10-FZ062TA099P7-P980D08 [VINCOTECH]
Commutation rugged;Easy to use / drive;Suitable for hard and soft switching;
| 型号： | 10-FZ062TA099P7-P980D08 |
| 厂家： | 
VINCOTECH |
| 描述： | Commutation rugged;Easy to use / drive;Suitable for hard and soft switching |
| 文件： | 总25页 (文件大小：7206K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
10-FZ062TA099P7-P980D08
datasheet
flowPFC 0 CD
600 V / 99 mΩ
Topology features
flow 0 12 mm housing
● Dual Boost PFC
● Half Controlled Converter
● Current sense interface in the collector with low inductive
bypass diode
● Integrated Shunt Resistor
● Integrated DC capacitor
● Temperature sensor
Component features
● Commutation rugged
● Easy to use / drive
● Suitable for hard and soft switching
Housing features
● Base isolation: Al2O3
● Clip-in, reliable mechanical connection, qualified for wave
soldering
Schematic
● Convex shaped substrate for superior thermal contact
● Thermo-mechanical push-and-pull force relief
● Solder pin
Target applications
● Embedded Drives
● Industrial Drives
Types
● 10-FZ062TA099P7-P980D08
Copyright Vincotech
1
29 Jul. 2022 / Revision 1
10-FZ062TA099P7-P980D08
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
PFC Switch
VDSS
Drain-source voltage
600
16
V
A
ID
Drain current (DC current)
Peak drain current
Tj = Tjmax
Ts = 80 °C
IDM
tp limited by Tjmax
VDD = 50 V
100
105
0,53
80
A
EAS
Avalanche energy, single pulse
Avalanche energy, repetitive
MOSFET dv/dt ruggedness
Total power dissipation
Gate-source voltage
ID = 5,1 A
ID = 5,1 A
Ts = 25 °C
Ts = 80 °C
mJ
mJ
V/ns
W
EAR
dv/dt
Ptot
VDD = 50 V
VDS= 0..400 V
Tj = Tjmax
48
VGSS
dv/dt
Tjmax
±20
50
V
Reverse diode dv/dt
V/ns
°C
Maximum Junction Temperature
150
PFC Diode
VRRM
Peak repetitive reverse voltage
650
22
V
A
IF
Forward current (DC current)
Repetitive peak forward current
Surge (non-repetitive) forward current
Surge current capability
Tj = Tjmax
Ts = 80 °C
IFRM
IFSM
I2t
tp limited by Tjmax
75
A
142
100
50
A
Single Half Sine Wave,
tp = 10 ms
Tj = 25 °C
Ts = 80 °C
A2s
W
°C
Ptot
Total power dissipation
Tj = Tjmax
Tjmax
Maximum junction temperature
175
Copyright Vincotech
2
29 Jul. 2022 / Revision 1
10-FZ062TA099P7-P980D08
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
Current Transformer Protection Diode
VRRM
Peak repetitive reverse voltage
Forward current (DC current)
Repetitive peak forward current
Total power dissipation
600
16
V
A
IF
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
IFRM
tp limited by Tjmax
Tj = Tjmax
12
A
Ptot
35
W
°C
Tjmax
Maximum junction temperature
175
Rectifier Thyristor
VRRM
ITRMSM
ITSM
Repetitive peak reverse voltage
1200
25
V
A
Maximum RMS on-state current
Surge on-state current
I2t value
Tj = Tjmax
Ts = 80 °C
Tj = 125 °C
Tj = 125 °C
Ts = 80 °C
Single Half Sine Wave,
tp = 10 ms
320
510
60
A
Single Half Sine Wave,
tp = 8,3 ms
I2t
A2s
W
°C
Ptot(AV)
Tjmax
Mean total power loss
Maximum Junction Temperature
Tj = Tjmax
150
Rectifier Diode
VRRM
Peak repetitive reverse voltage
1600
51
V
A
IF
Forward current (DC current)
Surge (non-repetitive) forward current
Surge current capability
Tj = Tjmax
Ts = 80 °C
Tj = 150 °C
Ts = 80 °C
IFSM
I2t
280
390
68
A
Single Half Sine Wave,
tp = 10 ms
A2s
W
°C
Ptot
Total power dissipation
Tj = Tjmax
Tjmax
Maximum junction temperature
150
PFC Shunt
I
DC current
31,6
10
A
Ptot
Top
Power dissipation
Tc = 70 °C
W
°C
Operation Temperature
-55 ... 170
Copyright Vincotech
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29 Jul. 2022 / Revision 1
10-FZ062TA099P7-P980D08
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
Capacitor (DC)
VMAX
Maximum DC voltage
500
V
Top
Operation Temperature
-55 ... 125
°C
Module Properties
Thermal Properties
Tstg
Tjop
Storage temperature
-40…+125
°C
°C
Operation temperature under switching
condition
-40…+(Tjmax - 25)
Isolation Properties
Isolation voltage
Isolation voltage
Creepage distance
Clearance
Visol
Visol
DC Test Voltage*
tp = 2 s
6000
2500
>12,7
8,99
V
AC Voltage
tp = 1 min
V
mm
mm
Comparative Tracking Index
*100 % tested in production
CTI
≥ 200
Copyright Vincotech
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29 Jul. 2022 / Revision 1
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datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
PFC Switch
Static
25
94,4
168
99(1)
rDS(on)
VGS(th)
IGSS
IDSS
rg
Drain-source on-state resistance
Gate-source threshold voltage
Gate to Source Leakage Current
Zero Gate Voltage Drain Current
Internal gate resistance
Gate charge
10
0
10,5
mΩ
V
125
VDS = VGS
0,00053 25
3
3,5
4
100
1
20
0
0
25
25
nA
µA
Ω
600
5,9
45
Qg
0/10
0
400
400
10,5
0
25
25
nC
Ciss
Short-circuit input capacitance
Short-circuit output capacitance
1952
33
f = 250 kHz
pF
Coss
Thermal
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
1,47
K/W
25
33,19
31,19
8,8
td(on)
Turn-on delay time
Rise time
ns
ns
125
25
tr
125
25
9,61
Rgon = 16 Ω
Rgoff = 16 Ω
140,6
154,91
31,73
34,12
0,074
0,089
0,046
0,058
td(off)
Turn-off delay time
Fall time
ns
125
25
0/10
400
15
tf
ns
125
25
QrFWD=0,049 µC
QrFWD=0,05 µC
Eon
Eoff
Turn-on energy (per pulse)
Turn-off energy (per pulse)
mWs
mWs
125
25
125
Copyright Vincotech
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29 Jul. 2022 / Revision 1
10-FZ062TA099P7-P980D08
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
PFC Diode
Static
25
1,49
1,75
1,87
1,8(1)
102
VF
IR
Forward voltage
16
125
150
V
Reverse leakage current
Thermal
Vr = 650 V
25
20
µA
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
1,9
K/W
25
8,93
7,65
IRM
Peak recovery current
Reverse recovery time
Recovered charge
A
125
25
9,58
trr
ns
125
25
11,32
0,049
0,05
di/dt=1931 A/µs
di/dt=1599 A/µs
Qr
0/10
400
15
μC
125
25
6,958x10-3
Erec
Reverse recovered energy
Peak rate of fall of recovery current
mWs
A/µs
6,961x10-3
125
25
2628,83
1684,95
(dirf/dt)max
125
Copyright Vincotech
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29 Jul. 2022 / Revision 1
10-FZ062TA099P7-P980D08
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
VGE [V]
VGS [V]
Min
Max
Current Transformer Protection Diode
Static
25
1,25
1,58
1,5
1,95(1)
27
VF
IR
Forward voltage
6
V
125
Reverse leakage current
Thermal
Vr = 600 V
25
µA
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
2,68
K/W
Rectifier Thyristor
Static
25
1,39
1,41
1,33
1,32
VT
VT(TO)
rT
On-state voltage
44
44
44
V
V
125
On-state threshold voltage
On-state slope resistance
Direct reverse current
Holding current
125
125
0,9
9
mΩ
µA
mA
25
10
2
IRD
Vr = 1200 V
125
IH
6
25
25
50
90
tp = 10 μs IG
0,2 A diG/dt =
=
IL
Latching current
mA
A/μs
VGT
Gate trigger voltage
Gate trigger current
Gate non-trigger voltage
Gate non-trigger current
Thermal
6
25
1,3
28
0,2
1
V
IGT
6
25
11
mA
V
VGD
2/3 VDRM
125
25
IGD
mA
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
1,16
K/W
Copyright Vincotech
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29 Jul. 2022 / Revision 1
10-FZ062TA099P7-P980D08
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
VGE [V]
VGS [V]
Min
Max
Rectifier Diode
Static
25
1,31
1,33
1,3(1)
1,33(1)
20
VF
IR
Forward voltage
50
V
125
25
Reverse leakage current
Vr = 1600 V
µA
150
1500
Thermal
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
1,03
K/W
PFC Shunt
Static
R
Resistance
10
50
mΩ
%
Tolerance
-1
1
Temperature coeficient
tc
ppm/K
Capacitor (DC)
Static
DC bias voltage =
0 V
C
Capacitance
25
270
nF
%
Tolerance
-20
20
Copyright Vincotech
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29 Jul. 2022 / Revision 1
10-FZ062TA099P7-P980D08
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
VGE [V]
VGS [V]
Min
Max
Thermistor
Static
R
ΔR/R
P
Rated resistance
Deviation of R100
Power dissipation
Power dissipation constant
B-value
25
22
kΩ
%
R100 = 1484 Ω
100
25
-5
5
130
1,5
mW
mW/K
K
d
25
B(25/50)
Tol. ±1 %
Tol. ±1 %
3962
4000
B(25/100)
B-value
K
Vincotech Thermistor Reference
I
(1)
Value at chip level
(2)
Only valid with pre-applied Vincotech thermal interface material.
Copyright Vincotech
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29 Jul. 2022 / Revision 1
10-FZ062TA099P7-P980D08
datasheet
PFC Switch Characteristics
figure 1.
MOSFET
figure 2.
MOSFET
Typical output characteristics
Typical output characteristics
ID = f(VDS
)
ID = f(VDS)
30
30
25
20
15
10
5
VGS
:
-4 V
-2 V
0 V
25
20
15
10
5
2 V
4 V
6 V
8 V
10 V
12 V
14 V
16 V
18 V
20 V
0
-5
-10
-15
-20
-25
-30
0
0
1
2
3
4
5
6
7
8
-5,0
-2,5
0,0
2,5
5,0
7,5
10,0
12,5
V
DS(V)
VDS(V)
tp
=
=
tp
=
250
10
μs
250
125
μs
°C
25 °C
Tj:
VGS
Tj =
V
125 °C
VGS from -4 V to 20 V in steps of 2 V
figure 3.
MOSFET
figure 4.
MOSFET
Typical transfer characteristics
Transient thermal impedance as a function of pulse width
ID = f(VGS
)
Zth(j-s) = f(tp)
1
15,0
10
12,5
10,0
7,5
0
10
-1
10
5,0
0,5
0,2
-2
10
0,1
0,05
0,02
0,01
0,005
0
2,5
-3
0,0
10
-5
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
0
1
2
3
4
5
6
10
V
GS(V)
tp(s)
tp
=
=
250
10
μs
V
D =
tp / T
1,469
25 °C
Tj:
VDS
125 °C
Rth(j-s) =
K/W
MOSFET thermal model values
R (K/W)
τ (s)
1,02E-01
3,83E-01
6,43E-01
2,21E-01
1,22E-01
1,98E+00
1,58E-01
4,63E-02
6,10E-03
7,22E-04
Copyright Vincotech
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29 Jul. 2022 / Revision 1
10-FZ062TA099P7-P980D08
datasheet
PFC Switch Characteristics
figure 5.
MOSFET
Safe operating area
ID = f(VDS
)
100
10
1
0,1
0,01
1
10
100
1000
10000
V
DS(V)
D =
single pulse
Ts =
80
10
°C
V
VGS
=
Tj =
Tjmax
Copyright Vincotech
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29 Jul. 2022 / Revision 1
10-FZ062TA099P7-P980D08
datasheet
PFC Diode Characteristics
figure 6.
FWD
figure 7.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
1
40
30
20
10
0
10
0
10
-1
10
0,5
0,2
0,1
-2
10
0,05
0,02
0,01
0,005
0
-3
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0
1
2
3
4
5
10
10
10
10
tp(s)
VF(V)
tp
=
250
μs
D =
tp / T
1,904
25 °C
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
FWD thermal model values
R (K/W)
τ (s)
7,15E-02
1,55E-01
6,64E-01
5,55E-01
3,01E-01
1,46E-01
1,17E-02
3,48E+00
4,88E-01
9,51E-02
3,49E-02
7,59E-03
1,63E-03
1,33E-03
Copyright Vincotech
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10-FZ062TA099P7-P980D08
datasheet
Current Transformer Protection Diode Characteristics
figure 8.
FWD
figure 9.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
1
17,5
15,0
12,5
10,0
7,5
10
0
10
-1
10
0,5
0,2
0,1
5,0
-2
10
0,05
0,02
0,01
0,005
0
2,5
-3
0,0
0,0
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0,5
1,0
1,5
2,0
2,5
10
10
10
10
tp(s)
VF(V)
tp
=
250
μs
D =
tp / T
2,682
25 °C
Tj:
125 °C
Rth(j-s) =
K/W
FWD thermal model values
R (K/W)
τ (s)
1,11E-01
2,71E-01
7,97E-01
6,34E-01
5,36E-01
3,32E-01
2,77E+00
2,27E-01
4,98E-02
1,25E-02
2,88E-03
6,60E-04
Copyright Vincotech
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10-FZ062TA099P7-P980D08
datasheet
Rectifier Thyristor Characteristics
figure 10.
Thyristor
figure 11.
Thyristor
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
1
50
40
30
20
10
0
10
0
10
-1
10
-2
10
0,5
0,2
0,1
-3
0,05
0,02
0,01
0,005
0
10
-4
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0,00
0,25
0,50
μs
0,75
1,00
1,25
1,50
1,75
VF(V)
10
10
10
10
tp(s)
tp
=
250
D =
tp / T
1,165
25 °C
Tj:
125 °C
Rth(j-s) =
K/W
Thyristor thermal model values
R (K/W)
τ (s)
1,32E-01
4,51E-01
4,32E-01
1,06E-01
4,49E-02
9,48E-01
1,25E-01
4,22E-02
5,61E-03
1,42E-03
Copyright Vincotech
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10-FZ062TA099P7-P980D08
datasheet
Rectifier Diode Characteristics
figure 12.
Rectifier
figure 13.
Rectifier
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
1
100
75
50
25
0
10
0
10
-1
10
-2
10
0,5
0,2
0,1
-3
0,05
0,02
0,01
0,005
0
10
-4
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0,00
0,25
0,50
μs
0,75
1,00
1,25
1,50
1,75
VF(V)
10
10
10
10
tp(s)
tp
=
250
D =
tp / T
1,03
25 °C
Tj:
125 °C
Rth(j-s) =
K/W
Rectifier thermal model values
R (K/W)
τ (s)
5,79E-02
1,32E-01
6,73E-01
1,09E-01
5,86E-02
2,65E+00
4,48E-01
8,28E-02
1,86E-02
2,34E-03
Copyright Vincotech
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datasheet
Thermistor Characteristics
figure 14.
Thermistor
Typical NTC characteristic as function of temperature
RT = f(T)
25000
20000
15000
10000
5000
0
20
40
60
80
100
120
140
T(°C)
Copyright Vincotech
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datasheet
PFC Switching Characteristics
figure 15.
MOSFET
figure 16.
MOSFET
Typical switching energy losses as a function of drain current
Typical switching energy losses as a function of MOSFET turn on gate resistor
E = f(ID)
E = f(Rg)
0,200
0,175
0,150
0,125
0,100
0,075
0,050
0,025
0,000
0,30
0,25
0,20
0,15
0,10
0,05
0,00
Eon
Eoff
Eon
Eoff
Eon
Eoff
Eon
Eoff
0
5
10
15
20
25
30
0
10
20
30
40
50
60
70
ID(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
Tj:
Tj:
VDS
VGS
=
=
=
=
VDS
VGS
ID
=
=
=
400
0/10
16
V
V
Ω
Ω
125 °C
400
0/10
15
V
V
A
125 °C
Rgon
Rgoff
16
figure 17.
FWD
figure 18.
FWD
Typical reverse recovered energy loss as a function of drain current
Typical reverse recovered energy loss as a function of MOSFET turn on gate resistor
Erec = f(ID)
Erec = f(Rg)
0,010
0,008
0,006
0,004
0,002
0,000
0,030
0,025
0,020
0,015
0,010
0,005
0,000
Erec
Erec
Erec
Erec
0
5
10
15
20
25
30
0
10
20
30
40
50
60
70
ID(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
Tj:
Tj:
VDS
VGS
=
=
=
VDS
VGS
ID
=
=
=
400
0/10
16
V
V
Ω
125 °C
400
0/10
15
V
V
A
125 °C
Rgon
Copyright Vincotech
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datasheet
PFC Switching Characteristics
figure 19.
MOSFET
figure 20.
MOSFET
Typical switching times as a function of drain current
Typical switching times as a function of MOSFET turn on gate resistor
t = f(ID)
t = f(Rg)
0
10
0
10
td(off)
td(off)
-1
10
-1
10
td(on)
td(on)
tf
tr
tf
tr
-2
10
-2
10
-3
10
-3
10
0
5
10
15
20
25
30
0
10
20
30
40
50
60
70
ID(A)
Rg(Ω)
With an inductive load at
With an inductive load at
Tj =
Tj =
125
400
0/10
16
°C
V
125
400
0/10
15
°C
VDS
=
=
=
=
VDS
=
=
=
V
V
A
VGS
Rgon
Rgoff
VGS
ID
V
Ω
Ω
16
figure 21.
FWD
figure 22.
FWD
Typical reverse recovery time as a function of drain current
Typical reverse recovery time as a function of MOSFET turn on gate resistor
trr = f(ID)
trr = f(Rgon)
0,0175
0,0150
0,0125
0,0100
0,0075
0,0050
0,0025
0,0000
0,0175
0,0150
0,0125
0,0100
0,0075
0,0050
0,0025
0,0000
trr
trr
trr
trr
0
5
10
15
20
25
30
0
10
20
30
40
50
60
70
ID(A)
Rgon(Ω)
VDS
VGS
=
=
=
VDS
VGS
ID
=
=
=
At
400
0/10
16
V
V
Ω
At
400
V
V
A
25 °C
25 °C
Tj:
Tj:
125 °C
0/10
15
125 °C
Rgon
Copyright Vincotech
18
29 Jul. 2022 / Revision 1
10-FZ062TA099P7-P980D08
datasheet
PFC Switching Characteristics
figure 23.
FWD
figure 24.
FWD
Typical recovered charge as a function of drain current
Typical recovered charge as a function of MOSFET turn on gate resistor
Qr = f(ID)
Qr = f(Rgon)
0,07
0,06
0,05
0,04
0,03
0,02
0,01
0,00
0,12
0,10
0,08
0,06
0,04
0,02
0,00
Qr
Qr
Qr
Qr
0
5
10
15
20
25
30
0
10
20
30
40
50
60
70
ID(A)
Rgon(Ω)
VDS
VGS
=
=
=
VDS
VGS
ID
=
=
=
At
400
V
V
Ω
At
400
0/10
15
V
V
A
25 °C
25 °C
Tj:
Tj:
0/10
16
125 °C
125 °C
Rgon
figure 25.
FWD
figure 26.
FWD
Typical peak reverse recovery current as a function of drain current
Typical peak reverse recovery current as a function of MOSFET turn on gate resistor
IRM = f(ID)
IRM = f(Rgon)
12
10
8
17,5
15,0
12,5
10,0
7,5
IRM
IRM
6
4
5,0
2
IRM
IRM
2,5
0
0,0
0
5
10
15
20
25
30
0
10
20
30
40
50
60
70
ID(A)
Rgon(Ω)
VDS
VGS
=
=
=
VDS
VGS
ID
=
=
=
At
400
0/10
16
V
V
Ω
At
400
0/10
15
V
V
A
25 °C
25 °C
Tj:
Tj:
125 °C
125 °C
Rgon
Copyright Vincotech
19
29 Jul. 2022 / Revision 1
10-FZ062TA099P7-P980D08
datasheet
PFC Switching Characteristics
figure 27.
FWD
figure 28.
FWD
Typical rate of fall of forward and reverse recovery current as a function of drain current
Typical rate of fall of forward and reverse recovery current as a function of turn on gate resistor
diF/dt, dirr/dt = f(ID)
diF/dt, dirr/dt = f(Rgon)
4000
7000
6000
5000
4000
3000
2000
1000
0
diF/dt ‒ ‒ ‒ ‒ ‒
dirr/dt ──────
diF/dt ‒ ‒ ‒ ‒ ‒
dirr/dt ──────
3500
3000
2500
2000
1500
1000
500
0
0
5
10
15
20
25
30
0
10
20
30
40
50
60
70
ID(A)
Rgon(Ω)
VDS
=
=
=
VDS
=
=
=
At
400
V
V
Ω
At
400
0/10
15
V
V
A
25 °C
25 °C
Tj:
Tj:
VGS
VGS
ID
0/10
16
125 °C
125 °C
Rgon
figure 29.
MOSFET
Reverse bias safe operating area
ID = f(VDS
)
25
ID MAX
20
15
10
5
0
0
100
200
300
400
500
600
700
V
DS(V)
Tj =
At
125
16
°C
Ω
Rgon
Rgoff
=
=
16
Ω
Copyright Vincotech
20
29 Jul. 2022 / Revision 1
10-FZ062TA099P7-P980D08
datasheet
PFC Switching Definitions
figure 30.
MOSFET
figure 31.
MOSFET
Turn-off Switching Waveforms & definition of tdoff, tEoff (tEoff = integrating time for Eoff
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon
)
tdoff
IC
IC
VGE
VGE
VCE
tEoff
VCE
tEon
figure 32.
MOSFET
figure 33.
MOSFET
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
ID
IC
VCE
tr
VDS
tf
Copyright Vincotech
21
29 Jul. 2022 / Revision 1
10-FZ062TA099P7-P980D08
datasheet
PFC Switching Definitions
figure 34.
FWD
figure 35.
FWD
Turn-off Switching Waveforms & definition of ttrr
Turn-on Switching Waveforms & definition of tQrr (tQrr = integrating time for Qrr)
Qr
IF
IF
fitted
VF
figure 36.
FWD
Turn-on Switching Waveforms & definition of tErec (tErec = integrating time for Erec
)
%
Erec
tErec
Prec
3.01
3.1
3.19
3.28
3.37
3.46
t (µs)
Copyright Vincotech
22
29 Jul. 2022 / Revision 1
10-FZ062TA099P7-P980D08
datasheet
Ordering Code
Version
Ordering Code
Without thermal paste
10-FZ062TA099P7-P980D08
10-FZ062TA099P7-P980D08-/7/
10-FZ062TA099P7-P980D08-/3/
With thermal paste (5,2 W/mK, PTM6000HV)
With thermal paste (3,4 W/mK, PSX-P7)
Marking
Name
Date code
UL & VIN
Lot
Serial
Text
NN-NNNNNNNNNNNNNN-
TTTTTTVV
WWYY
UL VIN
LLLLL
SSSS
Type&Ver
Lot number
Serial
Date code
Datamatrix
TTTTTTTVV
LLLLL
SSSS
WWYY
Outline
Pin table [mm]
Pin
1
X
Y
0
Function
Rt1
33,5
33,5
29,5
29,5
26,7
23,9
21,05
14,85
14,05
12,05
9,5
2
2,8
2,8
0
Rt2
3
Sa
4
Sb
5
0
-DC
-DC
G1
6
0
7
0
8
0
S1
9
13,35
0
ST1
G2
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
12,05
0
-PFC1
G3
8,2
6,7
12,05
0
-PFC2
S2
3,9
2,2
13,35
0
ST2
G4
1,1
0
22,7
22,7
20,2
22,7
22,7
22,7
22,7
22,7
18,55
16,05
8,7
8,7
PFC2
+PFC
+PFC
PFC1
GT2
+DC
+DC
GT1
L1
7,1
7,1
14,2
20,7
23,5
26
28,8
33,5
33,5
33,5
31
L1
L2
L2
Copyright Vincotech
23
29 Jul. 2022 / Revision 1
10-FZ062TA099P7-P980D08
datasheet
Pinout
+PFC
18,19
D1
D3
+DC
22,23
GT2
21
GT1
24
TH1
PFC1
20
PFC2
17
TH2
D11
D12
L1
25,26
ST1
9
ST2
15
L2
C1
C2
27,28
T1
T2
G2
10
G4
16
G1
7
D6
D5
S1
8
S2
14
G3
12
R1
-PFC1
11
-PFC2
13
-DC
5,6
Sa
3
Sb
4
NTC
Rt1
1
Rt2
2
Identification
Component
Voltage
Current
Function
Comment
ID
T1, T2
MOSFET
FWD
600 V
650 V
77 mΩ
16 A
PFC Switch
PFC Diode
D1, D2, D3, D4
Current Transformer Protection
Diode
D11, D12
FWD
600 V
6 A
TH1, TH2
D6, D5
R1, R2
C1, C2
NTC
Thyristor
Rectifier
Shunt
1200 V
1600 V
25 A
50 A
Rectifier Thyristor
Rectifier Diode
PFC Shunt
Capacitor
Thermistor
500 V
Capacitor (DC)
Thermistor
Copyright Vincotech
24
29 Jul. 2022 / Revision 1
10-FZ062TA099P7-P980D08
datasheet
Packaging instruction
Handling instruction
Standard packaging quantity (SPQ) 135
>SPQ
Standard
<SPQ
Sample
Handling instructions for flow 0 packages see vincotech.com website.
Package data
Package data for flow 0 packages see vincotech.com website.
Vincotech thermistor reference
See Vincotech thermistor reference table at vincotech.com website.
UL recognition and file number
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.
Document No.:
Date:
Modification:
Pages
10-FZ062TA099P7-P980D08-D1-14
29 Jul. 2022
Initial Release
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine
the suitability of the information and the product for reader’s intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval
of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or effectiveness.
Copyright Vincotech
25
29 Jul. 2022 / Revision 1
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