TPCP8202(TE85LFM [TOSHIBA]
Small Signal Field-Effect Transistor;型号: | TPCP8202(TE85LFM |
厂家: | TOSHIBA |
描述: | Small Signal Field-Effect Transistor |
文件: | 总7页 (文件大小:245K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
TPCP8202
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSIV)
TPCP8202
Portable Equipment Applications
Motor Drive Applications
DC-DC Converters
Unit: mm
0.33±0.05
A
M
0.05
5
8
•
•
•
•
•
Lead(Pb)-Free
Low drain-source ON-resistance: R
= 19 mΩ (typ.)
DS(ON)
High forward transfer admittance: |Y | = 20 S (typ.)
fs
0.475
1
4
B
Low leakage current: I
= 10 μA (max)(V = 30 V)
DS
DSS
B
M
0.05
0.65
2.9±0.1
A
Enhancement model: V = 0.7 to 1.4V
th
0.8±0.05
(V = 10 V, I = 200 μA)
DS
D
S
0.025
+0.1
S
0.28
0.17±0.02
-0.11
Absolute Maximum Ratings (Ta = 25°C)
+0.13
-0.12
1.12
1.12
Characteristic
Drain-source voltage
Symbol
Rating
Unit
+0.13
-0.12
V
30
30
V
V
V
DSS
+0.1
0.28
1. Source1
2. Gate1
5. Drain2
-0.11
Drain-gate voltage (R
Gate-source voltage
= 20 kΩ)
V
GS
DGR
6. Dain2
7. Drain1
8. Drain1
V
±12
5.5
22
GSS
3. Source2
4. Gate2
DC
Pulse
(Note 1)
(Note 1)
I
D
Drain current
A
JEDEC
JEITA
⎯
I
DP
Single-device operation
(Note 3a)
⎯
P
P
P
P
1.48
1.23
0.58
0.36
D (1)
Drain power
dissipation
(t = 5 s) (Note 2a)
TOSHIBA
2-3V1G
Single-device value at
dual operation (Note 3b)
D (2)
D (1)
D (2)
Weight: 0.017 g (typ.)
W
Single-device operation
(Note 3a)
Drain power
dissipation
Single-device value at
dual operation (Note 3b)
(t = 5 s) (Note 2b)
Circuit Configuration
Single-pulse avalanche energy
Avalanche current
(Note 4)
E
7.86
5.5
mJ
A
AS
8
7
5
6
I
AR
Repetitive avalanche energy
Single-device value at dual operation
E
0.12
mJ
AR
(Note 2a, 3b, 5)
Channel temperature
T
150
°C
°C
ch
Storage temperature range
T
stg
−55 to 150
Note: For Notes 1 to 6, see the next page.
1
2
4
3
Using continuously under heavy loads (e.g. the application of high
Marking (Note 6)
temperature/current/voltage and the significant change in temperature,
etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage,
etc.) are within the absolute maximum ratings. Please design the
appropriate reliability upon reviewing the Toshiba Semiconductor
Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and
estimated failure rate, etc).
8
7
6
5
8202
※
This transistor is an electrostatic-sensitive device. Handle with care.
1
2
3
4
Lot No.
1
2008-03-21
TPCP8202
Thermal Characteristics
Characteristic
Symbol
Max
84.5
Unit
Single-device operation
(Note 3a)
R
R
R
R
th (ch-a) (1)
th (ch-a) (2)
th (ch-a) (1)
th (ch-a) (2)
Thermal resistance,
channel to ambient
°C/W
Single-device value at
(Note 2a)
(t = 5 s)
101.6
215.5
347.2
dual operation (Note 3b)
Single-device operation
(Note 3a)
Thermal resistance,
channel to ambient
°C/W
Single-device value at
(Note 2b)
(t = 5 s)
dual operation (Note 3b)
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: (a) Device mounted on a glass-epoxy board (a)
25.4
(b) Device mounted on a glass-epoxy board (b)
FR-4
FR-4
25.4 × 25.4 × 0.8
(Unit: mm)
25.4 × 25.4 × 0.8
(Unit: mm)
(a)
(b)
Note 3: a) The power dissipation and thermal resistance values shown are for a single device.
(During single-device operation, power is applied to one device only.)
b) The power dissipation and thermal resistance values shown are for a single device.
(During dual operation, power is applied to both devices evenly.).
Note 4: V
= 24 V, T = 25°C (initial), L = 0.2 mH, R = 25 Ω, I
= 5.5 A
AR
DD
ch
G
Note 5: Repetitive rating: Pulse width limited by maximum channel temperature.
Note 6: ● on the lower left of the marking indicates Pin 1.
* Weekly code (three digits):
Week of manufacture
(01 for the first week of the year, continuing up to 52 or 53)
Year of manufacture
(The last digit of the year)
2
2008-03-21
TPCP8202
Electrical Characteristics (Ta = 25°C)
Characteristic
Gate leakage current
Symbol
Test Condition
= ±10 V, V = 0 V
Min
Typ.
Max
Unit
I
V
V
⎯
⎯
30
15
0.7
⎯
⎯
⎯
10
⎯
⎯
⎯
⎯
⎯
±10
10
⎯
μA
μA
GSS
GS
DS
DS
Drain cutoff current
I
= 30 V, V
= 0 V
= 0 V
DSS
GS
GS
GS
V
V
I
I
= 10 mA, V
= 10 mA, V
⎯
(BR) DSS
(BR) DSX
D
D
Drain-source breakdown voltage
Gate threshold voltage
V
V
= -12 V
⎯
⎯
V
V
V
V
V
V
= 10 V, I = 200 μA
⎯
1.4
39
24
23
⎯
th
DS
GS
GS
GS
DS
D
R
= 2.5 V, I = 2.8 A
29
DS (ON)
DS (ON)
DS (ON)
D
Drain-source ON-resistance
mΩ
S
R
R
= 4.0 V, I = 2.8A
20
D
= 4.5 V, I = 2.8A
19
D
Forward transfer admittance
Input capacitance
|Y |
fs
= 10 V, I = 2.8A
20
D
C
C
2150
155
165
⎯
iss
V
= 10 V, V
= 0 V, f = 1 MHz
GS
pF
Reverse transfer capacitance
Output capacitance
⎯
DS
rss
C
⎯
oss
5V
I = 2.8 A
D
Rise time
t
⎯
⎯
⎯
⎯
⎯
10
20
19
90
28
⎯
⎯
⎯
⎯
⎯
r
V
GS
0 V
Turn-on time
Switching time
t
on
ns
Fall time
t
f
V
DD ≈ 15 V
Turn-off time
t
Duty ≤ 1%, t = 10 μs
off
w
Total gate charge
Q
g
(gate-source plus gate-drain)
V
DD ≈ 24 V, V
= 5 V, I = 5.5 A
nC
GS
D
Gate-source charge1
Q
⎯
⎯
4
8
⎯
⎯
gs1
Gate-drain (“Miller”) charge
Q
gd
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Drain reverse current
Forward voltage (diode)
Pulse (Note 1)
I
⎯
⎯
⎯
⎯
⎯
22
A
V
DRP
V
I
= 5.5 A, V = 0 V
GS
-1.2
DSF
DR
3
2008-03-21
TPCP8202
I
– V
I – V
D DS
D
DS
4.0
4.0
5
4
3
2
1
0
10
8
2.2
2.3
Common source
Ta = 25°C Single Pulse test
Common source
Ta = 25°C Single Pulse test
2.0
2.1
2.5
2.1
2.2
1.9
2.3
2.0
1.9
6
1.8
1.7
4
1.8
1.7
2
V
= 1.6 V
GS
4
V
= 1.6 V
GS
0
0
0.4
0.8
1.2
1.6
2
0
1
2
3
5
Drain−source voltage
V
(V)
Drain−source voltage
V
(V)
DS
DS
I
D
– V
V
– V
DS GS
GS
2.0
1.6
1.2
0.8
10
8
Common source
= 10 V
Common source
Ta = 25°C
V
DS
Single Pulse test
Single Pulse test
6
4
100°C
5.5
1.4
2.8
0.4
0.0
2
ID= 11A
25°C
Ta = −55°C
0
0
2
4
6
8
10
0
0.5
1.0
1.5
2.0
2.5
3.0
Gate−source voltage
V
(V)
Gate−source voltage
V
(V)
GS
GS
|Y | – I
fs
R
– I
DS (ON) D
D
100
10
1
100
10
1
Common source
= 10 V
Common source
Ta = 25°C
V
DS
Single Pulse test
Single Pulse test
V
= 2.5 V
GS
Ta = −55°C
25°C
4.0
4.5
100°C
0.1
0.1
1
10
100
0.1
1
10
100
Drain current
I
(A)
Drain current
I
(A)
D
D
4
2008-03-21
TPCP8202
R
– Ta
I
– V
DR DS
DS (ON)
50
10
Common source
Single Pulse test
4
5.5 A
40
30
20
2.8 A
2
4.0 V
4.5 V
V
= 2.5 V
GS
1
V
= 0 V
GS
I
= 1.4 A
D
1
I
= 1.4,2.8,5.5 A
D
10
0
Common source
Ta = 25°C
Single Pulse test
0.1
−80
−40
0
40
80
120
160
0
− 0.2
− 0.4
− 0.6
− 0.8
− 1
Ambient temperature Ta (°C)
Drain−source voltage
V
(V)
DS
C – V
V
– Ta
th
DS
10000
1000
100
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
C
iss
C
oss
C
rss
Common source
V
= 10 V
DS
= 0.2 mA
Common source
= 0 V
I
D
V
Pulse test
GS
f = 1 MHz
Ta = 25°C
−80
−40
0
40
80
120
160
10
0.1
Ambient temperature Ta (°C)
1
10
100
Drain−source voltage
V
(V)
DS
Dynamic input/output
characteristics
P
– Ta
D
2.0
1.5
35
30
7
6
Device mounted on a glass-epoxy board (a)
(Note 2a)
(1) Single-device operation
(2) Single-device value at dual operation
(Note 3b)
Device mounted on a glass-epoxy board (b)
(Note 2b)
(3) Single-device operation
(4) Single-device value at dual operation
(Note 3b)
Common source
I = 5.5 A
D
(Note 3a)
Ta = 25°C
Pulse test
(1)
(2)
12V
V
25
20
15
10
5
4
3
2
DS
V
GS
(Note 3a)
6V
t = 5 s
1.0
0.5
V
= 24V
DD
(3)
(4)
5
0
1
0
36
0
0
4
8
12
16
20
24
28
32
0
40
80
120
160
200
Total gate charge
Q
g
(nC)
Ambient temperature Ta (°C)
5
2008-03-21
TPCP8202
r
th
– t
w
1000
100
10
(4)
(3)
Single pulse
(2)
(1)
Device mounted on a glass-epoxy board (a) (Note 2a)
(1) Single-device operation
(2) Single-device value at dual operation
(Note 3a)
(Note 3b)
Device mounted on a glass-epoxy board (b) (Note 2b)
(3) Single-device operation
(4) Single-device value at dual operation
(Note 3a)
(Note 3b)
1
0.001
0.01
0.1
1
10
100
1000
Pulse width
t
(s)
w
Safe operating area
100
I
max (pulse)*
D
1 ms*
10
10 ms*
1
*: Single nonrepetitive pulse
Ta = 25°C
Curves must be derated
linearly with increase in
temperature.
V
max
DSS
0.1
0.1
1
10
100
Drain−source voltage
V
(V)
DS
6
2008-03-21
TPCP8202
RESTRICTIONS ON PRODUCT USE
20070701-EN GENERAL
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
7
2008-03-21
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