KI5404BDC [TYSEMI]

TrenchFET Power MOSFET Drain-Source Voltage VDS 20 V; TrenchFET功率MOSFET漏源电压VDS 20 V
KI5404BDC
型号: KI5404BDC
厂家: TY Semiconductor Co., Ltd    TY Semiconductor Co., Ltd
描述:

TrenchFET Power MOSFET Drain-Source Voltage VDS 20 V
TrenchFET功率MOSFET漏源电压VDS 20 V

文件: 总2页 (文件大小:163K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
MOSFIECICT  
Product specification  
KI5404BDC  
Features  
TrenchFET Power MOSFET  
Absolute Maximum Ratings Ta = 25  
Parameter  
Drain-Source Voltage  
Symbol  
VDS  
5 secs  
Steady State  
20  
12  
Unit  
V
Gate-Source Voltage  
VGS  
7.5  
5.4  
TA = 25  
ID  
Continuous Drain Current (TJ = 150 ) *  
TA = 70  
A
Pulsed Drain Current  
20  
IDM  
IS  
Continuous Source Current *  
2.1  
2.5  
1.3  
1.1  
1.3  
0.7  
TA = 25  
TA = 70  
Maximum Power Dissipation *  
PD  
W
Operating Junction and Storage Temperature Range  
Soldering Recommendations (Peak Temperature)  
Parameter  
-55 to 150  
260  
TJ, Tstg  
Symbol  
RthJA  
Typ  
45  
Max  
50  
Unit  
t
5 sec  
Maximum Junction-to-Ambienta  
/W  
Steady-State  
Steady-State  
80  
95  
Maximum Junction-to-Foot (Drain)  
RthJF  
18  
22  
* Surface Mounted on 1" X 1' FR4 Board.  
http://www.twtysemi.com  
1of 2  
sales@twtysemi.com  
4008-318-123  
MOSFIECICT  
Product specification  
KI5404BDC  
Electrical Characteristics Ta = 25  
Parameter  
Gate Threshold Voltage  
Gate-Body Leakage  
Symbol  
Testconditons  
Min  
0.6  
Typ  
Max  
1.5  
100  
1
Unit  
V
VGS(th) VDS = VGS, ID = 250 ìA  
IGSS  
IDSS  
nA  
A
VDS = 0 V, VGS = 12 V  
VDS = 20 V, VGS = 0 V  
Zero Gate Voltage Drain Current  
On-State Drain Current*  
5
VDS = 20 V, VGS = 0 V, TJ = 85  
A
ID(on)  
20  
A
VDS  
5 V, VGS = 4.5 V  
VGS = 4.5 V, ID = 5.4 A  
VGS = 2.5 V, ID = 2.6 A  
VDS = 10 V, ID = 5.4 A  
IS = 1.1 A, VGS = 0 V  
0.022  
0.031  
26  
0.028  
0.039  
Drain-Source On-State Resistance*  
rDS(on)  
Forward Transconductance*  
Schottky Diode Forward Voltage*  
Total Gate Charge  
gfs  
VSD  
Qg  
S
0.7  
7
V
11  
nC  
nC  
nC  
Gate-Source Charge  
Gate-Drain Charge  
Qgs  
Qgd  
Rg  
VDS = 10 V, VGS = 4.5 V, ID = 5.4 A  
1.7  
2
Gate Resistance  
1.7  
12  
Turn-On Delay Time  
Rise Time  
td(on)  
tr  
td(off)  
tf  
20  
20  
40  
20  
40  
ns  
ns  
ns  
ns  
ns  
12  
VDD = 10 V, RL = 10  
Turn-Off Delay Time  
Fall Time  
25  
ID = 1 A, VGEN = 4.5V, RG = 6  
10  
Source-Drain Reverse Recovery Time  
trr  
20  
IF = 1.1 A, di/dt = 100 A/  
s
* Pulse test; pulse width  
300 s, duty cycle  
2%.  
http://www.twtysemi.com  
sales@twtysemi.com  
2 of 2  
4008-318-123  

相关型号:

KI5406DC

N-Channel 2.5-V (G-S) MOSFET
KEXIN

KI5406DC

TrenchFET Power MOSFETS: 2.5-V Rated Low Thermal Resistance
TYSEMI

KI5433DC

P-Channel 20-V (D-S) MOSFET
KEXIN

KI5441DC

P-Channel 2.5-V (G-S) MOSFET
KEXIN

KI5447DC

P-Channel 20-V (D-S) MOSFET
KEXIN

KI5473DC

P-Channel 12-V (D-S) MOSFET
KEXIN

KI5504DC

Complementary 30-V (D-S) MOSFET
KEXIN

KI5504DC

Drain-Source Voltage Vds 30 Gate-Source Voltage Vgs -20V
TYSEMI

KI5513DC

Complementary 20-V (D-S) MOSFET
KEXIN

KI5513DC

Drain-Source Voltage Vds 20 V Gate-Source Voltage Vgs -12V
TYSEMI

KI5515DC

Complementary 20-V (D-S) MOSFET
KEXIN

KI5515DC

TrenchFET Power MOSFETS Ultra Low rDS(on) and Excellent Power Handling In Compact Footprint
TYSEMI