sure to take this into consideration when using the device.
Handling Precaution
When handling individual devices (which are not yet mounted on a circuit board), ensure that the environment is
protected against static electricity. Operators should wear anti-static clothing, and containers and other objects that come
into direct contact with devices should be made of anti-static materials.
Thermal resistance R
and drain power dissipation P vary depending on board material, board area, board
D
th (j-a)
thickness and pad area. When using this device, please take heat dissipation into consideration.
3
2009-10-07
SSM6E03TU
Q1 (Pch MOSFET)
ID - VDS
ID - VGS
-10
-1
-5
-4
-3
-2
-1
0
-10
-4
Common Source
VDS = -3 V
Common Source
-2.5
Ta = 25
℃
-0.1
-1.8
25
℃
-25
℃
-0.01
-0.001
-0.0001
Ta = 85
℃
-1.5
VGS = -1.2 V
0
-0.2
-0.4
-0.6
-0.8
-1
0
-0.2 -0.4 -0.6 -0.8
-1
-1.2 -1.4 -1.6 -1.8
-2
-2.2 -2.4
Gate-Source Voltage VGS (V)
Drain-Source Voltage VDS (V)
RDS (ON) - VGS
RDS (ON) - Ta
300
200
100
0
300
250
200
150
100
50
Common Source
Ta = 25
Common Source
-0.5 A
ꢀ
℃
-1.8 V, -0.2 A
ID = -1 A
-0.2 A
-2.5 V, -0.5 A
VGS = -4 V, ID = -1 A
0
-60
-35
-10
15
40
65
90
115
140
−4
−7
−8
−9
−10
0
−1
−2
−
3
−
5
−
6
Ambient Temperature Ta (℃)
Gate-Source Voltage VGS (V)
RDS (ON) - ID
Vth - Ta
300
250
200
150
100
50
-1.4
-1.2
-1
Common Source
Ta = 25
℃
Common Source
ID = -1 mA
VDS = -3 V
VGS = -1.8 V
-0.8
-0.6
-0.4
-0.2
-0
-2.5 V
-4 V
0
0
-1
-2
-3
-4
-5
-25
0
25
50
75
100
125
150
Drain Current ID (A)
Ambient Temperature Ta (℃)
4
2009-10-07
SSM6E03TU
Q1 (Pch MOSFET)
|Yfs| - ID
IDR - VDS
10
1
10
Common Source
VGS = 0
Common Source
VDS = -3 V
Ta = 25
Ta = 25
℃
℃
25
℃
25
℃
Ta = 85
℃
-25
℃
-25
℃
0.1
1
Ta = 85
℃
0.01
0.001
0.1
0
0.2
0.4
0.6
0.8
1
1.2
1.4
-0.01
-0.1
-1
-10
Drain-Source Voltage VDS (V)
Drain Current ID (A)
C - VDS
t - ID
1000
100
10
1000
100
10
Common Source
VDD = -10 V
VGS = 0 to -2.5 V
Ta = 25
℃
toff
Ciss
tf
Coss
Crss
ton
tr
Common Source
VGS = 0 V
f = 1 MHz
Ta = 25
℃
1
-0.1
-1
-10
-100
−0.01
−0.1
−1
−10
Drain-Source Voltage VDS (V)
Drain Current ID (A)
PD - Ta
1000
Mounted on an FR4 board
(25.4mm×25.4mm×1.6mm)
Cu Pad :25.4mm×25.4mm
800
600
400
200
0
0
20
40
60
80
100
120
140
160
Ambient Temperature Ta (°C)
5
2009-10-07
SSM6E03TU
Q2 (Nch MOSFET)
I
– V
I – V
D GS
D
DS
250
1000
100
10
Common source
Common source
2.5
2.3
Ta = 25 °C
V
= 3 V
DS
4
3
200
150
100
50
10
2.1
1.9
Ta = 100°C
25°C
−25°C
1.7
1
1.5
0.1
V
= 1.3 V
GS
0
0
0.01
0.5
1
1.5
2
0
1
2
3
Drain-Source voltage
V
DS
(V)
Gate-Source voltage
V
(V)
GS
R
– I
R
– V
DS (ON)
D
DS (ON) GS
12
10
8
6
5
4
3
2
1
0
Common source
Common source
= 10 mA
Ta = 25 °C
I
D
V
= 1.5 V
GS
6
Ta = 100°C
4
25°C
2.5 V
4 V
2
−25°C
0
1
10
100
1000
0
2
4
6
8
10
Drain current
I
(mA)
Gate-Source voltage
V
(V)
GS
D
R
– Ta
V
– Ta
th
DS (ON)
8
6
4
2
2
Common source
Common source
I
= 0.1 mA
D
V
= 3 V
DS
1.6
V
= 1.5 V, I = 1 mA
GS
D
1.2
0.8
0.4
0
2.5 V, 10 mA
4 V, 10 mA
0
−25
0
25
50
75
100
125
150
−25
0
25
50
75
100
125
150
Ambient temperature Ta (°C)
Ambient temperature Ta (°C)
6
2009-10-07
SSM6E03TU
Q2 (Nch MOSFET)
⎪Y ⎪ – I
fs
I
– V
DR DS
D
500
250
200
150
100
50
Common source
= 0 V
Common source
300
V
GS
V
= 3 V
DS
Ta = 25 °C
Ta = 25 °C
D
100
50
30
I
DR
G
S
10
5
3
1
1
0
0
−0.2
−0.4
−0.6
−0.8
−1
−1.2
−1.4
10
100
1000
Drain current
I
(mA)
Drain-Source voltage
V
DS
(V)
D
C – V
t – I
D
DS
100
5000
3000
Common source
V
V
= 3 V
= 0 to 2.5 V
50
30
DD
GS
t
off
Ta = 25 °C
1000
10
500
300
t
f
C
iss
5
3
C
oss
C
rss
100
Common source
= 0 V
t
on
V
1
GS
50
30
f = 1 MHz
Ta = 25 °C
t
r
0.5
0.3
0.1
0.5
1
5
10
50 100
30
0.3
3
10
0.1
1
10
100
Drain-Source voltage
V
DS
(V)
Drain current
I
(mA)
D
7
2009-10-07
SSM6E03TU
RESTRICTIONS ON PRODUCT USE
•
•
•
Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information
in this document, and related hardware, software and systems (collectively “Product”) without notice.
This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with
TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission.
Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. Customers are
responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and
systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily
injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the
Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of
all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes
for Product and the precautions and conditions set forth in the “TOSHIBA Semiconductor Reliability Handbook” and (b) the
instructions for the application with which the Product will be used with or for. Customers are solely responsible for all aspects of their
own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such
design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts,
diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating
parameters for such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS’ PRODUCT DESIGN OR
APPLICATIONS.
•
Product is intended for use in general electronics applications (e.g., computers, personal equipment, office equipment, measuring
equipment, industrial robots and home electronics appliances) or for specific applications as expressly stated in this document.
Product is neither intended nor warranted for use in equipment or systems that require extraordinarily high levels of quality and/or
reliability and/or a malfunction or failure of which may cause loss of human life, bodily injury, serious property damage or serious
public impact (“Unintended Use”). Unintended Use includes, without limitation, equipment used in nuclear facilities, equipment used
in the aerospace industry, medical equipment, equipment used for automobiles, trains, ships and other transportation, traffic signaling
equipment, equipment used to control combustions or explosions, safety devices, elevators and escalators, devices related to electric
power, and equipment used in finance-related fields. Do not use Product for Unintended Use unless specifically permitted in this
document.
•
•
Do not disassemble, analyze, reverse-engineer, alter, modify, translate or copy Product, whether in whole or in part.
Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any
applicable laws or regulations.
•
•
The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any
infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to
any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise.
ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE
FOR PRODUCT, AND TO THE MAXIMUM EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITY
WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR
LOSS, INCLUDING WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND
LOSS OF DATA, AND (2) DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO
SALE, USE OF PRODUCT, OR INFORMATION, INCLUDING WARRANTIES OR CONDITIONS OF MERCHANTABILITY, FITNESS
FOR A PARTICULAR PURPOSE, ACCURACY OF INFORMATION, OR NONINFRINGEMENT.
•
•
Do not use or otherwise make available Product or related software or technology for any military purposes, including without
limitation, for the design, development, use, stockpiling or manufacturing of nuclear, chemical, or biological weapons or missile
technology products (mass destruction weapons). Product and related software and technology may be controlled under the
Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product
or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations.
Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product.
Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances,
including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of
noncompliance with applicable laws and regulations.
8
2009-10-07
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