10-FZ06NBA075SA-P916L33 [VINCOTECH]
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;
| 型号： | 10-FZ06NBA075SA-P916L33 |
| 厂家： | 
VINCOTECH |
| 描述： | Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current |
| 文件： | 总17页 (文件大小：779K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
10-FZ06NBA075SA-P916L33
datasheet
flowBOOST0
600V/75A
Features
flow0 housing
● Symmetric boost
● Clip-In PCB mounting
● Low Inductance Layout
Target Applications
Schematic
● UPS
Types
● 10-FZ06NBA075SA-P916L33
Maximum Ratings
Tj=25°C, unless otherwise specified
Condition
Parameter
Symbol
Value
Unit
Input Boost IGBT
VCE
IC
ICpulse
Ptot
Collector-emitter break down voltage
DC collector current
600
V
A
Th=80°C
Tc=80°C
56
74
Tj=Tjmax
tp limited by Tjmax
Tj=Tjmax
Repetitive peak collector current
Power dissipation per IGBT
Gate-emitter peak voltage
Short circuit ratings
225
A
Th=80°C
Tc=80°C
93
W
V
141
VGE
±20
tSC
Tj≤150°C
6
µs
V
VCC
VGE=15V
360
Tjmax
Maximum Junction Temperature
175
°C
Input Boost Inverse Diode
Peak Repetitive Reverse Voltage
DC forward current
VRRM
IF
IFRM
Ptot
Tj=25°C
600
V
A
Th=80°C
Tc=80°C
33
44
Tj=Tjmax
tp limited by Tjmax
Tj=Tjmax
Repetitive peak forward current
Power dissipation per Diode
Maximum Junction Temperature
90
A
Th=80°C
Tc=80°C
53
80
W
°C
Tjmax
175
copyright Vincotech
1
Revision: 8
10-FZ06NBA075SA-P916L33
datasheet
Maximum Ratings
Tj=25°C, unless otherwise specified
Condition
Parameter
Symbol
Value
Unit
Input Boost FWD
VRRM
IF
IFRM
Ptot
Tj=25°C
Peak Repetitive Reverse Voltage
DC forward current
600
V
A
Th=80°C
Tc=80°C
63
83
Tj=Tjmax
tp limited by Tjmax
Tj=Tjmax
Repetitive peak forward current
Power dissipation
150
A
Th=80°C
Tc=80°C
86
W
°C
130
Tjmax
Maximum Junction Temperature
175
Thermal Properties
Tstg
Top
Storage temperature
-40…+125
°C
°C
Operation temperature under switching condition
-40…+(Tjmax - 25)
Insulation Properties
Insulation voltage
Creepage distance
Clearance
Vis
t=2s
DC voltage
4000
V
min 12,7
min 12,7
mm
mm
copyright Vincotech
2
Revision: 8
10-FZ06NBA075SA-P916L33
datasheet
Characteristic Values
Conditions
Value
Typ
Parameter
Symbol
Unit
Vr [V] or
VGE [V] or
IC [A] or
IF [A] or
VCE [V] or
Tj
Min
Max
VGS [V]
VDS [V]
ID [A]
Input Boost IGBT
Gate emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off
Gate-emitter leakage current
Integrated Gate resistor
Turn-on delay time
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
5
1
5,8
6,5
2,1
0,2
650
VGE(th) VCE=VGE
0,0012
75
V
V
1,63
1,86
VCE(sat)
ICES
IGES
Rgint
td(on)
tr
15
0
600
0
mA
nA
Ω
20
none
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
151
154
20
Rise time
24
ns
209
233
93
111
1,09
1,50
1,78
2,41
td(off)
tf
Turn-off delay time
Rgoff=8 Ω
Rgon=8 Ω
±15
300
75
Fall time
Eon
Turn-on energy loss per pulse
Turn-off energy loss per pulse
Input capacitance
mWs
pF
Eoff
Cies
Coss
Crss
QGate
4620
288
137
470
Output capacitance
f=1MHz
f=1MHz
0
0
25
25
Tj=25°C
Tj=25°C
Reverse transfer capacitance
Gate charge
nC
Thermal grease
thickness≤50um
λ = 1 W/mK
RthJH
Thermal resistance chip to heatsink per chip
1,02
K/W
Input Boost Inverse Diode
Tj=25°C
Tj=125°C
1
1,63
1,56
2,05
VF
Diode forward voltage
10
V
Thermal grease
thickness≤50um
λ = 1 W/mK
RthJH
Thermal resistance chip to heatsink per chip
1,8
K/W
Input Boost FWD
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
1
1,49
1,46
2
VF
Irm
Forward voltage
75
75
V
µA
30
Reverse leakage current
Peak recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovered energy
Peak rate of fall of recovery current
600
300
70
86
IRRM
trr
A
117
152
3,07
6,19
0,61
1,33
5142
2414
ns
Qrr
Erec
Rgoff=8 Ω
±15
µC
mWs
A/µs
di(rec)max
/dt
Thermal grease
thickness≤50um
λ = 1 W/mK
RthJH
Thermal resistance chip to heatsink
1,11
K/W
Thermistor
Rated resistance
Deviation of R100
Power dissipation
Power dissipation constant
B-value
R
ΔR/R
P
Tj=25°C
22000
Ω
%
R100=1486 Ω
Tj=100°C
Tj=25°C
Tj=25°C
Tj=25°C
Tj=25°C
-5
+5
200
2
mW
mW/K
K
B(25/50)
Tol. ±3%
Tol. ±3%
3950
3996
B(25/100)
B-value
K
Vincotech NTC Reference
B
* see details on Thermistor charts on Figure 2.
copyright Vincotech
3
Revision: 8
10-FZ06NBA075SA-P916L33
datasheet
INPUT BOOST
Figure 1
BOOST IGBT
Figure 2
Typical output characteristics
BOOST IGBT
Typical output characteristics
IC = f(VCE
)
IC = f(VCE)
250
250
200
150
100
50
200
150
100
50
0
0
0
0
1
2
3
4
5
1
2
3
4
5
VCE (V)
VCE (V)
At
At
tp =
tp =
250
25
μs
250
150
μs
Tj =
Tj =
°C
°C
VGE from
VGE from
7 V to 17 V in steps of 1 V
7 V to 17 V in steps of 1 V
Figure 3
BOOST IGBT
Figure 4
BOOST FWD
Typical transfer characteristics
Typical diode forward current as
a function of forward voltage
IF = f(VF)
ID = f(VCE
)
75
250
200
150
100
60
45
30
15
50
Tj = Tjmax-25°C
Tj = 25°C
Tj = Tjmax-25°C
Tj = 25°C
0
0
0
2
4
6
8
10
12
0
0,5
1
1,5
2
2,5
3
VGS (V)
VF (V)
At
At
tp =
tp =
250
10
μs
250
μs
VCE
=
V
copyright Vincotech
4
Revision: 8
10-FZ06NBA075SA-P916L33
datasheet
INPUT BOOST
Figure 5
BOOST IGBT
Figure 6
BOOST IGBT
Typical switching energy losses
as a function of collector current
E = f(IC)
Typical switching energy losses
as a function of gate resistor
E = f(RG)
5
4
3
2
1
0
5
4
3
2
1
0
Eon High T
Eoff High T
Eon Low T
Eoff Low T
Eon High T
Eoff High T
Eoff Low T
Eon Low T
0
25
50
75
100
125
150
0
8
16
24
32
40
R G ( Ω )
I C (A)
With an inductive load at
With an inductive load at
Tj =
VCE
VGE
Rgon
Tj =
VCE
25/150
300
±15
8
°C
25/150
300
°C
V
V
A
=
=
=
=
V
V
Ω
Ω
V
GE
±15
=
IC =
75
Rgoff
=
8
Figure 7
BOOST IGBT
Figure 8
BOOST IGBT
Typical reverse recovery energy loss
as a function of collector current
Erec = f(Ic)
Typical reverse recovery energy loss
as a function of gate resistor
Erec = f(RG)
2,0
1,6
1,2
0,8
0,4
0,0
2,0
1,6
1,2
0,8
0,4
0,0
Erec High T
Erec High T
Erec Low T
Erec Low T
0
25
50
75
100
125
150
0
8
16
24
32
40
R G ( Ω )
I C (A)
With an inductive load at
With an inductive load at
Tj =
VCE
VGE
Rgon
Tj =
VCE
25/150
300
±15
8
°C
25/150
300
°C
V
V
A
=
=
=
=
V
V
Ω
Ω
V
GE
±15
=
IC =
75
Rgoff
=
8
copyright Vincotech
5
Revision: 8
10-FZ06NBA075SA-P916L33
datasheet
INPUT BOOST
Figure 9
BOOST IGBT
Figure 10
BOOST IGBT
Typical switching times as a
function of collector current
t = f(ID)
Typical switching times as a
function of gate resistor
t = f(RG)
1
1
tdoff
tdon
tdoff
tdon
0,1
0,1
tf
tf
tr
tr
0,01
0,01
0,001
0,001
0
25
50
75
100
125
150
I D (A)
0
8
16
24
32
40
R G ( Ω )
With an inductive load at
With an inductive load at
Tj =
VCE
VGE
Rgon
Tj =
VCE
150
300
±15
8
°C
150
300
±15
75
°C
V
V
A
=
=
=
=
V
V
Ω
Ω
V
GE
=
IC =
Rgoff
=
8,015
Figure 11
BOOST FWD
Figure 12
BOOST FWD
Typical reverse recovery time as a
function of collector current
trr = f(Ic)
Typical reverse recovery time as a
function of IGBT turn on gate resistor
trr = f(Rgon
)
0,20
0,16
0,12
0,08
0,04
0,00
0,6
0,5
0,4
0,3
0,2
0,1
0
trr High T
trr High T
trr Low T
trr Low T
0
8
16
24
32
40
0
25
50
75
100
125
I C (A) 150
R Gon ( Ω )
At
At
Tj =
VCE
VGE
Rgon
Tj =
VR =
IF =
25/150
300
±15
8
°C
25/150
300
°C
V
A
V
=
V
V
Ω
=
75
=
V
GE
=
±15
copyright Vincotech
6
Revision: 8
10-FZ06NBA075SA-P916L33
datasheet
INPUT BOOST
Figure 13
BOOST FWD
Figure 14
BOOST FWD
Typical reverse recovery charge as a
function of collector current
Qrr = f(IC)
Typical reverse recovery charge as a
function of IGBT turn on gate resistor
Qrr = f(Rgon
)
9,0
7,5
6,0
4,5
3,0
1,5
0,0
10
Qrr High T
8
Qrr High T
6
Qrr Low T
4
Qrr Low T
2
0
0
25
50
75
100
125
150
0
8
16
24
32
40
I C (A)
R Gon ( Ω)
At
At
Tj =
Tj =
VCE
VGE
Rgon
25/150
300
±15
8
°C
V
25/150
300
°C
V
A
V
=
=
VR =
V
IF
=
75
=
Ω
V
GE
=
±15
Figure 15
BOOST FWD
Figure 16
BOOST FWD
Typical reverse recovery current as a
function of collector current
IRRM = f(IC)
Typical reverse recovery current as a
function of IGBT turn on gate resistor
IRRM = f(Rgon
)
120
100
80
60
40
20
0
150
120
90
60
30
0
IRRM High T
IRRM Low T
IRRM High T
IRRM Low T
0
25
50
75
100
125
150
0
8
16
24
32
40
I C (A)
R Gon ( Ω )
At
At
Tj =
VCE
VGE
Rgon
Tj =
VR =
IF =
25/150
300
±15
8
°C
V
25/150
300
°C
V
A
V
=
=
V
75
=
VGE =
Ω
±15
copyright Vincotech
7
Revision: 8
10-FZ06NBA075SA-P916L33
datasheet
INPUT BOOST
Figure 17
BOOST FWD
Figure 18
BOOST FWD
Typical rate of fall of forward
and reverse recovery current as a
function of collector current
dI0/dt,dIrec/dt = f(Ic)
Typical rate of fall of forward
and reverse recovery current as a
function of IGBT turn on gate resistor
dI0/dt,dIrec/dt = f(Rgon
)
7500
15000
12000
9000
6000
3000
0
dI0/dt
dI0/dt
dIrec/dt
dIrec/dt
6000
4500
3000
1500
0
0
25
50
75
100
125
150
0
8
16
24
32
40
I
C (A)
R Gon ( Ω)
At
At
Tj =
VCE
VGE
Rgon
Tj =
VR =
IF =
25/150
300
±15
8
°C
V
25/150
300
°C
V
A
V
=
=
V
75
=
Ω
VCE
=
±15
Figure 19
BOOST IGBT
Figure 20
BOOST FWD
IGBT transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
FWD transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
101
101
100
100
D = 0,5
0,2
D = 0,5
0,2
10-1
10-1
0,1
0,1
0,05
0,02
0,01
0,005
0,05
0,02
0,01
0,005
0.000
t p (s)
0.000
t p (s)
10-2
10-2
10-5
10-4
10-3
10-2
10-1
100
1012
10-5
10-4
10-3
10-2
10-1
100
101102
At
At
tp / T
1,02
tp / T
1,11
D =
D =
RthJH
=
RthJH =
K/W
IGBT thermal model values
K/W
FWD thermal model values
R (C/W)
0,037
0,176
0,550
0,179
0,042
0,037
Tau (s)
6,37E+00
R (C/W)
0,03
Tau (s)
9,19E+00
8,57E-01
1,57E-01
2,60E-02
3,81E-03
3,09E-04
0,13
9,97E-01
1,49E-01
3,47E-02
5,94E-03
3,69E-04
0,43
0,33
0,12
0,07
copyright Vincotech
8
Revision: 8
10-FZ06NBA075SA-P916L33
datasheet
INPUT BOOST
Figure 21
BOOST IGBT
Figure 22
BOOST IGBT
Power dissipation as a
function of heatsink temperature
Ptot = f(Th)
Collector current as a
function of heatsink temperature
IC = f(Th)
200
160
120
80
90
75
60
45
30
15
0
40
0
Th ( o C)
Th ( o C)
0
50
100
150
200
0
50
100
150
200
At
At
Tj =
Tj =
VGE
175
ºC
175
15
ºC
V
=
Figure 23
Power dissipation as a
BOOST FWD
Figure 24
Forward current as a
BOOST FWD
function of heatsink temperature
function of heatsink temperature
Ptot = f(Th)
IF = f(Th)
180
150
120
90
100
80
60
40
20
0
60
30
0
o C)
T h (
o C)
0
50
100
150
200
T h
(
0
50
100
150
200
At
At
Tj =
Tj =
175
ºC
175
ºC
copyright Vincotech
9
Revision: 8
10-FZ06NBA075SA-P916L33
datasheet
INPUT BOOST
Figure 25
BOOST IGBT
Figure 26
BOOST IGBT
Safe operating area as a function
of drain-source voltage
Gate voltage vs Gate charge
I
C = f(VCE
)
VGE = f(Qg)
16
103
14
12
10
8
120V
102
101
100
10uS
400V
1mS
100uS
10mS
6
DC
4
100mS
2
0
103
0
100
200
300
400
500
600
VDS (V)
101
102
100
Qg (nC)
At
At
IC
=
D =
Th =
VGE
75
A
single pulse
80
ºC
=
V
±15
Tj =
Tjmax
ºC
copyright Vincotech
10
Revision: 8
10-FZ06NBA075SA-P916L33
datasheet
BOOST INV. DIODE
Figure 1
BOOST INV. DIODE
Figure 2
BOOST INV. DIODE
Typical diode forward current as
a function of forward voltage
IF= f(VF)
Diode transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
101
100
10-1
100
80
60
40
D = 0,5
0,2
0,1
0,05
20
0,02
0,01
0,005
0.000
Tj = Tjmax-25°C
Tj = 25°C
0
10-2
t p (s)
0
0,5
1
1,5
2
2,5
3
VF (V)
10-5
10-4
10-3
10-2
10-1
100
1012
At
tp =
At
tp / T
250
μs
D =
RthJH
=
1,800
K/W
R (C/W)
Tau (s)
0,03771 8,99E+00
0,1799
0,599
8,31E-01
1,28E-01
2,78E-02
5,76E-03
4,67E-04
0,4734
0,3096
0,2008
Figure 3
Power dissipation as a
BOOST INV. DIODE
Figure 4
Forward current as a
BOOST INV. DIODE
function of heatsink temperature
function of heatsink temperature
Ptot = f(Th)
IF = f(Th)
100
80
60
40
20
0
60
50
40
30
20
10
0
0
50
100
150
T h
(
o C)
200
0
50
100
150
T h
(
o C)
200
At
At
Tj =
Tj =
175
ºC
175
ºC
copyright Vincotech
11
Revision: 8
10-FZ06NBA075SA-P916L33
datasheet
Thermistor
Figure 1
Thermistor
Figure 2
Typical NTC resistance values
Thermistor
Typical NTC characteristic
as a function of temperature
RT = f(T)
1
1
NTC-typical temperature characteristic
B25/100
−
24000
R(T) = R25 e
[Ω]
T
T25
20000
16000
12000
8000
4000
0
25
50
75
100
125
T ( ° C)
copyright Vincotech
12
Revision: 8
10-FZ06NBA075SA-P916L33
datasheet
Switching Definitions Boost IGBT
General conditions
Tj
=
=
=
150 °C
8 Ω
Rgon
Rgoff
8 Ω
Figure 1
BOOST IGBT
Figure 2
BOOST IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff
Turn-on Switching Waveforms & definition of tdon, tEon
(tEoff = integrating time for Eoff
)
(tEon = integrating time for Eon)
250
150
%
%
IC
200
150
100
50
120
tdoff
VCE
VGE 90%
90
VCE 90%
IC
VCE
60
30
VGE
tdon
tEoff
V CE
3%
VGE 10%
VGE
Ic 10%
tEon
0
0
IC 1%
-30
-50
-0,3
-0,15
0
0,15
0,3
0,45
0,6
0,75
time (us)
2,8
2,9
3
3,1
3,2
3,3
3,4
time(us)
VGE (0%) =
VGE (0%) =
-15
15
V
-15
15
V
VGE (100%) =
VC (100%) =
IC (100%) =
VGE (100%) =
VC (100%) =
IC (100%) =
V
V
300
74
V
300
74
V
A
A
tdoff
tEoff
=
=
tdon
tEon
=
=
0,23
0,61
μs
μs
0,15
0,30
μs
μs
Figure 3
BOOST IGBT
Figure 4
BOOST IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
125
250
fitted
VCE
%
%
Ic
IC
100
200
IC 90%
75
150
IC 60%
VCE
50
100
IC 90%
IC 40%
tr
25
50
IC 10%
IC 10%
0
0
tf
-25
-50
0,05
0,1
0,15
0,2
0,25
0,3
0,35
0,4
3,05
3,1
3,15
3,2
3,25
3,3
time(us)
time (us)
VC (100%) =
IC (100%) =
tf =
VC (100%) =
IC (100%) =
tr =
300
V
300
74
V
74
A
A
0,11
μs
0,02
μs
copyright Vincotech
13
Revision: 8
10-FZ06NBA075SA-P916L33
datasheet
Switching Definitions Boost IGBT
Figure 5
BOOST IGBT
Figure 6
BOOST IGBT
Turn-off Switching Waveforms & definition of tEoff
Turn-on Switching Waveforms & definition of tEon
120
150
%
IC
%
Poff
1%
Eoff
100
125
Pon
Eon
80
100
75
60
40
50
20
25
VGE90%
VCE3%
V GE10%
0
0
tEon
tEoff
-20
-25
-0,15
0
0,15
0,3
0,45
0,6
0,75
time (us)
2,9
3
3,1
3,2
3,3
3,4
time(us)
Poff (100%) =
Eoff (100%) =
Pon (100%) =
Eon (100%) =
22,30
2,41
0,61
kW
mJ
μs
22,30
1,50
0,30
kW
mJ
μs
tEoff
=
tEon =
Figure 7
BOOST IGBT
Figure 8
BOOST FWD
Gate voltage vs Gate charge (measured)
Turn-off Switching Waveforms & definition of trr
20
150
%
15
10
5
Id
100
trr
50
Vd
0
0
IRRM 10%
fitted
-5
-50
-10
-15
-20
-100
IRRM 90%
IRRM 100%
-150
-200
0
200
400
600
800
3
3,1
3,2
3,3
3,4
3,5
3,6
time(us)
Qg (nC)
VGEoff
VGEon
=
=
Vd (100%) =
Id (100%) =
-15
15
V
300
V
V
74
A
VC (100%) =
IC (100%) =
Qg =
IRRM (100%) =
300
74
V
-86
0,15
A
trr
=
A
μs
794,04
nC
copyright Vincotech
14
Revision: 8
10-FZ06NBA075SA-P916L33
datasheet
Switching Definitions Boost IGBT
Figure 9
BOOST FWD
Figure 10
BOOST FWD
Turn-on Switching Waveforms & definition of tQrr
(tQrr = integrating time for Qrr)
Turn-on Switching Waveforms & definition of tErec
(tErec= integrating time for Erec
)
150
125
%
%
Id
Erec
100
100
75
50
25
0
tQrr
50
tErec
Qrr
0
-50
-100
-150
Prec
-25
3
3,15
3,3
3,45
3,6
3,75
3,9
3
3,15
3,3
3,45
3,6
3,75
3,9
time(us)
time(us)
Id (100%) =
Prec (100%) =
Erec (100%) =
74
A
22,30
1,33
0,55
kW
mJ
μs
Qrr (100%) =
6,19
0,55
μC
μs
tQrr
=
tErec =
copyright Vincotech
15
Revision: 8
10-FZ06NBA075SA-P916L33
datasheet
Ordering Code and Marking - Outline - Pinout
Ordering Code & Marking
Version
Ordering Code
in DataMatrix as
P916L33
in packaging barcode as
Standard in flow0 12mm housing
10-FZ06NBA075SA-P916L33
P916L33
Outline
Pinout
copyright Vincotech
16
Revision: 8
10-FZ06NBA075SA-P916L33
datasheet
PRODUCT STATUS DEFINITIONS
Datasheet Status
Product Status
Definition
This datasheet contains the design specifications for
product development. Specifications may change in any
manner without notice. The data contained is exclusively
intended for technically trained staff.
Target
Formative or In Design
First Production
This datasheet contains preliminary data, and
supplementary data may be published at a later date.
Vincotech reserves the right to make changes at any time
without notice in order to improve design. The data
contained is exclusively intended for technically trained
staff.
Preliminary
This datasheet contains final specifications. Vincotech
reserves the right to make changes at any time without
notice in order to improve design. The data contained is
exclusively intended for technically trained staff.
Final
Full Production
DISCLAIMER
The information given in this datasheet describes the type of component and does not represent assured characteristics. For tested
values please contact Vincotech.Vincotech reserves the right to make changes without further notice to any products herein to improve
reliability, function or design. Vincotech does not assume any liability arising out of the application or use of any product or circuit
described herein; neither does it convey any license under its patent rights, nor the rights of others.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written
approval of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to
cause the failure of the life support device or system, or to affect its safety or effectiveness.
copyright Vincotech
17
Revision: 8
相关型号：
10-FZ06NIA030SA-P924F33
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current
VINCOTECH
10-FZ06PPA030SJ-LS54E08
5us short circuit withstand time;High speed switching;Low EMI;Short tail current
VINCOTECH
10-FZ071SA050SM02-L524L18
High efficiency in hard switching and resonant topologies;High speed switching;Low gate charge
VINCOTECH
10-FZ071SA075S501-L525L58
High speed and smooth switching;Low gate charge;Very low collector emitter saturation voltage
VINCOTECH
10-FZ071SA075SM02-L525L18
High efficiency in hard switching and resonant topologies;High speed switching;Low gate charge
VINCOTECH
10-FZ071SA100SM02-L526L18
High efficiency in hard switching and resonant topologies;High speed switching;Low gate charge
VINCOTECH
10-FZ073BA030SM02-M575L38
High efficiency in hard switching and resonant topologies;High speed switching;Low gate charge
VINCOTECH
©2020 ICPDF网 联系我们和版权申明