EGF1C [TSC]
1.0 AMP. Surface Mount Glass Passivated Junction High Efficient Rectifiers; 1.0 AMP 。表面安装玻璃钝化结高效整流二极管
| 型号： | EGF1C |
| 厂家： | 
TAIWAN SEMICONDUCTOR COMPANY, LTD |
| 描述： | 1.0 AMP. Surface Mount Glass Passivated Junction High Efficient Rectifiers |
| 文件： | 总2页 (文件大小：51K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
EGF1A THRU EGF1M
1.0 AMP. Surface Mount Glass Passivated Junction High Efficient Rectifiers
Voltage Range
50 to 1000 Volts
Current
1.0 Ampere
SMA/DO-214AC
Features
.062(1.58)
.050(1.27)
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Ideal for surface mount automotive applications
Glass passivated cavity-free junction
Easy pick and place
Capable of meeting enviromental standard of
MIL-S-19500
Plastic material used carries Underwriters
Laboratory Classification 94V-O
Compete device submersible temperature of 265OC
for 10 sec in solder bath.
.111(2.83)
.090(2.29)
.187(4.75)
.160(4.06)
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.091(2.30)
.078(1.99)
Mechanical Data
.012(.31)
.006(.15)
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Case: Molded plastic
Terminals: Solder plated
Polarity: Indicated by cathode band
Packaging: 12mm tape per EIA STD RS-481
Weight: 0.120 gram
.008(.20)
.004(.10)
.056(1.41)
.035(0.90)
.210(5.33)
.195(4.95)
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25℃ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
EGF EGF EGF EGF EGF EGF EGF EGF
Symbol
Type Number
Units
1A
1B
1C
1D
1G
1J
1K
1M
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
50 100 150 200 400 600 800 1000
35 70 105 140 280 420 560 700
50 100 150 200 400 600 800 1000
V
V
V
VRRM
VRMS
VDC
Maximum DC Blocking Voltage
Maximum Average Forward Rectified
Current @TL =125℃
1.0
A
A
V
I(AV)
IFSM
VF
Peak Forward Surge Current, 8.3 ms Single
Half Sine-wave Superimposed on Rated
Load (JEDEC method )
Maximum Instantaneous Forward Voltage
@ 1.0A
Maximum DC Reverse Current
@TA =25℃ at Rated DC Blocking Voltage
@ TA=125℃
30
1.0
1.3
1.7
75
5
100
uA
uA
IR
Maximum Reverse Recovery Time
(Note 1 )
Trr
Cj
50
nS
pF
Typical Junction Capacitance ( Note 2 )
Typical Thermal Resistance (Note 3)
15
85.0
30.0
RθJA
RθJL
℃/W
Operating Temperature Range
Storage Temperature Range
℃
℃
TJ
-65 to +175
TSTG
-65 to +175
Notes: 1. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A
2. Measured at 1 MHz and Applied VR=4.0 Volts
3. Thermal Resistance from Junction to Ambient and from Junction to Lead P.C.B. Mounted on
0.2 x 0.2” (5.0 x 5.0mm) Copper Pad Areas.
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RATINGS AND CHARACTERISTIC CURVES (EGF1A THRU EGF1M)
FIG.2- MAXIMUM NON-REPETITVE PEAK FORWARD
SURGE CURRENT
FIG.1- MAXIMUM FORWARD CURRENT DERATING
CURVE
30
25
20
15
10
5.0
0
1.0
0.5
0
Tj = Tj MAX
8.3ms Single Half Sine Wave
(JEDEC Method)
RESISTIVE OR INDUCTIVE LOAD
P.C.B. MOUNTED ON 0.2 X 0.2"
(5.0X5.0mm) COPPER PAD AREAS
0
25
50
75
100
125
150
175
1
10
100
LEAD TEMPERATURE (OC)
NUMBER OF CYCLES AT 60 Hz
FIG.3- TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
FIG.4- TYPICAL REVERSE LEAKAGE
CHARACTERISTICS
1000
50
10
100
10
Tj = 150OC
Tj = 100OC
Tj = 150OC
Tj = 25OC
1
1
PULSE WIDTH-300
1% DUTY CYCLE
S
0.1
0.1
Tj = 25OC
0.01
0.01
0
20
40
60
80
100
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
INSTANTANEOUS FORWARD VOLTAGE (V)
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
FIG.6- TYPICAL TRANSIENT THERMAL IMPEDANCE
FIG.5- TYPICAL JUNCTION CAPACITANCE
100
70
60
Tj=25OC
f=1.0MHz
Vsig=50mVp-p
50
40
10
30
20
1
10
0
0.1
0.1
1
10
100
0.01
0.1
1
10
100
REVERSE VOLTAGE (V)
PULSE DURATION. SECRETARY (T)
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