10-FZ071SA050SM02-L524L18 [VINCOTECH]
High efficiency in hard switching and resonant topologies;High speed switching;Low gate charge;
| 型号： | 10-FZ071SA050SM02-L524L18 |
| 厂家： | 
VINCOTECH |
| 描述： | High efficiency in hard switching and resonant topologies;High speed switching;Low gate charge |
| 文件： | 总20页 (文件大小：1764K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
10ꢀFZ071SA050SM02ꢀL524L18
datasheet
flowSꢀPFC 0
650 V / 50 A
Features
flow 0 12mm housing
● Ultra fast IGBT and recovery boost diodes
● Integrated capacitor
● Temperature sensor
Schematic
Target applications
● Grid connected motor drive
● UPS
● Battery charger
Types
● 10ꢀFZ071SA050SM02ꢀL524L18
Maximum Ratings
T
j
= 25 °C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Boost Switch
VCES
IC
ICRM
Ptot
VGES
Tjmax
Collectorꢀemitter voltage
650
43
V
A
Collector current
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
Repetitive peak collector current
Total power dissipation
Gateꢀemitter voltage
tp limited by Tjmax
Tj = Tjmax
150
84
A
W
V
±20
175
Maximum Junction Temperature
°C
Copyright Vincotech
1
12 Jul. 2016 / Revision 1
10ꢀFZ071SA050SM02ꢀL524L18
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Boost Diode
VRRM
IF
IFRM
Ptot
Peak repetitive reverse voltage
650
49
V
A
Continuous (direct) forward current
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
100
68
A
Tj = Tjmax
W
°C
Tjmax
Maximum junction temperature
175
Boost Sw. Protection Diode
VRRM
Peak Repetitive Reverse Voltage
Continuous (direct) forward current
Total power dissipation
650
17
V
A
IF
Tj = Tjmax
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
Ptot
33
W
°C
Tjmax
Maximum Junction Temperature
175
Rectifier Diode
VRRM
IF
IFSM
I2t
Ptot
Tjmax
Peak Repetitive Reverse Voltage
1600
46
V
A
Continuous (direct) forward current
Surge (nonꢀrepetitive) forward current
Surge current capability
Tj = Tjmax
Ts = 80 °C
Tj = 150 °C
Ts = 80 °C
270
370
56
A
50 Hz Single Half Sine Wave
tp = 10 ms
A2s
W
°C
Total power dissipation
Tj = Tjmax
Maximum Junction Temperature
150
DC Link Capacitance
VMAX
Top
Maximum DC voltage
630
V
Operation Temperature
ꢀ55…+125
°C
Copyright Vincotech
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12 Jul. 2016 / Revision 1
10ꢀFZ071SA050SM02ꢀL524L18
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Module Properties
Thermal Properties
Tstg
Tjop
Storage temperature
ꢀ40…+125
°C
°C
Operation temperature under switching condition
Isolation Properties
Isolation voltage
ꢀ40…(Tjmax ꢀ 25)
Visol
DC Test Voltage
tp = 2 s
4000
min. 12,7
9,75
V
Creepage distance
mm
mm
Clearance
Comparative Tracking Index
CTI
> 200
Copyright Vincotech
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12 Jul. 2016 / Revision 1
10ꢀFZ071SA050SM02ꢀL524L18
datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
Boost Switch
Static
VGE(th)
VCEsat
ICES
IGES
rg
Gateꢀemitter threshold voltage
Collectorꢀemitter saturation voltage
Collectorꢀemitter cutꢀoff current
Gateꢀemitter leakage current
Internal gate resistance
Input capacitance
VGE = VCE
0,0005 25
3,3
4
4,7
V
V
25
1,82
2,00
2,22
15
0
50
125
650
0
25
25
40
µA
nA
ꢁ
20
120
none
3000
50
Cies
Coes
Cres
Qg
Output capacitance
f = 1 MHz
0
25
25
25
pF
Reverse transfer capacitance
Gate charge
11
15
520
50
120
nC
Thermal
phaseꢀchange
material
λ = 3,4 W/mK
Rth(j-s)
Thermal resistance junction to sink
1,13
K/W
Dynamic
25
35
36
36
td(on)
125
150
25
Turnꢀon delay time
9
tr
Rise time
125
150
25
11
11
97
Rgoff = 8 ꢁ
Rgon = 8 ꢁ
ns
td(off)
Turnꢀoff delay time
Fall time
125
150
25
125
150
25
125
150
25
125
150
109
117
4
7
9
1,028
1,159
1,278
0,238
0,394
0,437
ꢀ5 / 15
350
50
tf
Qr
FWD
Qr
FWD
Qr
FWD
= 1,8 ꢂC
= 3,3 ꢂC
= 3,8 ꢂC
Eon
Turnꢀon energy (per pulse)
Turnꢀoff energy (per pulse)
mWs
Eoff
Copyright Vincotech
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12 Jul. 2016 / Revision 1
10ꢀFZ071SA050SM02ꢀL524L18
datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
Boost Diode
Static
25
1,50
1,44
1,77
2,65
Forward voltage
Reverse leakage current
Thermal
VF
IR
50
V
125
650
25
µA
phaseꢀchange
material
λ = 3,4 W/mK
Rth(j-s)
Thermal resistance junction to sink
1,41
K/W
Dynamic
25
39
52
58
IRRM
Peak recovery current
125
150
25
A
86
trr
Qr
Reverse recovery time
125
150
25
125
150
25
125
150
25
125
150
109
121
ns
di/dt = 4061 A/ꢂs
di/dt = 5418 A/ꢂs ꢀ5 / 15
di/dt = 3990 A/ꢂs
1,787
3,294
3,823
0,346
0,699
0,831
301
350
50
Recovered charge
ꢂC
Erec
Reverse recovered energy
Peak rate of fall of recovery current
mWs
A/µs
(dirf/dt)max
451
472
Boost Sw. Protection Diode
Static
25
125
1,67
1,56
1,87
0,14
VF
Ir
Forward voltage
10
V
Reverse leakage current
650
25
µA
Thermal
phaseꢀchange
material
λ = 3,4 W/mK
Thermal resistance junction to sink
Rth(j-s)
2,87
K/W
Copyright Vincotech
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12 Jul. 2016 / Revision 1
10ꢀFZ071SA050SM02ꢀL524L18
datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
Rectifier Diode
Static
25
125
0,8
1,17
1,13
1,6
VF
Ir
Forward voltage
35
V
25
50
1100
Reverse leakage current
1600
145
µA
Thermal
phaseꢀchange
material
λ = 3,4 W/mK
Thermal resistance junction to sink
Rth(j-s)
1,25
150
K/W
DC Link Capacitance
Capacitance
C
nF
%
%
Tolerance
ꢀ10
+10
2,5
Dissipation factor
Climatic category
f = 1 kHz
25
55/125/56
22
Thermistor
Rated resistance
R
ΔR/R
P
25
100
25
25
25
25
kꢁ
%
Deviation of R100
Power dissipation
Power dissipation constant
Bꢀvalue
R100 = 1486 ꢁ
ꢀ5
5
5
mW
mW/K
K
1,5
B(25/50) Tol. ±1%
B(25/100) Tol. ±1%
3962
4000
Bꢀvalue
K
Vincotech NTC Reference
I
Copyright Vincotech
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12 Jul. 2016 / Revision 1
10ꢀFZ071SA050SM02ꢀL524L18
datasheet
Boost Switch Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical output characteristics
Typical output characteristics
IC = f(VCE
)
I C = f(VCE)
I
I
I
I
I
I
I
I
tp
=
250
15
ꢂs
V
25 °C
125 °C
tp
Tj
=
=
250
125
ꢂs
°C
VGE
=
Tj:
VGE from
8 V to 18 V in steps of 1 V
figure 3.
Typical transfer characteristics
IGBT
figure 4.
IGBT
Transient Thermal Impedance as function of Pulse duration
IC = f(VGE
)
Z th(j-s) = f(tp)
101
I
I
I
I
Z
Z
Z
Z
100
10ꢀ1
10ꢀ2
10ꢀ3
10ꢀ5
10ꢀ4
10ꢀ3
10ꢀ2
10ꢀ1
100
101
102
tp(s)
tp
=
100
10
ꢂs
V
25 °C
125 °C
D =
R th(j-s)
tp / T
VCE
=
Tj:
=
1,13
K/W
IGBT thermal model values
(K/W)
R
τ
(s)
7,12Eꢀ02
1,29Eꢀ01
4,31Eꢀ01
3,15Eꢀ01
1,31Eꢀ01
5,02Eꢀ02
8,15E+00
6,00Eꢀ01
9,13Eꢀ02
2,59Eꢀ02
5,80Eꢀ03
8,53Eꢀ04
Copyright Vincotech
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12 Jul. 2016 / Revision 1
10ꢀFZ071SA050SM02ꢀL524L18
datasheet
Boost Switch Characteristics
figure 5.
IGBT
Gate voltage vs Gate charge
VGE = f(Q G
)
V
V
V
V
At
IC=
50
A
Boost Diode Characteristics
figure 1.
FWD
figure 2.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Z th(j-s) = f(tp)
100
Z
Z
Z
Z
10ꢀ1
10ꢀ2
10ꢀ4
=
10ꢀ3
10ꢀ2
10ꢀ1
100
101
102
tp
=
250
ꢂs
25 °C
125 °C
150 °C
D =
R th(j-s)
tp / T
1,41
Tj:
K/W
FWD thermal model values
R (K/W)
τ
(s)
8,12Eꢀ02
1,48Eꢀ01
5,58Eꢀ01
3,75Eꢀ01
1,82Eꢀ01
6,20Eꢀ02
4,01E+00
6,15Eꢀ01
9,08Eꢀ02
2,92Eꢀ02
6,56Eꢀ03
1,34Eꢀ03
Copyright Vincotech
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12 Jul. 2016 / Revision 1
10ꢀFZ071SA050SM02ꢀL524L18
datasheet
Boost Sw. Protection Diode Characteristics
figure 1.
FWD
figure 2.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Z th(j-s) = f(tp)
101
Z
Z
Z
Z
100
D = 0,5
0,2
10ꢀ1
0,1
0,05
0,02
0,01
0,005
0.000
10ꢀ2
10ꢀ4
=
10ꢀ3
10ꢀ2
10ꢀ1
100
101
102
D =
R th(j-s)
tp
=
250
ꢂs
25 °C
125 °C
tp / T
2,87
T j:
K/W
FWD thermal model values
R
(K/W)
τ
(s)
6,5290E-02
1,4760E-01
1,3130E+00
7,3180E-01
4,0440E-01
2,1060E-01
3,9390E+00
4,4830E-01
5,9640E-02
1,3610E-02
2,7940E-03
5,3720E-04
Copyright Vincotech
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12 Jul. 2016 / Revision 1
10ꢀFZ071SA050SM02ꢀL524L18
datasheet
Rectifier Diode Characteristics
figure 1.
Rectifier Diode
figure 2.
Rectifier Diode
Typical forward characteristics
Transient thermal impedance as a function of pulse width
I F = f(VF)
Z th(j-s) = f(tp)
101
Z
Z
Z
Z
100
D = 0,5
0,2
10ꢀ1
0,1
0,05
0,02
0,01
0,005
0,000
10ꢀ2
10ꢀ5
10ꢀ4
10ꢀ3
10ꢀ2
10ꢀ1
100
101
D =
R th(j-s)
tp
=
250
ꢂs
25 °C
125 °C
tp / T
1,25
T j:
=
K/W
Diode thermal model values
R (K/W)
τ
(s)
8,0030Eꢀ02
1,5580Eꢀ01
6,9510Eꢀ01
2,2330Eꢀ01
9,9710Eꢀ02
5,2210E+00
4,1790Eꢀ01
8,8210Eꢀ02
3,0740Eꢀ02
5,9900Eꢀ03
Thermistor Characteristics
Typical Thermistor resistance values
figure 1.
Thermistor
Thermistor typical temperature characteristic
R = f(T)
Copyright Vincotech
10
12 Jul. 2016 / Revision 1
10ꢀFZ071SA050SM02ꢀL524L18
datasheet
Boost Switching Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of gate resistor
E = f(R g)
E = f(I C
)
E
E
E
E
E
E
E
E
25 °C
125 °C
150 °C
25 °C
125 °C
150 °C
With an inductive load at
With an inductive load at
350
V
V
ꢁ
ꢁ
T
j
:
VCE
VGE
I C
=
=
=
350
ꢀ5 / 15
50
V
V
A
Tj:
VCE
VGE
=
=
=
=
ꢀ5 / 15
8
8
R gon
R goff
figure 3.
FWD
figure 4.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of gate resistor
Erec = f(I c)
Erec = f(R g)
E
E
E
E
E
E
E
E
25 °C
125 °C
150 °C
25 °C
125 °C
150 °C
With an inductive load at
With an inductive load at
350
ꢀ5 / 15
8
V
V
ꢁ
:
350
ꢀ5 / 15
50
V
V
A
:
Tj
VCE
VGE
=
=
=
Tj
VCE
VGE
I C
=
=
=
R gon
Copyright Vincotech
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12 Jul. 2016 / Revision 1
10ꢀFZ071SA050SM02ꢀL524L18
datasheet
Boost Switching Characteristics
figure 5.
IGBT
figure 6.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of gate resistor
t = f(I C)
t = f(R g)
t
t
t
t
t
t
t
t
With an inductive load at
With an inductive load at
150
350
ꢀ5 / 15
8
°C
V
150
350
°C
V
Tj =
Tj =
VCE
=
=
=
=
VCE
=
=
=
VGE
R gon
R goff
V
VGE
I C
ꢀ5 / 15
50
V
ꢁ
ꢁ
A
8
figure 7.
FWD
figure 8.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn on gate resistor
t rr = f(I C
)
trr = f(R gon
)
t
t
t
t
t
t
t
t
At
VCE
=
350
ꢀ5 / 15
8
V
V
ꢁ
25 °C
125 °C
150 °C
At
VCE
=
350
V
V
A
25 °C
125 °C
150 °C
:
Tj
ꢀ5 / 15
50
:
Tj
VGE
R gon
=
=
VGE
I C
=
=
Copyright Vincotech
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12 Jul. 2016 / Revision 1
10ꢀFZ071SA050SM02ꢀL524L18
datasheet
Boost Switching Characteristics
figure 9.
FWD
figure 10.
FWD
Typical recovered charge as a function of collector current
Typical recoved charge as a function of IGBT turn on gate resistor
Q r = f(I C
)
Q r = f(R gon)
Q
Q
Q
Q
Q
Q
Q
Q
350
V
V
ꢁ
25 °C
125 °C
150 °C
350
ꢀ5 / 15
50
V
V
A
25 °C
125 °C
150 °C
At
VCE
VGE
R gon
=
At
VCE
VGE
I C
=
ꢀ5 / 15
8
:
Tj
=
:
Tj
=
=
=
figure 11.
FWD
figure 12.
FWD
Typical peak reverse recovery current current as a function of collector current
Typical peak reverse recovery current as a function of IGBT turn on gate resistor
I RM = f(I C
)
I RM = f(R gon
)
I
I
I I
I I
I
I
At
VCE
=
350
V
V
ꢁ
25 °C
125 °C
150 °C
At
VCE
=
350
ꢀ5 / 15
50
V
V
A
25 °C
125 °C
150 °C
ꢀ5 / 15
8
:
Tj
:
Tj
VGE
=
=
VGE
I C
=
R gon
=
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12 Jul. 2016 / Revision 1
10ꢀFZ071SA050SM02ꢀL524L18
datasheet
Boost Switching Characteristics
figure 13.
FWD
figure 14.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of IGBT turn on gate resistor
di F/dt,di rr/dt = f(I c)
di F/dt,di rr/dt = f(R g)
diF/dt
diF
/
dt
t
t
t
t
t
t
t
t
d
ir r/dt
i
i
i
i
dir r
/dt
i
i
i
i
At
VCE
=
350
V
V
ꢁ
25 °C
125 °C
150 °C
At
VCE
VGE
I C
=
350
V
V
A
25 °C
ꢀ5 / 15
8
:
Tj
ꢀ5 / 15
50
:
Tj
125 °C
150 °C
VGE
=
=
=
R gon
=
figure 15.
IGBT
Reverse bias safe operating area
I C = f(V CE
)
IC MAX
I
I
I
I
I
I
I
I
I
I
I
I
V
V
V
V
At
175
°C
ꢁ
Tj =
8
8
R gon
R goff
=
=
ꢁ
Copyright Vincotech
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12 Jul. 2016 / Revision 1
10ꢀFZ071SA050SM02ꢀL524L18
datasheet
Boost Switching Characteristics
General conditions
=
=
=
125 °C
8 ꢁ
T j
Rgon
R goff
8 ꢁ
figure 1.
IGBT
figure 2.
IGBT
Turnꢀoff Switching Waveforms & definition of tdoff, tEoff (tEoff = integrating time for Eoff)
Turnꢀon Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)
tdoff
IC
IC
VGE
tEoff
VCE
VGE
VCE
tEon
ꢀ5
V
V
V
A
ꢀ5
15
V
VGE (0%) =
VGE (0%) =
15
V
VGE (100%) =
VC (100%) =
I C (100%) =
VGE (100%) =
VC (100%) =
I C (100%) =
350
50
350
V
50
A
0,109
0,152
ꢂs
ꢂs
0,036
0,191
ꢂs
ꢂs
t doff
t Eoff
=
=
tdon
tEon
=
=
figure 3.
IGBT
figure 4.
IGBT
Turnꢀoff Switching Waveforms & definition of tf
Turnꢀon Switching Waveforms & definition of tr
IC
IC
VCE
tr
VCE
tf
350
50
V
350
50
V
VC (100%) =
I C (100%) =
VC (100%) =
I C (100%) =
A
A
0,007
µs
0,011
µs
t f
=
tr =
Copyright Vincotech
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12 Jul. 2016 / Revision 1
10ꢀFZ071SA050SM02ꢀL524L18
datasheet
Boost Switching Characteristics
figure 5.
IGBT
figure 6.
IGBT
Turnꢀoff Switching Waveforms & definition of tEoff
Turnꢀon Switching Waveforms & definition of tEon
Poff
Pon
Eoff
Eon
tEoff
tEon
P off (100%) =
Eoff (100%) =
17,40
0,39
0,15
kW
mJ
ꢂs
P on (100%) =
Eon (100%) =
17,40
1,16
0,19
kW
mJ
ꢂs
t Eoff
=
tEon =
figure 7.
FWD
Turnꢀoff Switching Waveforms & definition of trr
IF
VF
fitted
VF (100%) =
I F (100%) =
I RRM (100%) =
350
50
V
A
ꢀ52
0,109
A
ꢂs
t rr
=
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12 Jul. 2016 / Revision 1
10ꢀFZ071SA050SM02ꢀL524L18
datasheet
Boost Switching Characteristics
figure 8.
FWD
figure 9.
FWD
Turnꢀon Switching Waveforms & definition of tQr (tQr = integrating time for Qr
)
Turnꢀon Switching Waveforms & definition of tErec (tErec
=
integrating time for Erec
)
IF
Erec
Qr
tErec
Prec
50
A
17,40
0,70
0,22
kW
I F (100%) =
Q r (100%) =
P rec (100%) =
Erec (100%) =
3,29
0,22
ꢂC
ꢂs
mJ
ꢂs
t Qr
=
tErec =
Copyright Vincotech
17
12 Jul. 2016 / Revision 1
10ꢀFZ071SA050SM02ꢀL524L18
datasheet
Ordering Code & Marking
Version
without thermal paste 12mm housing with solder pins
with thermal paste 12mm housing with solder pins
Ordering Code
10ꢀFZ071SA050SM02ꢀL524L18
10ꢀFZ071SA050SM02ꢀL524L18ꢀ/3/
Name
Date code
WWYY
UL & VIN
UL VIN
Lot
Serial
NN-NNNNNNNNNNNNNN
TTTTTTVV WWYY UL
VIN LLLLL SSSS
Text
NNꢀNNNNNNNNNNNNNNꢀTTTTTTVV
LLLLL
SSSS
Type&Ver
Lot number
Serial
Date code
WWYY
Datamatrix
TTTTTTTVV
LLLLL
SSSS
Outline
Pin table [mm]
Pin
X
Y
0
0
0
Function
DCꢀ
1
2
33,6
30,8
22
DCꢀ
3
GND
4
not assembled
5
12,9
10,1
0
0
S14
G14
6
7
not assembled
not assembled
8
9
0
0
0
7,1
9,9
Ph
10
11
12
13
14
15
16
17
18
19
20
21
22
Ph
Ph
12,7
not assembled
0
22,6
C13
not assembled
10,1
12,9
22,6
22,6
G13
S13
not assembled
22
22,6
22,6
22,6
14,8
8,2
GND
30,8
33,6
33,6
33,6
DC+
DC+
Therm1
Therm2
Copyright Vincotech
18
12 Jul. 2016 / Revision 1
10ꢀFZ071SA050SM02ꢀL524L18
datasheet
Pinout
Identification
ID
Component
IGBT
Voltage
650 V
Current
Function
Comment
T13, T14
D13, D14
D43, D44
D11, D12
C10, C20
Rt
50 A
50 A
10 A
35 A
Boost Switch
Boost Diode
FWD
650 V
FWD
650 V
Boost Sw. Protection Diode
Rectifier Diode
FWD
1600 V
630 V
Capacitor
Thermistor
DC Link Capacitance
Thermistor
Copyright Vincotech
19
12 Jul. 2016 / Revision 1
10ꢀFZ071SA050SM02ꢀL524L18
datasheet
Packaging instruction
Handling instruction
Standard packaging quantity (SPQ) 135
>SPQ
Standard
<SPQ
Sample
Handling instructions for flow 0 packages see vincotech.com website.
Package data
Package data for flow 0 packages see vincotech.com website.
UL recognition and file number
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.
Document No.:
Date:
Modification:
Pages
10ꢀFZ071SA050SM02ꢀL524L18ꢀD1ꢀ14
12 Jul. 2016
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine
the suitability of the information and the product for reader’s intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval
of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or effectiveness.
Copyright Vincotech
20
12 Jul. 2016 / Revision 1
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