10-FZ06B2A060P701-PB53L73 [VINCOTECH]
Commutation rugged;Easy to use / drive;Suitable for hard and soft switching;
| 型号： | 10-FZ06B2A060P701-PB53L73 |
| 厂家： | 
VINCOTECH |
| 描述： | Commutation rugged;Easy to use / drive;Suitable for hard and soft switching |
| 文件： | 总19页 (文件大小：6971K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
10-FZ06B2A060P701-PB53L73
datasheet
flowBOOST 0 dual
600 V / 60 mΩ
Features
flow 0 12 mm housing
● High efficiency dual booster
● Low Inductance Layout
● Ultra fast switching frequency
● Integrated temperature sensor
Schematic
Target applications
● Power Supply
● Solar Inverters
Types
● 10-FZ06B2A060P701-PB53L73
Copyright Vincotech
1
14 Oct. 2021 / Revision 2
10-FZ06B2A060P701-PB53L73
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
Boost Switch
VDSS
Drain-source voltage
600
23
V
A
ID
Drain current (DC current)
Peak drain current
Tj = Tjmax
Ts = 80 °C
IDM
tp limited by Tjmax
VDD = 50 V
151
159
0,8
80
A
EAS
Avalanche energy, single pulse
Avalanche energy, repetitive
MOSFET dv/dt ruggedness
Total power dissipation
Gate-source voltage
ID = 0 A
ID = 0 A
mJ
mJ
V/ns
W
EAR
dv/dt
Ptot
VDD = 50 V
VDS= 0..400 V
Tj = Tjmax
Ts = 25 °C
Ts = 80 °C
67
VGSS
dv/dt
Tjmax
±20
50
V
Reverse diode dv/dt
V/ns
°C
Maximum Junction Temperature
150
Boost Diode
VRRM
Peak repetitive reverse voltage
650
28
V
A
IF
Forward current (DC current)
Repetitive peak forward current
Surge (non-repetitive) forward current
Surge current capability
Tj = Tjmax
Ts = 80 °C
IFRM
IFSM
I2t
tp limited by Tjmax
62
A
142
100
60
A
Single Half Sine Wave,
tp = 10 ms
Tj = 25 °C
Ts = 80 °C
A2s
W
°C
Ptot
Total power dissipation
Tj = Tjmax
Tjmax
Maximum junction temperature
175
Capacitor (DC)
VMAX
Maximum DC voltage
630
V
Top
Operation Temperature
-55 ... 150
°C
Copyright Vincotech
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14 Oct. 2021 / Revision 2
10-FZ06B2A060P701-PB53L73
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
Module Properties
Thermal Properties
Tstg
Tjop
Storage temperature
-40…+125
°C
°C
Operation temperature under switching
condition
-40…+(Tjmax - 25)
Isolation Properties
Isolation voltage
Isolation voltage
Creepage distance
Clearance
Visol
Visol
DC Test Voltage*
tp = 2 s
6000
2500
>12,7
9,1
V
AC Voltage
tp = 1 min
V
mm
mm
Comparative Tracking Index
*100 % tested in production
CTI
≥ 200
Copyright Vincotech
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14 Oct. 2021 / Revision 2
10-FZ06B2A060P701-PB53L73
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Boost Switch
Static
25
63
60(1)
rDS(on)
VGS(th)
IGSS
IDSS
rg
Drain-source on-state resistance
Gate-source threshold voltage
Gate to Source Leakage Current
Zero Gate Voltage Drain Current
Internal gate resistance
Gate charge
10
0
15,9
mΩ
V
125
115
0,0008
25
25
25
3
3,5
4
100
1
20
0
0
nA
µA
Ω
600
2,8
67
Qg
0/10
0
400
400
15,9
0
25
25
nC
Ciss
Short-circuit input capacitance
Short-circuit output capacitance
2895
48
f = 250 kHz
pF
Coss
Thermal
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
1,05
K/W
25
22,08
21,44
4,8
td(on)
Turn-on delay time
Rise time
ns
ns
125
25
tr
125
25
5,44
73,6
81,6
5,7
Rgon = 4 Ω
Rgoff = 4 Ω
td(off)
Turn-off delay time
Fall time
ns
125
25
0/10
400
20
tf
ns
125
25
6,59
0,052
0,062
0,022
0,031
QrFWD=0,052 µC
QrFWD=0,055 µC
Eon
Eoff
Turn-on energy (per pulse)
Turn-off energy (per pulse)
mWs
mWs
125
25
125
Copyright Vincotech
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14 Oct. 2021 / Revision 2
10-FZ06B2A060P701-PB53L73
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Boost Diode
Static
25
1,47
1,67
1,75
1,8(1)
120
VF
IR
Forward voltage
20
125
150
V
Reverse leakage current
Thermal
Vr = 650 V
25
24
µA
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
1,58
K/W
25
14,48
13,96
8,32
IRRM
Peak recovery current
Reverse recovery time
Recovered charge
A
125
25
trr
ns
125
25
9,31
0,052
0,055
0,031
0,028
4387
3791
di/dt=4821 A/µs
di/dt=4517 A/µs
Qr
0/10
400
20
μC
125
25
Erec
Reverse recovered energy
Peak rate of fall of recovery current
mWs
A/µs
125
25
(dirf/dt)max
125
Capacitor (DC)
Static
DC bias voltage =
0 V
C
Capacitance
25
33
nF
%
Tolerance
-5
5
Copyright Vincotech
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14 Oct. 2021 / Revision 2
10-FZ06B2A060P701-PB53L73
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
VGE [V]
VGS [V]
Min
Max
Thermistor
Static
R
ΔR/R
P
Rated resistance
Deviation of R100
Power dissipation
Power dissipation constant
B-value
25
22
kΩ
%
R100 = 1484 Ω
100
-5
5
5
mW
mW/K
K
d
25
1,5
B(25/50)
Tol. ±1 %
Tol. ±1 %
3962
4000
B(25/100)
B-value
K
Vincotech Thermistor Reference
I
(1)
Value at chip level
(2)
Only valid with pre-applied Vincotech thermal interface material.
Copyright Vincotech
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10-FZ06B2A060P701-PB53L73
datasheet
Boost Switch Characteristics
figure 1.
MOSFET
figure 2.
MOSFET
Typical output characteristics
Typical output characteristics
ID = f(VDS
)
ID = f(VDS)
80
80
VGS
:
-4 V
-2 V
0 V
60
40
2 V
60
40
20
0
4 V
6 V
8 V
20
10 V
12 V
14 V
16 V
18 V
20 V
0
-20
-40
-60
-80
0,0
2,5
5,0
7,5
10,0
12,5
-5,0
-2,5
0,0
2,5
5,0
7,5
10,0
12,5
V
DS(V)
VDS(V)
tp
=
=
tp
=
250
10
μs
V
250
125
μs
°C
25 °C
Tj:
VGS
Tj =
125 °C
VGS from -4 V to 20 V in steps of 2 V
figure 3.
MOSFET
figure 4.
MOSFET
Typical transfer characteristics
Transient thermal impedance as a function of pulse width
ID = f(VGS
)
Zth(j-s) = f(tp)
1
40
10
35
30
25
20
15
10
5
0
10
-1
10
0,5
0,2
-2
10
0,1
0,05
0,02
0,01
0,005
0
-3
0
0
10
-5
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
1
2
3
4
5
6
10
V
GS(V)
tp(s)
tp
=
=
250
10
μs
V
D =
tp / T
1,047
25 °C
Tj:
VDS
125 °C
Rth(j-s) =
K/W
MOSFET thermal model values
R (K/W)
τ (s)
6,31E-02
2,11E-01
5,41E-01
1,55E-01
7,68E-02
1,89E+00
2,50E-01
5,16E-02
6,52E-03
6,66E-04
Copyright Vincotech
7
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10-FZ06B2A060P701-PB53L73
datasheet
Boost Switch Characteristics
figure 5.
MOSFET
Safe operating area
ID = f(VDS
)
1000
100
10
1
0,1
0,01
1
10
100
1000
10000
V
DS(V)
D =
single pulse
Ts =
80
10
°C
V
VGS
=
Tj =
Tjmax
Copyright Vincotech
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14 Oct. 2021 / Revision 2
10-FZ06B2A060P701-PB53L73
datasheet
Boost Diode Characteristics
figure 6.
FWD
figure 7.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
1
60
50
40
30
20
10
0
10
0
10
-1
10
0,5
0,2
0,1
-2
10
0,05
0,02
0,01
0,005
0
-3
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0,0
0,5
1,0
1,5
2,0
2,5
3,0
3,5
4,0
10
10
10
10
tp(s)
VF(V)
tp
=
250
μs
D =
tp / T
1,58
25 °C
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
FWD thermal model values
R (K/W)
τ (s)
8,96E-02
2,36E-01
8,04E-01
3,49E-01
1,01E-01
2,60E+00
2,99E-01
5,52E-02
6,69E-03
1,09E-03
Copyright Vincotech
9
14 Oct. 2021 / Revision 2
10-FZ06B2A060P701-PB53L73
datasheet
Thermistor Characteristics
figure 8.
Thermistor
Typical NTC characteristic as function of temperature
RT = f(T)
25000
20000
15000
10000
5000
0
20
40
60
80
100
120
140
T(°C)
Copyright Vincotech
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14 Oct. 2021 / Revision 2
10-FZ06B2A060P701-PB53L73
datasheet
Boost Switching Characteristics
figure 9.
MOSFET
figure 10.
MOSFET
Typical switching energy losses as a function of drain current
Typical switching energy losses as a function of gate resistor
E = f(ID)
E = f(Rg)
0,125
0,100
0,075
0,050
0,025
0,000
0,150
0,125
0,100
0,075
0,050
0,025
0,000
Eon
Eon
Eon
Eoff
Eon
Eoff
Eoff
Eoff
0
5
10
15
20
25
30
35
40
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
ID(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
Tj:
Tj:
VDS
VGS
=
=
=
=
VDS
VGS
ID
=
=
=
400
0/10
4
V
V
Ω
Ω
125 °C
400
0/10
20
V
V
A
125 °C
Rgon
Rgoff
4
figure 11.
FWD
figure 12.
FWD
Typical reverse recovered energy loss as a function of drain current
Typical reverse recovered energy loss as a function of gate resistor
Erec = f(ID)
Erec = f(Rg)
0,035
0,030
0,025
0,020
0,015
0,010
0,005
0,000
0,05
0,04
0,03
0,02
0,01
0,00
Erec
Erec
Erec
Erec
0
5
10
15
20
25
30
35
40
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
ID(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
Tj:
Tj:
VDS
VGS
=
=
=
VDS
VGS
ID
=
=
=
400
0/10
4
V
V
Ω
125 °C
400
0/10
20
V
125 °C
V
A
Rgon
Copyright Vincotech
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14 Oct. 2021 / Revision 2
10-FZ06B2A060P701-PB53L73
datasheet
Boost Switching Characteristics
figure 13.
MOSFET
figure 14.
MOSFET
Typical switching times as a function of drain current
Typical switching times as a function of gate resistor
t = f(ID)
t = f(Rg)
0
10
0
10
td(off)
-1
10
-1
10
td(off)
td(on)
td(on)
tf
tr
-2
10
-2
10
tr
tf
-3
10
-3
10
0
5
10
15
20
25
30
35
40
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
ID(A)
Rg(Ω)
With an inductive load at
With an inductive load at
Tj =
Tj =
125
400
0/10
4
°C
V
125
400
0/10
20
°C
VDS
=
=
=
=
VDS
=
=
=
V
V
A
VGS
Rgon
Rgoff
VGS
ID
V
Ω
Ω
4
figure 15.
FWD
figure 16.
FWD
Typical reverse recovery time as a function of drain current
Typical reverse recovery time as a function of turn off gate resistor
trr = f(ID)
trr = f(Rgoff)
0,0150
0,0125
0,0100
0,0075
0,0050
0,0025
0,0000
0,0150
0,0125
0,0100
0,0075
0,0050
0,0025
0,0000
trr
trr
trr
trr
0
5
10
15
20
25
30
35
40
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
ID(A)
Rgoff(Ω)
VDS
VGS
=
=
=
VDS
VGS
ID
=
=
=
At
400
0/10
4
V
At
400
V
V
A
25 °C
25 °C
Tj:
Tj:
V
125 °C
0/10
20
125 °C
Rgon
Ω
Copyright Vincotech
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14 Oct. 2021 / Revision 2
10-FZ06B2A060P701-PB53L73
datasheet
Boost Switching Characteristics
figure 17.
FWD
figure 18.
FWD
Typical recovered charge as a function of drain current
Typical recovered charge as a function of turn off gate resistor
Qr = f(ID)
Qr = f(Rgoff)
0,08
0,07
0,06
0,05
0,04
0,03
0,02
0,01
0,00
0,08
0,07
0,06
0,05
0,04
0,03
0,02
0,01
0,00
Qr
Qr
Qr
Qr
0
5
10
15
20
25
30
35
40
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
ID(A)
Rgoff(Ω)
VDS
VGS
=
=
=
VDS
VGS
ID
=
=
=
At
400
0/10
4
V
V
Ω
At
400
0/10
20
V
25 °C
25 °C
Tj:
Tj:
125 °C
V
A
125 °C
Rgon
figure 19.
FWD
figure 20.
FWD
Typical peak reverse recovery current as a function of drain current
Typical peak reverse recovery current as a function of turn off gate resistor
IRM = f(ID)
IRM = f(Rgoff)
17,5
15,0
12,5
10,0
7,5
25
20
15
10
5
IRM
IRM
IRM
IRM
5,0
2,5
0,0
0
0,0
0
5
10
15
20
25
30
35
40
2,5
5,0
7,5
10,0
12,5
15,0
17,5
ID(A)
Rgoff(Ω)
VDS
VGS
=
=
=
VDS
VGS
ID
=
=
=
At
400
0/10
4
V
V
Ω
At
400
0/10
20
V
25 °C
25 °C
Tj:
Tj:
125 °C
V
A
125 °C
Rgon
Copyright Vincotech
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10-FZ06B2A060P701-PB53L73
datasheet
Boost Switching Characteristics
figure 21.
FWD
figure 22.
FWD
Typical rate of fall of forward and reverse recovery current as a function of drain current
Typical rate of fall of forward and reverse recovery current as a function of turn off gate resistor
diF/dt, dirr/dt = f(ID)
diF/dt, dirr/dt = f(Rgoff)
8000
8000
7000
6000
5000
4000
3000
2000
1000
0
diF/dt ‒ ‒ ‒ ‒ ‒
dirr/dt ──────
diF/dt ‒ ‒ ‒ ‒ ‒
dirr/dt ──────
7000
6000
5000
4000
3000
2000
1000
0
0
5
10
15
20
25
30
35
40
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
ID(A)
Rgoff(Ω)
VDS
=
=
=
VDS
VGS
ID
=
=
=
At
400
0/10
4
V
V
Ω
At
400
0/10
20
V
V
A
25 °C
25 °C
Tj:
Tj:
VGS
125 °C
125 °C
Rgon
figure 23.
MOSFET
Reverse bias safe operating area
ID = f(VDS
)
35
ID MAX
30
25
20
15
10
5
0
0
100
200
300
400
500
600
700
V
DS(V)
Tj =
At
125
4
°C
Ω
Rgon
Rgoff
=
=
4
Ω
Copyright Vincotech
14
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10-FZ06B2A060P701-PB53L73
datasheet
Boost Switching Definitions
figure 24.
MOSFET
figure 25.
MOSFET
Turn-off Switching Waveforms & definition of tdoff, tEoff (tEoff = integrating time for Eoff
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon
)
tdoff
IC
IC
VGE
VGE
VCE
tEoff
VCE
tEon
figure 26.
MOSFET
figure 27.
MOSFET
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
ID
IC
VCE
tr
VDS
tf
Copyright Vincotech
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datasheet
Boost Switching Definitions
figure 28.
FWD
figure 29.
FWD
Turn-off Switching Waveforms & definition of ttrr
Turn-on Switching Waveforms & definition of tQrr (tQrr = integrating time for Qrr)
Qr
IF
IF
fitted
VF
figure 30.
FWD
Turn-on Switching Waveforms & definition of tErec (tErec = integrating time for Erec
)
%
Erec
tErec
Prec
3.01
3.1
3.19
3.28
3.37
3.46
t (µs)
Copyright Vincotech
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10-FZ06B2A060P701-PB53L73
datasheet
Ordering Code
Version
Ordering Code
Without thermal paste
10-FZ06B2A060P701-PB53L73
10-FZ06B2A060P701-PB53L73-/7/
10-FZ06B2A060P701-PB53L73-/3/
With thermal paste (5,2 W/mK, PTM6000HV)
With thermal paste (3,4 W/mK, PSX-P7)
Marking
Name
Date code
UL & VIN
Lot
Serial
Text
NN-NNNNNNNNNNNNNN-
TTTTTTVV
WWYY
UL VIN
LLLLL
SSSS
Type&Ver
Lot number
Serial
Date code
Datamatrix
TTTTTTTVV
LLLLL
SSSS
WWYY
Outline
Pin table [mm]
Pin
1
X
Y
22,3
22,3
22,3
22,3
22,3
22,3
22,3
22,3
3
Function
DC+1
DC+1
DC-1
0
2
3
3
12,15
15,15
18,15
21,15
30,3
33,3
33,3
33,3
0
4
DC-1
5
DC-2
6
DC-2
7
DC+2
DC+2
Boost2
Boost2
Boost1
Boost1
S25
8
9
10
11
12
13
14
15
16
17
18
0
3
0
0
9,15
12,15
15,15
18,15
33,3
33,3
0
0
G25
0
G27
0
S27
14,15
11,15
Therm1
Therm2
Copyright Vincotech
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datasheet
Pinout
DC+1
1,2
DC+2
7,8
D25
D27
Boost1
11,12
Boost2
9,10
C25
C27
T25
T27
G25
14
G27
15
S25
13
S27
16
Rt
3,4
5,6
DC-1
DC-2
Therm2
18
Therm1
17
Identification
Component
Voltage
Current
Function
Comment
ID
T25, T27
MOSFET
FWD
600 V
650 V
630 V
49 mΩ
20 A
Boost Switch
Boost Diode
Capacitor (DC)
Thermistor
D25, D27
C25, C27
Rt
Capacitor
Thermistor
Copyright Vincotech
18
14 Oct. 2021 / Revision 2
10-FZ06B2A060P701-PB53L73
datasheet
Packaging instruction
Handling instruction
Standard packaging quantity (SPQ) 135
>SPQ
Standard
<SPQ
Sample
Handling instructions for flow 0 packages see vincotech.com website.
Package data
Package data for flow 0 packages see vincotech.com website.
Vincotech thermistor reference
See Vincotech thermistor reference table at vincotech.com website.
UL recognition and file number
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.
Document No.:
Date:
Modification:
Pages
10-FZ06B2A060P701-PB53L73-D1-14
10-FZ06B2A060P701-PB53L73-D2-14
2 Jul. 2021
14 Oct. 2021
Correct Eoff trendline (figure9)
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine
the suitability of the information and the product for reader’s intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval
of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or effectiveness.
Copyright Vincotech
19
14 Oct. 2021 / Revision 2
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