30-FT10NIA400S7-LP59F08 [VINCOTECH]
Low collector emitter saturation voltage;High speed and smooth switching;![30-FT10NIA400S7-LP59F08](http://pdffile.icpdf.com/pdf2/p00358/img/icpdf/30-FT10NIA40_2195226_icpdf.jpg)
型号: | 30-FT10NIA400S7-LP59F08 |
厂家: | ![]() |
描述: | Low collector emitter saturation voltage;High speed and smooth switching |
文件: | 总29页 (文件大小:8458K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
30-FT10NIA400S7-LP59F08
datasheet
flowNPC 2
950 V / 400 A
Topology features
flow 2 13 mm housing
● Low side Kelvin Emitter for improved switching performance
● Neutral Point Clamped Topology (I-Type)
● Split topology
● Temperature sensor
Component features
● Low collector emitter saturation voltage
● High speed and smooth switching
Housing features
● Base isolation: Al2O3
● Convex shaped baseplate for superior thermal contact
● Cu baseplate
Schematic
● Thermo-mechanical push-and-pull force relief
● Solder pin
Target applications
● Solar Inverters
Types
● 30-FT10NIA400S7-LP59F08
Copyright Vincotech
1
31 Mar. 2023 / Revision 4
30-FT10NIA400S7-LP59F08
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
Buck Switch
VCES
Collector-emitter voltage
950
259
800
457
±20
175
V
A
IC
Collector current (DC current)
Repetitive peak collector current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
ICRM
tp limited by Tjmax
Tj = Tjmax
A
Ptot
W
V
VGES
Gate-emitter voltage
Tjmax
Maximum junction temperature
°C
Buck Diode
VRRM
Peak repetitive reverse voltage
1200
110
V
A
IF
Forward current (DC current)
Surge (non-repetitive) forward current
Surge current capability
Tj = Tjmax
Ts = 80 °C
Tj = 150 °C
Ts = 80 °C
IFSM
I2t
715
A
Single Half Sine Wave,
tp = 10 ms
2550
224
A2s
W
°C
Ptot
Total power dissipation
Tj = Tjmax
Tjmax
Maximum junction temperature
175
Boost Switch
VCES
Collector-emitter voltage
950
328
800
383
±20
175
V
A
IC
Collector current (DC current)
Repetitive peak collector current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
ICRM
tp limited by Tjmax
Tj = Tjmax
A
Ptot
W
V
VGES
Gate-emitter voltage
Tjmax
Maximum junction temperature
°C
Copyright Vincotech
2
31 Mar. 2023 / Revision 4
30-FT10NIA400S7-LP59F08
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
Boost Diode
VRRM
Peak repetitive reverse voltage
950
106
400
188
175
V
A
IF
Forward current (DC current)
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
IFRM
tp limited by Tjmax
Tj = Tjmax
A
Ptot
W
°C
Tjmax
Maximum junction temperature
Boost Sw. Inv. Diode
VRRM
Peak repetitive reverse voltage
950
106
400
188
175
V
A
IF
Forward current (DC current)
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
IFRM
tp limited by Tjmax
Tj = Tjmax
A
Ptot
W
°C
Tjmax
Maximum junction temperature
Module Properties
Thermal Properties
Tstg
Tjop
Storage temperature
-40…+125
°C
°C
Operation temperature under switching
condition
-40…+(Tjmax - 25)
Isolation Properties
Isolation voltage
Creepage distance
Clearance
Visol
DC Test Voltage*
tp = 2 s
6000
>12,7
>12,7
≥ 600
V
mm
mm
Comparative Tracking Index
*100 % tested in production
CTI
Copyright Vincotech
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31 Mar. 2023 / Revision 4
30-FT10NIA400S7-LP59F08
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Buck Switch
Static
VGE(th)
Gate-emitter threshold voltage
VCE = VGE
0,00668 25
25
4,35
5,1
5,85
V
V
1,67
1,94
2,01
2,35(1)
VCEsat
Collector-emitter saturation voltage
15
400
125
150
ICES
IGES
rg
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
0
950
0
25
8
µA
nA
Ω
20
25
400
0,375
26000
556
Cies
Coes
Cres
Qg
pF
pF
pF
nC
Output capacitance
f = 100 kHz
0
25
25
25
Reverse transfer capacitance
Gate charge
80
±15
0
920
Thermal
λpaste = 3,4 W/mK
(PSX)
Thermal resistance junction to sink(2)
Dynamic
0,21
K/W
Rth(j-s)
25
139,85
141,27
141,53
27,94
29,79
30,14
122,56
146,8
153,43
27,45
45,51
51,93
9,42
td(on)
Turn-on delay time
Rise time
125
150
25
ns
ns
tr
125
150
25
Rgon = 2 Ω
Rgoff = 2 Ω
td(off)
Turn-off delay time
Fall time
125
150
25
ns
±15
600
400
tf
125
150
25
ns
QrFWD=0,975 µC
QrFWD=1,01 µC
QrFWD=1,07 µC
Eon
Turn-on energy (per pulse)
Turn-off energy (per pulse)
125
150
25
9,56
mWs
mWs
9,69
10,38
17,96
20,25
Eoff
125
150
Copyright Vincotech
4
31 Mar. 2023 / Revision 4
30-FT10NIA400S7-LP59F08
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Buck Diode
Static
25
1,44
1,71
1,81
1
1,6(1)
400
VF
IR
Forward voltage
100
125
150
25
V
Reverse leakage current
Thermal
Vr = 1200 V
µA
150
70
λpaste = 3,4 W/mK
(PSX)
Thermal resistance junction to sink(2)
Dynamic
0,42
K/W
Rth(j-s)
25
89,49
92,42
93,12
18,47
18,7
IRM
Peak recovery current
125
150
25
A
trr
Reverse recovery time
125
150
25
ns
19,91
0,975
1,01
di/dt=8622 A/µs
di/dt=9063 A/µs
di/dt=9748 A/µs
Qr
Recovered charge
±15
600
400
125
150
25
μC
1,07
0,2
Erec
Reverse recovered energy
Peak rate of fall of recovery current
125
150
25
0,215
0,234
13105,2
13542,13
14636,48
mWs
A/µs
(dirf/dt)max
125
150
Copyright Vincotech
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31 Mar. 2023 / Revision 4
30-FT10NIA400S7-LP59F08
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Boost Switch
Static
VGE(th)
Gate-emitter threshold voltage
VCE = VGE
0,0065
400
25
4,15
4,85
5,65
V
V
25
1,21
1,23
1,24
1,4(1)
VCEsat
Collector-emitter saturation voltage
15
125
150
ICES
IGES
rg
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
0
950
0
25
25
8
µA
nA
Ω
20
200
0,75
49200
530
Cies
Coes
Cres
Qg
pF
pF
pF
nC
Output capacitance
f = 100 kHz
0
25
25
25
Reverse transfer capacitance
Gate charge
220
±15
0
4100
Thermal
λpaste = 3,4 W/mK
(PSX)
Thermal resistance junction to sink(2)
Dynamic
0,25
K/W
Rth(j-s)
25
350,79
357,58
359,52
33,96
37,07
38,17
323,89
373,74
386,34
263,26
364,29
383,57
8,2
td(on)
Turn-on delay time
Rise time
125
150
25
ns
ns
tr
125
150
25
Rgon = 2 Ω
Rgoff = 2 Ω
td(off)
Turn-off delay time
Fall time
125
150
25
ns
±15
600
400
tf
125
150
25
ns
QrFWD=6,17 µC
QrFWD=15,31 µC
QrFWD=18,06 µC
Eon
Turn-on energy (per pulse)
Turn-off energy (per pulse)
125
150
25
10,02
10,86
50,11
71,74
76,66
mWs
mWs
Eoff
125
150
Copyright Vincotech
6
31 Mar. 2023 / Revision 4
30-FT10NIA400S7-LP59F08
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Boost Diode
Static
25
2,1
2,64
2,44
2,36
2,8(1)
VF
IR
Forward voltage
200
125
150
V
Reverse leakage current
Thermal
Vr = 950 V
25
8
µA
λpaste = 3,4 W/mK
(PSX)
Thermal resistance junction to sink(2)
Dynamic
0,51
K/W
Rth(j-s)
25
209,43
261,92
279,24
56,49
164,87
182,42
6,17
IRM
Peak recovery current
125
150
25
A
trr
Reverse recovery time
125
150
25
ns
di/dt=10226 A/µs
di/dt=9659 A/µs
di/dt=9779 A/µs
Qr
Recovered charge
±15
600
400
125
150
25
15,31
18,06
2,5
μC
Erec
Reverse recovered energy
Peak rate of fall of recovery current
125
150
25
6,62
mWs
A/µs
7,85
7421,55
7019,14
6599,04
(dirf/dt)max
125
150
Copyright Vincotech
7
31 Mar. 2023 / Revision 4
30-FT10NIA400S7-LP59F08
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Boost Sw. Inv. Diode
Static
25
2,1
2,64
2,44
2,36
2,8(1)
VF
IR
Forward voltage
200
125
150
V
Reverse leakage current
Thermal
Vr = 950 V
25
8
µA
λpaste = 3,4 W/mK
(PSX)
Thermal resistance junction to sink(2)
0,51
K/W
Rth(j-s)
Thermistor
Static
R
ΔR/R
P
Rated resistance
Deviation of R100
Power dissipation
Power dissipation constant
B-value
25
22
kΩ
%
R100 = 1484 Ω
100
25
-5
5
130
1,5
mW
mW/K
K
d
25
B(25/50)
Tol. ±1 %
Tol. ±1 %
3962
4000
B(25/100)
B-value
K
Vincotech Thermistor Reference
I
(1)
Value at chip level
(2)
Only valid with pre-applied Vincotech thermal interface material.
Copyright Vincotech
8
31 Mar. 2023 / Revision 4
30-FT10NIA400S7-LP59F08
datasheet
Buck Switch Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical output characteristics
Typical output characteristics
IC = f(VCE
)
IC = f(VCE)
1000
1250
VGE
:
7 V
8 V
9 V
1000
750
500
250
0
10 V
11 V
12 V
13 V
14 V
15 V
16 V
17 V
750
500
250
0
0,0
0,5
1,0
1,5
2,0
2,5
3,0
3,5
4,0
0,0
0,5
1,0
1,5
2,0
2,5
3,0
3,5
4,0
V
CE(V)
VCE(V)
tp
=
=
tp
=
250
15
μs
V
250
150
μs
°C
25 °C
VGE
Tj =
125 °C
150 °C
Tj:
VGE from 7 V to 17 V in steps of 1 V
figure 3.
IGBT
figure 4.
IGBT
Typical transfer characteristics
Transient thermal impedance as a function of pulse width
IC = f(VGE
)
Zth(j-s) = f(tp)
0
400
10
-1
300
200
100
0
10
-2
10
0,5
0,2
0,1
-3
10
0,05
0,02
0,01
0,005
0
-4
10
-5
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
0
2
4
6
8
10
10
10
tp(s)
V
GE(V)
tp
=
=
250
10
μs
V
D =
tp / T
0,208
25 °C
VCE
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
IGBT thermal model values
R (K/W)
τ (s)
5,44E-02
4,87E-02
6,94E-02
2,76E-02
7,97E-03
2,48E+00
4,00E-01
7,27E-02
1,58E-02
9,66E-04
Copyright Vincotech
9
31 Mar. 2023 / Revision 4
30-FT10NIA400S7-LP59F08
datasheet
Buck Switch Characteristics
figure 5.
IGBT
Safe operating area
IC = f(VCE
)
1000
100
10
1
0,1
0,01
1
10
100
1000
10000
V
CE(V)
D =
single pulse
Ts =
80
15
°C
V
VGE
=
Tj =
Tjmax
Copyright Vincotech
10
31 Mar. 2023 / Revision 4
30-FT10NIA400S7-LP59F08
datasheet
Buck Diode Characteristics
figure 6.
FWD
figure 7.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
0
300
250
200
150
100
50
10
-1
10
-2
10
0,5
0,2
0,1
-3
10
0,05
0,02
0,01
0,005
0
-4
0
0,0
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0,5
1,0
1,5
2,0
2,5
3,0
3,5
4,0
4,5
10
10
10
10
tp(s)
VF(V)
tp
=
250
μs
D =
tp / T
0,423
25 °C
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
FWD thermal model values
R (K/W)
τ (s)
5,25E-02
7,28E-02
2,02E-01
6,79E-02
2,76E-02
3,95E+00
6,10E-01
6,87E-02
1,01E-02
1,12E-03
Copyright Vincotech
11
31 Mar. 2023 / Revision 4
30-FT10NIA400S7-LP59F08
datasheet
Boost Switch Characteristics
figure 8.
IGBT
figure 9.
IGBT
Typical output characteristics
Typical output characteristics
IC = f(VCE
)
IC = f(VCE)
1000
1000
VGE
:
7 V
8 V
9 V
10 V
11 V
12 V
13 V
14 V
15 V
16 V
17 V
750
500
250
0
750
500
250
0
0,00
0,25
0,50
0,75
1,00
1,25
1,50
1,75
2,00
0,00
0,25
0,50
0,75
1,00
1,25
1,50
1,75
2,00
V
CE(V)
VCE(V)
tp
=
=
tp
=
250
15
μs
V
250
150
μs
°C
25 °C
VGE
Tj =
125 °C
150 °C
Tj:
VGE from 7 V to 17 V in steps of 1 V
figure 10.
IGBT
figure 11.
IGBT
Typical transfer characteristics
Transient thermal impedance as a function of pulse width
IC = f(VGE
)
Zth(j-s) = f(tp)
0
400
10
-1
10
300
200
100
0
-2
10
-3
10
0,5
0,2
0,1
-4
0,05
0,02
0,01
0,005
0
10
-5
10
-5
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
0
1
2
3
4
5
6
7
8
10
10
tp(s)
V
GE(V)
tp
=
=
250
10
μs
V
D =
tp / T
0,248
25 °C
VCE
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
IGBT thermal model values
R (K/W)
τ (s)
3,15E-02
5,84E-02
7,49E-02
7,33E-02
1,00E-02
4,33E+00
8,97E-01
1,46E-01
3,02E-02
1,61E-03
Copyright Vincotech
12
31 Mar. 2023 / Revision 4
30-FT10NIA400S7-LP59F08
datasheet
Boost Switch Characteristics
figure 12.
IGBT
Safe operating area
IC = f(VCE
)
1000
100
10
1
0,1
0,01
1
10
100
1000
10000
V
CE(V)
D =
single pulse
Ts =
80
15
°C
V
VGE
=
Tj =
Tjmax
Copyright Vincotech
13
31 Mar. 2023 / Revision 4
30-FT10NIA400S7-LP59F08
datasheet
Boost Diode Characteristics
figure 13.
FWD
figure 14.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
0
600
500
400
300
200
100
0
10
-1
10
-2
10
0,5
0,2
0,1
-3
10
0,05
0,02
0,01
0,005
0
-4
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0
1
2
3
4
5
10
10
10
10
tp(s)
VF(V)
tp
=
250
μs
D =
tp / T
0,507
25 °C
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
FWD thermal model values
R (K/W)
τ (s)
5,51E-02
1,05E-01
2,42E-01
7,71E-02
2,81E-02
2,05E+00
2,60E-01
4,82E-02
1,01E-02
1,04E-03
Copyright Vincotech
14
31 Mar. 2023 / Revision 4
30-FT10NIA400S7-LP59F08
datasheet
Boost Sw. Inv. Diode Characteristics
figure 15.
FWD
figure 16.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
0
600
500
400
300
200
100
0
10
-1
10
-2
10
0,5
0,2
0,1
-3
10
0,05
0,02
0,01
0,005
0
-4
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0
1
2
3
4
5
10
10
10
10
tp(s)
VF(V)
tp
=
250
μs
D =
tp / T
0,507
25 °C
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
FWD thermal model values
R (K/W)
τ (s)
5,51E-02
1,05E-01
2,42E-01
7,71E-02
2,81E-02
2,05E+00
2,60E-01
4,82E-02
1,01E-02
1,04E-03
Copyright Vincotech
15
31 Mar. 2023 / Revision 4
30-FT10NIA400S7-LP59F08
datasheet
Thermistor Characteristics
figure 17.
Thermistor
Typical NTC characteristic as function of temperature
RT = f(T)
25000
20000
15000
10000
5000
0
20
40
60
80
100
120
140
T(°C)
Copyright Vincotech
16
31 Mar. 2023 / Revision 4
30-FT10NIA400S7-LP59F08
datasheet
Buck Switching Characteristics
figure 18.
IGBT
figure 19.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of IGBT turn on gate resistor
E = f(IC)
E = f(Rg)
30
25
20
15
10
5
40
35
30
25
20
15
10
5
Eoff
Eoff
Eon
Eon
Eon
Eoff
Eoff
Eon
Eoff
Eon
Eon
Eoff
0
0
0
100
200
300
400
500
600
0
1
2
3
4
5
6
7
8
9
IC(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
=
=
=
=
VCE
VGE
IC
=
=
=
600
±15
2
V
V
Ω
Ω
125 °C
150 °C
600
±15
400
V
V
A
125 °C
150 °C
Tj:
Tj:
Rgon
Rgoff
2
figure 20.
FWD
figure 21.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of IGBT turn on gate resistor
Erec = f(IC)
Erec = f(Rg)
0,30
0,25
0,20
0,15
0,10
0,05
0,00
0,7
0,6
0,5
0,4
0,3
0,2
0,1
0,0
Erec
Erec
Erec
Erec
Erec
Erec
0
100
200
300
400
500
600
0
1
2
3
4
5
6
7
8
9
IC(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
2
V
V
Ω
125 °C
150 °C
600
±15
400
V
V
A
125 °C
150 °C
Tj:
Tj:
Copyright Vincotech
17
31 Mar. 2023 / Revision 4
30-FT10NIA400S7-LP59F08
datasheet
Buck Switching Characteristics
figure 22.
IGBT
figure 23.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of IGBT turn on gate resistor
t = f(IC)
t = f(Rg)
0
10
0
10
td(on)
td(off)
td(on)
td(off)
-1
10
tf
tr
-1
10
tr
tf
-2
10
-3
10
-2
10
0
100
200
300
400
500
600
0
1
2
3
4
5
6
7
8
9
IC(A)
Rg(Ω)
With an inductive load at
With an inductive load at
Tj =
Tj =
150
600
±15
2
°C
V
150
600
±15
400
°C
V
VCE
=
=
=
=
VCE
=
=
=
VGE
Rgon
Rgoff
VGE
IC
V
V
Ω
Ω
A
2
figure 24.
FWD
figure 25.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn on gate resistor
trr = f(IC)
trr = f(Rgon)
0,030
0,025
0,020
0,015
0,010
0,005
0,000
0,030
0,025
0,020
0,015
0,010
0,005
0,000
trr
trr
trr
trr
trr
trr
0
100
200
300
400
500
600
0
1
2
3
4
5
6
7
8
9
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
2
V
V
Ω
125 °C
150 °C
600
±15
400
V
V
A
125 °C
150 °C
Tj:
Tj:
Copyright Vincotech
18
31 Mar. 2023 / Revision 4
30-FT10NIA400S7-LP59F08
datasheet
Buck Switching Characteristics
figure 26.
FWD
figure 27.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of IGBT turn on gate resistor
Qr = f(IC)
Qr = f(Rgon)
1,50
1,25
1,00
0,75
0,50
0,25
0,00
2,00
1,75
1,50
1,25
1,00
0,75
0,50
0,25
0,00
Qr
Qr
Qr
Qr
Qr
Qr
0
100
200
300
400
500
600
0
1
2
3
4
5
6
7
8
9
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
2
V
V
Ω
125 °C
150 °C
600
±15
400
V
V
A
125 °C
150 °C
Tj:
Tj:
figure 28.
FWD
figure 29.
FWD
Typical peak reverse recovery current as a function of collector current
Typical peak reverse recovery current as a function of IGBT turn on gate resistor
IRM = f(IC)
IRM = f(Rgon)
100
80
60
40
20
0
150
125
100
75
IRM
IRM
IRM
50
IRM
IRM
IRM
25
0
0
100
200
300
400
500
600
0
1
2
3
4
5
6
7
8
9
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
2
V
V
Ω
125 °C
150 °C
600
±15
400
V
V
A
125 °C
150 °C
Tj:
Tj:
Copyright Vincotech
19
31 Mar. 2023 / Revision 4
30-FT10NIA400S7-LP59F08
datasheet
Buck Switching Characteristics
figure 30.
FWD
figure 31.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of turn on gate resistor
diF/dt, dirr/dt = f(IC)
diF/dt, dirr/dt = f(Rgon)
17500
30000
25000
20000
15000
10000
5000
0
diF/dt ‒ ‒ ‒ ‒ ‒
diF/dt ‒ ‒ ‒ ‒ ‒
dirr/dt ──────
dirr/dt ──────
15000
12500
10000
7500
5000
2500
0
0
100
200
300
400
500
600
IC(A)
0
1
2
3
4
5
6
7
8
9
R
gon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
2
V
V
Ω
125 °C
150 °C
600
±15
400
V
V
A
125 °C
150 °C
Tj:
Tj:
figure 32.
IGBT
Reverse bias safe operating area
IC = f(VCE
)
900
IC MAX
800
700
600
500
400
300
200
100
0
0
200
400
600
800
1000
1200
V
CE(V)
Tj =
At
150
°C
Ω
Rgon
Rgoff
=
=
2
2
Ω
Copyright Vincotech
20
31 Mar. 2023 / Revision 4
30-FT10NIA400S7-LP59F08
datasheet
Boost Switching Characteristics
figure 33.
IGBT
figure 34.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of IGBT turn on gate resistor
E = f(IC)
E = f(Rg)
125
100
75
50
25
0
90
80
70
60
50
40
30
20
10
0
Eoff
Eoff
Eoff
Eoff
Eoff
Eoff
Eon
Eon
Eon
Eon
Eon
Eon
0
100
200
300
400
500
600
700
800
IC(A)
0
1
2
3
4
5
6
7
8
9
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
=
=
=
=
VCE
VGE
IC
=
=
=
600
±15
2
V
V
Ω
Ω
125 °C
150 °C
600
±15
400
V
V
A
125 °C
150 °C
Tj:
Tj:
Rgon
Rgoff
2
figure 35.
FWD
figure 36.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of IGBT turn on gate resistor
Erec = f(IC)
Erec = f(Rg)
12,5
10,0
7,5
12
10
8
Erec
Erec
Erec
Erec
6
5,0
4
Erec
2,5
Erec
2
0,0
0
0
100
200
300
400
500
600
700
800
0
1
2
3
4
5
6
7
8
9
IC(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
2
V
V
Ω
125 °C
150 °C
600
±15
400
V
V
A
125 °C
150 °C
Tj:
Tj:
Copyright Vincotech
21
31 Mar. 2023 / Revision 4
30-FT10NIA400S7-LP59F08
datasheet
Boost Switching Characteristics
figure 37.
IGBT
figure 38.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of IGBT turn on gate resistor
t = f(IC)
t = f(Rg)
0
10
1
10
td(on)
td(off)
tf
td(on)
td(off)
0
10
tf
-1
10
tr
-1
10
tr
-2
10
-2
10
0
100
200
300
400
500
600
700
800
IC(A)
0
1
2
3
4
5
6
7
8
9
Rg(Ω)
With an inductive load at
With an inductive load at
Tj =
Tj =
150
600
±15
2
°C
V
150
600
±15
400
°C
V
VCE
=
=
=
=
VCE
=
=
=
VGE
Rgon
Rgoff
VGE
IC
V
V
Ω
Ω
A
2
figure 39.
FWD
figure 40.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn on gate resistor
trr = f(IC)
trr = f(Rgon)
0,30
0,25
0,20
0,15
0,10
0,05
0,00
0,30
0,25
0,20
0,15
0,10
0,05
0,00
trr
trr
trr
trr
trr
trr
0
100
200
300
400
500
600
700
800
0
1
2
3
4
5
6
7
8
9
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
2
V
V
Ω
125 °C
150 °C
600
±15
400
V
V
A
125 °C
150 °C
Tj:
Tj:
Copyright Vincotech
22
31 Mar. 2023 / Revision 4
30-FT10NIA400S7-LP59F08
datasheet
Boost Switching Characteristics
figure 41.
FWD
figure 42.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of IGBT turn on gate resistor
Qr = f(IC)
Qr = f(Rgon)
30
25
20
15
10
5
22,5
20,0
17,5
15,0
12,5
10,0
7,5
Qr
Qr
Qr
Qr
Qr
Qr
5,0
2,5
0
0,0
0
100
200
300
400
500
600
700
800
0
1
2
3
4
5
6
7
8
9
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
2
V
V
Ω
125 °C
150 °C
600
±15
400
V
V
A
125 °C
150 °C
Tj:
Tj:
figure 43.
FWD
figure 44.
FWD
Typical peak reverse recovery current as a function of collector current
Typical peak reverse recovery current as a function of IGBT turn on gate resistor
IRM = f(IC)
IRM = f(Rgon)
350
300
250
200
150
100
50
350
300
250
200
150
100
50
IRM
IRM
IRM
IRM
IRM
IRM
0
0
0
100
200
300
400
500
600
700
800
0
1
2
3
4
5
6
7
8
9
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
2
V
V
Ω
125 °C
150 °C
600
±15
400
V
V
A
125 °C
150 °C
Tj:
Tj:
Copyright Vincotech
23
31 Mar. 2023 / Revision 4
30-FT10NIA400S7-LP59F08
datasheet
Boost Switching Characteristics
figure 45.
FWD
figure 46.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of turn on gate resistor
diF/dt, dirr/dt = f(IC)
diF/dt, dirr/dt = f(Rgon)
15000
15000
12500
10000
7500
5000
2500
0
diF/dt ‒ ‒ ‒ ‒ ‒
diF/dt ‒ ‒ ‒ ‒ ‒
dirr/dt ──────
dirr/dt ──────
12500
10000
7500
5000
2500
0
0
100
200
300
400
500
600
700
800
IC(A)
0
1
2
3
4
5
6
7
8
9
R
gon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
2
V
V
Ω
125 °C
150 °C
600
±15
400
V
V
A
125 °C
150 °C
Tj:
Tj:
figure 47.
IGBT
Reverse bias safe operating area
IC = f(VCE
)
900
IC MAX
800
700
600
500
400
300
200
100
0
0
200
400
600
800
1000
1200
V
CE(V)
Tj =
At
150
°C
Ω
Rgon
Rgoff
=
=
2
2
Ω
Copyright Vincotech
24
31 Mar. 2023 / Revision 4
30-FT10NIA400S7-LP59F08
datasheet
Switching Definitions
figure 48.
IGBT
figure 49.
IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff (ttEoff = integrating time for Eoff
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)
tdoff
IC
IC
VGE
VGE
VCE
tEoff
VCE
tEon
figure 50.
IGBT
figure 51.
IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
IC
IC
VCE
tr
VCE
tf
Copyright Vincotech
25
31 Mar. 2023 / Revision 4
30-FT10NIA400S7-LP59F08
datasheet
Switching Definitions
figure 52.
FWD
figure 53.
FWD
Turn-off Switching Waveforms & definition of trr
Turn-on Switching Waveforms & definition of tQr (tQr = integrating time for Qr)
Qr
IF
IF
fitted
VF
Copyright Vincotech
26
31 Mar. 2023 / Revision 4
30-FT10NIA400S7-LP59F08
datasheet
Ordering Code
Marking
Version
Ordering Code
Without thermal paste
30-FT10NIA400S7-LP59F08
30-FT10NIA400S7-LP59F08-/3/
With thermal paste (3,4 W/mK, PSX-P7)
Name
Date code
UL & VIN
Lot
Serial
Text
NN-NNNNNNNNNNNNNN-
TTTTTTVV
WWYY
UL VIN
LLLLL
SSSS
Type&Ver
Lot number
Serial
Date code
Datamatrix
TTTTTTTVV
LLLLL
SSSS
WWYY
Outline
Pin table [mm]
Pin
1
X
Y
0
Function
DC-
70,9
68,2
65,5
62,8
60,1
70,9
67,85
48,8
46,1
43,4
40,7
38
2
0
DC-
3
0
DC-
4
0
DC-
5
0
DC-
6
10,8
10,8
0
S12
7
G12
8
GND1
GND1
GND1
GND1
GND1
GND2
GND2
GND2
GND2
GND2
S11
9
0
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
0
0
0
32,9
30,2
27,5
24,8
22,1
19,35
16,3
10,8
8,1
0
0
0
0
0
9,1
9,1
0
G11
DC+
DC+
DC+
DC+
DC+
P
0
5,4
0
2,7
0
0
0
19,75
0
18,7
36,9
36,9
35,95
32,35
36,9
36,9
36,9
36,9
36,9
36,9
36,9
36,9
36,9
36,9
20,7
20,7
19,35
Therm1
Therm2
S13
3
12,2
12,15
22,2
24,9
27,6
30,3
33
G13
Ph2
Ph2
Ph2
Ph2
Ph2
37,9
40,6
43,3
46
Ph1
Ph1
Ph1
Ph1
48,7
52,3
49,1
45,55
Ph1
G14
S14
N
Copyright Vincotech
27
31 Mar. 2023 / Revision 4
30-FT10NIA400S7-LP59F08
datasheet
Pinout
DC+
20,21,22,23,24
T11
D41
G11
19
S11
18
P
25
T13
D11
D43
G13
29
S13
28
Ph2
GND2
13,14,15,16,17
30,31,32,33,34
Ph1
GND1
8,9,10,11,12
35,36,37,38,39
T14
D12
D44
G14
40
S14
41
N
42
T12
D42
G12
7
Rt
S12
6
DC-
Therm1
26
Therm2
27
1,2,3,4,5
Identification
Component
Voltage
950 V
Current
Function
Comment
ID
T11, T12
D11, D12
T13, T14
D42, D41
D43, D44
Rt
IGBT
FWD
IGBT
FWD
FWD
NTC
400 A
100 A
400 A
200 A
200 A
Buck Switch
Buck Diode
1200 V
950 V
950 V
950 V
Boost Switch
Boost Diode
Boost Sw. Inv. Diode
Thermistor
Copyright Vincotech
28
31 Mar. 2023 / Revision 4
30-FT10NIA400S7-LP59F08
datasheet
Packaging instruction
Handling instruction
Standard packaging quantity (SPQ) 36
>SPQ
Standard
<SPQ
Sample
Handling instructions for flow 2 packages see vincotech.com website.
Package data
Package data for flow 2 packages see vincotech.com website.
Vincotech thermistor reference
See Vincotech thermistor reference table at vincotech.com website.
UL recognition and file number
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.
Document No.:
Date:
Modification:
Pages
30-FT10NIA400S7-LP59F08-D4-14
31 Mar. 2023
Change Buck Diode
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine
the suitability of the information and the product for reader’s intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval
of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or effectiveness.
Copyright Vincotech
29
31 Mar. 2023 / Revision 4
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