IRLML2502 [TYSEMI]
Ultra Low On-Resistance N-Channel MOSFET Fast switching.; 超低导通电阻的N沟道MOSFET的快速开关。
| 型号： | IRLML2502 |
| 厂家： | 
TY Semiconductor Co., Ltd |
| 描述： | Ultra Low On-Resistance N-Channel MOSFET Fast switching. |
| 文件： | 总2页 (文件大小：289K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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II
CC
I
C
Product specification
IRLML2502
SOT-23
Unit: mm
+0.1
2.9-0.1
■ Features
+0.1
0.4-0.1
3
● Ultra Low On-Resistance
● N-Channel MOSFET
● Fast switching.
1
2
+0.1
+0.05
0.95-0.1
0.1-0.01
+0.1
1.9-0.1
1.Gate
2.Soruce
3.Drain
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Drain-Source Voltage
Symbol
VDS
Rating
20
Unit
V
V
Gate-to-source voltage
VGS
±12
4.2
A
Continuous drain curent, @ VGS=4.5V,TA=25℃
Continuous drain curent, @ VGS=4.5V,TA=70℃
Pulsed drain current *1
ID
3.4
A
IDM
PD
33
A
1.25
W
℃/W
℃
Power dissipation
@ TA=25℃
Thermal Resistance,Junction- to-Ambient
Junction and storage temperature range
RθJA
100
TJ,TSTG
-55 to +150
*1.Reptitive rating:pulse width limited by max.junction temperature.
*2.ISD≤ 0.93A,di/dt≤ 90A/μs,VDD ≤V(BR)DSS,TJ≤150℃
http://www.twtysemi.com
sales@twtysemi.com
1 of 2
4008-318-123
MMMOOOSSSFFFEEETTT
II
CC
I
C
Product specification
IRLML2502
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test conditons
ID= 250 μA, VGS = 0V
Min
20
Typ Max
Unit
V
Drain-source Breakdown voltage
VDSS
VDS = 16 V, VGS = 0V
VDS = 16 V, VGS = 0V, TJ=125℃
VGS=±12V,VDS=0V
VDS = VGS, ID= 250 μA
ID= 4.2A, VGS = 4.5V
ID= 3.6A, VGS =2.5V
VDS = 10 V, ID = 4 A
VDS = 15V,
1
25
Gate-source leakage current
IDSS
μA
Gate-source leadage
Gate threshold voltage
IGSS
nA
V
±100
1.2
47
VGS(th)
0.6
5.8
Static drain-source on- resistance
RDS(on)
mΩ
83
Forward Transconductance
Input capacitance
gfs
Ciss
Coss
Crss
Qg
S
745
93
pF
nC
Output capacitance
Reverse transfer capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-on delay time
Rise time
VGS = 0 V,
f= 1MHz
67
2.6
3.9
VDS =10V ,VGS = 5 V , ID= 4 A
Qgs
Qgd
td(on)
tr
0.41 0.62
1.1
7.5
10
1.7
VDD= 10 V, ID= 1A,
ns
Turn-off delay time
Fall time
td(off)
tf
54
RD= 10Ω,RG= 6Ω
26
Reverse recovery time
Reverse recovery charge
trr
24
13
ns
TJ=25℃, IF =1.3 A,
di / dt = 100 A/μs *2
Qrr
nC
MOSFET symbo
l showing the
integral reverse
p-n junction diode
Continuous source current
IS
1.3
A
V
Pulsed source current *1
Diode forward voltage
ISM
33
VSD
1.2
TJ=25℃,VGS = 0 V, IS = 1.3 A *2
*1 Repetitive rating;pulse width limited by max.junction temperature.
* 2 Pulse width ≤ 300μs, Duty cycle ≤ 2%
http://www.twtysemi.com
sales@twtysemi.com
2 of 2
4008-318-123
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