30-FT10NIA400S702-LP59F04 [VINCOTECH]

Low collector emitter saturation voltage;High speed and smooth switching;
30-FT10NIA400S702-LP59F04
型号: 30-FT10NIA400S702-LP59F04
厂家: VINCOTECH    VINCOTECH
描述:

Low collector emitter saturation voltage;High speed and smooth switching

文件: 总29页 (文件大小:8518K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
30-FT10NIA400S702-LP59F04  
datasheet  
flowNPC 2  
950 V / 400 A  
Topology features  
flow 2 13 mm housing  
● Low side Kelvin Emitter for improved switching performance  
● Neutral Point Clamped Topology (I-Type)  
● Split topology  
● Temperature sensor  
Component features  
● Low collector emitter saturation voltage  
● High speed and smooth switching  
Schematic  
Housing features  
● Base isolation: Si3N4  
● Convex shaped baseplate for superior thermal contact  
● Cu baseplate  
● Thermo-mechanical push-and-pull force relief  
● Solder pin  
Target applications  
● Solar Inverters  
Types  
● 30-FT10NIA400S702-LP59F04  
Copyright Vincotech  
1
19 Jul. 2022 / Revision 2  
30-FT10NIA400S702-LP59F04  
datasheet  
Maximum Ratings  
Tj = 25 °C, unless otherwise specified  
Parameter  
Symbol  
Conditions  
Value  
Unit  
Buck Switch  
VCES  
Collector-emitter voltage  
950  
315  
800  
595  
±20  
175  
V
A
IC  
Collector current (DC current)  
Repetitive peak collector current  
Total power dissipation  
Tj = Tjmax  
Ts = 80 °C  
Ts = 80 °C  
ICRM  
tp limited by Tjmax  
Tj = Tjmax  
A
Ptot  
W
V
VGES  
Gate-emitter voltage  
Tjmax  
Maximum junction temperature  
°C  
Buck Diode  
VRRM  
Peak repetitive reverse voltage  
1200  
131  
455  
650  
305  
175  
V
A
IF  
Forward current (DC current)  
Repetitive peak forward current  
Surge (non-repetitive) forward current  
Total power dissipation  
Tj = Tjmax  
Ts = 80 °C  
IFRM  
IFSM  
Ptot  
tp limited by Tjmax  
A
Single Half Sine Wave,  
tp = 10 ms  
Tj = 25 °C  
Ts = 80 °C  
A
Tj = Tjmax  
W
°C  
Tjmax  
Maximum junction temperature  
Boost Switch  
VCES  
Collector-emitter voltage  
950  
388  
800  
483  
±20  
175  
V
A
IC  
Collector current (DC current)  
Repetitive peak collector current  
Total power dissipation  
Tj = Tjmax  
Ts = 80 °C  
Ts = 80 °C  
ICRM  
tp limited by Tjmax  
Tj = Tjmax  
A
Ptot  
W
V
VGES  
Gate-emitter voltage  
Tjmax  
Maximum junction temperature  
°C  
Copyright Vincotech  
2
19 Jul. 2022 / Revision 2  
30-FT10NIA400S702-LP59F04  
datasheet  
Maximum Ratings  
Tj = 25 °C, unless otherwise specified  
Parameter  
Symbol  
Conditions  
Value  
Unit  
Boost Diode  
VRRM  
Peak repetitive reverse voltage  
950  
131  
400  
253  
175  
V
A
IF  
Forward current (DC current)  
Repetitive peak forward current  
Total power dissipation  
Tj = Tjmax  
Ts = 80 °C  
Ts = 80 °C  
IFRM  
tp limited by Tjmax  
Tj = Tjmax  
A
Ptot  
W
°C  
Tjmax  
Maximum junction temperature  
Boost Sw. Inv. Diode  
VRRM  
Peak repetitive reverse voltage  
950  
131  
400  
253  
175  
V
A
IF  
Forward current (DC current)  
Repetitive peak forward current  
Total power dissipation  
Tj = Tjmax  
Ts = 80 °C  
Ts = 80 °C  
IFRM  
tp limited by Tjmax  
Tj = Tjmax  
A
Ptot  
W
°C  
Tjmax  
Maximum junction temperature  
Module Properties  
Thermal Properties  
Tstg  
Tjop  
Storage temperature  
-40…+125  
°C  
°C  
Operation temperature under switching  
condition  
-40…+(Tjmax - 25)  
Isolation Properties  
Isolation voltage  
Creepage distance  
Clearance  
Visol  
DC Test Voltage*  
tp = 2 s  
6000  
>12,7  
>12,7  
≥ 600  
V
mm  
mm  
Comparative Tracking Index  
*100 % tested in production  
CTI  
Copyright Vincotech  
3
19 Jul. 2022 / Revision 2  
30-FT10NIA400S702-LP59F04  
datasheet  
Characteristic Values  
Symbol  
Parameter  
Conditions  
Values  
Typ  
Unit  
VCE [V] IC [A]  
VDS [V] ID [A] Tj [°C]  
VGE [V]  
VGS [V]  
Min  
Max  
VF [V]  
IF [A]  
Buck Switch  
Static  
VGE(th)  
Gate-emitter threshold voltage  
VCE = VGE  
0,00668 25  
25  
4,35  
5,1  
5,85  
V
V
1,67  
1,94  
2,01  
2,35(1)  
VCEsat  
Collector-emitter saturation voltage  
15  
400  
125  
150  
ICES  
IGES  
rg  
Collector-emitter cut-off current  
Gate-emitter leakage current  
Internal gate resistance  
Input capacitance  
0
950  
0
25  
8
µA  
nA  
Ω
20  
25  
400  
0,375  
26000  
556  
Cies  
Coes  
Cres  
Qg  
pF  
pF  
pF  
nC  
Output capacitance  
f = 100 kHz  
0
25  
25  
25  
Reverse transfer capacitance  
Gate charge  
80  
±15  
0
920  
Thermal  
λpaste = 3,4 W/mK  
(PSX)  
(2)  
Rth(j-s)  
Thermal resistance junction to sink  
Dynamic  
0,16  
K/W  
25  
145  
145,48  
146,37  
29,03  
31,07  
31,14  
124,5  
147,88  
154,66  
28,25  
45,41  
53,81  
10,4  
td(on)  
Turn-on delay time  
Rise time  
125  
150  
25  
ns  
ns  
tr  
125  
150  
25  
Rgon = 2 Ω  
Rgoff = 2 Ω  
td(off)  
Turn-off delay time  
Fall time  
125  
150  
25  
ns  
±15  
600  
400  
tf  
125  
150  
25  
ns  
QrFWD=0,707 µC  
QrFWD=0,734 µC  
QrFWD=0,802 µC  
Eon  
Turn-on energy (per pulse)  
Turn-off energy (per pulse)  
125  
150  
25  
10,91  
10,73  
10,86  
17,3  
mWs  
mWs  
Eoff  
125  
150  
18,77  
Copyright Vincotech  
4
19 Jul. 2022 / Revision 2  
30-FT10NIA400S702-LP59F04  
datasheet  
Characteristic Values  
Symbol  
Parameter  
Conditions  
Values  
Typ  
Unit  
VCE [V] IC [A]  
VDS [V] ID [A] Tj [°C]  
VGE [V]  
VGS [V]  
Min  
Max  
VF [V]  
IF [A]  
Buck Diode  
Static  
25  
1,51  
1,77  
1,91  
1,8(1)  
1000  
VF  
IR  
Forward voltage  
100  
125  
150  
V
Reverse leakage current  
Thermal  
Vr = 1200 V  
25  
175  
µA  
λpaste = 3,4 W/mK  
(PSX)  
(2)  
Rth(j-s)  
Thermal resistance junction to sink  
Dynamic  
0,31  
K/W  
25  
71,16  
73,03  
IRM  
Peak recovery current  
125  
150  
25  
A
74,16  
16,85  
trr  
Reverse recovery time  
125  
150  
25  
16,93  
ns  
17,82  
0,707  
di/dt=10042 A/µs  
di/dt=8996 A/µs  
di/dt=11100 A/µs  
Qr  
Recovered charge  
±15  
600  
400  
125  
150  
25  
0,734  
μC  
0,802  
0,181  
Erec  
Reverse recovered energy  
Peak rate of fall of recovery current  
125  
150  
25  
0,191  
mWs  
A/µs  
0,211  
10735,79  
11912,43  
10123,02  
(dirf/dt)max  
125  
150  
Copyright Vincotech  
5
19 Jul. 2022 / Revision 2  
30-FT10NIA400S702-LP59F04  
datasheet  
Characteristic Values  
Symbol  
Parameter  
Conditions  
Values  
Typ  
Unit  
VCE [V] IC [A]  
VDS [V] ID [A] Tj [°C]  
VGE [V]  
VGS [V]  
Min  
Max  
VF [V]  
IF [A]  
Boost Switch  
Static  
VGE(th)  
Gate-emitter threshold voltage  
VCE = VGE  
0,0065  
400  
25  
4,15  
4,85  
5,65  
V
V
25  
1,21  
1,23  
1,24  
1,4(1)  
VCEsat  
Collector-emitter saturation voltage  
15  
125  
150  
ICES  
IGES  
rg  
Collector-emitter cut-off current  
Gate-emitter leakage current  
Internal gate resistance  
Input capacitance  
0
950  
0
25  
25  
8
µA  
nA  
Ω
20  
200  
0,75  
49200  
530  
Cies  
Coes  
Cres  
Qg  
pF  
pF  
pF  
nC  
Output capacitance  
f = 100 kHz  
0
25  
25  
25  
Reverse transfer capacitance  
Gate charge  
220  
±15  
0
4100  
Thermal  
λpaste = 3,4 W/mK  
(PSX)  
(2)  
Rth(j-s)  
Thermal resistance junction to sink  
Dynamic  
0,2  
K/W  
25  
350,79  
357,58  
359,52  
33,96  
37,07  
38,17  
323,89  
373,74  
386,34  
263,26  
364,29  
383,57  
8,2  
td(on)  
Turn-on delay time  
Rise time  
125  
150  
25  
ns  
ns  
tr  
125  
150  
25  
Rgon = 2 Ω  
Rgoff = 2 Ω  
td(off)  
Turn-off delay time  
Fall time  
125  
150  
25  
ns  
±15  
600  
400  
tf  
125  
150  
25  
ns  
QrFWD=6,17 µC  
QrFWD=15,31 µC  
QrFWD=18,06 µC  
Eon  
Turn-on energy (per pulse)  
Turn-off energy (per pulse)  
125  
150  
25  
10,02  
10,86  
50,11  
71,74  
76,66  
mWs  
mWs  
Eoff  
125  
150  
Copyright Vincotech  
6
19 Jul. 2022 / Revision 2  
30-FT10NIA400S702-LP59F04  
datasheet  
Characteristic Values  
Symbol  
Parameter  
Conditions  
Values  
Typ  
Unit  
VCE [V] IC [A]  
VDS [V] ID [A] Tj [°C]  
VGE [V]  
VGS [V]  
Min  
Max  
VF [V]  
IF [A]  
Boost Diode  
Static  
25  
2,1  
2,64  
2,44  
2,36  
2,8(1)  
VF  
IR  
Forward voltage  
200  
125  
150  
V
Reverse leakage current  
Thermal  
Vr = 950 V  
25  
8
µA  
λpaste = 3,4 W/mK  
(PSX)  
(2)  
Rth(j-s)  
Thermal resistance junction to sink  
Dynamic  
0,38  
K/W  
25  
209,43  
261,92  
279,24  
56,49  
164,87  
182,42  
6,17  
IRM  
Peak recovery current  
125  
150  
25  
A
trr  
Reverse recovery time  
125  
150  
25  
ns  
di/dt=10226 A/µs  
di/dt=9659 A/µs  
di/dt=9779 A/µs  
Qr  
Recovered charge  
±15  
600  
400  
125  
150  
25  
15,31  
18,06  
2,5  
μC  
Erec  
Reverse recovered energy  
Peak rate of fall of recovery current  
125  
150  
25  
6,62  
mWs  
A/µs  
7,85  
7421,55  
7019,14  
6599,04  
(dirf/dt)max  
125  
150  
Copyright Vincotech  
7
19 Jul. 2022 / Revision 2  
30-FT10NIA400S702-LP59F04  
datasheet  
Characteristic Values  
Symbol  
Parameter  
Conditions  
Values  
Typ  
Unit  
VCE [V] IC [A]  
VDS [V] ID [A] Tj [°C]  
VGE [V]  
VGS [V]  
Min  
Max  
VF [V]  
IF [A]  
Boost Sw. Inv. Diode  
Static  
25  
2,1  
2,64  
2,44  
2,36  
2,8(1)  
VF  
IR  
Forward voltage  
200  
125  
150  
V
Reverse leakage current  
Vr = 950 V  
25  
8
µA  
Thermal  
λpaste = 3,4 W/mK  
(PSX)  
(2)  
Rth(j-s)  
Thermal resistance junction to sink  
0,38  
K/W  
Thermistor  
Static  
R
ΔR/R  
P
Rated resistance  
Deviation of R100  
Power dissipation  
Power dissipation constant  
B-value  
25  
22  
kΩ  
%
R100 = 1484 Ω  
100  
25  
-5  
5
130  
1,5  
mW  
mW/K  
K
d
25  
B(25/50)  
Tol. ±1 %  
Tol. ±1 %  
3962  
4000  
B(25/100)  
B-value  
K
Vincotech Thermistor Reference  
I
(1)  
Value at chip level  
(2)  
Only valid with pre-applied Vincotech thermal interface material.  
Copyright Vincotech  
8
19 Jul. 2022 / Revision 2  
30-FT10NIA400S702-LP59F04  
datasheet  
Buck Switch Characteristics  
figure 1.  
IGBT  
figure 2.  
IGBT  
Typical output characteristics  
Typical output characteristics  
IC = f(VCE  
)
IC = f(VCE)  
1000  
1250  
VGE  
:
7 V  
8 V  
9 V  
1000  
750  
500  
250  
0
10 V  
11 V  
12 V  
13 V  
14 V  
15 V  
16 V  
17 V  
750  
500  
250  
0
0,0  
0,5  
1,0  
1,5  
2,0  
2,5  
3,0  
3,5  
4,0  
0,0  
0,5  
1,0  
1,5  
2,0  
2,5  
3,0  
3,5  
4,0  
V
CE(V)  
VCE(V)  
tp  
=
=
tp  
=
250  
15  
μs  
V
250  
150  
μs  
°C  
25 °C  
VGE  
Tj =  
125 °C  
150 °C  
Tj:  
VGE from 7 V to 17 V in steps of 1 V  
figure 3.  
IGBT  
figure 4.  
IGBT  
Typical transfer characteristics  
Transient thermal impedance as a function of pulse width  
IC = f(VGE  
)
Zth(j-s) = f(tp)  
0
400  
10  
-1  
300  
200  
100  
0
10  
-2  
10  
0,5  
0,2  
0,1  
-3  
10  
0,05  
0,02  
0,01  
0,005  
0
-4  
10  
-5  
-4  
10  
-3  
10  
-2  
10  
-1  
10  
0
10  
1
10  
2
0
2
4
6
8
10  
10  
10  
tp(s)  
V
GE(V)  
tp  
=
=
250  
10  
μs  
V
D =  
tp / T  
0,16  
25 °C  
VCE  
125 °C  
150 °C  
Rth(j-s) =  
Tj:  
K/W  
IGBT thermal model values  
R (K/W)  
τ (s)  
2,78E-02  
4,33E-02  
5,78E-02  
2,24E-02  
8,34E-03  
3,63E+00  
8,40E-01  
9,61E-02  
8,88E-03  
6,81E-04  
Copyright Vincotech  
9
19 Jul. 2022 / Revision 2  
30-FT10NIA400S702-LP59F04  
datasheet  
Buck Switch Characteristics  
figure 5.  
IGBT  
Safe operating area  
IC = f(VCE  
)
1000  
100  
10  
1
0,1  
0,01  
1
10  
100  
1000  
10000  
V
CE(V)  
D =  
single pulse  
Ts =  
80  
15  
°C  
V
VGE  
=
Tj =  
Tjmax  
Copyright Vincotech  
10  
19 Jul. 2022 / Revision 2  
30-FT10NIA400S702-LP59F04  
datasheet  
Buck Diode Characteristics  
figure 6.  
FWD  
figure 7.  
FWD  
Typical forward characteristics  
Transient thermal impedance as a function of pulse width  
IF = f(VF)  
Zth(j-s) = f(tp)  
0
300  
250  
200  
150  
100  
50  
10  
-1  
10  
-2  
10  
0,5  
0,2  
0,1  
-3  
10  
0,05  
0,02  
0,01  
0,005  
0
-4  
0
10  
-5  
-4  
10  
-3  
10  
-2  
10  
-1  
10  
0
1
2
0
1
2
3
4
5
10  
10  
10  
10  
tp(s)  
VF(V)  
tp  
=
250  
μs  
D =  
tp / T  
0,311  
25 °C  
125 °C  
150 °C  
Rth(j-s) =  
Tj:  
K/W  
FWD thermal model values  
R (K/W)  
τ (s)  
1,70E-02  
5,16E-02  
1,30E-01  
8,31E-02  
3,01E-02  
6,92E+00  
1,30E+00  
1,14E-01  
1,37E-02  
2,13E-03  
Copyright Vincotech  
11  
19 Jul. 2022 / Revision 2  
30-FT10NIA400S702-LP59F04  
datasheet  
Boost Switch Characteristics  
figure 8.  
IGBT  
figure 9.  
IGBT  
Typical output characteristics  
Typical output characteristics  
IC = f(VCE  
)
IC = f(VCE)  
1000  
1000  
VGE  
:
7 V  
8 V  
9 V  
10 V  
11 V  
12 V  
13 V  
14 V  
15 V  
16 V  
17 V  
750  
500  
250  
0
750  
500  
250  
0
0,00  
0,25  
0,50  
0,75  
1,00  
1,25  
1,50  
1,75  
2,00  
0,00  
0,25  
0,50  
0,75  
1,00  
1,25  
1,50  
1,75  
2,00  
V
CE(V)  
VCE(V)  
tp  
=
=
tp  
=
250  
15  
μs  
V
250  
150  
μs  
°C  
25 °C  
VGE  
Tj =  
125 °C  
150 °C  
Tj:  
VGE from 7 V to 17 V in steps of 1 V  
figure 10.  
IGBT  
figure 11.  
IGBT  
Typical transfer characteristics  
Transient thermal impedance as a function of pulse width  
IC = f(VGE  
)
Zth(j-s) = f(tp)  
0
400  
10  
-1  
300  
200  
100  
0
10  
-2  
10  
0,5  
0,2  
0,1  
-3  
10  
0,05  
0,02  
0,01  
0,005  
0
-4  
10  
-5  
-4  
10  
-3  
10  
-2  
10  
-1  
10  
0
10  
1
10  
2
0
1
2
3
4
5
6
7
8
10  
10  
tp(s)  
V
GE(V)  
tp  
=
=
250  
10  
μs  
V
D =  
tp / T  
0,196  
25 °C  
VCE  
125 °C  
150 °C  
Rth(j-s) =  
Tj:  
K/W  
IGBT thermal model values  
R (K/W)  
τ (s)  
1,70E-02  
5,92E-02  
8,39E-02  
2,62E-02  
1,02E-02  
6,58E+00  
1,50E+00  
1,08E-01  
8,19E-03  
5,83E-04  
Copyright Vincotech  
12  
19 Jul. 2022 / Revision 2  
30-FT10NIA400S702-LP59F04  
datasheet  
Boost Switch Characteristics  
figure 12.  
IGBT  
Safe operating area  
IC = f(VCE  
)
1000  
100  
10  
1
0,1  
0,01  
1
10  
100  
1000  
10000  
V
CE(V)  
D =  
single pulse  
Ts =  
80  
15  
°C  
V
VGE  
=
Tj =  
Tjmax  
Copyright Vincotech  
13  
19 Jul. 2022 / Revision 2  
30-FT10NIA400S702-LP59F04  
datasheet  
Boost Diode Characteristics  
figure 13.  
FWD  
figure 14.  
FWD  
Typical forward characteristics  
Transient thermal impedance as a function of pulse width  
IF = f(VF)  
Zth(j-s) = f(tp)  
0
600  
500  
400  
300  
200  
100  
0
10  
-1  
10  
-2  
10  
0,5  
0,2  
0,1  
-3  
10  
0,05  
0,02  
0,01  
0,005  
0
-4  
10  
-5  
-4  
10  
-3  
10  
-2  
10  
-1  
10  
0
1
2
0
1
2
3
4
5
10  
10  
10  
10  
tp(s)  
VF(V)  
tp  
=
250  
μs  
D =  
tp / T  
0,376  
25 °C  
125 °C  
150 °C  
Rth(j-s) =  
Tj:  
K/W  
FWD thermal model values  
R (K/W)  
τ (s)  
2,41E-02  
7,30E-02  
1,38E-01  
1,11E-01  
3,09E-02  
5,52E+00  
1,14E+00  
1,19E-01  
1,15E-02  
1,39E-03  
Copyright Vincotech  
14  
19 Jul. 2022 / Revision 2  
30-FT10NIA400S702-LP59F04  
datasheet  
Boost Sw. Inv. Diode Characteristics  
figure 15.  
FWD  
figure 16.  
FWD  
Typical forward characteristics  
Transient thermal impedance as a function of pulse width  
IF = f(VF)  
Zth(j-s) = f(tp)  
0
600  
500  
400  
300  
200  
100  
0
10  
-1  
10  
-2  
10  
0,5  
0,2  
0,1  
-3  
10  
0,05  
0,02  
0,01  
0,005  
0
-4  
10  
-5  
-4  
10  
-3  
10  
-2  
10  
-1  
10  
0
1
2
0
1
2
3
4
5
10  
10  
10  
10  
tp(s)  
VF(V)  
tp  
=
250  
μs  
D =  
tp / T  
0,376  
25 °C  
125 °C  
150 °C  
Rth(j-s) =  
Tj:  
K/W  
FWD thermal model values  
R (K/W)  
τ (s)  
2,41E-02  
7,30E-02  
1,38E-01  
1,11E-01  
3,09E-02  
5,52E+00  
1,14E+00  
1,19E-01  
1,15E-02  
1,39E-03  
Copyright Vincotech  
15  
19 Jul. 2022 / Revision 2  
30-FT10NIA400S702-LP59F04  
datasheet  
Thermistor Characteristics  
figure 17.  
Thermistor  
Typical NTC characteristic as function of temperature  
RT = f(T)  
25000  
20000  
15000  
10000  
5000  
0
20  
40  
60  
80  
100  
120  
140  
T(°C)  
Copyright Vincotech  
16  
19 Jul. 2022 / Revision 2  
30-FT10NIA400S702-LP59F04  
datasheet  
Buck Switching Characteristics  
figure 18.  
IGBT  
figure 19.  
IGBT  
Typical switching energy losses as a function of collector current  
Typical switching energy losses as a function of IGBT turn on gate resistor  
E = f(IC)  
E = f(Rg)  
35  
30  
25  
20  
15  
10  
5
40  
35  
30  
25  
20  
15  
10  
5
Eoff  
Eoff  
Eon  
Eon  
Eon  
Eon  
Eon  
Eon  
Eoff  
Eoff  
Eoff  
Eoff  
0
0
0
100  
200  
300  
400  
500  
600  
700  
800  
IC(A)  
0
1
2
3
4
5
6
7
8
9
Rg(Ω)  
With an inductive load at  
With an inductive load at  
25 °C  
25 °C  
VCE  
VGE  
=
=
=
=
VCE  
VGE  
IC  
=
=
=
600  
±15  
2
V
V
Ω
Ω
125 °C  
150 °C  
600  
±15  
400  
V
V
A
125 °C  
150 °C  
Tj:  
Tj:  
Rgon  
Rgoff  
2
figure 20.  
FWD  
figure 21.  
FWD  
Typical reverse recovered energy loss as a function of collector current  
Typical reverse recovered energy loss as a function of IGBT turn on gate resistor  
Erec = f(IC)  
Erec = f(Rg)  
0,30  
0,25  
0,20  
0,15  
0,10  
0,05  
0,00  
0,6  
0,5  
0,4  
0,3  
0,2  
0,1  
0,0  
Erec  
Erec  
Erec  
Erec  
Erec  
Erec  
0
100  
200  
300  
400  
500  
600  
700  
800  
0
1
2
3
4
5
6
7
8
9
IC(A)  
Rg(Ω)  
With an inductive load at  
With an inductive load at  
25 °C  
25 °C  
VCE  
VGE  
Rgon  
=
=
=
VCE  
VGE  
IC  
=
=
=
600  
±15  
2
V
V
Ω
125 °C  
150 °C  
600  
±15  
400  
V
V
A
125 °C  
150 °C  
Tj:  
Tj:  
Copyright Vincotech  
17  
19 Jul. 2022 / Revision 2  
30-FT10NIA400S702-LP59F04  
datasheet  
Buck Switching Characteristics  
figure 22.  
IGBT  
figure 23.  
IGBT  
Typical switching times as a function of collector current  
Typical switching times as a function of IGBT turn on gate resistor  
t = f(IC)  
t = f(Rg)  
0
10  
0
10  
td(on)  
td(off)  
td(on)  
td(off)  
-1  
10  
tr  
tf  
-1  
10  
tr  
tf  
-2  
10  
-3  
10  
-2  
10  
0
100  
200  
300  
400  
500  
600  
700  
800  
IC(A)  
0
1
2
3
4
5
6
7
8
9
Rg(Ω)  
With an inductive load at  
With an inductive load at  
Tj =  
Tj =  
150  
600  
±15  
2
°C  
V
150  
600  
±15  
400  
°C  
V
VCE  
=
=
=
=
VCE  
=
=
=
VGE  
Rgon  
Rgoff  
VGE  
IC  
V
V
Ω
Ω
A
2
figure 24.  
FWD  
figure 25.  
FWD  
Typical reverse recovery time as a function of collector current  
Typical reverse recovery time as a function of IGBT turn on gate resistor  
trr = f(IC)  
trr = f(Rgon)  
0,0225  
0,0200  
0,0175  
0,0150  
0,0125  
0,0100  
0,0075  
0,0050  
0,0025  
0,0000  
0,0225  
0,0200  
0,0175  
0,0150  
0,0125  
0,0100  
0,0075  
0,0050  
0,0025  
0,0000  
trr  
trr  
trr  
trr  
trr  
trr  
0
100  
200  
300  
400  
500  
600  
700  
800  
0
1
2
3
4
5
6
7
8
9
IC(A)  
Rgon(Ω)  
With an inductive load at  
With an inductive load at  
25 °C  
25 °C  
VCE  
VGE  
Rgon  
=
=
=
VCE  
VGE  
IC  
=
=
=
600  
±15  
2
V
V
Ω
125 °C  
150 °C  
600  
±15  
400  
V
V
A
125 °C  
150 °C  
Tj:  
Tj:  
Copyright Vincotech  
18  
19 Jul. 2022 / Revision 2  
30-FT10NIA400S702-LP59F04  
datasheet  
Buck Switching Characteristics  
figure 26.  
FWD  
figure 27.  
FWD  
Typical recovered charge as a function of collector current  
Typical recovered charge as a function of IGBT turn on gate resistor  
Qr = f(IC)  
Qr = f(Rgon)  
1,2  
1,0  
0,8  
0,6  
0,4  
0,2  
0,0  
1,75  
1,50  
1,25  
1,00  
0,75  
0,50  
0,25  
0,00  
Qr  
Qr  
Qr  
Qr  
Qr  
Qr  
0
100  
200  
300  
400  
500  
600  
700  
800  
0
1
2
3
4
5
6
7
8
9
IC(A)  
Rgon(Ω)  
With an inductive load at  
With an inductive load at  
25 °C  
25 °C  
VCE  
VGE  
Rgon  
=
=
=
VCE  
VGE  
IC  
=
=
=
600  
±15  
2
V
V
Ω
125 °C  
150 °C  
600  
±15  
400  
V
V
A
125 °C  
150 °C  
Tj:  
Tj:  
figure 28.  
FWD  
figure 29.  
FWD  
Typical peak reverse recovery current as a function of collector current  
Typical peak reverse recovery current as a function of IGBT turn on gate resistor  
IRM = f(IC)  
IRM = f(Rgon)  
100  
80  
60  
40  
20  
0
150  
125  
100  
75  
IRM  
IRM  
IRM  
50  
IRM  
IRM  
IRM  
25  
0
0
100  
200  
300  
400  
500  
600  
700  
800  
0
1
2
3
4
5
6
7
8
9
IC(A)  
Rgon(Ω)  
With an inductive load at  
With an inductive load at  
25 °C  
25 °C  
VCE  
VGE  
Rgon  
=
=
=
VCE  
VGE  
IC  
=
=
=
600  
±15  
2
V
V
Ω
125 °C  
150 °C  
600  
±15  
400  
V
V
A
125 °C  
150 °C  
Tj:  
Tj:  
Copyright Vincotech  
19  
19 Jul. 2022 / Revision 2  
30-FT10NIA400S702-LP59F04  
datasheet  
Buck Switching Characteristics  
figure 30.  
FWD  
figure 31.  
FWD  
Typical rate of fall of forward and reverse recovery current as a function of collector current  
Typical rate of fall of forward and reverse recovery current as a function of turn on gate resistor  
diF/dt, dirr/dt = f(IC)  
diF/dt, dirr/dt = f(Rgon)  
17500  
25000  
20000  
15000  
10000  
5000  
0
diF/dt ‒ ‒ ‒ ‒ ‒  
diF/dt ‒ ‒ ‒ ‒ ‒  
dirr/dt ──────  
dirr/dt ──────  
15000  
12500  
10000  
7500  
5000  
2500  
0
0
100  
200  
300  
400  
500  
600  
700  
800  
IC(A)  
0
1
2
3
4
5
6
7
8
9
R
gon(Ω)  
With an inductive load at  
With an inductive load at  
25 °C  
25 °C  
VCE  
VGE  
Rgon  
=
=
=
VCE  
VGE  
IC  
=
=
=
600  
±15  
2
V
V
Ω
125 °C  
150 °C  
600  
±15  
400  
V
V
A
125 °C  
150 °C  
Tj:  
Tj:  
figure 32.  
IGBT  
Reverse bias safe operating area  
IC = f(VCE  
)
900  
IC MAX  
800  
700  
600  
500  
400  
300  
200  
100  
0
0
200  
400  
600  
800  
1000  
1200  
V
CE(V)  
Tj =  
At  
150  
°C  
Ω
Rgon  
Rgoff  
=
=
2
2
Ω
Copyright Vincotech  
20  
19 Jul. 2022 / Revision 2  
30-FT10NIA400S702-LP59F04  
datasheet  
Boost Switching Characteristics  
figure 33.  
IGBT  
figure 34.  
IGBT  
Typical switching energy losses as a function of collector current  
Typical switching energy losses as a function of IGBT turn on gate resistor  
E = f(IC)  
E = f(Rg)  
125  
100  
75  
50  
25  
0
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
Eoff  
Eoff  
Eoff  
Eoff  
Eoff  
Eoff  
Eon  
Eon  
Eon  
Eon  
Eon  
Eon  
0
100  
200  
300  
400  
500  
600  
700  
800  
IC(A)  
0
1
2
3
4
5
6
7
8
9
Rg(Ω)  
With an inductive load at  
With an inductive load at  
25 °C  
25 °C  
VCE  
VGE  
=
=
=
=
VCE  
VGE  
IC  
=
=
=
600  
±15  
2
V
V
Ω
Ω
125 °C  
150 °C  
600  
±15  
400  
V
V
A
125 °C  
150 °C  
Tj:  
Tj:  
Rgon  
Rgoff  
2
figure 35.  
FWD  
figure 36.  
FWD  
Typical reverse recovered energy loss as a function of collector current  
Typical reverse recovered energy loss as a function of IGBT turn on gate resistor  
Erec = f(IC)  
Erec = f(Rg)  
12,5  
10,0  
7,5  
12  
10  
8
Erec  
Erec  
Erec  
Erec  
6
5,0  
4
Erec  
2,5  
Erec  
2
0,0  
0
0
100  
200  
300  
400  
500  
600  
700  
800  
0
1
2
3
4
5
6
7
8
9
IC(A)  
Rg(Ω)  
With an inductive load at  
With an inductive load at  
25 °C  
25 °C  
VCE  
VGE  
Rgon  
=
=
=
VCE  
VGE  
IC  
=
=
=
600  
±15  
2
V
V
Ω
125 °C  
150 °C  
600  
±15  
400  
V
V
A
125 °C  
150 °C  
Tj:  
Tj:  
Copyright Vincotech  
21  
19 Jul. 2022 / Revision 2  
30-FT10NIA400S702-LP59F04  
datasheet  
Boost Switching Characteristics  
figure 37.  
IGBT  
figure 38.  
IGBT  
Typical switching times as a function of collector current  
Typical switching times as a function of IGBT turn on gate resistor  
t = f(IC)  
t = f(Rg)  
0
10  
1
10  
td(on)  
td(off)  
tf  
td(on)  
td(off)  
0
10  
tf  
-1  
10  
tr  
-1  
10  
tr  
-2  
10  
-2  
10  
0
100  
200  
300  
400  
500  
600  
700  
800  
IC(A)  
0
1
2
3
4
5
6
7
8
9
Rg(Ω)  
With an inductive load at  
With an inductive load at  
Tj =  
Tj =  
150  
600  
±15  
2
°C  
V
150  
600  
±15  
400  
°C  
V
VCE  
=
=
=
=
VCE  
=
=
=
VGE  
Rgon  
Rgoff  
VGE  
IC  
V
V
Ω
Ω
A
2
figure 39.  
FWD  
figure 40.  
FWD  
Typical reverse recovery time as a function of collector current  
Typical reverse recovery time as a function of IGBT turn on gate resistor  
trr = f(IC)  
trr = f(Rgon)  
0,30  
0,25  
0,20  
0,15  
0,10  
0,05  
0,00  
0,30  
0,25  
0,20  
0,15  
0,10  
0,05  
0,00  
trr  
trr  
trr  
trr  
trr  
trr  
0
100  
200  
300  
400  
500  
600  
700  
800  
0
1
2
3
4
5
6
7
8
9
IC(A)  
Rgon(Ω)  
With an inductive load at  
With an inductive load at  
25 °C  
25 °C  
VCE  
VGE  
Rgon  
=
=
=
VCE  
VGE  
IC  
=
=
=
600  
±15  
2
V
V
Ω
125 °C  
150 °C  
600  
±15  
400  
V
V
A
125 °C  
150 °C  
Tj:  
Tj:  
Copyright Vincotech  
22  
19 Jul. 2022 / Revision 2  
30-FT10NIA400S702-LP59F04  
datasheet  
Boost Switching Characteristics  
figure 41.  
FWD  
figure 42.  
FWD  
Typical recovered charge as a function of collector current  
Typical recovered charge as a function of IGBT turn on gate resistor  
Qr = f(IC)  
Qr = f(Rgon)  
30  
25  
20  
15  
10  
5
22,5  
20,0  
17,5  
15,0  
12,5  
10,0  
7,5  
Qr  
Qr  
Qr  
Qr  
Qr  
Qr  
5,0  
2,5  
0
0,0  
0
100  
200  
300  
400  
500  
600  
700  
800  
0
1
2
3
4
5
6
7
8
9
IC(A)  
Rgon(Ω)  
With an inductive load at  
With an inductive load at  
25 °C  
25 °C  
VCE  
VGE  
Rgon  
=
=
=
VCE  
VGE  
IC  
=
=
=
600  
±15  
2
V
V
Ω
125 °C  
150 °C  
600  
±15  
400  
V
V
A
125 °C  
150 °C  
Tj:  
Tj:  
figure 43.  
FWD  
figure 44.  
FWD  
Typical peak reverse recovery current as a function of collector current  
Typical peak reverse recovery current as a function of IGBT turn on gate resistor  
IRM = f(IC)  
IRM = f(Rgon)  
350  
300  
250  
200  
150  
100  
50  
350  
300  
250  
200  
150  
100  
50  
IRM  
IRM  
IRM  
IRM  
IRM  
IRM  
0
0
0
100  
200  
300  
400  
500  
600  
700  
800  
0
1
2
3
4
5
6
7
8
9
IC(A)  
Rgon(Ω)  
With an inductive load at  
With an inductive load at  
25 °C  
25 °C  
VCE  
VGE  
Rgon  
=
=
=
VCE  
VGE  
IC  
=
=
=
600  
±15  
2
V
V
Ω
125 °C  
150 °C  
600  
±15  
400  
V
V
A
125 °C  
150 °C  
Tj:  
Tj:  
Copyright Vincotech  
23  
19 Jul. 2022 / Revision 2  
30-FT10NIA400S702-LP59F04  
datasheet  
Boost Switching Characteristics  
figure 45.  
FWD  
figure 46.  
FWD  
Typical rate of fall of forward and reverse recovery current as a function of collector current  
Typical rate of fall of forward and reverse recovery current as a function of turn on gate resistor  
diF/dt, dirr/dt = f(IC)  
diF/dt, dirr/dt = f(Rgon)  
15000  
15000  
12500  
10000  
7500  
5000  
2500  
0
diF/dt ‒ ‒ ‒ ‒ ‒  
diF/dt ‒ ‒ ‒ ‒ ‒  
dirr/dt ──────  
dirr/dt ──────  
12500  
10000  
7500  
5000  
2500  
0
0
100  
200  
300  
400  
500  
600  
700  
800  
IC(A)  
0
1
2
3
4
5
6
7
8
9
R
gon(Ω)  
With an inductive load at  
With an inductive load at  
25 °C  
25 °C  
VCE  
VGE  
Rgon  
=
=
=
VCE  
VGE  
IC  
=
=
=
600  
±15  
2
V
V
Ω
125 °C  
150 °C  
600  
±15  
400  
V
V
A
125 °C  
150 °C  
Tj:  
Tj:  
figure 47.  
IGBT  
Reverse bias safe operating area  
IC = f(VCE  
)
900  
IC MAX  
800  
700  
600  
500  
400  
300  
200  
100  
0
0
200  
400  
600  
800  
1000  
1200  
V
CE(V)  
Tj =  
At  
150  
°C  
Ω
Rgon  
Rgoff  
=
=
2
2
Ω
Copyright Vincotech  
24  
19 Jul. 2022 / Revision 2  
30-FT10NIA400S702-LP59F04  
datasheet  
Switching Definitions  
figure 48.  
IGBT  
figure 49.  
IGBT  
Turn-off Switching Waveforms & definition of tdoff, tEoff (ttEoff = integrating time for Eoff  
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)  
tdoff  
IC  
IC  
VGE  
VGE  
VCE  
tEoff  
VCE  
tEon  
figure 50.  
IGBT  
figure 51.  
IGBT  
Turn-off Switching Waveforms & definition of tf  
Turn-on Switching Waveforms & definition of tr  
IC  
IC  
VCE  
tr  
VCE  
tf  
Copyright Vincotech  
25  
19 Jul. 2022 / Revision 2  
30-FT10NIA400S702-LP59F04  
datasheet  
Switching Definitions  
figure 52.  
FWD  
figure 53.  
FWD  
Turn-off Switching Waveforms & definition of trr  
Turn-on Switching Waveforms & definition of tQr (tQr = integrating time for Qr)  
Qr  
IF  
IF  
fitted  
VF  
Copyright Vincotech  
26  
19 Jul. 2022 / Revision 2  
30-FT10NIA400S702-LP59F04  
datasheet  
Ordering Code  
Marking  
Version  
Ordering Code  
Without thermal paste  
30-FT10NIA400S702-LP59F04  
30-FT10NIA400S702-LP59F04-/3/  
With thermal paste (3,4 W/mK, PSX-P7)  
Name  
Date code  
UL & VIN  
Lot  
Serial  
Text  
NN-NNNNNNNNNNNNNN-  
TTTTTTVV  
WWYY  
UL VIN  
LLLLL  
SSSS  
Type&Ver  
Lot number  
Serial  
Date code  
Datamatrix  
TTTTTTTVV  
LLLLL  
SSSS  
WWYY  
Outline  
Pin table [mm]  
Pin  
1
X
Y
0
Function  
DC-  
70,9  
68,2  
65,5  
62,8  
60,1  
70,9  
67,85  
48,8  
46,1  
43,4  
40,7  
38  
2
0
DC-  
3
0
DC-  
4
0
DC-  
5
0
DC-  
6
10,8  
10,8  
0
S12  
7
G12  
8
GND1  
GND1  
GND1  
GND1  
GND1  
GND2  
GND2  
GND2  
GND2  
GND2  
S11  
9
0
10  
11  
12  
13  
14  
15  
16  
17  
18  
19  
20  
21  
22  
23  
24  
25  
26  
27  
28  
29  
30  
31  
32  
33  
34  
35  
36  
37  
38  
39  
40  
41  
42  
0
0
0
32,9  
30,2  
27,5  
24,8  
22,1  
19,35  
16,3  
10,8  
8,1  
0
0
0
0
0
9,1  
9,1  
0
G11  
DC+  
DC+  
DC+  
DC+  
DC+  
P
0
5,4  
0
2,7  
0
0
0
19,75  
0
18,7  
36,9  
36,9  
35,95  
32,35  
36,9  
36,9  
36,9  
36,9  
36,9  
36,9  
36,9  
36,9  
36,9  
36,9  
20,7  
20,7  
19,35  
Therm1  
Therm2  
S13  
3
12,2  
12,15  
22,2  
24,9  
27,6  
30,3  
33  
G13  
Ph2  
Ph2  
Ph2  
Ph2  
Ph2  
37,9  
40,6  
43,3  
46  
Ph1  
Ph1  
Ph1  
Ph1  
48,7  
52,3  
49,1  
45,55  
Ph1  
G14  
S14  
N
Copyright Vincotech  
27  
19 Jul. 2022 / Revision 2  
30-FT10NIA400S702-LP59F04  
datasheet  
Pinout  
DC+  
20,21,22,23,24  
T11  
D41  
G11  
19  
S11  
18  
P
25  
T13  
D11  
D43  
G13  
29  
S13  
28  
Ph2  
GND2  
13,14,15,16,17  
30,31,32,33,34  
Ph1  
GND1  
8,9,10,11,12  
35,36,37,38,39  
T14  
D12  
D44  
G14  
40  
S14  
41  
N
42  
T12  
D42  
G12  
7
Rt  
S12  
6
DC-  
1,2,3,4,5  
Therm1  
26  
Therm2  
27  
Identification  
Component  
Voltage  
950 V  
Current  
Function  
Comment  
ID  
T11, T12  
D11, D12  
T13, T14  
D42, D41  
D43, D44  
Rt  
IGBT  
FWD  
IGBT  
FWD  
FWD  
NTC  
400 A  
100 A  
400 A  
200 A  
200 A  
Buck Switch  
Buck Diode  
1200 V  
950 V  
950 V  
950 V  
Boost Switch  
Boost Diode  
Boost Sw. Inv. Diode  
Thermistor  
Copyright Vincotech  
28  
19 Jul. 2022 / Revision 2  
30-FT10NIA400S702-LP59F04  
datasheet  
Packaging instruction  
Handling instruction  
Standard packaging quantity (SPQ) 36  
>SPQ  
Standard  
<SPQ  
Sample  
Handling instructions for flow 2 packages see vincotech.com website.  
Package data  
Package data for flow 2 packages see vincotech.com website.  
Vincotech thermistor reference  
See Vincotech thermistor reference table at vincotech.com website.  
UL recognition and file number  
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.  
Document No.:  
Date:  
Modification:  
Pages  
30-FT10NIA400S702-LP59F04-D1-14  
30-FT10NIA400S702-LP59F04-D2-14  
27 Aug. 2020  
19 Jul. 2022  
Extend current range of dynamic characteristic after design  
update  
DISCLAIMER  
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to  
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations  
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,  
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said  
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons  
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine  
the suitability of the information and the product for reader’s intended use.  
LIFE SUPPORT POLICY  
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval  
of Vincotech.  
As used herein:  
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or  
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be  
reasonably expected to result in significant injury to the user.  
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause  
the failure of the life support device or system, or to affect its safety or effectiveness.  
Copyright Vincotech  
29  
19 Jul. 2022 / Revision 2  

相关型号:

30-FT12NIA150SH-LG09F08

Easy paralleling;High speed switching;Low switching losses
VINCOTECH

30-FT12NMA160SH02-M669F28

Easy paralleling;High speed switching;Low switching losses
VINCOTECH

30-FT12NMA160SH04-M669F48

Easy paralleling;High speed switching;Low switching losses
VINCOTECH

30-FT12NMA200SH-M660F08

Easy paralleling;High speed switching;Low switching losses
VINCOTECH

30-FT12NMA200SH01-M660F18

Easy paralleling;High speed switching;Low switching losses
VINCOTECH

30-GC6NLT1

GAS Engine-Generator Set
MTU

30-GC6NLT1_14

GAS GENERATOR SET
MTU

30-JC6DT4

DIESEL ENGINE-GENERATOR SET
MTU

30-JS6DT4

Diesel Engine-Generator Set
MTU

30-P2126PA050SC-L287F09Y

Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current
VINCOTECH

30-P2126PA075M7-L288F79Y

Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;Switching optimized for EMC
VINCOTECH

30-P2126PA075SC-L288F09Y

Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current
VINCOTECH