SSM3K333R [UTC]
6A, 30V N-CHANNEL POWER MOSFET; 6A , 30V N沟道功率MOSFET型号: | SSM3K333R |
厂家: | Unisonic Technologies |
描述: | 6A, 30V N-CHANNEL POWER MOSFET |
文件: | 总3页 (文件大小:162K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
SSM3K333R
Preliminary
Power MOSFET
6A, 30V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC SSM3K333R is an N-channel power MOSFET using
UTC’s advanced technology to provide customers with a minimum
on-state resistance and superior switching performance.
The UTC SSM3K333R is usually used in power management
switching applications.
FEATURES
* RDS(ON)<42mΩ @ VGS=4.5V
DS(ON)<28mΩ @ VGS=10V
R
* High switching speed
* Low gate charge (Typ.=3.4nC)
* Low CRSS (Typ.=28pF)
SYMBOL
3. Drain
2.Gate
1.Source
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
SOT-23
Packing
Lead Free
Halogen Free
SSM3K333RG-AE3-R
S: Source
1
2
3
S
G
D
SSM3K333RL-AE3-R
Tape Reel
Note: Pin Assignment: G: Gate D: Drain
MARKING
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Copyright © 2012 Unisonic Technologies Co., Ltd
QW-R502-736.a
SSM3K333R
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
V
Drain-Source Voltage
Gate-Source Voltage
VDSS
VGSS
30
±20
V
Continuous
Pulsed
ID (Note 2)
IDM (Note 2)
6
A
Drain Current
12
A
1
2
W
W
°C
°C
Power Dissipation
PD (Note 3)
t=10s
Channel Temperature
Storage Temperature
TCH
150
TSTG
-55~+150
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. The channel temperature should not exceed 150°C during use.
3. Mounted on a FR4 board.(25.4mm×25.4mm×1.6mm, Cu Pad: 645mm2)
ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
BVDSS
IDSS
ID=10mA, VGS=0V
VDS=30V, VGS=0V
GS=+20V, VDS=0V
30
V
1
µA
Forward
Reverse
V
+100 nA
-100 nA
Gate-Source Leakage Current
IGSS
VGS=-20V, VDS=0V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
RDS(ON)
VDS= VGS, ID=0.1mA
1.3
2.5
V
VGS=4.5V, ID=3A (Note 2)
25.7 42 mꢀ
18.7 28 mꢀ
Static Drain-Source On-State Resistance
VGS=10V, ID=5A (Note 2)
DYNAMIC PARAMETERS
Input Capacitance
CISS
COSS
CRSS
436
77
pF
pF
pF
Output Capacitance
V
GS=0V, VDS=15V, f=1.0MHz
Reverse Transfer Capacitance
SWITCHING PARAMETERS
Total Gate Charge
28
QG
QGS
3.4
1.8
1.0
12
9
nC
nC
nC
ns
Gate to Source Charge
Gate to Drain Charge
Turn-ON Delay Time
VGS=4.5V, VDD=15V, ID=6A
QGD
tD(ON)
tD(OFF)
VDD=15V, ID=3A, VGS=0~4.5V,
RG=10ꢀ
Turn-OFF Delay Time
ns
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage VSD ISD=6A, VGS=0V
0.85 1.2
V
Notes: 1. The channel temperature should not exceed 150°C during use.
2. Pulse test
UNISONIC TECHNOLOGIES CO., LTD
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SSM3K333R
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
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QW-R502-736.a
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