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80-M2122PA200SC-K709F4 [VINCOTECH]

Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;
80-M2122PA200SC-K709F4
型号： 80-M2122PA200SC-K709F4
厂家： VINCOTECH    VINCOTECH
描述：

Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current
文件： 总16页 (文件大小：3383K)
中文：  中文翻译
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80-M2122PA200SC-K709F40  
datasheet  
MiniSKiip®DUAL 2  
1200 V / 200 A  
Features  
MiniSkiip®2 housing  
● Half-Bridge topology  
● Trench IGBT and CAL diode chip technology  
● Integrated NTC sensor  
● Solderless spring contact mountig system  
Schematic  
Target applications  
● Charging Stations  
● Industrial Drives  
● Solar Inverters  
● UPS  
● Welding & Cutting  
Types  
● 80-M2122PA200SC-K709F40  
Maximum Ratings  
Tj = 25 °C, unless otherwise specified  
Parameter  
Symbol  
Condition  
Value  
Unit  
Half-Bridge Switch  
VCES  
IC  
Collector-emitter voltage  
1200  
228  
600  
594  
±20  
10  
V
A
Collector current  
Tj = Tjmax  
Ts = 80 °C  
Ts = 80 °C  
Tj = 150 °C  
ICRM  
Ptot  
VGES  
tSC  
Repetitive peak collector current  
Total power dissipation  
Gate-emitter voltage  
tp limited by Tjmax  
Tj = Tjmax  
A
W
V
Short circuit ratings  
VGE = 15 V  
Vcc = 800 V  
µs  
°C  
Tjmax  
Maximum junction temperature  
175  
Copyright Vincotech  
1
05 Mar. 2019 / Revision 4  
80-M2122PA200SC-K709F40  
datasheet  
Maximum Ratings  
Tj = 25 °C, unless otherwise specified  
Parameter  
Symbol  
Condition  
Value  
Unit  
Half-Bridge Diode  
VRRM  
IF  
IFSM  
I2t  
Ptot  
Tjmax  
Peak repetitive reverse voltage  
1200  
152  
V
A
Continuous (direct) forward current  
Surge (non-repetitive) forward current  
Surge current capability  
Tj = Tjmax  
Ts = 80 °C  
Tj = 150 °C  
Ts = 80 °C  
1100  
3026  
331  
A
50 Hz Single Half Sine Wave  
tp = 10 ms  
A2s  
W
°C  
Total power dissipation  
Tj = Tjmax  
Maximum junction temperature  
175  
Module Properties  
Thermal Properties  
Tstg  
Tjop  
Storage temperature  
-40…+125  
°C  
°C  
Operation temperature under switching condition  
Isolation Properties  
-40…(Tjmax - 25)  
DC Test Voltage*  
tp = 2 s  
5500  
2500  
6,3  
V
Visol  
Isolation voltage  
AC Voltage  
tp = 1 min  
V
With std lid  
Creepage distance  
Clearance  
mm  
mm  
For more informations see handling instructions  
With std lid  
6,3  
For more informations see handling instructions  
Comparative Tracking Index  
*100 % tested in production  
CTI  
> 200  
Copyright Vincotech  
2
05 Mar. 2019 / Revision 4  
80-M2122PA200SC-K709F40  
datasheet  
Characteristic Values  
Parameter  
Symbol  
Conditions  
Value  
Typ  
Unit  
VCE [V] IC [A]  
VGE [V]  
VGS [V]  
VDS [V] ID [A] Tj [°C]  
VF [V] IF [A]  
Min  
Max  
Half-Bridge Switch  
Static  
VGE(th)  
Gate-emitter threshold voltage  
VGE = VCE  
0,0076 25  
25  
5,1  
5,8  
6,4  
V
V
1,53  
1,93  
2,22  
2,30  
1,97  
VCEsat  
Collector-emitter saturation voltage  
15  
200  
125  
150  
ICES  
IGES  
rg  
Collector-emitter cut-off current  
Gate-emitter leakage current  
Internal gate resistance  
Input capacitance  
0
1200  
0
25  
25  
2,6  
µA  
nA  
Ω
20  
240  
3,75  
12600  
540  
Cies  
Cres  
Qg  
f = 1 Mhz  
0
25  
25  
pF  
Reverse transfer capacitance  
Gate charge  
15  
#VALUE! #VALUE! 25  
1600  
nC  
Thermal  
λpaste = 2,5 W/mK  
(HPTP)  
Rth(j-s)  
Thermal resistance junction to sink  
0,16  
K/W  
Dynamic  
25  
125  
150  
25  
186  
196  
201  
38  
td(on)  
Turn-on delay time  
tr  
Rise time  
125  
150  
25  
125  
150  
25  
125  
150  
25  
125  
150  
25  
43  
44  
Rgon = 2 Ω  
Rgoff = 2 Ω  
ns  
304  
378  
398  
55  
104  
118  
13,31  
19,06  
21,39  
12,17  
18,93  
td(off)  
Turn-off delay time  
Fall time  
±15  
600  
200  
tf  
Qr  
FWD  
Qr  
FWD  
Qr  
FWD  
= 13,7 μC  
= 28,2 μC  
= 33,7 μC  
Eon  
Turn-on energy (per pulse)*  
mWs  
125  
Eoff  
Turn-off energy (per pulse)*  
* Ls = 12 nH  
150  
21,49  
Copyright Vincotech  
3
05 Mar. 2019 / Revision 4  
80-M2122PA200SC-K709F40  
datasheet  
Characteristic Values  
Parameter  
Symbol  
Conditions  
Value  
Typ  
Unit  
VCE [V] IC [A]  
VGE [V]  
VGS [V]  
VDS [V] ID [A] Tj [°C]  
VF [V] IF [A]  
Min  
Max  
Half-Bridge Diode  
Static  
25  
2,47  
2,68  
2,60  
2,52  
VF  
IR  
125  
150  
25  
Forward voltage  
200  
V
240  
Reverse leakage current  
1200  
µA  
150  
35400  
Thermal  
λpaste = 2,5 W/mK  
(HPTP)  
Rth(j-s)  
Thermal resistance junction to sink  
0,29  
K/W  
Dynamic  
25  
175  
213  
231  
IRRM  
125  
150  
25  
Peak recovery current  
A
120  
trr  
Qr  
Reverse recovery time  
125  
150  
25  
125  
150  
25  
125  
150  
25  
125  
150  
299  
316  
ns  
di/dt = 6810 A/μs  
di/dt = 4754 A/μs  
di/dt = 5374 A/μs  
13,69  
28,16  
33,67  
4,78  
10,73  
12,76  
5315  
3577  
3745  
±15  
600  
200  
Recovered charge  
μC  
Erec  
Reverse recovered energy  
Peak rate of fall of recovery current  
mWs  
A/µs  
(dirf/dt)max  
Thermistor  
R
ΔR/R  
P
Rated resistance  
25  
100  
25  
25  
25  
25  
5
kΩ  
%
Deviation of R100  
Power dissipation  
Power dissipation constant  
B-value  
R100 = 493 Ω  
-5  
+5  
245  
1,4  
mW  
mW/K  
K
B(25/50)  
Tol. ±2 %  
Tol. ±2 %  
3375  
3437  
B(25/100)  
B-value  
K
Vincotech NTC Reference  
K
Copyright Vincotech  
4
05 Mar. 2019 / Revision 4  
80-M2122PA200SC-K709F40  
datasheet  
Half-Bridge Switch Characteristics  
figure 1.  
IGBT  
figure 2.  
IGBT  
Typical output characteristics  
Typical output characteristics  
I C = f(VCE  
)
I C = f(VCE)  
VGE  
:
I
I
tp  
=
250  
15  
μs  
25 °C  
125 °C  
150 °C  
tp  
=
250  
125  
μs  
°C  
VGE  
=
V
Tj:  
Tj =  
VGE from  
7 V to 17 V in steps of 1 V  
figure 3.  
IGBT  
figure 4.  
IGBT  
Typical transfer characteristics  
Transient thermal impedance as function of pulse duration  
I C = f(VGE  
)
Z th(j-s) = f(tp)  
100  
I
Z
10-1  
10-2  
10-3  
10-5  
10-4  
10-3  
10-2  
10-1  
100  
101  
tp(s)  
102  
tp  
=
100  
0
μs  
25 °C  
125 °C  
150 °C  
D =  
R th(j-s)  
tp / T  
VCE  
=
V
Tj:  
=
0,16  
K/W  
IGBT thermal model values  
R (K/W)  
τ (s)  
5,64E-03  
1,39E-02  
7,82E-02  
3,45E-02  
1,81E-02  
9,59E-03  
2,56E-01  
3,37E-02  
4,66E-03  
1,59E-03  
3,40E-04  
4,85E-05  
Copyright Vincotech  
5
05 Mar. 2019 / Revision 4  
80-M2122PA200SC-K709F40  
datasheet  
Half-Bridge Switch Characteristics  
figure 5.  
IGBT  
Safe operating area  
I C = f(VCE  
)
I
D =  
single pulse  
80  
Ts  
=
ºC  
VGE  
=
±15  
V
Tj =  
Tjmax  
Copyright Vincotech  
6
05 Mar. 2019 / Revision 4  
80-M2122PA200SC-K709F40  
datasheet  
Half-Bridge Diode Characteristics  
figure 1.  
FWD  
figure 2.  
FWD  
Typical forward characteristics  
Transient thermal impedance as a function of pulse width  
I F = f(VF)  
Z th(j-s) = f(tp)  
100  
Z
10-1  
10-2  
10-4  
=
10-3  
10-2  
10-1  
100  
101  
102  
tp  
=
250  
μs  
25 °C  
125 °C  
150 °C  
D =  
tp / T  
0,29  
Tj:  
R th(j-s)  
K/W  
FWD thermal model values  
R (K/W)  
τ (s)  
1,60E-02  
2,72E-02  
1,19E-01  
7,14E-02  
3,20E-02  
2,16E-02  
2,81E-01  
4,28E-02  
8,35E-03  
2,21E-03  
5,36E-04  
7,35E-05  
Thermistor Characteristics  
figure 1.  
Thermistor  
Typical Thermistor resistance values  
Typical NTC characteristic  
as a function of temperature  
R = f(T)  
Copyright Vincotech  
7
05 Mar. 2019 / Revision 4  
80-M2122PA200SC-K709F40  
datasheet  
Half-Bridge Switching Characteristics  
figure 1.  
IGBT  
figure 2.  
IGBT  
Typical switching energy losses as a function of collector current  
Typical switching energy losses as a function of gate resistor  
E = f(R g)  
E = f(I C  
)
E
E
25 °C  
With an inductive load at  
With an inductive load at  
25 °C  
VCE  
VGE  
=
=
=
=
600  
±15  
2
V
V
Ω
Ω
Tj:  
VCE  
VGE  
I C  
=
=
=
600  
±15  
200  
V
V
A
Tj:  
125 °C  
150 °C  
125 °C  
150 °C  
R gon  
R goff  
2
figure 3.  
FWD  
figure 4.  
FWD  
Typical reverse recovered energy loss as a function of collector current  
Typical reverse recovered energy loss as a function of gate resistor  
Erec = f(I c)  
Erec = f(R g)  
E
E
With an inductive load at  
25 °C  
With an inductive load at  
25 °C  
VCE  
VGE  
=
=
=
600  
±15  
2
V
V
Ω
Tj:  
VCE  
VGE  
I C  
=
=
=
600  
±15  
200  
V
V
A
Tj:  
125 °C  
150 °C  
125 °C  
150 °C  
R gon  
Copyright Vincotech  
8
05 Mar. 2019 / Revision 4  
80-M2122PA200SC-K709F40  
datasheet  
Half-Bridge Switching Characteristics  
figure 5.  
IGBT  
figure 6.  
IGBT  
Typical switching times as a function of collector current  
Typical switching times as a function of gate resistor  
t = f(I C  
)
t = f(R g)  
t
t
With an inductive load at  
With an inductive load at  
Tj =  
150  
600  
±15  
2
°C  
V
Tj =  
150  
600  
±15  
200  
°C  
V
VCE  
=
=
=
=
VCE  
=
=
=
VGE  
R gon  
R goff  
V
VGE  
I C  
V
Ω
Ω
A
2
figure 7.  
FWD  
figure 8.  
FWD  
Typical reverse recovery time as a function of collector current  
Typical reverse recovery time as a function of IGBT turn on gate resistor  
trr = f(I C  
)
trr = f(R gon  
)
t
t
25 °C  
At  
VCE  
=
600  
±15  
2
V
V
Ω
At  
VCE  
=
600  
V
V
A
25 °C  
VGE  
=
=
Tj:  
VGE  
I C  
=
±15  
Tj:  
125 °C  
150 °C  
125 °C  
150 °C  
R gon  
=
200  
Copyright Vincotech  
9
05 Mar. 2019 / Revision 4  
80-M2122PA200SC-K709F40  
datasheet  
Half-Bridge Switching Characteristics  
figure 9.  
FWD  
figure 10.  
FWD  
Typical recovered charge as a function of collector current  
Typical recovered charge as a function of IGBT turn on gate resistor  
Q r = f(I C  
)
Q r = f(R gon)  
Q
Q
25 °C  
At  
VCE  
VGE  
R gon  
=
600  
±15  
2
V
V
Ω
At  
VCE  
VGE  
I C  
=
600  
±15  
200  
V
V
A
25 °C  
=
Tj:  
=
Tj:  
125 °C  
150 °C  
125 °C  
150 °C  
=
=
figure 11.  
FWD  
figure 12.  
FWD  
Typical peak reverse recovery current current as a function of collector current  
Typical peak reverse recovery current as a function of IGBT turn on gate resistor  
I RM = f(I C  
)
I RM = f(R gon)  
I
I
25 °C  
At  
VCE  
=
600  
±15  
2
V
V
Ω
At  
VCE  
VGE  
I C  
=
600  
±15  
200  
V
V
A
25 °C  
VGE  
=
=
Tj:  
=
Tj:  
125 °C  
150 °C  
125 °C  
150 °C  
R gon  
=
Copyright Vincotech  
10  
05 Mar. 2019 / Revision 4  
80-M2122PA200SC-K709F40  
datasheet  
Half-Bridge Switching Characteristics  
figure 13.  
FWD  
figure 14.  
FWD  
Typical rate of fall of forward and reverse recovery current as a function of collector current  
Typical rate of fall of forward and reverse recovery current as a function of IGBT turn on gate resistor  
di F/dt, di rr/dt = f(I C  
)
di F/dt, di rr/dt = f(R gon)  
diF/dt  
dir r/dt  
diF/dt  
t
dirr/dt  
t
i
i
At  
VCE  
=
600  
±15  
2
V
V
Ω
25 °C  
125 °C  
150 °C  
At  
VCE  
VGE  
I C  
=
600  
±15  
200  
V
V
A
25 °C  
VGE  
R gon  
=
=
=
125 °C  
Tj:  
Tj:  
=
150 °C  
figure 15.  
IGBT  
Reverse bias safe operating area  
I C = f(VCE  
)
IC MAX  
I
I
I
V
At  
Tj =  
125  
°C  
Ω
R gon  
R goff  
=
=
2
2
Ω
Copyright Vincotech  
11  
05 Mar. 2019 / Revision 4  
80-M2122PA200SC-K709F40  
datasheet  
Half-Bridge Switching Definitions  
General conditions  
T j  
=
=
=
125 °C  
R gon  
R goff  
2 Ω  
2 Ω  
figure 1.  
IGBT  
figure 2.  
IGBT  
Turn-off Switching Waveforms & definition of tdoff, tEoff (tEoff = integrating time for Eoff  
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)  
tdoff  
IC  
IC  
VGE  
VGE  
VCE  
tEoff  
VCE  
tEon  
VGE (0%) =  
-15  
15  
V
VGE (0%) =  
-15  
V
VGE (100%) =  
VC (100%) =  
I C (100%) =  
V
VGE (100%) =  
VC (100%) =  
I C (100%) =  
15  
V
600  
200  
378  
V
600  
200  
196  
V
A
A
tdoff  
=
ns  
tdon  
=
ns  
figure 3.  
IGBT  
figure 4.  
IGBT  
Turn-off Switching Waveforms & definition of tf  
Turn-on Switching Waveforms & definition of tr  
IC  
IC  
VCE  
tr  
VCE  
tf  
VC (100%) =  
I C (100%) =  
tf =  
600  
200  
104  
V
VC (100%) =  
I C (100%) =  
600  
200  
43  
V
A
A
ns  
tr  
=
ns  
Copyright Vincotech  
12  
05 Mar. 2019 / Revision 4  
80-M2122PA200SC-K709F40  
datasheet  
Half-Bridge Switching Characteristics  
figure 5.  
FWD  
figure 6.  
FWD  
Turn-off Switching Waveforms & definition of trr  
Turn-on Switching Waveforms & definition of tQr (tQr = integrating time for Qr)  
Qr  
IF  
IF  
fitted  
VF  
VF (100%) =  
I F (100%) =  
I RRM (100%) =  
600  
200  
213  
299  
V
I F (100%) =  
Q r (100%) =  
200  
A
A
28,16  
μC  
A
trr  
=
ns  
Copyright Vincotech  
13  
05 Mar. 2019 / Revision 4  
80-M2122PA200SC-K709F40  
datasheet  
Ordering Code & Marking  
Version  
With std lid (6.5mm height) + no thermal grease  
With thin lid (2.8mm height) + no thermal grease  
With std lid (6.5mm height) + thermal grease (0,8 W/mK, P12, silicone-based)  
With thin lid (2.8mm height) + thermal grease (0,8 W/mK, P12, silicone-based)  
With std lid (6.5mm height) + thermal grease (2,5 W/mK, TG20032, silicone-free)  
With thin lid (2.8mm height) + thermal grease (2,5 W/mK, TG20032, silicone-free)  
With std lid (6.5mm height) + thermal grease (2,5 W/mK, HPTP, silicone-based)  
With thin lid (2.8mm height) + thermal grease (2,5 W/mK, HPTP, silicone-based)  
Ordering Code  
80-M2122PA200SC-K709F40-/0A/  
80-M2122PA200SC-K709F40-/0B/  
80-M2122PA200SC-K709F40-/1A/  
80-M2122PA200SC-K709F40-/1B/  
80-M2122PA200SC-K709F40-/4A/  
80-M2122PA200SC-K709F40-/4B/  
80-M2122PA200SC-K709F40-/5A/  
80-M2122PA200SC-K709F40-/5B/  
Name  
Date code  
WWYY  
UL & VIN  
UL VIN  
Lot  
Serial  
NN-NNNNNNNNNNNNNN  
TTTTTTVVWWYY UL  
VIN LLLLL SSSS  
Text  
NN-NNNNNNNNNNNNNN-TTTTTTVV  
LLLLL  
SSSS  
Type&Ver  
Lot number  
Serial  
Date code  
WWYY  
Datamatrix  
TTTTTTTVV  
LLLLL  
SSSS  
Outline  
PCB pad table  
Pin  
X
Y
Function  
S12  
-7,6  
4,7  
21,9  
21,9  
21,8  
18,6  
15,4  
12,2  
9
1
2
G12  
DC+  
DC+  
DC+  
DC+  
DC+  
DC+  
DC+  
DC+  
3
4
18,6  
18,6  
18,6  
18,6  
18,6  
22,5  
22,5  
22,5  
5
6
7
8
21,8  
18,6  
15,4  
9
10  
11  
12  
13  
22,5  
22,5  
-22,5  
12,2  
9
7,8  
DC+  
DC+  
Ph  
14  
15  
16  
17  
18  
19  
20  
21  
22  
-22,5  
-22,5  
-22,5  
-22,5  
-18,6  
-18,6  
-18,6  
-18,6  
-18,6  
4,6  
1,4  
-1,8  
-5  
Ph  
Ph  
Ph  
Ph  
Ph  
Ph  
Ph  
Ph  
Ph  
7,8  
4,6  
1,4  
-1,8  
-5  
23  
24  
25  
26  
27  
28  
29  
30  
31  
32  
33  
34  
35  
36  
-6,8  
-6,8  
18,6  
18,6  
18,6  
18,6  
18,6  
22,5  
22,5  
22,5  
22,5  
22,5  
4,6  
1,6  
-1,6  
Therm1  
Therm2  
DC-  
-9  
-12,2  
-15,4  
-18,6  
-21,8  
-9  
DC-  
DC-  
DC-  
DC-  
DC-  
-12,2  
-15,4  
-18,6  
-21,8  
-18,7  
-21,9  
DC-  
DC-  
DC-  
DC-  
S11  
G11  
1,7  
Pad positions refers to center point. For more informations on pad design please see package data  
Copyright Vincotech  
14  
05 Mar. 2019 / Revision 4  
80-M2122PA200SC-K709F40  
datasheet  
Pinout  
Identification  
ID  
Component  
Voltage  
Current  
Function  
Comment  
T11 , T12  
IGBT  
1200 V  
200 A  
200 A  
Half-Bridge Switch  
Half-Bridge Diode  
Thermistor  
D11 , D12  
Rt  
FWD  
NTC  
1200 V  
Copyright Vincotech  
15  
05 Mar. 2019 / Revision 4  
80-M2122PA200SC-K709F40  
datasheet  
Packaging instruction  
Handling instruction  
Standard packaging quantity (SPQ) 72  
>SPQ  
Standard  
<SPQ  
Sample  
Handling instructions for MiniSkiiP® 2 packages see vincotech.com website.  
Package data  
Package data for MiniSkiiP® 2 packages see vincotech.com website.  
UL recognition and file number  
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.  
Document No.:  
Date:  
Modification:  
Pages  
80-M2122PA200SC-K709F40-D4-14  
05 Mar. 2019  
Correction of Ic/If values  
1
DISCLAIMER  
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to  
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations  
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,  
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said  
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons  
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine  
the suitability of the information and the product for reader’s intended use.  
LIFE SUPPORT POLICY  
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval  
of Vincotech.  
As used herein:  
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or  
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be  
reasonably expected to result in significant injury to the user.  
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause  
the failure of the life support device or system, or to affect its safety or effectiveness.  
Copyright Vincotech  
16  
05 Mar. 2019 / Revision 4  

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