SI1021R [VISHAY]
P-Channel 60-V (D-S) MOSFET; P通道60 -V （D -S ）的MOSFET
| 型号： | SI1021R |
| 厂家： | 
VISHAY |
| 描述： | P-Channel 60-V (D-S) MOSFET |
| 文件： | 总4页 (文件大小：55K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Si1021R
Vishay Siliconix
New Product
P-Channel 60-V (D-S) MOSFET
PRODUCT SUMMARY
V(BR)DSS(min) (V)
rDS(on)
(
ꢀ
)
VGS(th) (V)
ID (mA)
–60
4 @ V = –10 V
–1 to –3.0
–190
GS
FEATURES
BENEFITS
APPLICATIONS
D High-Side Switching
D Ease in Driving Switches
D Low Offset Voltage
D Drivers: Relays, Solenoids, Lamps, Hammers,
Displays, Memories, Transistors, etc.
D Low On-Resistance: 4 Ω
D Low Threshold: –2 V (typ)
D Fast Switching Speed: 20 ns (typ)
D Low Input Capacitance: 20 pF (typ)
D Miniature Package
D Battery Operated Systems
D Power Supply Converter Circuits
D Solid-State Relays
D Low-Voltage Operation
D High-Speed Circuits
D Easily Driven Without Buffer
D Small Board Area
D Gate-Source ESD Protection
SC-75A
(SOT-416)
G
S
1
2
3
D
Marking Code: F
Top View
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)
A
Parameter
Symbol
Limit
–60
Unit
Drain-Source Voltage
Gate-Source Voltage
V
DS
GS
V
V
"20
T
= 25_C
= 85_C
–190
–135
A
a
Continuous Drain Current (T = 150__C)
I
J
D
T
A
mA
b
Pulse Drain Current
I
–650
DM
T
= 25_C
= 85_C
250
A
a
P
Power Dissipation
D
mW
T
130
A
a
Maximum Junction-to-Ambient
R
thJA
500
_C/W
_C
Operating Junction and Storage Temperature Range
T , T
–55 to 150
J
stg
Notes
a. Surface mounted on FR4 board.
b. Pulse width limited by maximum junction temperature.
Document Number: 71410
S-21120—Rev. C, 01-Jul-02
www.vishay.com
1
Si1021R
New Product
Vishay Siliconix
SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
V
V
= 0 V, I = –10 ꢁA
–60
–1
(BR)DSS
GS
D
V
V
V
= V , I = –0.25 mA
–3.0
"10
GS(th)
DS
GS D
V
= 0 V, V = "20 V
ꢁA
DS
DS
GS
V
= 0 V, V = "10 V
"200
"500
"100
–25
GS
Gate-Body Leakage
I
GSS
V
= 0 V, V = "10 V, T = 85_C
DS
GS
J
V
= 0 V, V = "5 V
GS
nA
DS
V
= –50 V, V = 0 V
GS
DS
Zero Gate Voltage Drain Current
I
DSS
V
= –50 V, V = 0 V, T = 85_C
–250
DS
GS
J
V
= –10 V, V = –4.5 V
–50
DS
GS
a
On-State Drain Current
I (on)
D
mA
V
= –10 V, V = –10 V
–600
DS
GS
GS
GS
V
= –4.5 V, I = –25 mA
8
4
6
D
a
V
= –10 V, I = –500 mA
Drain-Source On-Resistance
r
ꢀ
D
DS(on)
V
= –10 V, I = –500 mA, T = 125_C
GS
D
J
a
Forward Transconductance
g
fs
V
= –10 V, I = –100 mA
80
mS
V
DS
D
a
Diode Forward Voltage
V
I
S
= –200 mA, V = 0 V
–1.4
SD
GS
Dynamic
Total Gate Charge
Q
1.7
0.26
0.46
23
g
Gate-Source Charge
Gate-Drain Charge
Q
Q
V
= –30 V, V = –15 V, I ^ –500 mA
nC
pF
gs
gd
iss
DS
GS
D
Input Capacitance
C
C
Output Capacitance
Reverse Transfer Capacitance
10
V
= –25 V, V = 0 V, f = 1 MHz
GS
oss
DS
C
rss
5
Switchingb
Turn-On Time
Turn-Off Time
t
20
35
V
= –25 V, R = 150 ꢀ
L
ON
DD
ns
I
D
^ –200 mA, V
= –10 V
GEN
t
OFF
R
G
= 10 ꢀ
Notes
a. Pulse test: PW v300 ms duty cycle v2%.
b. Switching time is essentially independent of operating temperature.
Document Number: 71410
S-21120—Rev. C, 01-Jul-02
www.vishay.com
2
Si1021R
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
1.0
1200
900
600
300
0
V
= 10 V
GS
T
J
= –55_C
7 V
6 V
0.8
0.6
0.4
0.2
0.0
8 V
25_C
125_C
5 V
4 V
0
1
2
3
4
5
0
2
4
6
8
10
V
– Drain-to-Source Voltage (V)
V
– Gate-to-Source Voltage (V)
GS
DS
On-Resistance vs. Drain Current
Capacitance
40
32
24
16
8
20
16
12
8
V
= 0 V
GS
V
= 4.5 V
GS
C
iss
V
= 5 V
GS
C
oss
V
= 10 V
GS
4
C
rss
0
0
0
5
10
15
20
25
0
200
400
600
800
1000
I
D
– Drain Current (mA)
V
DS
– Drain-to-Source Voltage (V)
Gate Charge
On-Resistance vs. Junction Temperature
15
12
9
1.8
1.5
1.2
0.9
0.6
0.3
0.0
I
D
= 500 mA
V
= 30 V
DS
V
= 10 V @ 500 mA
GS
V
= 48 V
DS
V
= 4.5 V @ 25 mA
GS
6
3
0
0.0
0.3
0.6
0.9
1.2
1.5
1.8
–50 –25
0
J
25
50
75
100 125 150
Q
g
– Total Gate Charge (nC)
T
– Junction Temperature (_C)
Document Number: 71410
S-21120—Rev. C, 01-Jul-02
www.vishay.com
3
Si1021R
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-Source Voltage
10
8
1000
V
= 0 V
GS
I
D
= 500 mA
100
6
T
J
= 125_C
4
I
D
= 200 mA
10
1
T
= 25_C
J
2
T
= –55_C
J
0
0
2
4
6
8
10
0.00
0.3
0.6
0.9
1.2
1.5
V
– Source-to-Drain Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
SD
Threshold Voltage Variance Over Temperature
Single Pulse Power, Junction-to-Ambient
0.5
3
0.4
2.5
I
D
= 250 ꢁA
0.3
2
0.2
1.5
0.1
–0.0
–0.1
–0.2
–0.3
1
0.5
0
T
A
= 25_C
–50 –25
0
25
50
75
100 125 150
0.01
0.1
1
10
100
600
T
J
– Junction Temperature (_C)
Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
0.1
Notes:
P
DM
0.1
0.05
0.02
t
1
t
2
t
t
1
2
1. Duty Cycle, D =
2. Per Unit Base = R
= 500_C/W
thJA
(t)
Z
3. T – T = P
DM thJA
JM
A
Single Pulse
4. Surface Mounted
0.01
–4
–3
–2
–1
10
10
10
10
1
10
100
600
Square Wave Pulse Duration (sec)
Document Number: 71410
S-21120—Rev. C, 01-Jul-02
www.vishay.com
4
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