S852TF [VISHAY]
Silicon NPN Planar RF Transistor; 硅NPN平面RF晶体管
| 型号： | S852TF |
| 厂家： | 
VISHAY |
| 描述： | Silicon NPN Planar RF Transistor |
| 文件： | 总5页 (文件大小：87K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Not for new design, this product will be obsoleted soon
S852TF
Vishay Semiconductors
Silicon NPN Planar RF Transistor
Description
1
The main purpose of this bipolar transistor is broad-
band amplification up to 2 GHz. In the space-saving
3-pin surface-mount SOT-490 package electrical per-
formance and reliability are taken to a new level cov-
ering a smaller footprint on PC boards than previous
packages.
2
3
16867
In addition to space savings, the SOT-490 provides a
higher level of reliability than other 3-pin packages,
such as more resistance to moisture.
Electrostatic sensitive device.
Observe precautions for handling.
Due to the short length of its leads the SOT-490 is
Applications
For low noise and high gain broadband amplifiers at
collector currents from 0.2 mA to 5 mA.
also reducing package inductances resulting in some
better electrical performance. All of these aspects
make this device an ideal choice for demanding RF
applications.
Features
• Low supply voltage
• Low current consumption
Mechanical Data
Typ: S852TF
Case: SOT-490 Plastic case
Weight: approx. 2.5 mg
Pinning: 1 = Collector, 2 = Base, 3 = Emitter
e3
• Low noise figure
• 50 Ω input impedance at 945 MHz
• High power gain
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Parts Table
Part
Marking
Package
S852TF
52
SOT-490
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
VCBO
Value
Unit
V
Collector-base voltage
12
Collector-emitter voltage
Emitter-base voltage
Collector current
VCEO
VEBO
IC
6
V
V
2
8
30
mA
mW
°C
Total power dissipation
Junction temperature
Storage temperature range
Tamb ≤ 125 °C
Ptot
Tj
150
Tstg
- 65 to + 150
°C
Document Number 85104
Rev. 1.4, 05-Sep-08
www.vishay.com
1
S852TF
Vishay Semiconductors
Maximum Thermal Resistance
Parameter
Test condition
Symbol
RthJA
Value
450
Unit
K/W
1)
Junction ambient
1) on glass fibre printed board (25 x 20 x 1.5) mm3 plated with 35 μm Cu
Electrical DC Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
ICES
ICBO
Min
Typ.
Max
100
Unit
Collector-emitter cut-off current VCE = 12 V, VBE = 0
μA
Collector-base cut-off current
Emitter-base cut-off current
V
V
CB = 8 V, IE = 0
EB = 1 V, IC = 0
100
1
nA
μA
V
IEBO
Collector-emitter breakdown
voltage
I
C = 1 mA, IB = 0
V(BR)CEO
6
Collector-emitter saturation
voltage
IC = 5 mA, IB = 0.5 mA
VCEsat
hFE
0.1
90
0.4
V
DC forward current transfer ratio VCE = 5 V, IC = 30 mA
40
150
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2
Document Number 85104
Rev. 1.4, 05-Sep-08
S852TF
Vishay Semiconductors
Electrical AC Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
fT
Min
Typ.
4.7
Max
Unit
Transition frequency
VCE = 3 V, IC = 1 mA,
f = 500 MHz
GHz
V
CE = 2 V, IC = 1.5 mA,
fT
5.2
GHz
f = 500 MHz
Collector-base capacitance
Noise figure
VCB = 1 V, f = 1 MHz
Ccb
Fopt
0.25
1.1
pF
dB
V
CE = 2 V, IC = 0.5 mA,
ZS = ZSopt, f = 450 MHz
CE = 3 V, IC = 1 mA,
ZS = ZSopt, f = 945 MHz
CE = 2 V, IC = 1.5 mA,
ZS = ZSopt, f = 945 MHz
CE = 2 V, IC = 0.5 mA,
V
Fopt
Fopt
1.7
1.9
dB
dB
V
Power gain
V
Gpe @ Fopt
Gpe @ Fopt
11.5
10.5
12.5
10
dB
dB
dB
dB
f = 450 MHz
VCE = 3 V, IC = 1 mA,
f = 945 MHz
V
CE = 2 V, IC = 1.5 mA,
f = 945 MHz
CE = 2 V, IC = 1.5 mA,
f = 945 MHz, ZO = 50 Ω
CE = 3 V, IC = 1 mA,
f = 945 MHz
CE = 2 V, IC = 1.5 mA,
f = 945 MHz
Gpe @ Fopt
2
Transducer gain
V
|S21e
|
Real part of input impedance
V
Re(h11e)
Re(h11e)
50
50
Ω
Ω
V
Package Dimensions in mm
1.5 (0.059)
1.7 (0.066)
0.1 A
1.5 (0.059)
1.7 (0.066)
3 x 0.20 (0.008)
3 x 0.30 (0.012)
0.4 (0.016)
1.15(0.045)
0.1 B
0.65(0.026)
ISO Method E
16866
0.5 (0.016)
0.5(0.016)
1.0 (0.039)
Document Number 85104
Rev. 1.4, 05-Sep-08
www.vishay.com
3
S852TF
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
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4
Document Number 85104
Rev. 1.4, 05-Sep-08
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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1
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