-SP10F3A100S7-LU49F08T [VINCOTECH]
Low collector emitter saturation voltage;High speed and smooth switching;
| 型号： | -SP10F3A100S7-LU49F08T |
| 厂家： | 
VINCOTECH |
| 描述： | Low collector emitter saturation voltage;High speed and smooth switching |
| 文件： | 总47页 (文件大小：11892K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
B0-SP10F3A100S7-LU49F08T
datasheet
3xflowBuck-Boost S3
950 V / 200 A
Topology features
flow S3 12 mm housing
● Kelvin Emitter for improved switching performance
● Temperature sensor
● 3ph Flying Cap inverter
● Triple Flying Cap Buck/Boost
Component features
● Low collector emitter saturation voltage
● High speed and smooth switching
Housing features
● Base isolation: Al2O3
● CTI600 housing material
● Compact, baseplate-less housing
● VINcoPress Technology
Schematic
● Thermo-mechanical push-and-pull force relief
● Press-fit pin
● Reliable cold welding connection
Target applications
● Energy Storage Systems
● Power Supply
Types
● B0-SP10F3A100S7-LU49F08T
Copyright Vincotech
1
13 Dec. 2022 / Revision 4
B0-SP10F3A100S7-LU49F08T
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
AC 1 Switch L
VCES
Collector-emitter voltage
950
77
V
A
IC
Collector current (DC current)
Repetitive peak collector current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
ICRM
tp limited by Tjmax
Tj = Tjmax
200
145
±20
175
A
Ptot
W
V
VGES
Gate-emitter voltage
Tjmax
Maximum junction temperature
°C
AC 1 Diode L
VRRM
Peak repetitive reverse voltage
950
58
V
A
IF
Forward current (DC current)
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
IFRM
tp limited by Tjmax
Tj = Tjmax
200
106
175
A
Ptot
W
°C
Tjmax
Maximum junction temperature
AC 1 Switch H
VCES
Collector-emitter voltage
950
77
V
A
IC
Collector current (DC current)
Repetitive peak collector current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
ICRM
tp limited by Tjmax
Tj = Tjmax
200
145
±20
175
A
Ptot
W
V
VGES
Gate-emitter voltage
Tjmax
Maximum junction temperature
°C
Copyright Vincotech
2
13 Dec. 2022 / Revision 4
B0-SP10F3A100S7-LU49F08T
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
AC 1 Diode H
VRRM
Peak repetitive reverse voltage
950
58
V
A
IF
Forward current (DC current)
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
IFRM
tp limited by Tjmax
Tj = Tjmax
200
106
175
A
Ptot
W
°C
Tjmax
Maximum junction temperature
AC 2 Switch L
VCES
Collector-emitter voltage
950
77
V
A
IC
Collector current (DC current)
Repetitive peak collector current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
ICRM
tp limited by Tjmax
Tj = Tjmax
200
145
±20
175
A
Ptot
W
V
VGES
Gate-emitter voltage
Tjmax
Maximum junction temperature
°C
AC 2 Diode L
VRRM
Peak repetitive reverse voltage
950
58
V
A
IF
Forward current (DC current)
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
IFRM
tp limited by Tjmax
Tj = Tjmax
200
106
175
A
Ptot
W
°C
Tjmax
Maximum junction temperature
Copyright Vincotech
3
13 Dec. 2022 / Revision 4
B0-SP10F3A100S7-LU49F08T
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
AC 2 Switch H
VCES
Collector-emitter voltage
950
77
V
A
IC
Collector current (DC current)
Repetitive peak collector current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
ICRM
tp limited by Tjmax
Tj = Tjmax
200
145
±20
175
A
Ptot
W
V
VGES
Gate-emitter voltage
Tjmax
Maximum junction temperature
°C
AC 2 Diode H
VRRM
Peak repetitive reverse voltage
950
58
V
A
IF
Forward current (DC current)
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
IFRM
tp limited by Tjmax
Tj = Tjmax
200
106
175
A
Ptot
W
°C
Tjmax
Maximum junction temperature
Module Properties
Thermal Properties
Tstg
Tjop
Storage temperature
-40…+125
°C
°C
Operation temperature under switching
condition
-40…+(Tjmax - 25)
Isolation Properties
Isolation voltage
Creepage distance
Clearance
Visol
DC Test Voltage*
tp = 2 s
6000
9,32
V
mm
mm
8,03
Comparative Tracking Index
*100 % tested in production
CTI
≥ 600
Copyright Vincotech
4
13 Dec. 2022 / Revision 4
B0-SP10F3A100S7-LU49F08T
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
AC 1 Switch L
Static
VGE(th)
Gate-emitter threshold voltage
VCE = VGE
0,00167 25
25
4,35
5,1
5,85
V
V
1,67
1,94
2,01
2,35(1)
VCEsat
Collector-emitter saturation voltage
15
100
125
150
ICES
IGES
rg
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
0
950
0
25
2
µA
nA
Ω
20
25
100
1,5
6500
139
20
Cies
Coes
Cres
Qg
pF
pF
pF
nC
Output capacitance
Reverse transfer capacitance
Gate charge
f = 100 kHz
0
25
25
25
±15
0
230
Thermal
λpaste = 5,2 W/mK
(PTM)
Thermal resistance junction to sink(2)
Dynamic
0,66
K/W
Rth(j-s)
25
93,12
95,36
15,36
16,96
97,92
121,92
27,42
52,24
2,41
td(on)
Turn-on delay time
Rise time
ns
ns
125
25
tr
125
25
Rgon = 4 Ω
Rgoff = 4 Ω
td(off)
Turn-off delay time
Fall time
ns
125
25
±15
600
100
tf
ns
125
25
QrFWD=3,3 µC
QrFWD=7 µC
Eon
Eoff
Turn-on energy (per pulse)
Turn-off energy (per pulse)
mWs
mWs
125
25
3,13
2,55
125
4,12
Copyright Vincotech
5
13 Dec. 2022 / Revision 4
B0-SP10F3A100S7-LU49F08T
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
AC 1 Diode L
Static
25
2,1
2,64
2,44
2,36
2,8(1)
VF
IR
Forward voltage
100
125
150
V
Reverse leakage current
Thermal
Vr = 950 V
25
4
µA
λpaste = 5,2 W/mK
(PTM)
Thermal resistance junction to sink(2)
Dynamic
0,89
K/W
Rth(j-s)
25
94,87
141,87
97,59
131,97
3,3
IRM
Peak recovery current
Reverse recovery time
Recovered charge
A
125
25
trr
ns
125
25
di/dt=5764 A/µs
di/dt=5806 A/µs
Qr
±15
600
100
μC
125
25
7
1,33
Erec
Reverse recovered energy
Peak rate of fall of recovery current
mWs
A/µs
125
25
3,02
5053
4935
(dirf/dt)max
125
Copyright Vincotech
6
13 Dec. 2022 / Revision 4
B0-SP10F3A100S7-LU49F08T
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
AC 1 Switch H
Static
VGE(th)
Gate-emitter threshold voltage
VCE = VGE
0,00167 25
25
4,35
5,1
5,85
V
V
1,67
1,94
2,01
2,35(1)
VCEsat
Collector-emitter saturation voltage
15
100
125
150
ICES
IGES
rg
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
0
950
0
25
2
µA
nA
Ω
20
25
100
1,5
6500
139
20
Cies
Coes
Cres
Qg
pF
pF
pF
nC
Output capacitance
Reverse transfer capacitance
Gate charge
f = 100 kHz
0
25
25
25
±15
0
230
Thermal
λpaste = 5,2 W/mK
(PTM)
Thermal resistance junction to sink(2)
Dynamic
0,66
K/W
Rth(j-s)
25
93,12
95,36
15,36
16,96
97,92
121,92
27,42
52,24
2,41
td(on)
Turn-on delay time
Rise time
ns
ns
125
25
tr
125
25
Rgon = 4 Ω
Rgoff = 4 Ω
td(off)
Turn-off delay time
Fall time
ns
125
25
±15
600
100
tf
ns
125
25
QrFWD=3,3 µC
QrFWD=7 µC
Eon
Eoff
Turn-on energy (per pulse)
Turn-off energy (per pulse)
mWs
mWs
125
25
3,13
2,55
125
4,12
Copyright Vincotech
7
13 Dec. 2022 / Revision 4
B0-SP10F3A100S7-LU49F08T
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
AC 1 Diode H
Static
25
2,1
2,64
2,44
2,36
2,8(1)
VF
IR
Forward voltage
100
125
150
V
Reverse leakage current
Thermal
Vr = 950 V
25
4
µA
λpaste = 5,2 W/mK
(PTM)
Thermal resistance junction to sink(2)
Dynamic
0,89
K/W
Rth(j-s)
25
94,87
141,87
97,59
131,97
3,3
IRM
Peak recovery current
Reverse recovery time
Recovered charge
A
125
25
trr
ns
125
25
di/dt=5764 A/µs
di/dt=5806 A/µs
Qr
±15
600
100
μC
125
25
7
1,33
Erec
Reverse recovered energy
Peak rate of fall of recovery current
mWs
A/µs
125
25
3,02
5053
4935
(dirf/dt)max
125
Copyright Vincotech
8
13 Dec. 2022 / Revision 4
B0-SP10F3A100S7-LU49F08T
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
AC 2 Switch L
Static
VGE(th)
Gate-emitter threshold voltage
VCE = VGE
0,00167 25
25
4,35
5,1
5,85
V
V
1,67
1,94
2,01
2,35(1)
VCEsat
Collector-emitter saturation voltage
15
100
125
150
ICES
IGES
rg
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
0
950
0
25
2
µA
nA
Ω
20
25
100
1,5
6500
139
20
Cies
Coes
Cres
Qg
pF
pF
pF
nC
Output capacitance
Reverse transfer capacitance
Gate charge
f = 100 kHz
0
25
25
25
±15
0
230
Thermal
λpaste = 5,2 W/mK
(PTM)
Thermal resistance junction to sink(2)
Dynamic
0,66
K/W
Rth(j-s)
25
93,76
95,36
14,08
15,04
97,6
td(on)
Turn-on delay time
Rise time
ns
ns
125
25
tr
125
25
Rgon = 4 Ω
Rgoff = 4 Ω
td(off)
Turn-off delay time
Fall time
ns
125
25
120,96
26,9
±15
600
100
tf
ns
125
25
51,45
2,32
QrFWD=3,27 µC
QrFWD=7,04 µC
Eon
Eoff
Turn-on energy (per pulse)
Turn-off energy (per pulse)
mWs
mWs
125
25
2,92
2,63
125
4,12
Copyright Vincotech
9
13 Dec. 2022 / Revision 4
B0-SP10F3A100S7-LU49F08T
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
AC 2 Diode L
Static
25
2,1
2,64
2,44
2,36
2,8(1)
VF
IR
Forward voltage
100
125
150
V
Reverse leakage current
Thermal
Vr = 950 V
25
4
µA
λpaste = 5,2 W/mK
(PTM)
Thermal resistance junction to sink(2)
Dynamic
0,89
K/W
Rth(j-s)
25
101,3
150,65
88,39
125,56
3,27
IRM
Peak recovery current
Reverse recovery time
Recovered charge
A
125
25
trr
ns
125
25
di/dt=6069 A/µs
di/dt=6151 A/µs
Qr
±15
600
100
μC
125
25
7,04
1,33
Erec
Reverse recovered energy
Peak rate of fall of recovery current
mWs
A/µs
125
25
3,1
5700
5434
(dirf/dt)max
125
Copyright Vincotech
10
13 Dec. 2022 / Revision 4
B0-SP10F3A100S7-LU49F08T
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
AC 2 Switch H
Static
VGE(th)
Gate-emitter threshold voltage
VCE = VGE
0,00167 25
25
4,35
5,1
5,85
V
V
1,67
1,94
2,01
2,35(1)
VCEsat
Collector-emitter saturation voltage
15
100
125
150
ICES
IGES
rg
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
0
950
0
25
2
µA
nA
Ω
20
25
100
1,5
6500
139
20
Cies
Coes
Cres
Qg
pF
pF
pF
nC
Output capacitance
Reverse transfer capacitance
Gate charge
f = 100 kHz
0
25
25
25
±15
0
230
Thermal
λpaste = 5,2 W/mK
(PTM)
Thermal resistance junction to sink(2)
Dynamic
0,66
K/W
Rth(j-s)
25
93,76
95,36
14,08
15,04
97,6
td(on)
Turn-on delay time
Rise time
ns
ns
125
25
tr
125
25
Rgon = 4 Ω
Rgoff = 4 Ω
td(off)
Turn-off delay time
Fall time
ns
125
25
120,96
26,9
±15
600
100
tf
ns
125
25
51,45
2,32
QrFWD=3,27 µC
QrFWD=7,04 µC
Eon
Eoff
Turn-on energy (per pulse)
Turn-off energy (per pulse)
mWs
mWs
125
25
2,92
2,63
125
4,12
Copyright Vincotech
11
13 Dec. 2022 / Revision 4
B0-SP10F3A100S7-LU49F08T
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
AC 2 Diode H
Static
25
2,1
2,64
2,44
2,36
2,8(1)
VF
IR
Forward voltage
100
125
150
V
Reverse leakage current
Thermal
Vr = 950 V
25
4
µA
λpaste = 5,2 W/mK
(PTM)
Thermal resistance junction to sink(2)
Dynamic
0,89
K/W
Rth(j-s)
25
101,3
150,65
88,39
125,56
3,27
IRM
Peak recovery current
Reverse recovery time
Recovered charge
A
125
25
trr
ns
125
25
di/dt=6069 A/µs
di/dt=6151 A/µs
Qr
±15
600
100
μC
125
25
7,04
1,33
Erec
Reverse recovered energy
Peak rate of fall of recovery current
mWs
A/µs
125
25
3,1
5700
5434
(dirf/dt)max
125
Copyright Vincotech
12
13 Dec. 2022 / Revision 4
B0-SP10F3A100S7-LU49F08T
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
VGE [V]
VGS [V]
Min
Max
Thermistor
Static
R
ΔR/R
P
Rated resistance
Deviation of R100
Power dissipation
Power dissipation constant
B-value
25
22
kΩ
%
R100 = 1484 Ω
100
25
-5
5
130
1,5
mW
mW/K
K
d
25
B(25/50)
Tol. ±1 %
Tol. ±1 %
3962
4000
B(25/100)
B-value
K
Vincotech Thermistor Reference
I
(1)
Value at chip level
(2)
Only valid with pre-applied Vincotech thermal interface material.
Copyright Vincotech
13
13 Dec. 2022 / Revision 4
B0-SP10F3A100S7-LU49F08T
datasheet
AC 1 Switch L Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical output characteristics
Typical output characteristics
IC = f(VCE
)
IC = f(VCE)
300
300
VGE
:
7 V
8 V
250
200
150
100
50
250
200
150
100
50
9 V
10 V
11 V
12 V
13 V
14 V
15 V
16 V
17 V
0
0,0
0
0,0
0,5
1,0
1,5
2,0
2,5
3,0
3,5
4,0
0,5
1,0
1,5
2,0
2,5
3,0
3,5
4,0
V
CE(V)
VCE(V)
tp
=
tp
=
250
15
μs
V
250
150
μs
°C
25 °C
VGE
=
Tj =
125 °C
150 °C
Tj:
VGE from 7 V to 17 V in steps of 1 V
figure 3.
IGBT
figure 4.
IGBT
Typical transfer characteristics
Transient thermal impedance as a function of pulse width
IC = f(VGE
)
Zth(j-s) = f(tp)
0
100
10
75
50
25
0
-1
10
-2
10
0,5
0,2
0,1
0,05
0,02
0,01
0,005
0
-3
10
-5
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
0
2
4
6
8
10
10
10
tp(s)
V
GE(V)
tp
=
=
250
10
μs
V
D =
tp / T
0,656
25 °C
VCE
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
IGBT thermal model values
R (K/W)
τ (s)
8,75E-02
3,39E-01
1,74E-01
2,53E-02
3,08E-02
1,42E+00
1,02E-01
2,16E-02
1,80E-03
2,55E-04
Copyright Vincotech
14
13 Dec. 2022 / Revision 4
B0-SP10F3A100S7-LU49F08T
datasheet
AC 1 Switch L Characteristics
figure 5.
IGBT
Safe operating area
IC = f(VCE
)
1000
100
10
1
0,1
0,01
1
10
100
1000
10000
V
CE(V)
D =
single pulse
Ts =
80
15
°C
V
VGE
=
Tj =
Tjmax
Copyright Vincotech
15
13 Dec. 2022 / Revision 4
B0-SP10F3A100S7-LU49F08T
datasheet
AC 1 Diode L Characteristics
figure 6.
FWD
figure 7.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
0
300
250
200
150
100
50
10
-1
10
-2
10
0,5
0,2
0,1
0,05
0,02
0,01
0,005
0
-3
0
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0
1
2
3
4
5
10
10
10
10
tp(s)
VF(V)
tp
=
250
μs
D =
tp / T
0,895
25 °C
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
FWD thermal model values
R (K/W)
τ (s)
5,60E-02
1,11E-01
5,01E-01
1,52E-01
7,48E-02
2,84E+00
4,12E-01
5,45E-02
1,00E-02
8,47E-04
Copyright Vincotech
16
13 Dec. 2022 / Revision 4
B0-SP10F3A100S7-LU49F08T
datasheet
AC 1 Switch H Characteristics
figure 8.
IGBT
figure 9.
IGBT
Typical output characteristics
Typical output characteristics
IC = f(VCE
)
IC = f(VCE)
300
300
VGE
:
7 V
8 V
250
200
150
100
50
250
200
150
100
50
9 V
10 V
11 V
12 V
13 V
14 V
15 V
16 V
17 V
0
0,0
0
0,0
0,5
1,0
1,5
2,0
2,5
3,0
3,5
4,0
0,5
1,0
1,5
2,0
2,5
3,0
3,5
4,0
V
CE(V)
VCE(V)
tp
=
tp
=
250
15
μs
V
250
150
μs
°C
25 °C
VGE
=
Tj =
125 °C
150 °C
Tj:
VGE from 7 V to 17 V in steps of 1 V
figure 10.
IGBT
figure 11.
IGBT
Typical transfer characteristics
Transient thermal impedance as a function of pulse width
IC = f(VGE
)
Zth(j-s) = f(tp)
0
100
10
75
50
25
0
-1
10
-2
10
0,5
0,2
0,1
0,05
0,02
0,01
0,005
0
-3
10
-5
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
0
2
4
6
8
10
10
10
tp(s)
V
GE(V)
tp
=
=
250
10
μs
V
D =
tp / T
0,656
25 °C
VCE
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
IGBT thermal model values
R (K/W)
τ (s)
8,75E-02
3,39E-01
1,74E-01
2,53E-02
3,08E-02
1,42E+00
1,02E-01
2,16E-02
1,80E-03
2,55E-04
Copyright Vincotech
17
13 Dec. 2022 / Revision 4
B0-SP10F3A100S7-LU49F08T
datasheet
AC 1 Switch H Characteristics
figure 12.
IGBT
Safe operating area
IC = f(VCE
)
1000
100
10
1
0,1
0,01
1
10
100
1000
10000
V
CE(V)
D =
single pulse
Ts =
80
15
°C
V
VGE
=
Tj =
Tjmax
Copyright Vincotech
18
13 Dec. 2022 / Revision 4
B0-SP10F3A100S7-LU49F08T
datasheet
AC 1 Diode H Characteristics
figure 13.
FWD
figure 14.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
0
300
250
200
150
100
50
10
-1
10
-2
10
0,5
0,2
0,1
0,05
0,02
0,01
0,005
0
-3
0
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0
1
2
3
4
5
10
10
10
10
tp(s)
VF(V)
tp
=
250
μs
D =
tp / T
0,895
25 °C
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
FWD thermal model values
R (K/W)
τ (s)
5,60E-02
1,11E-01
5,01E-01
1,52E-01
7,48E-02
2,84E+00
4,12E-01
5,45E-02
1,00E-02
8,47E-04
Copyright Vincotech
19
13 Dec. 2022 / Revision 4
B0-SP10F3A100S7-LU49F08T
datasheet
AC 2 Switch L Characteristics
figure 15.
IGBT
figure 16.
IGBT
Typical output characteristics
Typical output characteristics
IC = f(VCE
)
IC = f(VCE)
300
300
VGE
:
7 V
8 V
250
200
150
100
50
250
200
150
100
50
9 V
10 V
11 V
12 V
13 V
14 V
15 V
16 V
17 V
0
0,0
0
0,0
0,5
1,0
1,5
2,0
2,5
3,0
3,5
4,0
0,5
1,0
1,5
2,0
2,5
3,0
3,5
4,0
V
CE(V)
VCE(V)
tp
=
tp
=
250
15
μs
V
250
150
μs
°C
25 °C
VGE
=
Tj =
125 °C
150 °C
Tj:
VGE from 7 V to 17 V in steps of 1 V
figure 17.
IGBT
figure 18.
IGBT
Typical transfer characteristics
Transient thermal impedance as a function of pulse width
IC = f(VGE
)
Zth(j-s) = f(tp)
0
100
10
75
50
25
0
-1
10
-2
10
0,5
0,2
0,1
0,05
0,02
0,01
0,005
0
-3
10
-5
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
0
2
4
6
8
10
10
10
tp(s)
V
GE(V)
tp
=
=
250
10
μs
V
D =
tp / T
0,656
25 °C
VCE
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
IGBT thermal model values
R (K/W)
τ (s)
8,75E-02
3,39E-01
1,74E-01
2,53E-02
3,08E-02
1,42E+00
1,02E-01
2,16E-02
1,80E-03
2,55E-04
Copyright Vincotech
20
13 Dec. 2022 / Revision 4
B0-SP10F3A100S7-LU49F08T
datasheet
AC 2 Switch L Characteristics
figure 19.
IGBT
Safe operating area
IC = f(VCE
)
1000
100
10
1
0,1
0,01
1
10
100
1000
10000
V
CE(V)
D =
single pulse
Ts =
80
15
°C
V
VGE
=
Tj =
Tjmax
Copyright Vincotech
21
13 Dec. 2022 / Revision 4
B0-SP10F3A100S7-LU49F08T
datasheet
AC 2 Diode L Characteristics
figure 20.
FWD
figure 21.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
0
300
250
200
150
100
50
10
-1
10
-2
10
0,5
0,2
0,1
0,05
0,02
0,01
0,005
0
-3
0
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0
1
2
3
4
5
10
10
10
10
tp(s)
VF(V)
tp
=
250
μs
D =
tp / T
0,895
25 °C
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
FWD thermal model values
R (K/W)
τ (s)
5,60E-02
1,11E-01
5,01E-01
1,52E-01
7,48E-02
2,84E+00
4,12E-01
5,45E-02
1,00E-02
8,47E-04
Copyright Vincotech
22
13 Dec. 2022 / Revision 4
B0-SP10F3A100S7-LU49F08T
datasheet
AC 2 Switch H Characteristics
figure 22.
IGBT
figure 23.
IGBT
Typical output characteristics
Typical output characteristics
IC = f(VCE
)
IC = f(VCE)
300
300
VGE
:
7 V
8 V
250
200
150
100
50
250
200
150
100
50
9 V
10 V
11 V
12 V
13 V
14 V
15 V
16 V
17 V
0
0,0
0
0,0
0,5
1,0
1,5
2,0
2,5
3,0
3,5
4,0
0,5
1,0
1,5
2,0
2,5
3,0
3,5
4,0
V
CE(V)
VCE(V)
tp
=
tp
=
250
15
μs
V
250
150
μs
°C
25 °C
VGE
=
Tj =
125 °C
150 °C
Tj:
VGE from 7 V to 17 V in steps of 1 V
figure 24.
IGBT
figure 25.
IGBT
Typical transfer characteristics
Transient thermal impedance as a function of pulse width
IC = f(VGE
)
Zth(j-s) = f(tp)
0
100
10
75
50
25
0
-1
10
-2
10
0,5
0,2
0,1
0,05
0,02
0,01
0,005
0
-3
10
-5
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
0
2
4
6
8
10
10
10
tp(s)
V
GE(V)
tp
=
=
250
10
μs
V
D =
tp / T
0,656
25 °C
VCE
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
IGBT thermal model values
R (K/W)
τ (s)
8,75E-02
3,39E-01
1,74E-01
2,53E-02
3,08E-02
1,42E+00
1,02E-01
2,16E-02
1,80E-03
2,55E-04
Copyright Vincotech
23
13 Dec. 2022 / Revision 4
B0-SP10F3A100S7-LU49F08T
datasheet
AC 2 Switch H Characteristics
figure 26.
IGBT
Safe operating area
IC = f(VCE
)
1000
100
10
1
0,1
0,01
1
10
100
1000
10000
V
CE(V)
D =
single pulse
Ts =
80
15
°C
V
VGE
=
Tj =
Tjmax
Copyright Vincotech
24
13 Dec. 2022 / Revision 4
B0-SP10F3A100S7-LU49F08T
datasheet
AC 2 Diode H Characteristics
figure 27.
FWD
figure 28.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
0
300
250
200
150
100
50
10
-1
10
-2
10
0,5
0,2
0,1
0,05
0,02
0,01
0,005
0
-3
0
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0
1
2
3
4
5
10
10
10
10
tp(s)
VF(V)
tp
=
250
μs
D =
tp / T
0,895
25 °C
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
FWD thermal model values
R (K/W)
τ (s)
5,60E-02
1,11E-01
5,01E-01
1,52E-01
7,48E-02
2,84E+00
4,12E-01
5,45E-02
1,00E-02
8,47E-04
Copyright Vincotech
25
13 Dec. 2022 / Revision 4
B0-SP10F3A100S7-LU49F08T
datasheet
Thermistor Characteristics
figure 29.
Thermistor
Typical NTC characteristic as function of temperature
RT = f(T)
25000
20000
15000
10000
5000
0
20
40
60
80
100
120
140
T(°C)
Copyright Vincotech
26
13 Dec. 2022 / Revision 4
B0-SP10F3A100S7-LU49F08T
datasheet
AC 1 Switching Characteristics L
figure 30.
IGBT
figure 31.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of IGBT turn on gate resistor
E = f(IC)
E = f(Rg)
8
7
6
5
4
3
2
1
0
8
7
6
5
4
3
2
1
0
Eoff
Eon
Eon
Eon
Eoff
Eoff
Eon
Eoff
0
25
50
75
100
125
150
175
200
IC(A)
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
Tj:
Tj:
VCE
VGE
=
=
=
=
VCE
VGE
IC
=
=
=
600
±15
4
V
V
Ω
Ω
125 °C
600
±15
100
V
125 °C
V
A
Rgon
Rgoff
4
figure 32.
FWD
figure 33.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of IGBT turn on gate resistor
Erec = f(IC)
Erec = f(Rg)
5
4
3
2
1
0
4,5
4,0
3,5
3,0
2,5
2,0
1,5
1,0
0,5
0,0
Erec
Erec
Erec
Erec
0
25
50
75
100
125
150
175
200
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
IC(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
Tj:
Tj:
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
4
V
V
Ω
125 °C
600
±15
100
V
125 °C
V
A
Copyright Vincotech
27
13 Dec. 2022 / Revision 4
B0-SP10F3A100S7-LU49F08T
datasheet
AC 1 Switching Characteristics L
figure 34.
IGBT
figure 35.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of IGBT turn on gate resistor
t = f(IC)
t = f(Rg)
0
10
0
10
td(on)
td(off)
td(off)
td(on)
-1
10
tf
-1
10
tr
tf
-2
10
tr
-3
10
-2
10
0
25
50
75
100
125
150
175
200
IC(A)
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
Rg(Ω)
With an inductive load at
With an inductive load at
Tj =
Tj =
125
600
±15
4
°C
V
125
600
±15
100
°C
VCE
=
=
=
=
VCE
=
=
=
V
V
A
VGE
Rgon
Rgoff
VGE
IC
V
Ω
Ω
4
figure 36.
FWD
figure 37.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn on gate resistor
trr = f(IC)
trr = f(Rgon)
0,200
0,175
0,150
0,125
0,100
0,075
0,050
0,025
0,000
0,30
0,25
0,20
0,15
0,10
0,05
0,00
trr
trr
trr
trr
0
25
50
75
100
125
150
175
200
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
Tj:
Tj:
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
4
V
V
Ω
125 °C
600
±15
100
V
125 °C
V
A
Copyright Vincotech
28
13 Dec. 2022 / Revision 4
B0-SP10F3A100S7-LU49F08T
datasheet
AC 1 Switching Characteristics L
figure 38.
FWD
figure 39.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of IGBT turn on gate resistor
Qr = f(IC)
Qr = f(Rgon)
12
10
8
9
8
7
6
5
4
3
2
1
0
Qr
Qr
6
Qr
Qr
4
2
0
0
25
50
75
100
125
150
175
200
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
Tj:
Tj:
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
4
V
V
Ω
125 °C
600
±15
100
V
125 °C
V
A
figure 40.
FWD
figure 41.
FWD
Typical peak reverse recovery current as a function of collector current
Typical peak reverse recovery current as a function of IGBT turn on gate resistor
IRM = f(IC)
IRM = f(Rgon)
200
175
150
125
100
75
225
200
175
150
125
100
75
IRM
IRM
IRM
50
IRM
50
25
25
0
0
0,0
0
25
50
75
100
125
150
175
200
2,5
5,0
7,5
10,0
12,5
15,0
17,5
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
Tj:
Tj:
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
4
V
V
Ω
125 °C
600
±15
100
V
125 °C
V
A
Copyright Vincotech
29
13 Dec. 2022 / Revision 4
B0-SP10F3A100S7-LU49F08T
datasheet
AC 1 Switching Characteristics L
figure 42.
FWD
figure 43.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of turn on gate resistor
diF/dt, dirr/dt = f(IC)
diF/dt, dirr/dt = f(Rgon)
8000
8000
7000
6000
5000
4000
3000
2000
1000
0
diF/dt ‒ ‒ ‒ ‒ ‒
diF/dt ‒ ‒ ‒ ‒ ‒
dirr/dt ──────
7000
6000
5000
4000
3000
2000
1000
0
dirr/dt ──────
0
25
50
75
100
125
150
175
200
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
Tj:
Tj:
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
4
V
V
Ω
125 °C
600
±15
100
V
V
A
125 °C
figure 44.
IGBT
Reverse bias safe operating area
IC = f(VCE
)
225
IC MAX
200
175
150
125
100
75
50
25
0
0
200
400
600
800
1000
1200
V
CE(V)
Tj =
At
125
°C
Ω
Rgon
Rgoff
=
=
4
4
Ω
Copyright Vincotech
30
13 Dec. 2022 / Revision 4
B0-SP10F3A100S7-LU49F08T
datasheet
AC 1 Switching Characteristics H
figure 45.
IGBT
figure 46.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of IGBT turn on gate resistor
E = f(IC)
E = f(Rg)
8
7
6
5
4
3
2
1
0
8
7
6
5
4
3
2
1
0
Eoff
Eon
Eon
Eon
Eoff
Eoff
Eon
Eoff
0
25
50
75
100
125
150
175
200
IC(A)
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
Tj:
Tj:
VCE
VGE
=
=
=
=
VCE
VGE
IC
=
=
=
600
±15
4
V
V
Ω
Ω
125 °C
600
±15
100
V
125 °C
V
A
Rgon
Rgoff
4
figure 47.
FWD
figure 48.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of IGBT turn on gate resistor
Erec = f(IC)
Erec = f(Rg)
5
4
3
2
1
0
4,5
4,0
3,5
3,0
2,5
2,0
1,5
1,0
0,5
0,0
Erec
Erec
Erec
Erec
0
25
50
75
100
125
150
175
200
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
IC(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
Tj:
Tj:
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
4
V
V
Ω
125 °C
600
±15
100
V
125 °C
V
A
Copyright Vincotech
31
13 Dec. 2022 / Revision 4
B0-SP10F3A100S7-LU49F08T
datasheet
AC 1 Switching Characteristics H
figure 49.
IGBT
figure 50.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of IGBT turn on gate resistor
t = f(IC)
t = f(Rg)
0
10
0
10
td(on)
td(off)
td(off)
td(on)
-1
10
tf
-1
10
tr
tf
-2
10
tr
-3
10
-2
10
0
25
50
75
100
125
150
175
200
IC(A)
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
Rg(Ω)
With an inductive load at
With an inductive load at
Tj =
Tj =
125
600
±15
4
°C
V
125
600
±15
100
°C
VCE
=
=
=
=
VCE
=
=
=
V
V
A
VGE
Rgon
Rgoff
VGE
IC
V
Ω
Ω
4
figure 51.
FWD
figure 52.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn on gate resistor
trr = f(IC)
trr = f(Rgon)
0,200
0,175
0,150
0,125
0,100
0,075
0,050
0,025
0,000
0,30
0,25
0,20
0,15
0,10
0,05
0,00
trr
trr
trr
trr
0
25
50
75
100
125
150
175
200
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
Tj:
Tj:
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
4
V
V
Ω
125 °C
600
±15
100
V
125 °C
V
A
Copyright Vincotech
32
13 Dec. 2022 / Revision 4
B0-SP10F3A100S7-LU49F08T
datasheet
AC 1 Switching Characteristics H
figure 53.
FWD
figure 54.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of IGBT turn on gate resistor
Qr = f(IC)
Qr = f(Rgon)
12
10
8
9
8
7
6
5
4
3
2
1
0
Qr
Qr
6
Qr
Qr
4
2
0
0
25
50
75
100
125
150
175
200
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
Tj:
Tj:
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
4
V
V
Ω
125 °C
600
±15
100
V
125 °C
V
A
figure 55.
FWD
figure 56.
FWD
Typical peak reverse recovery current as a function of collector current
Typical peak reverse recovery current as a function of IGBT turn on gate resistor
IRM = f(IC)
IRM = f(Rgon)
200
175
150
125
100
75
225
200
175
150
125
100
75
IRM
IRM
IRM
50
IRM
50
25
25
0
0
0,0
0
25
50
75
100
125
150
175
200
2,5
5,0
7,5
10,0
12,5
15,0
17,5
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
Tj:
Tj:
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
4
V
V
Ω
125 °C
600
±15
100
V
125 °C
V
A
Copyright Vincotech
33
13 Dec. 2022 / Revision 4
B0-SP10F3A100S7-LU49F08T
datasheet
AC 1 Switching Characteristics H
figure 57.
FWD
figure 58.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of turn on gate resistor
diF/dt, dirr/dt = f(IC)
diF/dt, dirr/dt = f(Rgon)
8000
8000
7000
6000
5000
4000
3000
2000
1000
0
diF/dt ‒ ‒ ‒ ‒ ‒
diF/dt ‒ ‒ ‒ ‒ ‒
dirr/dt ──────
7000
6000
5000
4000
3000
2000
1000
0
dirr/dt ──────
0
25
50
75
100
125
150
175
200
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
Tj:
Tj:
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
4
V
V
Ω
125 °C
600
±15
100
V
V
A
125 °C
figure 59.
IGBT
Reverse bias safe operating area
IC = f(VCE
)
225
IC MAX
200
175
150
125
100
75
50
25
0
0
200
400
600
800
1000
1200
V
CE(V)
Tj =
At
125
°C
Ω
Rgon
Rgoff
=
=
4
4
Ω
Copyright Vincotech
34
13 Dec. 2022 / Revision 4
B0-SP10F3A100S7-LU49F08T
datasheet
AC 2 Switching Characteristics L
figure 60.
IGBT
figure 61.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of IGBT turn on gate resistor
E = f(IC)
E = f(Rg)
8
7
6
5
4
3
2
1
0
8
7
6
5
4
3
2
1
0
Eoff
Eon
Eon
Eoff
Eon
Eoff
Eon
Eoff
0
25
50
75
100
125
150
175
200
IC(A)
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
Tj:
Tj:
VCE
VGE
=
=
=
=
VCE
VGE
IC
=
=
=
600
±15
4
V
V
Ω
Ω
125 °C
600
±15
100
V
125 °C
V
A
Rgon
Rgoff
4
figure 62.
FWD
figure 63.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of IGBT turn on gate resistor
Erec = f(IC)
Erec = f(Rg)
5
4
3
2
1
0
5
4
3
2
1
0
Erec
Erec
Erec
Erec
0
25
50
75
100
125
150
175
200
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
IC(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
Tj:
Tj:
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
4
V
V
Ω
125 °C
600
±15
100
V
125 °C
V
A
Copyright Vincotech
35
13 Dec. 2022 / Revision 4
B0-SP10F3A100S7-LU49F08T
datasheet
AC 2 Switching Characteristics L
figure 64.
IGBT
figure 65.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of IGBT turn on gate resistor
t = f(IC)
t = f(Rg)
0
10
0
10
td(on)
td(off)
td(off)
td(on)
-1
10
tf
-1
10
tr
tf
-2
10
tr
-3
10
-2
10
0
25
50
75
100
125
150
175
200
IC(A)
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
Rg(Ω)
With an inductive load at
With an inductive load at
Tj =
Tj =
125
600
±15
4
°C
V
125
600
±15
100
°C
VCE
=
=
=
=
VCE
=
=
=
V
V
A
VGE
Rgon
Rgoff
VGE
IC
V
Ω
Ω
4
figure 66.
FWD
figure 67.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn on gate resistor
trr = f(IC)
trr = f(Rgon)
0,175
0,150
0,125
0,100
0,075
0,050
0,025
0,000
0,225
0,200
0,175
0,150
0,125
0,100
0,075
0,050
0,025
0,000
trr
trr
trr
trr
0
25
50
75
100
125
150
175
200
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
Tj:
Tj:
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
4
V
V
Ω
125 °C
600
±15
100
V
V
A
125 °C
Copyright Vincotech
36
13 Dec. 2022 / Revision 4
B0-SP10F3A100S7-LU49F08T
datasheet
AC 2 Switching Characteristics L
figure 68.
FWD
figure 69.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of IGBT turn on gate resistor
Qr = f(IC)
Qr = f(Rgon)
12
10
8
9
8
7
6
5
4
3
2
1
0
Qr
Qr
6
Qr
Qr
4
2
0
0
25
50
75
100
125
150
175
200
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
Tj:
Tj:
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
4
V
V
Ω
125 °C
600
±15
100
V
125 °C
V
A
figure 70.
FWD
figure 71.
FWD
Typical peak reverse recovery current as a function of collector current
Typical peak reverse recovery current as a function of IGBT turn on gate resistor
IRM = f(IC)
IRM = f(Rgon)
200
175
150
125
100
75
225
200
175
150
125
100
75
IRM
IRM
IRM
IRM
50
50
25
25
0
0
0,0
0
25
50
75
100
125
150
175
200
2,5
5,0
7,5
10,0
12,5
15,0
17,5
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
Tj:
Tj:
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
4
V
V
Ω
125 °C
600
±15
100
V
125 °C
V
A
Copyright Vincotech
37
13 Dec. 2022 / Revision 4
B0-SP10F3A100S7-LU49F08T
datasheet
AC 2 Switching Characteristics L
figure 72.
FWD
figure 73.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of turn on gate resistor
diF/dt, dirr/dt = f(IC)
diF/dt, dirr/dt = f(Rgon)
9000
10000
8000
6000
4000
2000
0
diF/dt ‒ ‒ ‒ ‒ ‒
diF/dt ‒ ‒ ‒ ‒ ‒
dirr/dt ──────
8000
dirr/dt ──────
7000
6000
5000
4000
3000
2000
1000
0
0
25
50
75
100
125
150
175
200
IC(A)
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
R
gon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
Tj:
Tj:
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
4
V
V
Ω
125 °C
600
±15
100
V
V
A
125 °C
figure 74.
IGBT
Reverse bias safe operating area
IC = f(VCE
)
225
IC MAX
200
175
150
125
100
75
50
25
0
0
200
400
600
800
1000
1200
V
CE(V)
Tj =
At
125
°C
Ω
Rgon
Rgoff
=
=
4
4
Ω
Copyright Vincotech
38
13 Dec. 2022 / Revision 4
B0-SP10F3A100S7-LU49F08T
datasheet
AC 2 Switching Characteristics H
figure 75.
IGBT
figure 76.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of IGBT turn on gate resistor
E = f(IC)
E = f(Rg)
8
7
6
5
4
3
2
1
0
8
7
6
5
4
3
2
1
0
Eoff
Eon
Eon
Eoff
Eon
Eoff
Eon
Eoff
0
25
50
75
100
125
150
175
200
IC(A)
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
Tj:
Tj:
VCE
VGE
=
=
=
=
VCE
VGE
IC
=
=
=
600
±15
4
V
V
Ω
Ω
125 °C
600
±15
100
V
125 °C
V
A
Rgon
Rgoff
4
figure 77.
FWD
figure 78.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of IGBT turn on gate resistor
Erec = f(IC)
Erec = f(Rg)
5
4
3
2
1
0
5
4
3
2
1
0
Erec
Erec
Erec
Erec
0
25
50
75
100
125
150
175
200
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
IC(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
Tj:
Tj:
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
4
V
V
Ω
125 °C
600
±15
100
V
125 °C
V
A
Copyright Vincotech
39
13 Dec. 2022 / Revision 4
B0-SP10F3A100S7-LU49F08T
datasheet
AC 2 Switching Characteristics H
figure 79.
IGBT
figure 80.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of IGBT turn on gate resistor
t = f(IC)
t = f(Rg)
0
10
0
10
td(on)
td(off)
td(off)
td(on)
-1
10
tf
-1
10
tr
tf
-2
10
tr
-3
10
-2
10
0
25
50
75
100
125
150
175
200
IC(A)
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
Rg(Ω)
With an inductive load at
With an inductive load at
Tj =
Tj =
125
600
±15
4
°C
V
125
600
±15
100
°C
VCE
=
=
=
=
VCE
=
=
=
V
V
A
VGE
Rgon
Rgoff
VGE
IC
V
Ω
Ω
4
figure 81.
FWD
figure 82.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn on gate resistor
trr = f(IC)
trr = f(Rgon)
0,175
0,150
0,125
0,100
0,075
0,050
0,025
0,000
0,225
0,200
0,175
0,150
0,125
0,100
0,075
0,050
0,025
0,000
trr
trr
trr
trr
0
25
50
75
100
125
150
175
200
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
Tj:
Tj:
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
4
V
V
Ω
125 °C
600
±15
100
V
V
A
125 °C
Copyright Vincotech
40
13 Dec. 2022 / Revision 4
B0-SP10F3A100S7-LU49F08T
datasheet
AC 2 Switching Characteristics H
figure 83.
FWD
figure 84.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of IGBT turn on gate resistor
Qr = f(IC)
Qr = f(Rgon)
12
10
8
9
8
7
6
5
4
3
2
1
0
Qr
Qr
6
Qr
Qr
4
2
0
0
25
50
75
100
125
150
175
200
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
Tj:
Tj:
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
4
V
V
Ω
125 °C
600
±15
100
V
125 °C
V
A
figure 85.
FWD
figure 86.
FWD
Typical peak reverse recovery current as a function of collector current
Typical peak reverse recovery current as a function of IGBT turn on gate resistor
IRM = f(IC)
IRM = f(Rgon)
200
175
150
125
100
75
225
200
175
150
125
100
75
IRM
IRM
IRM
IRM
50
50
25
25
0
0
0,0
0
25
50
75
100
125
150
175
200
2,5
5,0
7,5
10,0
12,5
15,0
17,5
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
Tj:
Tj:
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
4
V
V
Ω
125 °C
600
±15
100
V
125 °C
V
A
Copyright Vincotech
41
13 Dec. 2022 / Revision 4
B0-SP10F3A100S7-LU49F08T
datasheet
AC 2 Switching Characteristics H
figure 87.
FWD
figure 88.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of turn on gate resistor
diF/dt, dirr/dt = f(IC)
diF/dt, dirr/dt = f(Rgon)
9000
10000
8000
6000
4000
2000
0
diF/dt ‒ ‒ ‒ ‒ ‒
diF/dt ‒ ‒ ‒ ‒ ‒
dirr/dt ──────
8000
dirr/dt ──────
7000
6000
5000
4000
3000
2000
1000
0
0
25
50
75
100
125
150
175
200
IC(A)
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
R
gon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
Tj:
Tj:
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
4
V
V
Ω
125 °C
600
±15
100
V
V
A
125 °C
figure 89.
IGBT
Reverse bias safe operating area
IC = f(VCE
)
225
IC MAX
200
175
150
125
100
75
50
25
0
0
200
400
600
800
1000
1200
V
CE(V)
Tj =
At
125
°C
Ω
Rgon
Rgoff
=
=
4
4
Ω
Copyright Vincotech
42
13 Dec. 2022 / Revision 4
B0-SP10F3A100S7-LU49F08T
datasheet
Switching Definitions
figure 90.
IGBT
figure 91.
IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff (ttEoff = integrating time for Eoff
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)
tdoff
IC
IC
VGE
VGE
VCE
tEoff
VCE
tEon
figure 92.
IGBT
figure 93.
IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
IC
IC
VCE
tr
VCE
tf
Copyright Vincotech
43
13 Dec. 2022 / Revision 4
B0-SP10F3A100S7-LU49F08T
datasheet
Switching Definitions
figure 94.
FWD
figure 95.
FWD
Turn-off Switching Waveforms & definition of trr
Turn-on Switching Waveforms & definition of tQr (tQr = integrating time for Qr)
Qr
IF
IF
fitted
VF
Copyright Vincotech
44
13 Dec. 2022 / Revision 4
B0-SP10F3A100S7-LU49F08T
datasheet
Ordering Code
Marking
Version
Ordering Code
Without thermal paste
B0-SP10F3A100S7-LU49F08T
B0-SP10F3A100S7-LU49F08T-/7/
With thermal paste (5,2 W/mK, PTM6000HV)
Name
Date code
UL & VIN
Lot
Serial
Text
NN-NNNNNNNNNNNNNN-
TTTTTTVV
WWYY
UL VIN
LLLLL
SSSS
Type&Ver
Lot number
Serial
Date code
Datamatrix
TTTTTTTVV
LLLLL
SSSS
WWYY
Outline
Pin table [mm]
Pin
1
X
52,4
49,7
43,95
45,35
38
Y
0
Function
DC+1
DC+1
FC-1
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
50
51
52
53
54
55
6,95
6,95
26,95
26,95
26,85
26,85
49,4
52,4
43,85
43,85
52,4
52,4
36,95
35,1
43,65
43,65
33,6
31,2
24,2
21,2
22,4
22,4
11,5
11,5
12,7
9,7
44,75
47,45
44,75
47,45
17,9
Ph3
Ph3
2
0
Ph2
3
7,1
9,6
0
Ph2
4
FC-1
FC+2
FC+2
S13
G13
Ph1
5
DC-12
DC-12
DC-12
G12
20,6
6
35,3
32,6
39,8
36,8
33,75
30,75
26,6
25,2
18,4
15,5
15,5
10,3
8,7
0
50,4
7
0
50,4
8
3
44,75
47,45
31,6
9
3
S12
Ph1
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
3
G22
G11
S11
G14
S14
FC+1
FC+1
G24
S24
G23
S23
S21
G21
G31
S31
S33
G33
3
S22
28,6
7,1
9,6
6,2
0
FC-2
38,01
35
FC-2
DC+2
DC+3
DC+3
FC-3
21,1
18,4
2,7
7,1
9,6
0
42,65
39,65
39,45
37,3
FC-3
8,9
DC-3
DC-3
S32
6,2
0
31,6
6,3
3
28,6
3,3
3
G32
28,6
3
0
Therm1
Therm2
FC+3
FC+3
G34
31,6
0
0
37,3
7,05
7,05
0
18,4
21,1
37,45
40,45
39,45
18,4
8,9
DC+2
0
S34
Copyright Vincotech
45
13 Dec. 2022 / Revision 4
B0-SP10F3A100S7-LU49F08T
datasheet
Pinout
15,16
DC+3
1,2
DC+1
14,55
DC+2
T31
D32
T21
T23
T24
T22
T11
T13
T14
T12
D22
D24
D23
D21
D12
D14
D13
D11
39
40
50
49
51
G31
G21
S21
G11
S11
S31
52
25,26
FC+3
33,34
FC+2
43,44
FC+1
T33
D34
36
35
47
48
54
G33
G23
S23
G13
S13
S33
53
29,30
Ph3
31,32
Ph2
37,38
Ph1
T34
D33
41
42
45
46
27
G34
G24
S24
G14
S14
S34
28
17,18
FC-3
12,13
FC-2
3,4
FC-1
T32
D31
22
G32
S32
8
9
10
11
G22
S22
G12
S12
21
Rt
DC-3
19,20
DC-12
5,6,7
Therm1
23
Therm2
24
Identification
Component
Voltage
Current
Function
Comment
ID
T12, T22, T32
D11, D21, D31
T11, T21, T31
D12, D22, D32
T14, T24, T34
D13, D23, D33
T13, T23, T33
D14, D24, D34
Rt
IGBT
FWD
950 V
950 V
950 V
950 V
950 V
950 V
950 V
950 V
100 A
100 A
100 A
100 A
100 A
100 A
100 A
100 A
AC 1 Switch L
AC 1 Diode L
AC 1 Switch H
AC 1 Diode H
AC 2 Switch L
AC 2 Diode L
AC 2 Switch H
AC 2 Diode H
Thermistor
IGBT
FWD
IGBT
FWD
IGBT
FWD
Thermistor
Copyright Vincotech
46
13 Dec. 2022 / Revision 4
B0-SP10F3A100S7-LU49F08T
datasheet
Packaging instruction
Handling instruction
Standard packaging quantity (SPQ) 45
>SPQ
Standard
<SPQ
Sample
Handling instructions for flow S3 packages see vincotech.com website.
Package data
Package data for flow S3 packages see vincotech.com website.
Vincotech thermistor reference
See Vincotech thermistor reference table at vincotech.com website.
UL recognition and file number
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.
Document No.:
Date:
Modification:
Pages
B0-SP10F3A100S7-LU49F08T-D4-14
13 Dec. 2022
Without Flying Capacitors
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine
the suitability of the information and the product for reader’s intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval
of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or effectiveness.
Copyright Vincotech
47
13 Dec. 2022 / Revision 4
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