70-W424NIA1K2M702-LD07FP7 [VINCOTECH]
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;Switching optimized for EMC;
| 型号： | 70-W424NIA1K2M702-LD07FP7 |
| 厂家： | 
VINCOTECH |
| 描述： | Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;Switching optimized for EMC |
| 文件： | 总30页 (文件大小：8985K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
70-W424NIA1K2M702-LD07FP70
datasheet
VINcoNPC X8
1500 V / 1200 A
Features
VINco X8 12 mm housing
● NPC topology up to 2400Vdc
● High efficiency
● Low inductive package
Schematic
Target applications
● Industrial Drives
● UPS
Types
● 70-W424NIA1K2M702-LD07FP70
Copyright Vincotech
1
30 Sep. 2021 / Revision 4
70-W424NIA1K2M702-LD07FP70
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
Buck Switch
VCES
Collector-emitter voltage
1200
960
V
A
IC
Collector current (DC current)
Repetitive peak collector current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
Tj = 150 °C
ICRM
tp limited by Tjmax
Tj = Tjmax
2400
1667
±20
9,5
A
Ptot
W
V
VGES
Gate-emitter voltage
tSC
Short circuit ratings
VGE = 15 V, VCC = 800 V
µs
°C
Tjmax
Maximum junction temperature
175
Buck Diode
VRRM
Peak repetitive reverse voltage
1200
683
V
A
IF
Forward current (DC current)
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
IFRM
tp limited by Tjmax
Tj = Tjmax
2400
1038
175
A
Ptot
W
°C
Tjmax
Maximum junction temperature
Buck Sw. Protection Diode
VRRM
Peak repetitive reverse voltage
1200
68
V
A
IF
Forward current (DC current)
Surge (non-repetitive) forward current
Surge current capability
Tj = Tjmax
Ts = 80 °C
Tj = 25 °C
Ts = 80 °C
IFSM
I2t
260
336
181
175
A
Single Half Sine Wave,
tp = 10 ms
A2s
W
°C
Ptot
Total power dissipation
Tj = Tjmax
Tjmax
Maximum junction temperature
Copyright Vincotech
2
30 Sep. 2021 / Revision 4
70-W424NIA1K2M702-LD07FP70
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
Boost Switch
VCES
Collector-emitter voltage
1200
960
V
A
IC
Collector current (DC current)
Repetitive peak collector current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
Tj = 150 °C
ICRM
tp limited by Tjmax
Tj = Tjmax
2400
1667
±20
9,5
A
Ptot
W
V
VGES
Gate-emitter voltage
tSC
Short circuit ratings
VGE = 15 V, VCC = 800 V
µs
°C
Tjmax
Maximum junction temperature
175
Boost Diode
VRRM
Peak repetitive reverse voltage
1200
661
V
A
IF
Forward current (DC current)
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
IFRM
tp limited by Tjmax
Tj = Tjmax
2400
990
A
Ptot
W
°C
Tjmax
Maximum junction temperature
175
Boost Sw. Inv. Diode
VRRM
Peak repetitive reverse voltage
1200
661
V
A
IF
Forward current (DC current)
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
IFRM
tp limited by Tjmax
Tj = Tjmax
2400
990
A
Ptot
W
°C
Tjmax
Maximum junction temperature
175
Copyright Vincotech
3
30 Sep. 2021 / Revision 4
70-W424NIA1K2M702-LD07FP70
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
Boost Sw. Protection Diode
VRRM
Peak repetitive reverse voltage
Forward current (DC current)
Surge (non-repetitive) forward current
Surge current capability
1200
68
V
A
IF
IFSM
I2t
Tj = Tjmax
Ts = 80 °C
Tj = 25 °C
Ts = 80 °C
260
336
181
175
A
Single Half Sine Wave,
tp = 10 ms
A2s
W
°C
Ptot
Total power dissipation
Tj = Tjmax
Tjmax
Maximum junction temperature
Module Properties
Thermal Properties
Tstg
Tjop
Storage temperature
-40…+125
°C
°C
Operation temperature under switching
condition
-40…+(Tjmax - 25)
Isolation Properties
Isolation voltage
Creepage distance
Clearance
Visol
DC Test Voltage*
tp = 2 s
4000
>12,7
>12,7
≥ 200
V
mm
mm
Comparative Tracking Index
*100 % tested in production
CTI
Copyright Vincotech
4
30 Sep. 2021 / Revision 4
70-W424NIA1K2M702-LD07FP70
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Buck Switch
Static
VGE(th)
Gate-emitter threshold voltage
10
0,12
25
5,4
6
6,6
V
V
25
1,53
1,78
1,86
1,85(1)
VCEsat
Collector-emitter saturation voltage
15
1200
125
150
ICES
IGES
rg
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
0
1200
0
25
25
800
µA
nA
Ω
20
4000
0,375
240000
7040
Cies
Coes
Cres
Qg
pF
pF
pF
nC
Output capacitance
0
10
25
25
Reverse transfer capacitance
Gate charge
2560
VCC = 600 V
15
1200
8000
Thermal
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
0,06
K/W
25
320
315
td(on)
Turn-on delay time
Rise time
125
150
25
ns
ns
317
76
tr
125
150
25
77
77
Rgon = 0,5 Ω
Rgoff = 0,5 Ω
349
td(off)
Turn-off delay time
Fall time
125
150
25
365
ns
378
-8/16
600
1000
74,72
96,05
105,29
116,08
132,14
139,61
73,24
96,92
103,59
tf
125
150
25
ns
QrFWD=99,96 µC
QrFWD=163,06 µC
QrFWD=182,49 µC
Eon
Turn-on energy (per pulse)
Turn-off energy (per pulse)
125
150
25
mWs
mWs
Eoff
125
150
Copyright Vincotech
5
30 Sep. 2021 / Revision 4
70-W424NIA1K2M702-LD07FP70
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Buck Diode
Static
25
1,8
1,9
2,1(1)
320
VF
IR
Forward voltage
1200
125
150
V
1,89
Reverse leakage current
Thermal
Vr = 1200 V
25
µA
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
0,09
K/W
25
640,2
795,24
812,57
329,25
443,1
489,19
99,96
163,06
182,49
31,11
56,5
IRRM
Peak recovery current
125
150
25
A
trr
Reverse recovery time
125
150
25
ns
di/dt=12125 A/µs
Qr
Recovered charge
di/dt=13125 A/µs -8/16
di/dt=12093 A/µs
600
1000
125
150
25
μC
Erec
Reverse recovered energy
Peak rate of fall of recovery current
125
150
25
mWs
A/µs
64,27
2667
(dirf/dt)max
125
150
3440
3436
Copyright Vincotech
6
30 Sep. 2021 / Revision 4
70-W424NIA1K2M702-LD07FP70
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
VGE [V]
VGS [V]
Min
Max
Buck Sw. Protection Diode
Static
25
2,37
2,47
2,71(1)
VF
IR
Forward voltage
60
125
150
25
V
2,77(1)
240
Reverse leakage current
Thermal
Vr = 1200 V
µA
150
3600
0,52
7200
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
K/W
Copyright Vincotech
7
30 Sep. 2021 / Revision 4
70-W424NIA1K2M702-LD07FP70
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Boost Switch
Static
VGE(th)
Gate-emitter threshold voltage
10
0,12
25
5,4
6
6,6
V
V
25
1,53
1,78
1,86
1,85(1)
VCEsat
Collector-emitter saturation voltage
15
1200
125
150
ICES
IGES
rg
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
0
1200
0
25
25
800
µA
nA
Ω
20
4000
0,375
240000
7040
Cies
Coes
Cres
Qg
pF
pF
pF
nC
Output capacitance
0
10
25
25
Reverse transfer capacitance
Gate charge
2560
VCC = 600 V
15
1200
8000
Thermal
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
0,06
K/W
25
308
316
td(on)
Turn-on delay time
Rise time
125
150
25
ns
ns
314
76
tr
125
150
25
69
75
Rgon = 0,5 Ω
Rgoff = 0,5 Ω
351
td(off)
Turn-off delay time
Fall time
125
150
25
378
ns
390
-8/16
600
1000
76,26
93,93
104,83
105,28
123,01
131,51
72,32
96,19
103
tf
125
150
25
ns
QrFWD=98,92 µC
QrFWD=179,27 µC
QrFWD=193,41 µC
Eon
Turn-on energy (per pulse)
Turn-off energy (per pulse)
125
150
25
mWs
mWs
Eoff
125
150
Copyright Vincotech
8
30 Sep. 2021 / Revision 4
70-W424NIA1K2M702-LD07FP70
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Boost Diode
Static
25
1,8
1,9
2,1(1)
320
VF
IR
Forward voltage
1200
125
150
V
1,89
Reverse leakage current
Thermal
Vr = 1200 V
25
µA
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
0,1
K/W
25
563,68
711,9
732,24
334,56
466
IRRM
Peak recovery current
125
150
25
A
trr
Reverse recovery time
125
150
25
ns
518,02
98,92
179,27
193,41
31,65
64,47
69,26
3011
di/dt=8132 A/µs
Qr
Recovered charge
di/dt=11625 A/µs -8/16
di/dt=10500 A/µs
600
1000
125
150
25
μC
Erec
Reverse recovered energy
Peak rate of fall of recovery current
125
150
25
mWs
A/µs
(dirf/dt)max
125
150
2978
2883
Copyright Vincotech
9
30 Sep. 2021 / Revision 4
70-W424NIA1K2M702-LD07FP70
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Boost Sw. Inv. Diode
Static
25
1,8
1,9
2,1(1)
320
VF
IR
Forward voltage
1200
125
150
V
1,89
Reverse leakage current
Vr = 1200 V
25
µA
Thermal
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
0,1
K/W
Boost Sw. Protection Diode
Static
25
2,37
2,47
2,71(1)
VF
IR
Forward voltage
60
125
150
25
V
2,77(1)
240
Reverse leakage current
Thermal
Vr = 1200 V
µA
150
3600
0,52
7200
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
K/W
Copyright Vincotech
10
30 Sep. 2021 / Revision 4
70-W424NIA1K2M702-LD07FP70
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
VGE [V]
VGS [V]
Min
Max
Thermistor
Static
R
ΔR/R
P
Rated resistance
Deviation of R100
Power dissipation
Power dissipation constant
B-value
25
11
kΩ
%
R100 = 1484 Ω
100
-5
5
10
3
mW
mW/K
K
d
25
B(25/50)
Tol. ±1 %
Tol. ±1 %
3962
4000
B(25/100)
B-value
K
Vincotech Thermistor Reference
I
(1)
Value at chip level
(2)
Only valid with pre-applied Vincotech thermal interface material.
Copyright Vincotech
11
30 Sep. 2021 / Revision 4
70-W424NIA1K2M702-LD07FP70
datasheet
Buck Switch Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical output characteristics
Typical output characteristics
IC = f(VCE
)
IC = f(VCE)
3500
3500
VGE
:
7 V
8 V
3000
2500
2000
1500
1000
500
3000
2500
2000
1500
1000
500
9 V
10 V
11 V
12 V
13 V
14 V
15 V
16 V
17 V
0
0
0
1
2
3
4
5
0
1
2
3
4
5
V
CE(V)
VCE(V)
tp
=
=
tp
=
250
15
μs
V
250
150
μs
°C
25 °C
VGE
Tj =
125 °C
150 °C
Tj:
VGE from 7 V to 17 V in steps of 1 V
figure 3.
IGBT
figure 4.
IGBT
Typical transfer characteristics
Transient thermal impedance as a function of pulse width
IC = f(VGE
)
Zth(j-s) = f(tp)
-1
1000
10
-2
750
500
250
0
10
-3
10
0,5
0,2
0,1
-4
10
0,05
0,02
0,01
0,005
0
-5
10
-5
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
0,0
2,5
5,0
7,5
10,0
12,5
10
10
tp(s)
V
GE(V)
tp
=
=
250
10
μs
V
D =
tp / T
0,057
25 °C
VCE
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
IGBT thermal model values
R (K/W)
τ (s)
5,19E-03
9,87E-03
1,27E-02
1,64E-02
8,59E-03
1,84E-03
2,47E-03
5,72E+00
1,19E+00
3,03E-01
6,32E-02
2,04E-02
2,67E-03
5,00E-04
Copyright Vincotech
12
30 Sep. 2021 / Revision 4
70-W424NIA1K2M702-LD07FP70
datasheet
Buck Switch Characteristics
figure 5.
IGBT
Safe operating area
IC = f(VCE
)
10000
1000
100
10
10µs
100µs
1ms
10ms
100ms
DC
1
0,1
0,01
1
10
100
1000
10000
V
CE(V)
D =
single pulse
Ts =
80
15
°C
V
VGE
=
Tj =
Tjmax
Copyright Vincotech
13
30 Sep. 2021 / Revision 4
70-W424NIA1K2M702-LD07FP70
datasheet
Buck Diode Characteristics
figure 6.
FWD
figure 7.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
-1
3500
3000
2500
2000
1500
1000
500
10
-2
10
-3
10
0,5
0,2
0,1
0,05
0,02
0,01
0,005
0
-4
0
0,0
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0,5
1,0
μs
1,5
2,0
2,5
3,0
3,5
4,0
10
10
10
10
tp(s)
VF(V)
tp
=
250
D =
tp / T
0,092
25 °C
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
FWD thermal model values
R (K/W)
τ (s)
8,32E-03
1,58E-02
2,03E-02
2,63E-02
1,38E-02
2,95E-03
3,96E-03
5,72E+00
1,19E+00
3,03E-01
6,32E-02
2,04E-02
2,67E-03
5,00E-04
Copyright Vincotech
14
30 Sep. 2021 / Revision 4
70-W424NIA1K2M702-LD07FP70
datasheet
Buck Sw. Protection Diode Characteristics
figure 8.
FWD
figure 9.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
0
175
150
125
100
75
10
-1
10
-2
10
0,5
0,2
0,1
50
-3
10
0,05
0,02
0,01
0,005
0
25
-4
0
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0
1
2
3
4
5
10
10
10
10
tp(s)
VF(V)
tp
=
250
μs
D =
tp / T
0,525
25 °C
Tj:
125 °C
Rth(j-s) =
K/W
FWD thermal model values
R (K/W)
τ (s)
4,78E-02
9,08E-02
1,17E-01
1,51E-01
7,91E-02
1,69E-02
2,28E-02
5,72E+00
1,19E+00
3,03E-01
6,32E-02
2,04E-02
2,67E-03
5,00E-04
Copyright Vincotech
15
30 Sep. 2021 / Revision 4
70-W424NIA1K2M702-LD07FP70
datasheet
Boost Switch Characteristics
figure 10.
IGBT
figure 11.
IGBT
Typical output characteristics
Typical output characteristics
IC = f(VCE
)
IC = f(VCE)
3500
3500
VGE
:
7 V
8 V
3000
2500
2000
1500
1000
500
3000
2500
2000
1500
1000
500
9 V
10 V
11 V
12 V
13 V
14 V
15 V
16 V
17 V
0
0
0
1
2
3
4
5
0
1
2
3
4
5
V
CE(V)
VCE(V)
tp
VGE
=
=
tp
=
250
15
μs
V
250
150
μs
°C
25 °C
Tj =
125 °C
150 °C
Tj:
VGE from 7 V to 17 V in steps of 1 V
figure 12.
IGBT
figure 13.
IGBT
Typical transfer characteristics
Transient thermal impedance as a function of pulse width
IC = f(VGE
)
Zth(j-s) = f(tp)
-1
1000
10
-2
750
500
250
0
10
-3
10
0,5
0,2
0,1
-4
10
0,05
0,02
0,01
0,005
0
-5
10
-5
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
0,0
2,5
5,0
7,5
10,0
12,5
10
10
tp(s)
V
GE(V)
tp
=
=
250
10
μs
V
D =
tp / T
0,057
25 °C
VCE
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
IGBT thermal model values
R (K/W)
τ (s)
5,19E-03
9,87E-03
1,27E-02
1,64E-02
8,59E-03
1,84E-03
2,47E-03
5,72E+00
1,19E+00
3,03E-01
6,32E-02
2,04E-02
2,67E-03
5,00E-04
Copyright Vincotech
16
30 Sep. 2021 / Revision 4
70-W424NIA1K2M702-LD07FP70
datasheet
Boost Switch Characteristics
figure 14.
IGBT
Safe operating area
IC = f(VCE
)
10000
1000
100
10
10µs
100µs
1ms
10ms
100ms
DC
1
0,1
0,01
1
10
100
1000
10000
V
CE(V)
D =
single pulse
Ts =
80
15
°C
V
VGE
=
Tj =
Tjmax
Copyright Vincotech
17
30 Sep. 2021 / Revision 4
70-W424NIA1K2M702-LD07FP70
datasheet
Boost Diode Characteristics
figure 15.
FWD
figure 16.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
-1
3500
3000
2500
2000
1500
1000
500
10
-2
10
-3
10
0,5
0,2
0,1
0,05
0,02
0,01
0,005
0
-4
0
0,0
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0,5
1,0
μs
1,5
2,0
2,5
3,0
3,5
4,0
10
10
10
10
tp(s)
VF(V)
tp
=
250
D =
tp / T
0,096
25 °C
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
FWD thermal model values
R (K/W)
τ (s)
1,42E-02
2,44E-02
2,03E-02
2,67E-02
4,42E-03
3,31E-03
2,72E-03
4,37E+00
1,03E+00
2,32E-01
4,58E-02
1,04E-02
1,02E-03
3,18E-04
Copyright Vincotech
18
30 Sep. 2021 / Revision 4
70-W424NIA1K2M702-LD07FP70
datasheet
Boost Sw. Inv. Diode Characteristics
figure 17.
FWD
figure 18.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
-1
3500
3000
2500
2000
1500
1000
500
10
-2
10
-3
10
0,5
0,2
0,1
0,05
0,02
0,01
0,005
0
-4
0
0,0
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0,5
1,0
μs
1,5
2,0
2,5
3,0
3,5
4,0
10
10
10
10
tp(s)
VF(V)
tp
=
250
D =
tp / T
0,096
25 °C
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
FWD thermal model values
R (K/W)
τ (s)
1,42E-02
2,44E-02
2,03E-02
2,67E-02
4,42E-03
3,31E-03
2,72E-03
4,37E+00
1,03E+00
2,32E-01
4,58E-02
1,04E-02
1,02E-03
3,18E-04
Copyright Vincotech
19
30 Sep. 2021 / Revision 4
70-W424NIA1K2M702-LD07FP70
datasheet
Boost Sw. Protection Diode Characteristics
figure 19.
FWD
figure 20.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
0
175
150
125
100
75
10
-1
10
-2
10
0,5
0,2
0,1
50
-3
10
0,05
0,02
0,01
0,005
0
25
-4
0
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0
1
2
3
4
5
10
10
10
10
tp(s)
VF(V)
tp
=
250
μs
D =
tp / T
0,525
25 °C
Tj:
125 °C
Rth(j-s) =
K/W
FWD thermal model values
R (K/W)
τ (s)
4,78E-02
9,08E-02
1,17E-01
1,51E-01
7,91E-02
1,69E-02
2,28E-02
5,72E+00
1,19E+00
3,03E-01
6,32E-02
2,04E-02
2,67E-03
5,00E-04
Copyright Vincotech
20
30 Sep. 2021 / Revision 4
70-W424NIA1K2M702-LD07FP70
datasheet
Thermistor Characteristics
figure 21.
Thermistor
Typical NTC characteristic as function of temperature
RT = f(T)
25000
20000
15000
10000
5000
0
20
40
60
80
100
120
140
T(°C)
Copyright Vincotech
21
30 Sep. 2021 / Revision 4
70-W424NIA1K2M702-LD07FP70
datasheet
Buck Switching Characteristics
figure 22.
IGBT
figure 23.
FWD
Typical switching energy losses as a function of collector current
Typical reverse recovered energy loss as a function of collector current
E = f(IC)
Erec = f(IC)
350
300
250
200
150
100
50
120
100
80
60
40
20
0
Eon
Eon
Eon
Erec
Erec
Eoff
Eoff
Erec
Eoff
0
0
250
500
750
1000 1250
1500 1750 2000
0
250
500
750
1000 1250
1500 1750 2000
IC(A)
IC(A)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
=
=
=
=
VCE
VGE
Rgon
=
=
=
600
-8/16
0,5
V
V
Ω
Ω
125 °C
150 °C
600
-8/16
0,5
V
V
Ω
125 °C
150 °C
Tj:
Tj:
Rgon
Rgoff
0,5
figure 24.
IGBT
figure 25.
FWD
Typical switching times as a function of collector current
Typical reverse recovery time as a function of collector current
t = f(IC)
trr = f(IC)
0
10
0,8
0,7
0,6
0,5
0,4
0,3
0,2
0,1
0,0
trr
trr
td(on)
td(off)
trr
tr
tf
-1
10
-2
10
0
250
500
750
1000 1250
1500 1750 2000
0
250
500
750
1000
1250
1500 1750
2000
IC(A)
IC(A)
With an inductive load at
With an inductive load at
25 °C
Tj =
VCE
VGE
Rgon
=
=
=
150
600
-8/16
0,5
°C
V
600
-8/16
0,5
V
V
Ω
125 °C
150 °C
Tj:
VCE
=
=
=
=
VGE
Rgon
Rgoff
V
Ω
Ω
0,5
Copyright Vincotech
22
30 Sep. 2021 / Revision 4
70-W424NIA1K2M702-LD07FP70
datasheet
Buck Switching Characteristics
figure 26.
FWD
figure 27.
FWD
Typical recovered charge as a function of collector current
Typical peak reverse recovery current as a function of collector current
Qr = f(IC)
IRM = f(IC)
350
300
250
200
150
100
50
1000
800
600
400
200
0
IRM
IRM
Qr
Qr
IRM
Qr
0
0
250
500
750
1000 1250
1500 1750 2000
0
250
500
750
1000 1250 1500 1750 2000
IC(A)
IC(A)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
Rgon
=
=
=
600
-8/16
0,5
V
V
Ω
125 °C
150 °C
600
-8/16
0,5
V
V
Ω
125 °C
150 °C
Tj:
Tj:
figure 28.
FWD
figure 29.
IGBT
Typical rate of fall of forward and reverse recovery current as a function of collector current
Reverse bias safe operating area
diF/dt, dirr/dt = f(IC)
IC = f(VCE)
17500
3000
diF/dt ‒ ‒ ‒ ‒ ‒
dirr/dt ──────
15000
IC MAX
2500
2000
1500
1000
500
12500
10000
7500
5000
2500
0
0
0
250
500
750
1000 1250 1500 1750 2000
0
250
500
750
1000
1250
1500
IC(A)
VCE(V)
Tj =
With an inductive load at
At
150
°C
Ω
25 °C
VCE
VGE
Rgon
=
=
=
Rgon
Rgoff
=
=
600
-8/16
0,5
V
V
Ω
125 °C
150 °C
0,5
0,5
Tj:
Ω
Copyright Vincotech
23
30 Sep. 2021 / Revision 4
70-W424NIA1K2M702-LD07FP70
datasheet
Boost Switching Characteristics
figure 30.
IGBT
figure 31.
FWD
Typical switching energy losses as a function of collector current
Typical reverse recovered energy loss as a function of collector current
E = f(IC)
Erec = f(IC)
300
250
200
150
100
50
100
80
60
40
20
0
Eon
Eon
Erec
Erec
Eon
Eoff
Eoff
Erec
Eoff
0
0
250
500
750
1000 1250
1500 1750 2000
0
250
500
750
1000 1250
1500 1750 2000
IC(A)
IC(A)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
=
=
=
=
VCE
VGE
Rgon
=
=
=
600
-8/16
0,5
V
V
Ω
Ω
125 °C
150 °C
600
-8/16
0,5
V
V
Ω
125 °C
150 °C
Tj:
Tj:
Rgon
Rgoff
0,5
figure 32.
IGBT
figure 33.
FWD
Typical switching times as a function of collector current
Typical reverse recovery time as a function of collector current
t = f(IC)
trr = f(IC)
0
10
0,8
0,7
0,6
0,5
0,4
0,3
0,2
0,1
0,0
trr
trr
td(off)
td(on)
trr
tr
tf
-1
10
-2
10
0
250
500
750
1000 1250
1500 1750 2000
0
250
500
750
1000
1250
1500 1750
2000
IC(A)
IC(A)
With an inductive load at
With an inductive load at
25 °C
Tj =
VCE
VGE
Rgon
=
=
=
150
600
-8/16
0,5
°C
V
600
-8/16
0,5
V
V
Ω
125 °C
150 °C
Tj:
VCE
=
=
=
=
VGE
Rgon
Rgoff
V
Ω
Ω
0,5
Copyright Vincotech
24
30 Sep. 2021 / Revision 4
70-W424NIA1K2M702-LD07FP70
datasheet
Boost Switching Characteristics
figure 34.
FWD
figure 35.
FWD
Typical recovered charge as a function of collector current
Typical peak reverse recovery current as a function of collector current
Qr = f(IC)
IRM = f(IC)
350
300
250
200
150
100
50
800
700
600
500
400
300
200
100
0
IRM
IRM
Qr
Qr
IRM
Qr
0
0
250
500
750
1000 1250
1500 1750 2000
0
250
500
750
1000 1250
1500 1750 2000
IC(A)
IC(A)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
Rgon
=
=
=
600
-8/16
0,5
V
V
Ω
125 °C
150 °C
600
-8/16
0,5
V
V
Ω
125 °C
150 °C
Tj:
Tj:
figure 36.
FWD
figure 37.
IGBT
Typical rate of fall of forward and reverse recovery current as a function of collector current
Reverse bias safe operating area
diF/dt, dirr/dt = f(IC)
IC = f(VCE)
17500
3000
diF/dt ‒ ‒ ‒ ‒ ‒
dirr/dt ──────
15000
IC MAX
2500
2000
1500
1000
500
12500
10000
7500
5000
2500
0
0
0
250
500
750
1000 1250 1500 1750 2000
0
250
500
750
1000
1250
1500
IC(A)
VCE(V)
Tj =
With an inductive load at
At
150
°C
Ω
25 °C
VCE
VGE
Rgon
=
=
=
Rgon
Rgoff
=
=
600
-8/16
0,5
V
V
Ω
125 °C
150 °C
0,5
0,5
Tj:
Ω
Copyright Vincotech
25
30 Sep. 2021 / Revision 4
70-W424NIA1K2M702-LD07FP70
datasheet
Switching Definitions
figure 38.
IGBT
figure 39.
IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff (ttEoff = integrating time for Eoff
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)
tdoff
IC
IC
VGE
VGE
VCE
tEoff
VCE
tEon
figure 40.
IGBT
figure 41.
IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
IC
IC
VCE
tr
VCE
tf
Copyright Vincotech
26
30 Sep. 2021 / Revision 4
70-W424NIA1K2M702-LD07FP70
datasheet
Switching Definitions
figure 42.
FWD
figure 43.
FWD
Turn-off Switching Waveforms & definition of trr
Turn-on Switching Waveforms & definition of tQr (tQr = integrating time for Qr)
Qr
IF
IF
fitted
VF
Copyright Vincotech
27
30 Sep. 2021 / Revision 4
70-W424NIA1K2M702-LD07FP70
datasheet
Ordering Code
Version
Ordering Code
Without thermal paste
70-W424NIA1K2M702-LD07FP70
70-W424NIA1K2M702-LD07FP70-/3/
With thermal paste (3,4 W/mK, PSX-P7)
Marking
Name
Date code
UL & VIN
Lot
Serial
SSSS
Text
NN-NNNNNNNNNNNNNN-
TTTTTTVV
WWYY
UL VIN
LLLLL
Type&Ver
Lot number
Serial
Date code
Datamatrix
TTTTTTTVV
LLLLL
SSSS
WWYY
Outline
Pin table [mm]
Pin
1
X
Y
Function
G11-1
S11-1
G11-2
S11-2
G13-1
S13-1
G13-2
28
29
30
31
32
33
34
35
95,95
150,05
150,05
95,95
27,7
30,7
S14-3
-5,85
-5,85
49,85
49,85
-7,65
-7,65
51,65
82,8
79,8
82,8
79,8
69,85
66,85
69,85
G14-4
S14-4
G12-3
S12-3
G12-4
S12-4
2
27,7
3
17,85
14,85
17,85
14,85
89,8
4
95,95
5
150,05
150,05
168,65
6
7
Therm1-
2
8
51,65
66,85
S13-2
36
168,65
86,7
Therm2-
2
9
-5,05
-5,05
49,05
49,05
-5,05
-5,05
49,05
49,05
67,65
30,7
27,7
G14-1
S14-1
G14-2
S14-2
G12-1
S12-1
G12-2
S12-2
Therm1-
1
37
38
39
40
41
42
43
44
45
-17,45
83,55
85
85
DC+desat
DC+desat
10
11
12
13
14
15
16
17
30,7
not assembled
not assembled
27,7
17,85
14,85
17,85
14,85
89,8
X2
0
Y2
Function
0
0
Phase
Phase
Phase
DC+
22
44
0
0
110,4
18
67,65
86,7
Therm2-
1
46
22
110,4
GND
19
20
21
22
23
24
25
26
95,15
95,15
82,8
79,8
G11-3
S11-3
G11-4
S11-4
G13-3
S13-3
G13-4
S13-4
47
48
49
50
51
52
53
44
110,4
0
DC-
Phase
Phase
Phase
DC+
101
123
145
101
123
145
150,85
150,85
93,35
82,8
0
79,8
0
69,85
66,85
69,85
66,85
110,4
110,4
110,4
93,35
GND
152,65
152,65
DC-
27
95,95
30,7
G14-3
Copyright Vincotech
28
30 Sep. 2021 / Revision 4
70-W424NIA1K2M702-LD07FP70
datasheet
Pinout
DC+
n = 1-4
T11
D14
DC+desat
D41
G11-n
S11-n
T13
T14
D11
D12
D16
D15
D43
D44
G13-n
S13-n
PHASE
GND
G14-n
S14-n
T12
D42
D13
G12-n
S12-n
2x
Rt
DC-
Therm1
Therm2
NOTE: Driver pins for parallel devices are not connected inside the module!
Identification
Component
Voltage
Current
Function
Comment
ID
T11, T12
D11, D12
D41, D42
T13, T14
D13, D14
D15, D16
D43, D44
Rt
IGBT
FWD
FWD
IGBT
FWD
FWD
FWD
NTC
1200 V
1200 V
1200 V
1200 V
1200 V
1200 V
1200 V
1200 A
1200 A
60 A
Buck Switch
Buck Diode
Buck Sw. Protection Diode
Boost Switch
1200 A
1200 A
1200 A
60 A
Boost Diode
Boost Sw. Inv. Diode
Boost Sw. Protection Diode
Thermistor
Copyright Vincotech
29
30 Sep. 2021 / Revision 4
70-W424NIA1K2M702-LD07FP70
datasheet
Packaging instruction
Handling instruction
Standard packaging quantity (SPQ) 4
>SPQ
Standard
<SPQ
Sample
Handling instructions for VINco X8 packages see vincotech.com website.
Package data
Package data for VINco X8 packages see vincotech.com website.
Vincotech thermistor reference
See Vincotech thermistor reference table at vincotech.com website.
UL recognition and file number
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.
Document No.:
Date:
Modification:
Pages
Change of Buck Switch and Diode static characteristics
Change of Boost Switch and Diode static characteristics
Change of Boost Sw. Inv. Diode static characteristics
70-W424NIA1K2M702-LD07FP70-D4-14
30 Sep. 2021
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine
the suitability of the information and the product for reader’s intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval
of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or effectiveness.
Copyright Vincotech
30
30 Sep. 2021 / Revision 4
相关型号：
70-W424NIA800M7-M800F7
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;Switching optimized for EMC
VINCOTECH
70-W612M3A1K8SC02-L300FP7
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current
VINCOTECH
70-W612NMA1K8M702-LC09FP7
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;Switching optimized for EMC
VINCOTECH
70-W624N3A1K2SC01-L400FP1
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current
VINCOTECH
70-W624NIA1K2M702-L400FP7
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;Switching optimized for EMC
VINCOTECH
70-W624NIA1K8M701-LD00FP7
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;Switching optimized for EMC
VINCOTECH
70.0000MHZMP2410/50/-10+60/8PF
Parallel - 3Rd Overtone Quartz Crystal, 70MHz Nom, ROHS COMPLIANT, SMD, 4 PIN
EUROQUARTZ
70.0000MHZMP430/10/-10+60/SR
Series - 3Rd Overtone Quartz Crystal, 70MHz Nom, ROHS COMPLIANT, SMD, 4 PIN
EUROQUARTZ
70.000MHZ49USMX/30/30/-10+60/18PF/AT3
Parallel - 3Rd Overtone Quartz Crystal, 70MHz Nom, ROHS COMPLIANT, HERMETIC SEALED, RESISTANCE WELDED, SMD, 2 PIN
EUROQUARTZ
70.000MHZ49USMXL25/10/10/-10+60/8PF/AT3
Parallel - 3Rd Overtone Quartz Crystal, 70MHz Nom, ROHS COMPLIANT, HERMETIC SEALED, RESISTANCE WELD, SMD, 2 PIN
EUROQUARTZ
©2020 ICPDF网 联系我们和版权申明