-SP10B2A200S705-PA58L96T [VINCOTECH]
Low collector emitter saturation voltage;High speed and smooth switching;
| 型号： | -SP10B2A200S705-PA58L96T |
| 厂家： | 
VINCOTECH |
| 描述： | Low collector emitter saturation voltage;High speed and smooth switching |
| 文件： | 总38页 (文件大小：4882K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
B0-SP10B2A200S705-PA58L96T
datasheet
flowBOOST S3 dual
950 V / 200 A
Topology features
flow S3 12 mm housing
● Auxiliary diodes for FC pre-charge (patent pending)
● Bypass Diode
● Dual Flying Cap Booster
● Kelvin Emitter for improved switching performance
● Temperature sensor
Component features
● Low collector emitter saturation voltage
● High speed and smooth switching
Housing features
● Base isolation: Al2O3
● CTI600 housing material
● Compact, baseplate-less housing
● VINcoPress Technology
Schematic
● Thermo-mechanical push-and-pull force relief
● Press-fit pin
● Reliable cold welding connection
Target applications
● Energy Storage Systems
● Solar Inverters
Types
● B0-SP10B2A200S705-PA58L96T
Copyright Vincotech
1
20 Jan. 2023 / Revision 3
B0-SP10B2A200S705-PA58L96T
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
Inner Boost Switch
VCES
Collector-emitter voltage
950
145
400
276
±20
175
V
A
IC
Collector current (DC current)
Repetitive peak collector current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
ICRM
tp limited by Tjmax
Tj = Tjmax
A
Ptot
W
V
VGES
Gate-emitter voltage
Tjmax
Maximum junction temperature
°C
Inner Boost Diode
VRRM
Peak repetitive reverse voltage
1200
72
V
A
IF
Forward current (DC current)
Repetitive peak forward current
Surge (non-repetitive) forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
IFRM
IFSM
Ptot
tp limited by Tjmax
273
390
168
175
A
Single Half Sine Wave,
tp = 10 ms
Tj = 25 °C
Ts = 80 °C
A
Tj = Tjmax
W
°C
Tjmax
Maximum junction temperature
Inner Boost Sw. Protection Diode
VRRM
Peak repetitive reverse voltage
Forward current (DC current)
Repetitive peak forward current
Total power dissipation
1200
67
V
A
IF
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
IFRM
tp limited by Tjmax
Tj = Tjmax
150
120
175
A
Ptot
W
°C
Tjmax
Maximum junction temperature
Copyright Vincotech
2
20 Jan. 2023 / Revision 3
B0-SP10B2A200S705-PA58L96T
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
Outer Boost Switch
VCES
Collector-emitter voltage
950
145
400
276
±20
175
V
A
IC
Collector current (DC current)
Repetitive peak collector current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
ICRM
tp limited by Tjmax
Tj = Tjmax
A
Ptot
W
V
VGES
Gate-emitter voltage
Tjmax
Maximum junction temperature
°C
Outer Boost Diode
VRRM
Peak repetitive reverse voltage
1200
72
V
A
IF
Forward current (DC current)
Repetitive peak forward current
Surge (non-repetitive) forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
IFRM
IFSM
Ptot
tp limited by Tjmax
273
390
168
175
A
Single Half Sine Wave,
tp = 10 ms
Tj = 25 °C
Ts = 80 °C
A
Tj = Tjmax
W
°C
Tjmax
Maximum junction temperature
Outer Boost Sw. Protection Diode
VRRM
Peak repetitive reverse voltage
Forward current (DC current)
Repetitive peak forward current
Total power dissipation
1200
67
V
A
IF
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
IFRM
tp limited by Tjmax
Tj = Tjmax
150
120
175
A
Ptot
W
°C
Tjmax
Maximum junction temperature
Copyright Vincotech
3
20 Jan. 2023 / Revision 3
B0-SP10B2A200S705-PA58L96T
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
Aux Diode H
VRRM
Peak repetitive reverse voltage
1200
43
V
A
IF
Forward current (DC current)
Surge (non-repetitive) forward current
Surge current capability
Tj = Tjmax
Ts = 80 °C
Tj = 150 °C
Ts = 80 °C
IFSM
I2t
270
365
91
A
Single Half Sine Wave,
tp = 10 ms
A2s
W
°C
Ptot
Total power dissipation
Tj = Tjmax
Tjmax
Maximum junction temperature
175
Aux Diode L
VRRM
Peak repetitive reverse voltage
1200
43
V
A
IF
Forward current (DC current)
Surge (non-repetitive) forward current
Surge current capability
Tj = Tjmax
Ts = 80 °C
Tj = 150 °C
Ts = 80 °C
IFSM
I2t
270
365
91
A
Single Half Sine Wave,
tp = 10 ms
A2s
W
°C
Ptot
Total power dissipation
Tj = Tjmax
Tjmax
Maximum junction temperature
175
ByPass Diode
VRRM
Peak repetitive reverse voltage
1800
85
V
A
IF
Forward current (DC current)
Surge (non-repetitive) forward current
Surge current capability
Tj = Tjmax
Ts = 80 °C
Tj = 25 °C
Ts = 80 °C
IFSM
I2t
600
1800
108
150
A
Single Half Sine Wave,
tp = 10 ms
A2s
W
°C
Ptot
Total power dissipation
Tj = Tjmax
Tjmax
Maximum junction temperature
Copyright Vincotech
4
20 Jan. 2023 / Revision 3
B0-SP10B2A200S705-PA58L96T
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
Module Properties
Thermal Properties
Tstg
Tjop
Storage temperature
-40…+125
°C
°C
Operation temperature under switching
condition
-40…+(Tjmax - 25)
Isolation Properties
Isolation voltage
Creepage distance
Clearance
Visol
DC Test Voltage*
tp = 2 s
6000
9,77
V
mm
mm
9,77
Comparative Tracking Index
*100 % tested in production
CTI
≥ 600
Copyright Vincotech
5
20 Jan. 2023 / Revision 3
B0-SP10B2A200S705-PA58L96T
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Inner Boost Switch
Static
VGE(th)
Gate-emitter threshold voltage
VCE = VGE
0,00334 25
25
4,35
5,1
5,85
V
V
1,83
2,06
2,11
2,35(1)
VCEsat
Collector-emitter saturation voltage
15
200
125
150
ICES
IGES
rg
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
0
950
0
25
4
µA
nA
Ω
20
25
200
0,75
13000
278
Cies
Coes
Cres
Qg
pF
pF
pF
nC
Output capacitance
f = 100 kHz
0
25
25
25
Reverse transfer capacitance
Gate charge
40
±15
0
460
Thermal
λpaste = 5,2 W/mK
(PTM)
Thermal resistance junction to sink(2)
Dynamic
0,34
K/W
Rth(j-s)
25
259,9
258,86
258,6
25,92
28,8
td(on)
Turn-on delay time
Rise time
125
150
25
ns
ns
tr
125
150
25
30,29
193,14
224,38
233,5
22,27
45,76
54,07
5,49
Rgon = 8 Ω
Rgoff = 8 Ω
td(off)
Turn-off delay time
Fall time
125
150
25
ns
±15
600
135
tf
125
150
25
ns
QrFWD=0,271 µC
QrFWD=0,273 µC
QrFWD=0,272 µC
Eon
Turn-on energy (per pulse)
Turn-off energy (per pulse)
125
150
25
5,4
mWs
mWs
5,42
3,2
Eoff
125
150
5,36
6
Copyright Vincotech
6
20 Jan. 2023 / Revision 3
B0-SP10B2A200S705-PA58L96T
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Inner Boost Diode
Static
25
1,5
1,8(1)
600
VF
IR
Forward voltage
60
125
150
1,86
2,01
V
Reverse leakage current
Thermal
Vr = 1200 V
25
105
µA
λpaste = 5,2 W/mK
(PTM)
Thermal resistance junction to sink(2)
Dynamic
0,57
K/W
Rth(j-s)
25
29,31
28,88
IRM
Peak recovery current
125
150
25
A
28,56
15,13
trr
Reverse recovery time
125
150
25
15,51
ns
15,64
0,271
di/dt=4162 A/µs
di/dt=4717 A/µs
di/dt=4994 A/µs
Qr
Recovered charge
±15
600
135
125
150
25
0,273
μC
0,272
0,033
Erec
Reverse recovered energy
Peak rate of fall of recovery current
125
150
25
0,033
mWs
A/µs
0,033
10460,35
8703,36
7469,31
(dirf/dt)max
125
150
Copyright Vincotech
7
20 Jan. 2023 / Revision 3
B0-SP10B2A200S705-PA58L96T
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
VGE [V]
VGS [V]
Min
Max
Inner Boost Sw. Protection Diode
Static
25
1,74
1,83
1,84
2,15(1)
VF
IR
Forward voltage
75
125
150
V
Reverse leakage current
Thermal
Vr = 1200 V
25
55
µA
λpaste = 5,2 W/mK
(PTM)
Thermal resistance junction to sink(2)
0,79
K/W
Rth(j-s)
Copyright Vincotech
8
20 Jan. 2023 / Revision 3
B0-SP10B2A200S705-PA58L96T
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Outer Boost Switch
Static
VGE(th)
Gate-emitter threshold voltage
VCE = VGE
0,00334 25
25
4,35
5,1
5,85
V
V
1,83
2,06
2,11
2,35(1)
VCEsat
Collector-emitter saturation voltage
15
200
125
150
ICES
IGES
rg
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
0
950
0
25
4
µA
nA
Ω
20
25
200
0,75
13000
278
Cies
Coes
Cres
Qg
pF
pF
pF
nC
Output capacitance
f = 100 kHz
0
25
25
25
Reverse transfer capacitance
Gate charge
40
±15
0
460
Thermal
λpaste = 5,2 W/mK
(PTM)
Thermal resistance junction to sink(2)
Dynamic
0,34
K/W
Rth(j-s)
25
259,9
258,86
258,6
25,92
28,8
td(on)
Turn-on delay time
Rise time
125
150
25
ns
ns
tr
125
150
25
30,29
193,14
224,38
233,5
22,27
45,76
54,07
5,49
Rgon = 8 Ω
Rgoff = 8 Ω
td(off)
Turn-off delay time
Fall time
125
150
25
ns
±15
600
135
tf
125
150
25
ns
QrFWD=0,271 µC
QrFWD=0,273 µC
QrFWD=0,272 µC
Eon
Turn-on energy (per pulse)
Turn-off energy (per pulse)
125
150
25
5,4
mWs
mWs
5,42
3,2
Eoff
125
150
5,36
6
Copyright Vincotech
9
20 Jan. 2023 / Revision 3
B0-SP10B2A200S705-PA58L96T
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Outer Boost Diode
Static
25
1,5
1,8(1)
600
VF
IR
Forward voltage
60
125
150
1,86
2,01
V
Reverse leakage current
Thermal
Vr = 1200 V
25
105
µA
λpaste = 5,2 W/mK
(PTM)
Thermal resistance junction to sink(2)
Dynamic
0,57
K/W
Rth(j-s)
25
29,31
28,88
IRM
Peak recovery current
125
150
25
A
28,56
15,13
trr
Reverse recovery time
125
150
25
15,51
ns
15,64
0,271
di/dt=4162 A/µs
di/dt=4717 A/µs
di/dt=4994 A/µs
Qr
Recovered charge
±15
600
135
125
150
25
0,273
μC
0,272
0,033
Erec
Reverse recovered energy
Peak rate of fall of recovery current
125
150
25
0,033
mWs
A/µs
0,033
10460,35
8703,36
7469,31
(dirf/dt)max
125
150
Copyright Vincotech
10
20 Jan. 2023 / Revision 3
B0-SP10B2A200S705-PA58L96T
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
VGE [V]
VGS [V]
Min
Max
Outer Boost Sw. Protection Diode
Static
25
1,74
1,83
1,84
2,15(1)
VF
IR
Forward voltage
75
125
150
V
Reverse leakage current
Thermal
Vr = 1200 V
25
55
µA
λpaste = 5,2 W/mK
(PTM)
Thermal resistance junction to sink(2)
0,79
K/W
Rth(j-s)
Aux Diode H
Static
25
2,22
2,31
2,21
2,54(1)
VF
IR
Forward voltage
50
125
150
25
V
2,5(1)
60
Reverse leakage current
Thermal
Vr = 1200 V
µA
150
4400
8800
λpaste = 5,2 W/mK
(PTM)
Thermal resistance junction to sink(2)
1,04
K/W
Rth(j-s)
Copyright Vincotech
11
20 Jan. 2023 / Revision 3
B0-SP10B2A200S705-PA58L96T
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
VGE [V]
VGS [V]
Min
Max
Aux Diode L
Static
25
2,22
2,31
2,21
2,54(1)
VF
IR
Forward voltage
50
125
150
25
V
2,5(1)
60
Reverse leakage current
Thermal
Vr = 1200 V
µA
150
4400
8800
λpaste = 5,2 W/mK
(PTM)
Thermal resistance junction to sink(2)
1,04
K/W
Rth(j-s)
ByPass Diode
Static
25
1,12
1,1
1,2(1)
VF
IR
Forward voltage
50
125
150
25
V
1,08
10
Reverse leakage current
Thermal
Vr = 1800 V
µA
150
1500
λpaste = 5,2 W/mK
(PTM)
Thermal resistance junction to sink(2)
0,65
K/W
Rth(j-s)
Copyright Vincotech
12
20 Jan. 2023 / Revision 3
B0-SP10B2A200S705-PA58L96T
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
VGE [V]
VGS [V]
Min
Max
Thermistor
Static
R
ΔR/R
P
Rated resistance
Deviation of R100
Power dissipation
Power dissipation constant
B-value
25
22
kΩ
%
R100 = 1484 Ω
100
25
-5
5
130
1,5
mW
mW/K
K
d
25
B(25/50)
Tol. ±1 %
Tol. ±1 %
3962
4000
B(25/100)
B-value
K
Vincotech Thermistor Reference
I
(1)
Value at chip level
(2)
Only valid with pre-applied Vincotech thermal interface material.
Copyright Vincotech
13
20 Jan. 2023 / Revision 3
B0-SP10B2A200S705-PA58L96T
datasheet
Inner Boost Switch Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical output characteristics
Typical output characteristics
IC = f(VCE
)
IC = f(VCE)
600
600
VGE
:
7 V
8 V
500
400
300
200
100
0
500
400
300
200
100
0
9 V
10 V
11 V
12 V
13 V
14 V
15 V
16 V
17 V
0,0
0,5
1,0
1,5
2,0
2,5
3,0
3,5
4,0
0,0
0,5
1,0
1,5
2,0
2,5
3,0
3,5
4,0
V
CE(V)
VCE(V)
tp
=
tp
=
250
15
μs
V
250
150
μs
°C
25 °C
VGE
=
Tj =
125 °C
150 °C
Tj:
VGE from 7 V to 17 V in steps of 1 V
figure 3.
IGBT
figure 4.
IGBT
Typical transfer characteristics
Transient thermal impedance as a function of pulse width
IC = f(VGE
)
Zth(j-s) = f(tp)
0
100
10
-1
75
50
25
0
10
-2
10
0,5
0,2
0,1
-3
10
0,05
0,02
0,01
0,005
0
-4
10
-5
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
10
10
tp(s)
V
GE(V)
tp
=
250
8
μs
D =
tp / T
0,344
25 °C
VCE
=
V
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
IGBT thermal model values
R (K/W)
τ (s)
3,51E-02
6,84E-02
1,60E-01
6,50E-02
1,61E-02
3,52E+00
7,05E-01
8,54E-02
1,97E-02
1,73E-03
Copyright Vincotech
14
20 Jan. 2023 / Revision 3
B0-SP10B2A200S705-PA58L96T
datasheet
Inner Boost Switch Characteristics
figure 5.
IGBT
Safe operating area
IC = f(VCE
)
1000
100
10
1
0,1
0,01
1
10
100
1000
10000
V
CE(V)
D =
single pulse
Ts =
80
15
°C
V
VGE
=
Tj =
Tjmax
Copyright Vincotech
15
20 Jan. 2023 / Revision 3
B0-SP10B2A200S705-PA58L96T
datasheet
Inner Boost Diode Characteristics
figure 6.
FWD
figure 7.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
0
175
150
125
100
75
10
-1
10
-2
10
0,5
0,2
0,1
50
-3
10
0,05
0,02
0,01
0,005
0
25
-4
0
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0
1
2
3
4
5
10
10
10
10
tp(s)
VF(V)
tp
=
250
μs
D =
tp / T
0,566
25 °C
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
FWD thermal model values
R (K/W)
τ (s)
6,09E-02
1,15E-01
2,90E-01
7,95E-02
2,18E-02
2,27E+00
3,23E-01
4,74E-02
5,40E-03
7,49E-04
Copyright Vincotech
16
20 Jan. 2023 / Revision 3
B0-SP10B2A200S705-PA58L96T
datasheet
Inner Boost Sw. Protection Diode Characteristics
figure 8.
FWD
figure 9.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
0
200
150
100
50
10
-1
10
-2
10
0,5
0,2
0,1
-3
10
0,05
0,02
0,01
0,005
0
-4
0
0,0
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0,5
1,0
1,5
2,0
2,5
3,0
3,5
10
10
10
10
tp(s)
VF(V)
tp
=
250
μs
D =
tp / T
0,793
25 °C
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
FWD thermal model values
R (K/W)
τ (s)
5,39E-02
1,33E-01
4,13E-01
1,37E-01
5,71E-02
2,49E+00
2,82E-01
4,97E-02
1,07E-02
1,31E-03
Copyright Vincotech
17
20 Jan. 2023 / Revision 3
B0-SP10B2A200S705-PA58L96T
datasheet
Outer Boost Switch Characteristics
figure 10.
IGBT
figure 11.
IGBT
Typical output characteristics
Typical output characteristics
IC = f(VCE
)
IC = f(VCE)
600
600
VGE
:
7 V
8 V
500
400
300
200
100
0
500
400
300
200
100
0
9 V
10 V
11 V
12 V
13 V
14 V
15 V
16 V
17 V
0,0
0,5
1,0
1,5
2,0
2,5
3,0
3,5
4,0
0,0
0,5
1,0
1,5
2,0
2,5
3,0
3,5
4,0
V
CE(V)
VCE(V)
tp
=
tp
=
250
15
μs
V
250
150
μs
°C
25 °C
VGE
=
Tj =
125 °C
150 °C
Tj:
VGE from 7 V to 17 V in steps of 1 V
figure 12.
IGBT
figure 13.
IGBT
Typical transfer characteristics
Transient thermal impedance as a function of pulse width
IC = f(VGE
)
Zth(j-s) = f(tp)
0
100
10
-1
75
50
25
0
10
-2
10
0,5
0,2
0,1
-3
10
0,05
0,02
0,01
0,005
0
-4
10
-5
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
10
10
tp(s)
V
GE(V)
tp
=
250
8
μs
D =
tp / T
0,344
25 °C
VCE
=
V
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
IGBT thermal model values
R (K/W)
τ (s)
3,51E-02
6,84E-02
1,60E-01
6,50E-02
1,61E-02
3,52E+00
7,05E-01
8,54E-02
1,97E-02
1,73E-03
Copyright Vincotech
18
20 Jan. 2023 / Revision 3
B0-SP10B2A200S705-PA58L96T
datasheet
Outer Boost Switch Characteristics
figure 14.
IGBT
Safe operating area
IC = f(VCE
)
1000
100
10
1
0,1
0,01
1
10
100
1000
10000
V
CE(V)
D =
single pulse
Ts =
80
15
°C
V
VGE
=
Tj =
Tjmax
Copyright Vincotech
19
20 Jan. 2023 / Revision 3
B0-SP10B2A200S705-PA58L96T
datasheet
Outer Boost Diode Characteristics
figure 15.
FWD
figure 16.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
0
175
150
125
100
75
10
-1
10
-2
10
0,5
0,2
0,1
50
-3
10
0,05
0,02
0,01
0,005
0
25
-4
0
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0
1
2
3
4
5
10
10
10
10
tp(s)
VF(V)
tp
=
250
μs
D =
tp / T
0,566
25 °C
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
FWD thermal model values
R (K/W)
τ (s)
6,09E-02
1,15E-01
2,90E-01
7,95E-02
2,18E-02
2,27E+00
3,23E-01
4,74E-02
5,40E-03
7,49E-04
Copyright Vincotech
20
20 Jan. 2023 / Revision 3
B0-SP10B2A200S705-PA58L96T
datasheet
Outer Boost Sw. Protection Diode Characteristics
figure 17.
FWD
figure 18.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
0
200
150
100
50
10
-1
10
-2
10
0,5
0,2
0,1
-3
10
0,05
0,02
0,01
0,005
0
-4
0
0,0
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0,5
1,0
1,5
2,0
2,5
3,0
3,5
10
10
10
10
tp(s)
VF(V)
tp
=
250
μs
D =
tp / T
0,793
25 °C
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
FWD thermal model values
R (K/W)
τ (s)
5,39E-02
1,33E-01
4,13E-01
1,37E-01
5,71E-02
2,49E+00
2,82E-01
4,97E-02
1,07E-02
1,31E-03
Copyright Vincotech
21
20 Jan. 2023 / Revision 3
B0-SP10B2A200S705-PA58L96T
datasheet
Aux Diode H Characteristics
figure 19.
FWD
figure 20.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
1
150
125
100
75
10
0
10
-1
10
-2
10
50
0,5
0,2
0,1
-3
0,05
0,02
0,01
0,005
0
10
25
-4
0
0,0
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0,5
1,0
1,5
2,0
2,5
3,0
3,5
4,0
4,5
10
10
10
10
tp(s)
VF(V)
tp
=
250
μs
D =
tp / T
1,04
25 °C
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
FWD thermal model values
R (K/W)
τ (s)
6,44E-02
1,36E-01
6,27E-01
1,30E-01
8,29E-02
2,63E+00
3,97E-01
6,88E-02
9,91E-03
1,13E-03
Copyright Vincotech
22
20 Jan. 2023 / Revision 3
B0-SP10B2A200S705-PA58L96T
datasheet
Aux Diode L Characteristics
figure 21.
FWD
figure 22.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
1
150
125
100
75
10
0
10
-1
10
-2
10
50
0,5
0,2
0,1
-3
0,05
0,02
0,01
0,005
0
10
25
-4
0
0,0
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0,5
1,0
1,5
2,0
2,5
3,0
3,5
4,0
4,5
10
10
10
10
tp(s)
VF(V)
tp
=
250
μs
D =
tp / T
1,04
25 °C
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
FWD thermal model values
R (K/W)
τ (s)
6,44E-02
1,36E-01
6,27E-01
1,30E-01
8,29E-02
2,63E+00
3,97E-01
6,88E-02
9,91E-03
1,13E-03
Copyright Vincotech
23
20 Jan. 2023 / Revision 3
B0-SP10B2A200S705-PA58L96T
datasheet
ByPass Diode Characteristics
figure 23.
Rectifier
figure 24.
Rectifier
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
0
150
125
100
75
10
-1
10
-2
10
50
0,5
0,2
-3
10
0,1
0,05
0,02
0,01
0,005
0
25
-4
0
0,00
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0,25
0,50
μs
0,75
1,00
1,25
1,50
1,75
VF(V)
10
10
10
10
tp(s)
tp
=
250
D =
tp / T
0,646
25 °C
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
Rectifier thermal model values
R (K/W)
τ (s)
4,48E-02
1,16E-01
3,64E-01
8,07E-02
3,95E-02
3,10E+00
6,03E-01
7,75E-02
1,76E-02
1,68E-03
Copyright Vincotech
24
20 Jan. 2023 / Revision 3
B0-SP10B2A200S705-PA58L96T
datasheet
Thermistor Characteristics
figure 25.
Thermistor
Typical NTC characteristic as function of temperature
RT = f(T)
25000
20000
15000
10000
5000
0
20
40
60
80
100
120
140
T(°C)
Copyright Vincotech
25
20 Jan. 2023 / Revision 3
B0-SP10B2A200S705-PA58L96T
datasheet
Inner Boost Switching Characteristics
figure 26.
IGBT
figure 27.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of IGBT turn on gate resistor
E = f(IC)
E = f(Rg)
15,0
12,5
10,0
7,5
20,0
17,5
15,0
12,5
10,0
7,5
Eon
Eon
Eon
Eon
Eon
Eon
Eoff
Eoff
Eoff
5,0
Eoff
Eoff
5,0
Eoff
2,5
2,5
0,0
0,0
0
50
100
150
200
250
300
0
5
10
15
20
25
30
35
IC(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
=
=
=
=
VCE
VGE
IC
=
=
=
600
±15
8
V
V
Ω
Ω
125 °C
150 °C
600
±15
135
V
V
A
125 °C
150 °C
Tj:
Tj:
Rgon
Rgoff
8
figure 28.
FWD
figure 29.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of IGBT turn on gate resistor
Erec = f(IC)
Erec = f(Rg)
0,05
0,04
0,03
0,02
0,01
0,00
0,08
0,07
0,06
0,05
0,04
0,03
0,02
0,01
0,00
Erec
Erec
Erec
Erec
Erec
Erec
0
50
100
150
200
250
300
0
5
10
15
20
25
30
35
IC(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
8
V
V
Ω
125 °C
150 °C
600
±15
135
V
V
A
125 °C
150 °C
Tj:
Tj:
Copyright Vincotech
26
20 Jan. 2023 / Revision 3
B0-SP10B2A200S705-PA58L96T
datasheet
Inner Boost Switching Characteristics
figure 30.
IGBT
figure 31.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of IGBT turn on gate resistor
t = f(IC)
t = f(Rg)
0
10
0
10
td(on)
td(off)
td(on)
td(off)
-1
10
tr
tf
-1
10
tf
tr
-2
10
10
-2
10
-3
0
50
100
150
200
250
300
0
5
10
15
20
25
30
35
Rg(Ω)
IC(A)
With an inductive load at
With an inductive load at
Tj =
Tj =
150
600
±15
8
°C
V
150
600
±15
135
°C
VCE
=
=
=
=
VCE
=
=
=
V
V
A
VGE
Rgon
Rgoff
VGE
IC
V
Ω
Ω
8
figure 32.
FWD
figure 33.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn on gate resistor
trr = f(IC)
trr = f(Rgon)
0,0225
0,0200
0,0175
0,0150
0,0125
0,0100
0,0075
0,0050
0,0025
0,0000
0,030
0,025
0,020
0,015
0,010
0,005
0,000
trr
trr
trr
trr
trr
trr
0
50
100
150
200
250
300
0
5
10
15
20
25
30
35
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
8
V
V
Ω
125 °C
150 °C
600
±15
135
V
V
A
125 °C
150 °C
Tj:
Tj:
Copyright Vincotech
27
20 Jan. 2023 / Revision 3
B0-SP10B2A200S705-PA58L96T
datasheet
Inner Boost Switching Characteristics
figure 34.
FWD
figure 35.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of IGBT turn on gate resistor
Qr = f(IC)
Qr = f(Rgon)
0,40
0,35
0,30
0,25
0,20
0,15
0,10
0,05
0,00
0,6
0,5
0,4
0,3
0,2
0,1
0,0
Qr
Qr
Qr
Qr
Qr
Qr
0
50
100
150
200
250
300
0
5
10
15
20
25
30
35
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
8
V
V
Ω
125 °C
150 °C
600
±15
135
V
125 °C
150 °C
Tj:
Tj:
V
A
figure 36.
FWD
figure 37.
FWD
Typical peak reverse recovery current as a function of collector current
Typical peak reverse recovery current as a function of IGBT turn on gate resistor
IRM = f(IC)
IRM = f(Rgon)
35
30
25
20
15
10
5
50
40
30
20
10
0
IRM
IRM
IRM
IRM
IRM
IRM
0
0
50
100
150
200
250
300
0
5
10
15
20
25
30
35
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
8
V
V
Ω
125 °C
150 °C
600
±15
135
V
125 °C
150 °C
Tj:
Tj:
V
A
Copyright Vincotech
28
20 Jan. 2023 / Revision 3
B0-SP10B2A200S705-PA58L96T
datasheet
Inner Boost Switching Characteristics
figure 38.
FWD
figure 39.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of turn on gate resistor
diF/dt, dirr/dt = f(IC)
diF/dt, dirr/dt = f(Rgon)
12000
20000
17500
15000
12500
10000
7500
5000
2500
0
diF/dt ‒ ‒ ‒ ‒ ‒
diF/dt ‒ ‒ ‒ ‒ ‒
dirr/dt ──────
dirr/dt ──────
10000
8000
6000
4000
2000
0
0
50
100
150
200
250
300
IC(A)
0
5
10
15
20
25
30
35
R
gon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
8
V
V
Ω
125 °C
150 °C
600
±15
135
V
V
A
125 °C
150 °C
Tj:
Tj:
figure 40.
IGBT
Reverse bias safe operating area
IC = f(VCE
)
450
IC MAX
400
350
300
250
200
150
100
50
0
0
200
400
600
800
1000
1200
V
CE(V)
Tj =
At
150
°C
Ω
Rgon
Rgoff
=
=
8
8
Ω
Copyright Vincotech
29
20 Jan. 2023 / Revision 3
B0-SP10B2A200S705-PA58L96T
datasheet
Outer Boost Switching Characteristics
figure 41.
IGBT
figure 42.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of IGBT turn on gate resistor
E = f(IC)
E = f(Rg)
15,0
12,5
10,0
7,5
20,0
17,5
15,0
12,5
10,0
7,5
Eon
Eon
Eon
Eon
Eon
Eon
Eoff
Eoff
Eoff
5,0
Eoff
Eoff
5,0
Eoff
2,5
2,5
0,0
0,0
0
50
100
150
200
250
300
0
5
10
15
20
25
30
35
IC(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
=
=
=
=
VCE
VGE
IC
=
=
=
600
±15
8
V
V
Ω
Ω
125 °C
150 °C
600
±15
135
V
V
A
125 °C
150 °C
Tj:
Tj:
Rgon
Rgoff
8
figure 43.
FWD
figure 44.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of IGBT turn on gate resistor
Erec = f(IC)
Erec = f(Rg)
0,05
0,04
0,03
0,02
0,01
0,00
0,08
0,07
0,06
0,05
0,04
0,03
0,02
0,01
0,00
Erec
Erec
Erec
Erec
Erec
Erec
0
50
100
150
200
250
300
0
5
10
15
20
25
30
35
IC(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
8
V
V
Ω
125 °C
150 °C
600
±15
135
V
V
A
125 °C
150 °C
Tj:
Tj:
Copyright Vincotech
30
20 Jan. 2023 / Revision 3
B0-SP10B2A200S705-PA58L96T
datasheet
Outer Boost Switching Characteristics
figure 45.
IGBT
figure 46.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of IGBT turn on gate resistor
t = f(IC)
t = f(Rg)
0
10
0
10
td(on)
td(off)
td(on)
td(off)
-1
10
tr
tf
-1
10
tf
tr
-2
10
10
-2
10
-3
0
50
100
150
200
250
300
0
5
10
15
20
25
30
35
Rg(Ω)
IC(A)
With an inductive load at
With an inductive load at
Tj =
Tj =
150
600
±15
8
°C
V
150
600
±15
135
°C
VCE
=
=
=
=
VCE
=
=
=
V
V
A
VGE
Rgon
Rgoff
VGE
IC
V
Ω
Ω
8
figure 47.
FWD
figure 48.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn on gate resistor
trr = f(IC)
trr = f(Rgon)
0,0225
0,0200
0,0175
0,0150
0,0125
0,0100
0,0075
0,0050
0,0025
0,0000
0,030
0,025
0,020
0,015
0,010
0,005
0,000
trr
trr
trr
trr
trr
trr
0
50
100
150
200
250
300
0
5
10
15
20
25
30
35
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
8
V
V
Ω
125 °C
150 °C
600
±15
135
V
V
A
125 °C
150 °C
Tj:
Tj:
Copyright Vincotech
31
20 Jan. 2023 / Revision 3
B0-SP10B2A200S705-PA58L96T
datasheet
Outer Boost Switching Characteristics
figure 49.
FWD
figure 50.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of IGBT turn on gate resistor
Qr = f(IC)
Qr = f(Rgon)
0,40
0,35
0,30
0,25
0,20
0,15
0,10
0,05
0,00
0,6
0,5
0,4
0,3
0,2
0,1
0,0
Qr
Qr
Qr
Qr
Qr
Qr
0
50
100
150
200
250
300
0
5
10
15
20
25
30
35
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
8
V
V
Ω
125 °C
150 °C
600
±15
135
V
125 °C
150 °C
Tj:
Tj:
V
A
figure 51.
FWD
figure 52.
FWD
Typical peak reverse recovery current as a function of collector current
Typical peak reverse recovery current as a function of IGBT turn on gate resistor
IRM = f(IC)
IRM = f(Rgon)
35
30
25
20
15
10
5
50
40
30
20
10
0
IRM
IRM
IRM
IRM
IRM
IRM
0
0
50
100
150
200
250
300
0
5
10
15
20
25
30
35
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
8
V
V
Ω
125 °C
150 °C
600
±15
135
V
125 °C
150 °C
Tj:
Tj:
V
A
Copyright Vincotech
32
20 Jan. 2023 / Revision 3
B0-SP10B2A200S705-PA58L96T
datasheet
Outer Boost Switching Characteristics
figure 53.
FWD
figure 54.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of turn on gate resistor
diF/dt, dirr/dt = f(IC)
diF/dt, dirr/dt = f(Rgon)
12000
20000
17500
15000
12500
10000
7500
5000
2500
0
diF/dt ‒ ‒ ‒ ‒ ‒
diF/dt ‒ ‒ ‒ ‒ ‒
dirr/dt ──────
dirr/dt ──────
10000
8000
6000
4000
2000
0
0
50
100
150
200
250
300
IC(A)
0
5
10
15
20
25
30
35
R
gon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
8
V
V
Ω
125 °C
150 °C
600
±15
135
V
V
A
125 °C
150 °C
Tj:
Tj:
figure 55.
IGBT
Reverse bias safe operating area
IC = f(VCE
)
450
IC MAX
400
350
300
250
200
150
100
50
0
0
200
400
600
800
1000
1200
V
CE(V)
Tj =
At
150
°C
Ω
Rgon
Rgoff
=
=
8
8
Ω
Copyright Vincotech
33
20 Jan. 2023 / Revision 3
B0-SP10B2A200S705-PA58L96T
datasheet
Switching Definitions
figure 56.
IGBT
figure 57.
IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff (ttEoff = integrating time for Eoff
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)
tdoff
IC
IC
VGE
VGE
VCE
tEoff
VCE
tEon
figure 58.
IGBT
figure 59.
IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
IC
IC
VCE
tr
VCE
tf
Copyright Vincotech
34
20 Jan. 2023 / Revision 3
B0-SP10B2A200S705-PA58L96T
datasheet
Switching Definitions
figure 60.
FWD
figure 61.
FWD
Turn-off Switching Waveforms & definition of trr
Turn-on Switching Waveforms & definition of tQr (tQr = integrating time for Qr)
Qr
IF
IF
fitted
VF
Copyright Vincotech
35
20 Jan. 2023 / Revision 3
B0-SP10B2A200S705-PA58L96T
datasheet
Ordering Code
Marking
Version
Ordering Code
B0-SP10B2A200S705-PA58L96T
Without thermal paste
With thermal paste (5,2 W/mK, PTM6000HV)
B0-SP10B2A200S705-PA58L96T-/7/
Name
Date code
UL & VIN
Lot
Serial
Text
Datamatrix
NN-NNNNNNNNNNNNNN-
WWYY
UL VIN
LLLLL
SSSS
TTTTTTVV
Type&Ver
Lot number
Serial
SSSS
Date code
WWYY
TTTTTTTVV
LLLLL
Outline
Pin table [mm]
Pin
1
X
10,8
8,1
5,4
2,7
0
Y
0
Function
Boost1
Boost1
Boost1
Boost1
Boost1
DC+In1
DC+In1
31
32
33
34
35
36
37
38
27,7
41,6
44,3
47
0,05
0
Therm2
Boost1
Boost1
Boost1
Boost1
Boost1
DC+In2
DC+In2
2
0
0
3
0
0
4
0
49,7
52,4
52,4
52,4
41,75
39,9
42,6
39,9
30,4
0
5
0
0
6
0
47,7
50,4
45
47,7
50,4
45
7
0
8
10,65
12,5
9,8
12,5
22
DC+Boost1 39
DC+Boost2
9
47,7 DC+Boost1 40
50,4 DC+Boost1 41
50,4 DC+Boost1 42
47,7 DC+Boost2
50,4 DC+Boost2
50,4 DC+Boost2
10
11
12
47,7
50,4
47,7
50,4
DC-
Boost1
DC-
Boost1
DC-
43
44
45
46
47,7
50,4
47,7
50,4
DC-
Boost2
DC-
Boost2
DC-
13
14
15
22
30,4
27,7
27,7
24,7
24,7
Boost1
DC-
Boost2
DC-
Boost1
FC11
FC11
FC11
FC11
FC12
FC12
FC12
FC12
G17
Boost2
FC21
FC21
FC21
FC21
FC22
FC22
FC22
FC22
G27
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
10,65
7,95
7,65
7,65
11,9
9,2
39,15
39,15
36,45
33,75
29,2
27,9
26,5
25,2
36,5
36,5
25,2
18,4
14,4
11,4
0,05
47
48
49
50
51
52
53
54
55
56
57
58
59
60
41,75
44,45
44,75
44,75
40,5
39,15
39,15
36,45
33,75
29,2
27,9
26,5
25,2
36,5
36,5
25,2
18,4
14,4
11,4
43,2
11,9
9,2
40,5
43,2
21,65
24,7
17,8
12,65
17,15
16,45
24,7
30,75
27,7
S17
S27
C12
34,6
C22
C11
39,75
35,25
35,95
C21
S15
S25
G15
G25
Therm1
Copyright Vincotech
36
20 Jan. 2023 / Revision 3
B0-SP10B2A200S705-PA58L96T
datasheet
Pinout
D16
D26
DC+In1
6-7
DC+In2
DC+Boost1
8-11
DC+Boost2
39-42
37-38
D17
D27
D19
D29
C21
58
FC11
16-19
C11
27
FC21
47-50
D15
D25
Boost1
1-5
Boost2
32-36
T15
29
T25
D55
D45
60
G15
S15
G25
S25
D18
D28
28
59
C12
26
FC12
C22
57
FC22
20-23
51-54
T17
T27
55
D47
D57
24
G17
S17
G27
S27
25
56
Rt
DC-Boost1
12-15
DC-Boost2
43-46
Therm1
30
Therm2
31
Identification
Component
Voltage
Current
Function
Comment
ID
T15, T25
D15, D25
IGBT
FWD
950 V
200 A
60 A
Inner Boost Switch
Inner Boost Diode
Inner Boost Sw. Protection
Diode
1200 V
D45, D55
FWD
1200 V
75 A
T17, T27
D17, D27
IGBT
FWD
950 V
200 A
60 A
Outer Boost Switch
Outer Boost Diode
Outer Boost Sw. Protection
Diode
1200 V
D47, D57
FWD
1200 V
75 A
D19, D29
D18, D28
D16, D26
Rt
FWD
FWD
1200 V
1200 V
1800 V
50 A
50 A
50 A
Aux Diode H
Aux Diode L
Rectifier
Thermistor
ByPass Diode
Thermistor
Copyright Vincotech
37
20 Jan. 2023 / Revision 3
B0-SP10B2A200S705-PA58L96T
datasheet
Packaging instruction
Handling instruction
Standard packaging quantity (SPQ) 45
>SPQ
Standard
<SPQ
Sample
Handling instructions for flow S3 packages see vincotech.com website.
Package data
Package data for flow S3 packages see vincotech.com website.
Vincotech thermistor reference
See Vincotech thermistor reference table at vincotech.com website.
Application Note
For use of pre-charging auxiliary diodes see application note: "The Advantages and Operation of Flying-Capacitor Boosters" at vincotech.com
UL recognition and file number
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.
Document No.:
Date:
Modification:
Pages
B0-SP10B2A200S705-PA58L96T-D3-14
20 Jan. 2023
Without Capacitors
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine
the suitability of the information and the product for reader’s intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval
of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or effectiveness.
Copyright Vincotech
38
20 Jan. 2023 / Revision 3
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