10-FZ06PPA030SJ-LS54E08

datasheet

flowPIM 0 + PFC

600 V / 30 A

Features

flow 0 12 mm housing

● PIM with integrated PFC

● High switching frequency PFC circuit

● On-board capacitor

● New generation high speed IGBTs in the inverter

● Shunt resistor in the input stage

●

Integrated NTC

Schematic

Target applications

● Embedded Drives

● Industrial Drives

Types

● 10-FZ06PPA030SJ-LS54E08

Copyright Vincotech

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10 Jun. 2020 / Revision 1

10-FZ06PPA030SJ-LS54E08

datasheet

Maximum Ratings

T_j= 25 °C, unless otherwise specified

Parameter

Symbol

Conditions

Value

Unit

Inverter Switch

V_CES

Collector-emitter voltage

600

29

V

A

I_C

Collector current

T_j= T_jmax

T_s= 80 °C

T_j= 150 °C

I_CRM

Repetitive peak collector current

Total power dissipation

Gate-emitter voltage

t_plimited by T_jmax

T_j= T_jmax

90

A

P_tot

58

W

V

V_GES

±20

5

t_SC

Short circuit ratings

V_GE= 15 V, V_CC= 400 V

µs

°C

T_jmax

Maximum junction temperature

175

Inverter Diode

V_RRM

Peak repetitive reverse voltage

600

23

V

A

I_F

Continuous (direct) forward current

Repetitive peak forward current

Total power dissipation

T_j= T_jmax

T_s= 80 °C

I_FRM

t_plimited by T_jmax

T_j= T_jmax

40

A

P_tot

37

W

°C

T_jmax

Maximum junction temperature

175

PFC Switch

V_CES

Collector-emitter voltage

650

41

V

A

I_C

Collector current

T_j= T_jmax

T_s= 80 °C

I_CRM

Repetitive peak collector current

Total power dissipation

Gate-emitter voltage

t_plimited by T_jmax

T_j= T_jmax

150

78

A

P_tot

W

V

V_GES

±20

175

T_jmax

Maximum junction temperature

°C

Copyright Vincotech

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10 Jun. 2020 / Revision 1

10-FZ06PPA030SJ-LS54E08

datasheet

Maximum Ratings

T_j= 25 °C, unless otherwise specified

Parameter

Symbol

Conditions

Value

Unit

PFC Diode

V_RRM

Peak repetitive reverse voltage

650

62

V

A

I_F

Continuous (direct) forward current

Total power dissipation

T_j= T_jmax

T_s= 80 °C

P_tot

86

W

°C

T_jmax

Maximum junction temperature

175

PFC Sw. Protection Diode

V_RRM

Peak repetitive reverse voltage

650

8

V

A

I_F

Continuous (direct) forward current

Repetitive peak forward current

Total power dissipation

T_j= T_jmax

T_s= 80 °C

I_FRM

t_plimited by T_jmax

T_j= T_jmax

12

36

175

A

P_tot

W

°C

T_jmax

Maximum junction temperature

Shunt

I

DC current

T_c= 70 °C

31

4

A

P_tot

T_op

Power dissipation

W

°C

Operation Temperature

-65 ... 170

Capacitor (PFC)

V_MAX

Maximum DC voltage

630

V

T_op

Operation Temperature

-55 ... 150

°C

Copyright Vincotech

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datasheet

Maximum Ratings

T_j= 25 °C, unless otherwise specified

Parameter

Symbol

Conditions

Value

Unit

Module Properties

Thermal Properties

T_stg

T_jop

Storage temperature

-40…+125

°C

Operation temperature under switching

condition

-40…+(T_jmax- 25)

Isolation Properties

Isolation voltage

Creepage distance

Clearance

V_isol

DC Test Voltage*

t_p= 2 s

6000

2500

V

AC Voltage

t_p= 1 min

V

min. 12,7

8,63

mm

Comparative Tracking Index

*100 % tested in production

CTI

≥ 200

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datasheet

Characteristic Values

Symbol

Parameter

Conditions

Values

Typ

Unit

V_CE[V] I_C[A]

V_DS[V] I_D[A] T_j[°C]

V_GE[V]

V_GS[V]

Min

Max

V_F[V]

I_F[A]

Inverter Switch

Static

V_GE(th)

Gate-emitter threshold voltage

V_CE= V_GE

0,00048 25

25

4,1

5,1

5,7

V

1,73

1,97

2,01

1,8⁽¹⁾

V_CEsat

Collector-emitter saturation voltage

15

30

125

150

I_CES

I_GES

r_g

Collector-emitter cut-off current

Gate-emitter leakage current

Internal gate resistance

Input capacitance

0

600

0

25

1,6

µA

nA

Ω

20

25

100

None

1050

45

C_ies

C_oes

C_res

Q_g

pF

nC

Output capacitance

f = 1 Mhz

0

25

Reverse transfer capacitance

Gate charge

36

V_CC= 480 V

15

30

130

Thermal

λ_paste= 3,4 W/mK

(PSX)

(2)

R_th(j-s)

Thermal resistance junction to sink

Dynamic

1,63

K/W

25

37

38

t_d(on)

Turn-on delay time

Rise time

125

150

25

ns

38

12

t_r

125

150

25

13

15

R_gon= 8 Ω

R_goff= 8 Ω

90

t_d(off)

Turn-off delay time

Fall time

125

150

25

109

113

12

ns

±15

350

30

t_f

125

150

25

19,35

23,06

0,758

0,981

1,04

0,233

0,422

0,469

ns

Q_rFWD=0,812 µC

Q_rFWD=1,81 µC

Q_rFWD=2,02 µC

E_on

Turn-on energy (per pulse)

Turn-off energy (per pulse)

125

150

25

mWs

E_off

125

150

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datasheet

Characteristic Values

Symbol

Parameter

Conditions

Values

Typ

Unit

V_CE[V] I_C[A]

V_DS[V] I_D[A] T_j[°C]

V_GE[V]

V_GS[V]

Min

Max

V_F[V]

I_F[A]

Inverter Diode

Static

25

1,25

1,71

1,58

1,95⁽¹⁾

27

V_F

I_R

Forward voltage

20

V

125

Reverse leakage current

V_r= 600 V

25

µA

Thermal

λ_paste= 3,4 W/mK

(PSX)

(2)

R_th(j-s)

Thermal resistance junction to sink

Dynamic

2,6

K/W

25

7,86

12,39

13,22

200,95

276,23

327,76

0,812

1,81

I_RRM

Peak recovery current

125

150

25

A

t_rr

Reverse recovery time

125

150

25

ns

di/dt=500 A/µs

di/dt=1295 A/µs

di/dt=1294 A/µs

Q_r

Recovered charge

±15

350

30

125

150

25

μC

2,02

0,161

0,388

0,431

53,57

61,27

82,45

E_rec

Reverse recovered energy

Peak rate of fall of recovery current

125

150

25

mWs

A/µs

(di_rf/dt)_max

125

150

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datasheet

Characteristic Values

Symbol

Parameter

Conditions

Values

Typ

Unit

V_CE[V] I_C[A]

V_DS[V] I_D[A] T_j[°C]

V_GE[V]

V_GS[V]

Min

Max

V_F[V]

I_F[A]

PFC Switch

Static

V_GE(th)

V_CEsat

I_CES

I_GES

r_g

Gate-emitter threshold voltage

Collector-emitter saturation voltage

Collector-emitter cut-off current

Gate-emitter leakage current

Internal gate resistance

Input capacitance

V_CE= V_GE

0,0005

50

25

3,3

4

4,7

V

25

1,83

2,01

2,22⁽¹⁾

15

0

V

125

650

0

25

40

µA

nA

Ω

20

120

None

3000

11

C_ies

C_res

Q_g

pF

nC

f = 1 Mhz

0

25

Reverse transfer capacitance

Gate charge

15

520

50

120

Thermal

λ_paste= 3,4 W/mK

(PSX)

(2)

R_th(j-s)

Thermal resistance junction to sink

Dynamic

1,22

K/W

25

64,32

65,28

66,24

11,52

13,12

13,44

65,28

81,28

84,48

6,5

t_d(on)

Turn-on delay time

Rise time

125

150

25

ns

t_r

125

150

25

R_gon= 8 Ω

R_goff= 8 Ω

t_d(off)

Turn-off delay time

Fall time

125

150

25

ns

±15

400

50

t_f

125

150

25

11,86

14,8

ns

Q_rFWD=1,11 µC

Q_rFWD=3,25 µC

Q_rFWD=4,17 µC

0,908

1,42

E_on

Turn-on energy (per pulse)

Turn-off energy (per pulse)

125

150

25

mWs

1,58

0,324

0,511

0,565

E_off

125

150

Copyright Vincotech

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datasheet

Characteristic Values

Symbol

Parameter

Conditions

Values

Typ

Unit

V_CE[V] I_C[A]

V_DS[V] I_D[A] T_j[°C]

V_GE[V]

V_GS[V]

Min

Max

V_F[V]

I_F[A]

PFC Diode

Static

25

1,79

1,52

1,48

1,65⁽¹⁾

V_F

I_R

Forward voltage

70

125

150

V

Reverse leakage current

Thermal

V_r= 650 V

25

15

µA

λ_paste= 3,4 W/mK

(PSX)

(2)

R_th(j-s)

Thermal resistance junction to sink

Dynamic

1,11

K/W

25

41,31

77,54

90,69

63,02

77,21

86,22

1,11

I_RRM

Peak recovery current

125

150

25

A

t_rr

Reverse recovery time

125

150

25

ns

di/dt=3081 A/µs

di/dt=3116 A/µs

di/dt=3099 A/µs

Q_r

Recovered charge

±15

400

50

125

150

25

3,25

μC

4,17

0,227

0,715

0,954

2590

2053

2349

E_rec

Reverse recovered energy

Peak rate of fall of recovery current

125

150

25

mWs

A/µs

(di_rf/dt)_max

125

150

Copyright Vincotech

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datasheet

Characteristic Values

Symbol

Parameter

Conditions

Values

Typ

Unit

V_CE[V] I_C[A]

V_DS[V] I_D[A] T_j[°C]

V_F[V] I_F[A]

V_GE[V]

V_GS[V]

Min

Max

PFC Sw. Protection Diode

Static

25

1,23

1,72

1,58

1,53

1,87⁽¹⁾

V_F

I_R

Forward voltage

6

125

150

V

Reverse leakage current

Thermal

V_r= 650 V

25

0,1

µA

λ_paste= 3,4 W/mK

(PSX)

(2)

R_th(j-s)

Thermal resistance junction to sink

2,65

K/W

Shunt

Static

R

Resistance

1

mΩ

Temperature coeficient

tc

275

ppm/K

Capacitor (PFC)

Static

C

Capacitance

Tolerance

33

nF

%

-5

5

Copyright Vincotech

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datasheet

Characteristic Values

Symbol

Parameter

Conditions

Values

Typ

Unit

V_CE[V] I_C[A]

V_DS[V] I_D[A] T_j[°C]

V_F[V] I_F[A]

V_GE[V]

V_GS[V]

Min

Max

Thermistor

Static

R

Δ_R/R

P

Rated resistance

Deviation of R₁₀₀

Power dissipation

Power dissipation constant

B-value

25

22

kΩ

%

R₁₀₀= 1484 Ω

100

-5

5

mW

mW/K

K

d

25

1,5

B_(25/50)

Tol. ±1 %

3962

4000

B_(25/100)

B-value

K

Vincotech Thermistor Reference

I

(1)

Value at chip level

(2)

Only valid with pre-applied Vincotech thermal interface material.

Copyright Vincotech

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datasheet

Inverter Switch Characteristics

figure 1.

IGBT

figure 2.

IGBT

Typical output characteristics

I_C= f(V_CE

)

I_C= f(V_CE)

80

V_GE

:

7 V

8 V

9 V

10 V

11 V

12 V

13 V

14 V

15 V

16 V

17 V

60

40

20

60

40

20

0

1

2

3

4

5

1

2

3

4

5

V

_CE(V)

V_CE(V)

t_p

=

t_p

=

250

15

μs

V

250

150

μs

°C

25 °C

V_GE

T_j=

125 °C

150 °C

T_j:

V_GEfrom 7 V to 17 V in steps of 1 V

figure 3.

IGBT

figure 4.

IGBT

Typical transfer characteristics

Transient thermal impedance as a function of pulse width

I_C= f(V_GE

)

Z_th(j-s)= f(t_p)

1

30

10

25

20

15

10

5

0

10

-1

10

0,5

0,2

0,1

-2

10

0,05

0,02

0,01

0,005

0

-3

0

10

-5

-4

10

-3

10

-2

10

-1

10

0

10

1

10

2

4

6

8

10

t_p(s)

V

_GE(V)

t_p

V_CE

=

250

10

μs

V

D =

t_p/ T

1,627

25 °C

125 °C

150 °C

R_th(j-s)=

T_j:

K/W

IGBT thermal model values

R (K/W)

τ (s)

1,74E-01

8,46E-01

3,30E-01

1,44E-01

1,34E-01

4,59E-01

6,72E-02

1,48E-02

2,55E-03

2,64E-04

Copyright Vincotech

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datasheet

Inverter Switch Characteristics

figure 5.

IGBT

Safe operating area

I_C= f(V_CE

)

100

10µs

10

1

100µs

1ms

10ms

100ms

DC

0,1

0,01

1

10

100

1000

10000

V

_CE(V)

D =

single pulse

T_s=

80

15

°C

V

V_GE

=

T_j=

T_jmax

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datasheet

Inverter Diode Characteristics

figure 6.

FWD

figure 7.

FWD

Typical forward characteristics

Transient thermal impedance as a function of pulse width

I_F= f(V_F)

Z_th(j-s)= f(t_p)

1

60

50

40

30

20

10

0

10

0

10

-1

10

0,5

0,2

0,1

-2

10

0,05

0,02

0,01

0,005

0

-3

10

-5

-4

10

-3

10

-2

10

-1

10

0

1

2

0,0

0,5

1,0

1,5

2,0

2,5

3,0

10

t_p(s)

V_F(V)

t_p

=

250

μs

D =

t_p/ T

2,598

25 °C

T_j:

125 °C

R_th(j-s)=

K/W

FWD thermal model values

R (K/W)

τ (s)

6,56E-02

1,58E-01

8,97E-01

1,05E+00

2,75E-01

1,51E-01

4,59E+00

5,68E-01

8,41E-02

3,28E-02

4,96E-03

7,65E-04

Copyright Vincotech

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datasheet

PFC Switch Characteristics

figure 8.

IGBT

figure 9.

IGBT

Typical output characteristics

I_C= f(V_CE

)

I_C= f(V_CE)

150

V_GE

:

8 V

9 V

125

100

75

50

25

0

125

100

75

50

25

0

10 V

11 V

12 V

13 V

14 V

15 V

16 V

17 V

18 V

0,0

0,5

1,0

1,5

2,0

2,5

3,0

3,5

4,0

0,0

0,5

1,0

1,5

2,0

2,5

3,0

3,5

4,0

V

_CE(V)

V_CE(V)

t_p

=

t_p

=

250

15

μs

V

250

125

μs

°C

25 °C

T_j:

V_GE

=

T_j=

125 °C

V_GEfrom 8 V to 18 V in steps of 1 V

figure 10.

IGBT

figure 11.

IGBT

Typical transfer characteristics

Transient thermal impedance as a function of pulse width

I_C= f(V_GE

)

Z_th(j-s)= f(t_p)

1

50

10

40

30

20

10

0

10

-1

10

0,5

0,2

0,1

-2

10

0,05

0,02

0,01

0,005

0

-3

0

10

-5

-4

10

-3

10

-2

10

-1

10

0

10

1

10

2

1

2

3

4

5

6

7

10

t_p(s)

V

_GE(V)

t_p

V_CE

=

250

10

μs

D =

t_p/ T

1,222

25 °C

T_j:

V

125 °C

R_th(j-s)=

K/W

IGBT thermal model values

R (K/W)

τ (s)

1,28E-01

4,40E-01

3,96E-01

1,75E-01

3,44E-02

4,80E-02

8,75E-01

1,12E-01

3,56E-02

7,55E-03

1,97E-03

4,33E-04

Copyright Vincotech

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datasheet

PFC Switch Characteristics

figure 12.

IGBT

Safe operating area

I_C= f(V_CE

)

1000

100

10

1

0,1

0,01

1

10

100

1000

10000

V

_CE(V)

D =

single pulse

T_s=

80

15

°C

V

V_GE

=

T_j=

T_jmax

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PFC Diode Characteristics

figure 13.

FWD

figure 14.

FWD

Typical forward characteristics

Transient thermal impedance as a function of pulse width

I_F= f(V_F)

Z_th(j-s)= f(t_p)

1

200

150

100

50

10

0

10

-1

10

-2

10

0,5

0,2

0,1

-3

0,05

0,02

0,01

0,005

0

10

-4

0

0,0

10

-5

-4

10

-3

10

-2

10

-1

10

0

1

2

0,5

1,0

1,5

2,0

2,5

3,0

10

t_p(s)

V_F(V)

t_p

=

250

μs

D =

t_p/ T

1,107

25 °C

125 °C

150 °C

R_th(j-s)=

T_j:

K/W

FWD thermal model values

R (K/W)

τ (s)

8,97E-02

2,36E-01

5,62E-01

1,48E-01

6,99E-02

2,23E+00

2,84E-01

6,41E-02

6,95E-03

1,04E-03

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datasheet

PFC Sw. Protection Diode Characteristics

figure 15.

FWD

figure 16.

FWD

Typical forward characteristics

Transient thermal impedance as a function of pulse width

I_F= f(V_F)

Z_th(j-s)= f(t_p)

1

17,5

15,0

12,5

10,0

7,5

10

0

10

-1

10

0,5

0,2

0,1

5,0

-2

10

0,05

0,02

0,01

0,005

0

2,5

-3

0,0

10

-5

-4

10

-3

10

-2

10

-1

10

0

1

2

0,5

1,0

1,5

2,0

2,5

3,0

10

t_p(s)

V_F(V)

t_p

=

250

μs

D =

t_p/ T

2,646

25 °C

125 °C

150 °C

R_th(j-s)=

T_j:

K/W

FWD thermal model values

R (K/W)

τ (s)

1,02E-01

3,50E-01

9,53E-01

7,66E-01

4,76E-01

2,56E+00

1,72E-01

3,96E-02

5,83E-03

9,87E-04

Copyright Vincotech

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Thermistor Characteristics

figure 17.

Thermistor

Typical NTC characteristic as function of temperature

R_T= f(T)

25000

20000

15000

10000

5000

0

20

40

60

80

100

120

140

T(°C)

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datasheet

Inverter Switching Characteristics

figure 18.

IGBT

figure 19.

IGBT

Typical switching energy losses as a function of collector current

Typical switching energy losses as a function of gate resistor

E = f(I_C)

E = f(R_g)

2,5

2,0

1,5

1,0

0,5

0,0

2,00

1,75

1,50

1,25

1,00

0,75

0,50

0,25

0,00

E_on

E_off

0

10

20

30

40

50

60

I_C(A)

0

5

10

15

20

25

30

35

R_g(Ω)

With an inductive load at

25 °C

V_CE

V_GE

=

V_CE

V_GE

I_C

=

350

±15

8

V

Ω

125 °C

150 °C

350

±15

30

V

A

125 °C

150 °C

T_j:

R_gon

R_goff

8

figure 20.

FWD

figure 21.

FWD

Typical reverse recovered energy loss as a function of collector current

Typical reverse recovered energy loss as a function of gate resistor

E_rec= f(I_C)

E_rec= f(R_g)

0,7

0,6

0,5

0,4

0,3

0,2

0,1

0,0

0,6

0,5

0,4

0,3

0,2

0,1

0,0

E_rec

0

10

20

30

40

50

60

0

5

10

15

20

25

30

35

I_C(A)

R_g(Ω)

With an inductive load at

25 °C

V_CE

V_GE

R_gon

=

V_CE

V_GE

I_C

=

350

±15

8

V

Ω

125 °C

150 °C

350

±15

30

V

125 °C

150 °C

T_j:

V

A

Copyright Vincotech

19

10 Jun. 2020 / Revision 1

10-FZ06PPA030SJ-LS54E08

datasheet

Inverter Switching Characteristics

figure 22.

IGBT

figure 23.

IGBT

Typical switching times as a function of collector current

Typical switching times as a function of gate resistor

t = f(I_C)

t = f(R_g)

0

10

0

10

t_d(off)

t_d(on)

t_r

-1

10

-2

10

-3

10

t_d(off)

-1

10

-2

10

-3

10

t_d(on)

t_r

t_f

0

10

20

30

40

50

60

0

5

10

15

20

25

30

35

R_g(Ω)

I_C(A)

With an inductive load at

T_j=

150

350

±15

8

°C

V

150

350

±15

30

°C

V_CE

=

V_CE

=

V

A

V_GE

R_gon

R_goff

V_GE

I_C

V

Ω

8

figure 24.

FWD

figure 25.

FWD

Typical reverse recovery time as a function of collector current

Typical reverse recovery time as a function of IGBT turn on gate resistor

t_rr= f(I_C)

t_rr= f(R_gon)

0,45

0,40

0,35

0,30

0,25

0,20

0,15

0,10

0,05

0,00

0,7

0,6

0,5

0,4

0,3

0,2

0,1

0,0

t_rr

0

10

20

30

40

50

60

0

5

10

15

20

25

30

35

I_C(A)

R_gon(Ω)

With an inductive load at

25 °C

V_CE

V_GE

R_gon

=

V_CE

V_GE

I_C

=

350

±15

8

V

Ω

125 °C

150 °C

350

±15

30

V

125 °C

150 °C

T_j:

V

A

Copyright Vincotech

20

10 Jun. 2020 / Revision 1

10-FZ06PPA030SJ-LS54E08

datasheet

Inverter Switching Characteristics

figure 26.

FWD

figure 27.

FWD

Typical recovered charge as a function of collector current

Typical recovered charge as a function of turn on gate resistor

Q_r= f(I_C)

Q_r= f(R_gon)

3,5

3,0

2,5

2,0

1,5

1,0

0,5

0,0

3,0

2,5

2,0

1,5

1,0

0,5

0,0

Q_r

0

10

20

30

40

50

60

0

5

10

15

20

25

30

35

I_C(A)

R_gon(Ω)

With an inductive load at

25 °C

V_CE

V_GE

R_gon

=

V_CE

V_GE

I_C

=

350

±15

8

V

Ω

125 °C

150 °C

350

±15

30

V

125 °C

150 °C

T_j:

V

A

figure 28.

FWD

figure 29.

FWD

Typical peak reverse recovery current as a function of collector current

Typical peak reverse recovery current as a function of turn on gate resistor

I_RM= f(I_C)

I_RM= f(R_gon)

20,0

17,5

15,0

12,5

10,0

7,5

40

35

30

25

20

15

10

5

I_RM

5,0

I_RM

2,5

0,0

0

10

20

30

40

50

60

0

5

10

15

20

25

30

35

I_C(A)

R_gon(Ω)

With an inductive load at

25 °C

V_CE

V_GE

R_gon

=

V_CE

V_GE

I_C

=

350

±15

8

V

Ω

125 °C

150 °C

350

±15

30

V

125 °C

150 °C

T_j:

V

A

Copyright Vincotech

21

10 Jun. 2020 / Revision 1

10-FZ06PPA030SJ-LS54E08

datasheet

Inverter Switching Characteristics

figure 30.

FWD

figure 31.

FWD

Typical rate of fall of forward and reverse recovery current as a function of collector current

Typical rate of fall of forward and reverse recovery current as a function of turn on gate resistor

di_F/dt, di_rr/dt = f(I_C)

di_F/dt, di_rr/dt = f(R_gon)

6000

5000

4000

3000

2000

1000

0

di_F/dt ‒ ‒ ‒ ‒ ‒

di_rr/dt ──────

5000

4000

3000

2000

1000

0

10

20

30

40

50

60

I_C(A)

0

5

10

15

20

25

30

35

R

_gon(Ω)

With an inductive load at

25 °C

V_CE

V_GE

R_gon

=

V_CE

V_GE

I_C

=

350

±15

8

V

Ω

125 °C

150 °C

350

±15

30

V

A

125 °C

150 °C

T_j:

figure 32.

IGBT

Reverse bias safe operating area

I_C= f(V_CE

)

70

I_{C MAX}

60

50

40

30

20

10

0

100

200

300

400

500

600

700

V

_CE(V)

T_j=

At

150

8

°C

Ω

R_gon

R_goff

=

8

Ω

Copyright Vincotech

22

10 Jun. 2020 / Revision 1

10-FZ06PPA030SJ-LS54E08

datasheet

PFC Switching Characteristics

figure 33.

IGBT

figure 34.

IGBT

Typical switching energy losses as a function of collector current

Typical switching energy losses as a function of gate resistor

E = f(I_C)

E = f(R_g)

3,0

2,5

2,0

1,5

1,0

0,5

0,0

3,0

2,5

2,0

1,5

1,0

0,5

0,0

E_on

E_off

0

20

40

60

80

100

I_C(A)

0

5

10

15

20

25

30

35

R_g(Ω)

With an inductive load at

25 °C

V_CE

V_GE

=

V_CE

V_GE

I_C

=

400

±15

8

V

Ω

125 °C

150 °C

400

±15

50

V

125 °C

150 °C

T_j:

V

A

R_gon

R_goff

8

figure 35.

FWD

figure 36.

FWD

Typical reverse recovered energy loss as a function of collector current

Typical reverse recovered energy loss as a function of gate resistor

E_rec= f(I_C)

E_rec= f(R_g)

1,75

1,50

1,25

1,00

0,75

0,50

0,25

0,00

1,50

1,25

1,00

0,75

0,50

0,25

0,00

E_rec

0

20

40

60

80

100

0

5

10

15

20

25

30

35

I_C(A)

R_g(Ω)

With an inductive load at

25 °C

V_CE

V_GE

R_gon

=

V_CE

V_GE

I_C

=

400

±15

8

V

Ω

125 °C

150 °C

400

±15

50

V

A

125 °C

150 °C

T_j:

Copyright Vincotech

23

10 Jun. 2020 / Revision 1

10-FZ06PPA030SJ-LS54E08

datasheet

PFC Switching Characteristics

figure 37.

IGBT

figure 38.

IGBT

Typical switching times as a function of collector current

Typical switching times as a function of gate resistor

t = f(I_C)

t = f(R_g)

0

10

0

10

t_d(on)

t_d(off)

-1

10

-1

10

t_d(off)

t_d(on)

t_r

t_f

t_r

t_f

-2

10

-2

10

-3

10

-3

10

0

20

40

60

80

100

I_C(A)

0

5

10

15

20

25

30

35

R_g(Ω)

With an inductive load at

T_j=

150

400

±15

8

°C

V

150

400

±15

50

°C

V_CE

=

V_CE

=

V

A

V_GE

R_gon

R_goff

V_GE

I_C

V

Ω

8

figure 39.

FWD

figure 40.

FWD

Typical reverse recovery time as a function of collector current

Typical reverse recovery time as a function of IGBT turn on gate resistor

t_rr= f(I_C)

t_rr= f(R_gon)

0,12

0,10

0,08

0,06

0,04

0,02

0,00

0,150

0,125

0,100

0,075

0,050

0,025

0,000

t_rr

0

20

40

60

80

100

0

5

10

15

20

25

30

35

I_C(A)

R_gon(Ω)

With an inductive load at

25 °C

V_CE

V_GE

R_gon

=

V_CE

V_GE

I_C

=

400

±15

8

V

Ω

125 °C

150 °C

400

±15

50

V

A

125 °C

150 °C

T_j:

Copyright Vincotech

24

10 Jun. 2020 / Revision 1

10-FZ06PPA030SJ-LS54E08

datasheet

PFC Switching Characteristics

figure 41.

FWD

figure 42.

FWD

Typical recovered charge as a function of collector current

Typical recovered charge as a function of turn on gate resistor

Q_r= f(I_C)

Q_r= f(R_gon)

7

6

5

4

3

2

1

0

6

5

4

3

2

1

0

Q_r

0

20

40

60

80

100

0

5

10

15

20

25

30

35

I_C(A)

R_gon(Ω)

With an inductive load at

25 °C

V_CE

V_GE

R_gon

=

V_CE

V_GE

I_C

=

400

±15

8

V

Ω

125 °C

150 °C

400

±15

50

V

125 °C

150 °C

T_j:

V

A

figure 43.

FWD

figure 44.

FWD

Typical peak reverse recovery current as a function of collector current

Typical peak reverse recovery current as a function of turn on gate resistor

I_RM= f(I_C)

I_RM= f(R_gon)

150

125

100

75

150

125

100

75

I_RM

50

I_RM

25

I_RM

0

20

40

60

80

100

0

5

10

15

20

25

30

35

I_C(A)

R_gon(Ω)

With an inductive load at

25 °C

V_CE

V_GE

R_gon

=

V_CE

V_GE

I_C

=

400

±15

8

V

Ω

125 °C

150 °C

400

±15

50

V

A

125 °C

150 °C

T_j:

Copyright Vincotech

25

10 Jun. 2020 / Revision 1

10-FZ06PPA030SJ-LS54E08

datasheet

PFC Switching Characteristics

figure 45.

FWD

figure 46.

FWD

Typical rate of fall of forward and reverse recovery current as a function of collector current

Typical rate of fall of forward and reverse recovery current as a function of turn on gate resistor

di_F/dt, di_rr/dt = f(I_C)

di_F/dt, di_rr/dt = f(R_gon)

7000

6000

5000

4000

3000

2000

1000

0

di_F/dt ‒ ‒ ‒ ‒ ‒

di_rr/dt ──────

6000

5000

4000

3000

2000

1000

0

20

40

60

80

100

I_C(A)

0

5

10

15

20

25

30

35

R

_gon(Ω)

With an inductive load at

25 °C

V_CE

V_GE

R_gon

=

V_CE

V_GE

I_C

=

400

±15

8

V

Ω

125 °C

150 °C

400

±15

50

V

A

125 °C

150 °C

T_j:

figure 47.

IGBT

Reverse bias safe operating area

I_C= f(V_CE

)

120

I_{C MAX}

100

80

60

40

20

0

100

200

300

400

500

600

700

800

V

_CE(V)

T_j=

At

150

8

°C

Ω

R_gon

R_goff

=

8

Ω

Copyright Vincotech

26

10 Jun. 2020 / Revision 1

10-FZ06PPA030SJ-LS54E08

datasheet

Switching Definitions

figure 48.

IGBT

figure 49.

IGBT

Turn-off Switching Waveforms & definition of t_doff, t_Eoff(t_tEoff= integrating time for E_off

)

Turn-on Switching Waveforms & definition of t_don, t_Eon(t_Eon= integrating time for E_on)

t_doff

%

V_{GE 90%}

V_{CE 90%}

I_C

V_GE

V_CE

t_don

t_Eoff

I_{C 1%}

V_{CE 3%}

V_CE

I_{C 10%}

V_{GE 10%}

t_Eon

t (µs)

figure 50.

IGBT

figure 51.

IGBT

Turn-off Switching Waveforms & definition of t_f

Turn-on Switching Waveforms & definition of t_r

fitted

%

I_C

%

I_{C 90%}

I_C

I_{C 60%}

V_CE

I_{C 40%}

I_{C 90%}

t_r

I_C10%

V_CE

C 10%

t_f

t (µs)

Copyright Vincotech

27

10 Jun. 2020 / Revision 1

10-FZ06PPA030SJ-LS54E08

datasheet

Switching Definitions

figure 52.

FWD

figure 53.

FWD

Turn-off Switching Waveforms & definition of t_rr

Turn-on Switching Waveforms & definition of t_Qr(t_Qr= integrating time for Q_r)

%

Q_r

%

t_Qr

t_rr

I_F

fitted

RRM 10%

V_F

RRM 90%

RRM 100%

t (µs)

Copyright Vincotech

28

10 Jun. 2020 / Revision 1

10-FZ06PPA030SJ-LS54E08

datasheet

Ordering Code

Marking

Version

Ordering Code

Without thermal paste

With thermal paste

10-FZ06PPA030SJ-LS54E08

10-FZ06PPA030SJ-LS54E08-/3/

Name

Date code

UL & VIN

Lot

Serial

Text

NN-NNNNNNNNNNNNNN-

TTTTTTVV

WWYY

UL VIN

LLLLL

SSSS

Type&Ver

Lot number

Serial

Date code

Datamatrix

TTTTTTTVV

LLLLL

SSSS

WWYY

Outline

Pin table [mm]

1

X

Y

Function

G12

33,5

26

2,7

0

2

Ph1

3

2,7

0

G14

4

26

Ph2

5

18,5

10,7

11,1

0

2,7

0

G16

6

Ph3

7

0

DC+Inv

Therm1

Therm2

PFC

8

11,2

8,5

0

9

10

11

12

13

14

15

16

17

18

19

20

21

22

23

0

8,5

17,1

19,8

22,5

DC+PFC

S1sh1

S2sh1

DC-Rect

DC-PFC

S27

0

11

14,6

17,3

20

G27

G15

22,7

25,4

28,1

30,8

33,5

DC-3

G13

DC-2

G11

DC-1

Copyright Vincotech

29

10 Jun. 2020 / Revision 1

10-FZ06PPA030SJ-LS54E08

datasheet

Pinout

Identification

Component

Voltage

Current

Function

Comment

ID

T11, T12, T13, T14,

IGBT

600 V

30 A

Inverter Switch

Inverter Diode

T15, T16

D11, D12, D13, D14,

FWD

600 V

20 A

D15, D16

T27

IGBT

FWD

650 V

50 A

70 A

6 A

PFC Switch

PFC Diode

D27

D47

FWD

PFC Sw. Protection Diode

Shunt

SH1

C27

Shunt

Capacitor

Thermistor

630 V

Capacitor (PFC)

Thermistor

Rt

Copyright Vincotech

30

10 Jun. 2020 / Revision 1

10-FZ06PPA030SJ-LS54E08

datasheet

Packaging instruction

Handling instruction

Standard packaging quantity (SPQ) 135

>SPQ

Standard

<SPQ

Sample

Handling instructions for flow 0 packages see vincotech.com website.

Package data

Package data for flow 0 packages see vincotech.com website.

UL recognition and file number

This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.

Document No.:

Date:

Modification:

Pages

10-FZ06PPA030SJ-LS54E08-D1-14

10 Jun. 2020

DISCLAIMER

The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to

reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations

that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,

function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said

information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons

or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine

the suitability of the information and the product for reader’s intended use.

LIFE SUPPORT POLICY

Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval

of Vincotech.

As used herein:

1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or

sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be

reasonably expected to result in significant injury to the user.

2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause

the failure of the life support device or system, or to affect its safety or effectiveness.

Copyright Vincotech

31

10 Jun. 2020 / Revision 1


型号：	10-FZ06PPA030SJ-LS54E08
厂家：	VINCOTECH
描述：	5us short circuit withstand time;High speed switching;Low EMI;Short tail current
文件：	总31页 (文件大小：9106K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

10-FZ06PPA030SJ-LS54E08 [VINCOTECH]

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